• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.194-194
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• 2011

The effects of argon neutral beam (NB) energy on the amorphous carbon (a-C) films were investigated, while the a-C films were deposited by neutral particle beam assisted sputtering (NBAS) system. The energy of neutral particle beam can be controlled by reflector bias voltage directly as a unique operating parameter in this system. The deposition characteristics of the films investigated of Raman spectra, UV-visible spectroscopy, electrical conductivity, stress measurement system, and ellipsometer indicate the properties of amorphous carbon films can be manipulated by only NB energy (or reflector bias voltage) without changing any other process parameters. We report the effect of reflector bias voltage in the range from 0 to -1KV. By the increase of the reflector bias voltage, the amount of cross-linked sp2 clusters as well as the sp3 bonding in the a-C film coated by the NBAS system can be increased effectively and the composition of carbon thin films can be changed from nano-crystalline graphite phase to amorphous carbon phase.

• Journal of the Korean Chemical Society
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• v.33 no.5
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• pp.538-544
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• 1989

The increase of B-type hydrogen bonding character between the hydrogen atom($H{\gamma}$) of methylene group in 1-(phenoxymethyl)benzotriazole (1) and 1-(thiophenoxymetyl)benzotriazole (2) derivatives, and solvents was caused by some factors such as;electron withdrawing strength (${\rho} > 0$) of X-substituent; local diamagnetic effect by Y atom (Y = O(1) > S(2)) with adjacent methylene group; and solvent polarity parameter ($E_T$ = Kcal/mol; acetone; 42.2 > chloroform; 39.0). From the basis on the findings, linear free energy relationship (LFER) components on the substituent chemical shift of methylene group ($CH_2-SCS$) in (1) exhibited a tendency that resonance(R)-effect was much larger than field(F) (or inductive(I))-effect in acetone and that the electrical effects were depend upon the solvent.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.473-473
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• 2011

In recent years, organic thin film transistors OTFTs based on conductive-conjugated molecules have received significant attention. We report a fabrication of organic single crystal nanowires that made on Si substrates by liquid bridge-mediated nanotransfer molding (LB-nTM) with polyurethane acrylate (PUA) mold. LB-nTM is based on the direct transfer of various materials from a stamp to a substrate via a liquid bridge between them. In liquid bridge-transfer process, the liquid layer serves as an adhesion layer to provide good conformal contact and form covalent bonding between the organic single crystal nanowire and the Si substrate. Pentacene is the most promising organic semiconductors. However pentacene has insolubility in organic solvents so pentacene OTFTs can be achieved with vacuum evaporation system. However 6, 13-bis (triisopropylsilylethynyl) (TIPS) pentacene has high solubility in organic solvent that reported by Anthony et al. Furthermore, the substituted rings in TIPS-pentacene interrupt the herringbone packing, which leads to cofacial ${\pi}-{\pi}$ stacking. The patterned TIPS-Pentacene single crystal nanowires have been investigated by Atomic force microscopy (AFM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and electrical properties.

• Current Photovoltaic Research
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• v.5 no.4
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• pp.113-121
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• 2017

The researches on the silicon-based thin films are being actively carried out. The silicon-based thin films can be made as amorphous, microcrystalline and mixed phase and it is known that the optical bandgap can be controlled accordingly. They are suitable materials for the fabrication of single junction, tandem and triple junction solar cells. It can be used as a doping layer through the bonding of boron and phosphorus. The carbon and oxygen can bond with silicon to form a wide range of optical gap. Also, The optical gap of hydrogenated amorphous silicon germanium can be lower than that of silicon. By controlling the optical gaps, it is possible to fabricate multi-junction thin film silicon solar cells with high efficiencies which can be promising photovoltaic devices.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.3
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• pp.31-36
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• 2001

Dielectric material which is suitably designed for the application of the high-temperature electrostatic chucks(HTESCS) has been developed. Electrical resistivities and dielectric constants of the dielectric layer satisfy the demands for the proper operation of HTESC, and coefficient of thermal expansion(CTE) of the dielectric material matches well that of the bottom insulator so that it secures stable structure. In order to minimize particle contaminations, borosilicate glass(BSG) is selected as a bonding layer between dielectric layer and bottom insulator, and silver is used as a electrode. BSG is solidly bonded between upper dielectric and bottom insulator, and no diffusions or reactions are observed among silver electrode, dielectric, and glass layers. The chucking characteristics of the fabricated HTESC are found to be superior to those of the commercialized one.

