• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.6
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• pp.468-471
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• 2013

In this paper, we analyzed the effects of the number of TIPS-pentacene droplets and also the substrate temperature on the performance of OTFTs. As the number of the droplets increased, the mobility increased and reached the peak value and then reduced at the all temperatures. The peak mobility was $0.14{\pm}0.03cm^2/V{\cdot}sec$ at 3 droplets and $41^{\circ}C$, $0.19{\pm}0.02cm^2/V{\cdot}sec$ at 4 droplets and $46^{\circ}C$, and $0.35{\pm}0.10cm^2/V{\cdot}sec$ at 7 droplets and $51^{\circ}C$. The reason of existence of peak mobility can be found in matching the evaporation of solvent with the velocity of crystal formation. When two parameters were properly matched, the mobility produced the highest.

• Journal of Electrical Engineering and Technology
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• v.9 no.2
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• pp.635-642
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• 2014

The space charge behaviors of oil-paper insulation affect the stability and security of oil-filled converter transformers of traditional and new energies. This paper presents the results of the electrical aging of oil-impregnated paper under AC-DC combined voltages by the pulsed electro-acoustic technique. Data mining and feature extractions were performed on the influence of electrical aging on charge dynamics based on the experiment results in the first stage. Characteristic parameters such as total charge injection and apparent charge mobility were calculated. The influences of electrical aging on the trap energy distribution of an oil-paper insulation system were analyzed and discussed. Longer electrical aging time would increase the depth and energy density of charge trap, which decelerates the apparent charge mobility and increases the probability of hot electron formation. This mechanism would accelerate damage to the cellulose and the formation of discharge channels, enhance the acceleration of the electric field distortion, and shorten insulation lifetime under AC-DC combined voltages.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.282-283
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• 2006

The transport phenomena of arsenic (As) doped amorphous selenium(a-Se:As) thin film for digital X-ray conversion material has been reported. The effect of As addition on the carrier mobility and recombination lifetime in a-Se:As sample has been measured using the moving photo-carrier grating (MPG) technique. An Increase in hole mobility and recombination was observed when 0.3% arsenic, was added into a-Se sample, whereas electron mobility decrease with arsenic addition due to the defect density. The fabricated a-Se:03% As device exhibited the highest X-ray sensitivity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.695-698
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• 2008

We investigated the characteristics of Strained-Si-on-Insulator (sSOI) MOSFETs with 0.7% tensile strain. The sSOI MOSFETs have superior subthreshold swing under 70 mV/dec and output current. Especially, the electron and hole were increased in sSOI MOSFET. The electron and hole mobility in sSOI MOSFET were 286$cm^2/Vs$ and 151$cm^2/Vs$, respectively. The carrier mobility enhancement is due to the subband splitting by 0.7% tensile strain.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.378-381
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• 2001

The electron drift mobility of poly(4,4'-cyclohexylidenediphenyl carbonate) (PC-Z) doped with 3,5-dimethy-3,5-di-t-butylstilbenequinone(MBSQ), 3,5,3,5-tetra-t-butyl stilbenequinone(TBSQ) and 3,5,3,5-tetra-methyl stilbenequinone(TMSQ) was measured by the time-of-flight technique. The electric field and temperature dependences of the electron drift mobility were discussed with Poole-Frenkel, Arrhenius formulations and non-Arrhenius type of temperature dependence. It was assumed that the hopping sites were Gaussian distribution. Mobility and activation energy of MBSQ were increased with increasing dopant. However, mobilities and activation energy of TBSQ and TMSQ were increased and decreased, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.47-48
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• 2005

The moving photocarrier grating(MPG) technique for the determination of the carrier mobilities and the recombination lifetime in a-Se:As films have been studied. The electron and hole drift mobility and the recombination lifetime of a-Se films with arsenic (As) additions have been obtained. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film. However, the electron mobility exhibits no observable change up to 0.5% As addition in a-Se films.0.3% As added a-Se film also exhibits the maximum short circuit current densities per laser intensity of $5.29\times10^{-7}$ A/W.

• Journal of information and communication convergence engineering
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• v.5 no.3
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• pp.209-214
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• 2007

In this paper, we proposed a new MANET (Mobile Ad hoc Networks) technology of routing protocol. The MANET has a mobility formation of mobile nodes in the wireless networks. Wireless network have two types architecture: the Tree based multicast and shared tree based. The two kind's architecture of general wireless networks have difficult to solve the problems existing in the network, such as connectivity, safety, and reliability. For this purpose, as using that ADDMRP (Ad hoc network Doppler effect-based for Dynamic Multicast Routing Protocol), this study gives the following suggestion for new topology through network durability and Omni-directional information. The proposed architectures have considered the mobility location, mobility time, density, velocity and simultaneous using node by Doppler effects and improved the performance.

• Electrical & Electronic Materials
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• v.10 no.6
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• pp.581-588
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• 1997

The ionization energy and degree of ionization for Si and Ge with boron doping are calculated. The hole mobilities are then calculated as a function of doping concentration using the relaxation time approximation. When the screening effect is taken into account, the reduction of ionization energy results in the increase of degree of ionization. As a result, the calculated Si mobility becomes closer to the experimental data, whereas the calculated Ge mobility is almost independent of the screening effect. The inclusion of the broadening effect in the mobility calculation overestimates the ionized impurity scattering. As compared with the experiment, the screening effect is not avoidable to calculate Si and Ge mobilities, and the broadening effect must accompany with the hopping process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.378-381
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• 2001

The electron drift mobility of poly(4,4'-cyclohexylidenediphenyl carbonate)(PC-Z) doped with 3,5-dimethy-3,5-di-t-butylstilbenequinone(MBSQ), 3,5,3,5-tetra-t-butyl stilbenequinone(TMSQ) and 3,5,3,5-tetra-methyl stilbenequinone(TMSQ) was measured by the time-of-flight technique. The electric field and temperature dependences of the electron drift mobility were discussed with Poole-Frenkel, Arrhenius formulations and non-Arrhenius type of temperature dependence. It was assumed that the hopping sites were Gaussian distribution. Mobility and activation energy of MBSQ were increased with increasing dopant. However, mobilities and activation energy of TBSQ and TMSQ were increased and decreased, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.04a
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• pp.85-88
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• 2006

The transport properties of amorphous selenium typical of the material used in direct conversion x-ray imaging devices are reported. The effects of As addition on the carrier mobility and recombination lifetime in amorphous selenium (a-Se) films have been studied using the moving photocarrier grating (MPG) technique. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with the drift mobilities of holes and electrons obtained by time of flight (TOF) measurement.