• Proceedings of the Korea Information Processing Society Conference
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• 2008.05a
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• pp.875-878
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• 2008

Proxy MIPv6 환경에서 Local Mobility Anchor는 이동 단말에 대해 이동성을 제공하기 위한 등록과정과 데이터의 터널링을 제공한다. 다수의 Mobile Access Gateway에 위치하는 모든 이동 단말에 대해 서비스를 제공하여야 하기 때문에 Local Mobility Anchor는 병목현상을 일으킬 수 있으며 이것은 Local Mobility Anchor에 의해 관리되는 모든 이동 단말에 대해 전체적인 이동 서비스의 실패로 이어질 수 있다. 본 논문에서는 이러한 문제를 해결하기 위해 다수의 Local Mobility Anchor에 부하를 분배하며 특정한 Local Mobility Anchor에 부하가 집중될 경우 효과적으로 재분배하기 위한 기법을 소개한다. 본 논문에서 제안하는 기법을 통해 다수의 이동 단말에게 서비스를 제공하는 Proxy MIPv6 환경에서도 안정적이고 양질의 서비스를 제공하며 자원을 효율적으로 이용할 수 있을 것으로 기대된다.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.9 no.6
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• pp.2180-2200
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• 2015

This paper considers mobility control to improve packet delivery in delay-tolerant networks (DTNs) under group mobility. Based on the group structure in group mobility, we propose two mobility control techniques; group formation enforcement and group purposeful movement. Both techniques can be used to increase the contact opportunities between groups by extending the group's reachability. In addition, they can be easily integrated into some existing DTN routing schemes under group mobility to effectively expedite the packet delivery. This paper is divided into 2 parts. First, we study how our proposed mobility control schemes reduce the packet delivery delay in DTNs by integrating them into one simple routing scheme called group-epidemic routing (G-ER). For each scheme, we analytically derive the cumulative density function of the packet delivery delay to show how it can effectively reduce the packet delivery delay. Then, based on our second proposed technique, the group purposeful movement, we design a new DTN routing scheme, called purposeful movement assisted routing (PMAR), to further reduce the packet delay. Extensive simulations in NS2 have been conducted to show the significant improvement of PMAR over G-ER under different practical network conditions.

• Proceedings of the KIEE Conference
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• 2004.11c
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• pp.209-211
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• 2004

We can categorize mobility two main fields in IP environment. If Mobile IP manages macro mobility, Cellular IP deal with micro mobility. For seamless connection, it is major problem to reduce packet loss in the network layer during handoff. This paper will introduce a scheme which reduces packet loss during micro mobility which use indirect handoff mechanism in Cellular IP, and will verify the efficiency of that scheme by computer simulation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.423-427
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• 1998

In this paper the electron mobility in $Ga{1-X}In_xAs$alloy semiconductors is simulated by using the ensemble Monte Carlo method. The simulations for Ga\ulcornerIn\ulcornerAs with In mole fraction, doping concentration and temperature as parameters are performed. The electron mobility for alloys which perfectly orderd alloys without the alloy scattering mechanism are assumed, the results show that mobility in Ga\ulcornerIn\ulcornerAs is improved by 11%, 12% and 7% for 0.25, 0.53 and 0.75. In mole fractions, respectively, We reported the theoretical results of electron mobility in $Ga{1-X}In_xAs$alloys, so those will contribute to the research and development into materials for high-speed semiconductor devices.

• Journal of Ubiquitous Convergence Technology
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• v.1 no.1
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• pp.53-59
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• 2007

This paper proposes a new group mobility model for wireless communication. The mobility model considers the psychological and sociological behavior of each node and the perception of other nodes for describing interactions among a set of nodes. The model assumes no permanent membership of a group, capable of capturing natural behaviors as fork and join. It emulates a cooperative movement pattern observed in mobile ad hoc networks of military operation and campus, in which a set of mobile stations accomplish a cooperative motion affected by the individual behavior as well as a group behavior. The model also employs a physic model to avoid a sudden stopping and a sharping turning.

• Journal of IKEEE
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• v.16 no.2
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• pp.81-85
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• 2012

In this paper, we analyze the effect of mobility management method to the data rate of moving users when pico-cell which uses the same frequency bandwidth as that of macro-cell is overlaid over macro-cell. From this analysis, we show that the data rate which is available to the moving user depends on the method of mobility management and relative location of the overlaid pico-cell over macro-cell in the network.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.113-114
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• 2007

Hole mobility characteristics of single surface channel and dual channel Si/SiGe structure are compared, where the former one consists of a relaxed SiGe buffer layer and a tensile strained Si layer on top, and for dual channel structure a compressively strained SiGe layer is inserted between them. Due to the difference of hole mobility enhancement factors of layers between them, hole mobility characteristics with respect to the Si cap thickness shows the opposite tend. Hole mobility increases with thicker Si cap for single channel structure, whereas it decreases with thicker Si cap for dual channel structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.6
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• pp.350-355
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• 2014

Bottom-gate tin oxide ($SnO_2$) thin film transistors (TFTs) were fabricated on $N^+$ Si wafers used as gate electrodes. 60-nm-thick $SnO_2$ thin films acting as active layers were sputtered on $SiO_2/Al_2O_3$ films. The $SiO_2/Al_2O_3$ films deposited on the Si wafers were employed for gate dielectrics. In order to increase the resistivity of the $SnO_2$ thin films, oxygen mixed with argon was introduced into the chamber during the sputtering. The mobility of $SnO_2$ TFTs was measured as a function of the flow ratio of oxygen to argon ($O_2/Ar$). The mobility variation with $O_2/Ar$ was analyzed through studies on crystallinity, oxygen binding state, optical properties. X-ray diffraction (XRD) and XPS (X-ray photoelectron spectroscopy) were carried out to observe the crystallinity and oxygen binding state of $SnO_2$ films. The mobility decreased with increasing $O_2/Ar$. It was found that the decrease of the mobility is mainly due to the decrease in the polarizability of $SnO_2$ films.

• Journal of the Korean Institute of Telematics and Electronics
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• v.15 no.2
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• pp.19-21
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• 1978

The electrical drift mobility of charge carrier of Cholesteryl Benzoate was measured by Polarity inversion method in the temperature range 140~ 185$^{\circ}C$. with a view to revealing the mechanism of charge carrier transport. The electrical drift mobility of charge carrier of that increased from 2.5$\times$10-7$\textrm{cm}^2$/V.sec to 2.0$\times$10-6$\textrm{cm}^2$/v.sec as the temperature increased. As a result of the experiment, the mechanism of current transport is believed to be ionic mechanism.

• Transactions on Electrical and Electronic Materials
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• v.18 no.6
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• pp.323-329
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• 2017

This reports the electrical behavior, bonding structure and Schottky contact of gallium-zinc-oxide (GZO) thin film annealed at $100{\sim}400^{\circ}C$. The mobility of GZO with high density of PL spectra and crystal structure was also increased because of the structural matching between GZO and Si substrate of a crystal structure. However, the GZO annealed at $200^{\circ}C$ with an amorphous structure had the highest mobility as a result of a band to band tunneling effect. The mobility of GZO treated at low annealing temperatures under $200^{\circ}C$ increased at the GZO with an amorphous structure, but that at high temperatures over $200^{\circ}C$ also increased when it was the GZO of a crystal structure. The mobility of GZO with a Schottky barrier (SB) was mostly increased because of the effect of surface currents as well as the additional internal potential difference.