• Bulletin of the Korean Chemical Society
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• v.32 no.1
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• pp.196-200
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• 2011

In this work, poly(methyl methacrylate) (PMMA) was grafted onto amine treated graphite nanosheets ($NH_2$-GNs) and the surface characteristics and physical properties of the $NH_2$-GNs-g-PMMA films were investigated. The graft reaction of $NH_2$-GNs and PMMA was confirmed from the shift of the $N_{1S}$ peak, including amine oxygen and amide oxygen, by X-ray photoelectron spectroscopy (XPS). The surface characteristics of the $NH_2$-GNs-g-PMMA films were measured as a function of the $NH_2$-GN content using the contact angle method. It was revealed that the specific component of the surface free energy (${\gamma}s$) of the films was slightly increased as the $NH_2$-GN content increased. Also, the thermal and mechanical properties of the $NH_2$-GNs-g-PMMA films were enhanced with the addition of $NH_2$-GNs. This can be attributed to the chemical bonding caused by the graft reaction between the $NH_2$-GNs and the PMMA matrix.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.1-4
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• 2000

Thin films of hydrogenated amorphous silicon carbide compounds ($a-Si_{x}C_{1-x}:H$) of different compositions were deposited on Si substrate by RF plasma-enhanced chemical vapor deposition (PECVD). Experiments were carried out using silane (SiH$_4$) and methane ($CH_4$) as the gas precursors at 1 Torr and at a low substrate temperature ($250^{\circ}C$). The gas flow rate was changed with the other parameters (pressure, temperature, RF power) fixed. The substrate was Si(100) wafer and all of the films obtained were amorphous. The bonding structure of $a-Si_{x}C_{1-x}:H$films deposited was investigated by X-ray photoelectron spectroscopy (XPS) for the film compositions. In addition, the surface morphology of films was investigated by atomic force microscopy (AFM).

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1763-1765
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• 2000

This paper presents deposition and characterizations of microcrystalline silicon ($\mu$ c-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature at 300$^{\circ}C$. The flow rates of $SiH_4$ gas are critical parameter for the formation of Si films with microcrystalline phase. We could obtain $\mu$ c-Si:H with columnar grain structure and volume fraction of 75% without H2 dilution. The electronic properties, hydrogen bonding configurations, and $H_2$ concentration inside the films are also strongly affected by $SiH_4$ flow rate, which is provided in this paper.

• Proceedings of the KIEE Conference
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• summer
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• pp.1367-1369
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• 2004

When an underground pipeline runs parallel with subway DC electrification system, it suffers from stray current corrosion caused by the stray current from the rails negative returns. Perforation due to the stray current corrosion may bring about disastrous accidents such even in cathodically protected systems. Traditionally, bonding methods such as direct drainage, polarized drainage and forced drainage have been used in order to mitigate the damage on pipelines. In particular, the forced drainage method is widely adopted in Busan. In this paper, we report the real-time measurement data of the pipe-to-soil potential variation in the presence and absence of the IR compensation. The drainage current variation was also measured using the Stray Current Logger developed. By analyzing them, the problems of current countermeasures for stray current corrosion are discussed.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.563-569
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• 1996

Degradation of $Zn_3N_2$ films is studied by using several analytical techniques. Polycrystalline $Zn_3N_2$ films prepared by reactie rf magnetron sputtering are kept in the air. Electrical and optical properties are measured by using van der Pauw technique and double-beam spectrometry. Structure and chemical bonding states are studied by X-ray diffraction(XRD), Fourier transfer infrared ray spectroscopy(FT-IR) and X-ray photoelectron specroscopy (XPS). Significant differences are observed in optical properties between the degraded film and the ZnO film. XRD analysis reveals that the degraded film contains very small ZnO grains because very weak and broad ZnO peaks are observed. XPS and FT-IR measurements reveal the formation of $Zn(OH)_2$ in the degraded film. The existence of N-H bonds in degraded films is exhibited from the N 1s spectra. $Zn_3N_2$ change into the mixture of ZnO, $Zn(OH)_2$ and an ammonium salt.