• Bulletin of the Korean Chemical Society
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• v.11 no.5
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• pp.371-376
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• 1990

Polyaniline perchlorate (PAP) was synthesized by the chemical oxidation of aniline using ferric perchlorate as a strong oxidant. The electrical conductivity of PAP was measured at temperatures from - 170 to 25$^{\circ}C$. It is suggested from the conductivity measurements that the conduction mechanism for PAP is a polaron hopping conduction. From the dependence of resistivity on the reciprocal temperature, the activation energy was computed to be 0.072 eV. From the comparison of the ESR parameterks and conductivity at 25$^{\circ}C$ for the polyaniline-based conducting polymers, the conductivities of PAP, PATFB and PATS increase with increasing ${\Delta}H_{pp}$, decreasing A/B ratio and decreasing g-value, respectively. It is shown by TGA results for PAP, PATFB and PATS that the maximum weight loss rates (Pr) are 0.185 (at 269$^{\circ}C$ ), 0.366 (at 324$^{\circ}C$) and 0.23 mg/min (at 338$^{\circ}C$), respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.307-308
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• 2007

This work shows the experimental results obtained from ageing at a temperature of 100 C for 48, 70 and 312 h, although the application of AC electrical tension in samples and the measuring of current leakage are presented. The measurements in samples were carried out with samples prepared from the deformulated commercial materials and respectively reformulated into thin films. The obtained results showed the mechanisms of conduction of samples in low and high electric fields. It was also identified an electric tension transition showing that in low fields it prevails the Ohm's law conduction, and in high electric fields it prevails the conduction of space charge limited current (SCLC). These results can support the natural rubber formulation process having as their main objective the reducing of the mechanisms that occur under high conduction current in high electric fields, which leads the material to a dielectric breakdown. Raw Natural rubber in Brazil is extracted from rubber trees (Hevea brasiliensis) in farms in So Paulo State by using some new plantation technology in smaller spaces, with trees placed a few meters from each other. In the Amazon rain forest the rubber trees are found naturally and their spacing may be of hundreds of meters or even kilometers between them. It is necessary to research this raw material from different internationally standard clones to characterize dielectric and electric properties for industrial applications. Moreover, this natural material has a low commercial price when compared to the synthetic ones.

• Korean Journal of Materials Research
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• v.26 no.1
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• pp.35-41
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• 2016

The electrical transport properties of $La_{0.5}Sr_{0.5}CrO_3$ below room temperatures were investigated by dielectric, dc resistivity, magnetic properties and thermoelectric power. Below $T_c$, $La_{0.5}Sr_{0.5}CrO_3$ contains a dielectric relaxation process in the tangent loss and electric modulus. The $La_{0.5}Sr_{0.5}CrO_3$ involves the transition from high temperature thermal activated conduction process to low temperature one. The transition temperature corresponds well to the Curie point. The relaxation mechanism has been discussed in the frame of electric modulus spectra. The scaling behavior of the modulus suggests that the relaxation mechanism describes the same mechanism at various temperatures. The low temperature conduction and relaxation takes place in the ferromagnetic phase. The ferromagnetic state in $La_{0.5}Sr_{0.5}CrO_3$ indicates that the electron - magnon interaction occurs, and drives the carriers towards localization in tandem with the electron - lattice interaction even at temperature above the Curie temperature.

• Electrical & Electronic Materials
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• v.11 no.10
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• pp.60-65
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• 1998

Deposition conditions, surface morphology, and electrical properties of polyamic acid alkylamine salts (PAAS) Langmuir-Blodgett(LB) films have been investigated through a study of surface pressure-area $\pi$-A isotherms, AFM (atomic force microscopy), and current-voltage characteristics. To obtain the optimum conditions of film deposition, the $\pi$-A isotherms were examined by varying temperature, barrier moving speed, dipping speed, spreading amount of solution etc. The Z-type LB films were made at the surface pressure of 5 mN m-1 and 25 mN m-1 for the AFM study; the former surface pressure forms the gas phase and the latter one forms the solid phase. The LB film made in the gas phase show domains with a size of about 200 A diameter and 70 A height. However, the LB films made in the solid phase show a very smooth surface with 2 A surface roughness. In the current-voltage characteristics measured along the perpendicular direction of the films, ohmic conduction has been observed below 105 V cm-1 and the calculated electrical conductivity is about 10-13 S cm-1. Nonohmic conduction has been observed above = 10-11 V cm and the conduction mechanism can be explained by the Schottky effect.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.61.1-61
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• 2003

Stoichiometric, uniform, amorphous ZrO$_2$ films with an equivalent oxide thickness of ∼1.5nm and a dielectric constant of ∼18 were deposited by an atomic layer controlled deposition process on silicon for potential application in meta-oxide-semiconductor(MOS) devices. The conduction mechanism is identified as Schottky emission at low electric fields and as Poole-Frenkel emission at high electric fields. the MOS devices showed low leakage current, small hysteresis(〈50mV), and low interface state density(∼2*10e11/cm2eV). Microdiffraction and high-resolution transmission electron microscopy showed a localized monoclinic phase of ${\alpha}$-ZrO$_2$ and an amorphous interfacial ZrSi$\_$x/O$\_$y/ layer which has a correspondign dielectric constant of 11

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1088-1091
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• 2001

Temperature-dependent current-voltage characteristics of Organic Light-Emitting Diodes(OLEDs) were studied. The OLEDs were based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1, 1'-diphenyl-4, 4'-diamine (TPD) as a hole transport and trim(8-hydroxyquinoline) alulninum(Alq$_3$) as an electron transport and emissive material. The current-voltage characteristics were measured in the temperature range of 10[K] and 300[K]. A conduction mechanism in OLEDs was interpreted in terms of tunneling and trap-filled limited current.

• Journal of the Korean Ceramic Society
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• v.18 no.1
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• pp.23-26
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• 1981

The electrical conductivity of highly pure polycrystalline $Yb_2O_3$ has been measured from 650 to 105$0^{\circ}C$ under oxygen pressure range of $10^{-5}$ to 102 torr. The conductivity dependence of oxygen pressure in the temperature region from 750 to 105$0^{\circ}C$ is approximated by $\sigma$ $\alpha$ $Po_2^{1/5.3}$. This shows that the conduction mechanism is associated with doubly ionized metal vacancies. Fairly low activation energy and the lack of oxygen pressure dependence are found over the temperature range of 650 to 75$0^{\circ}C$. The conduction mechanism can be explaned by not metal vacancies, but hopping oxygen ions in the oxide.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.370-373
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• 2001

Temperature-dependent current-voltage characteristics of Organic Light-Emitting Diodes(OLEDs) were studied. The OLEDs were based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD) as a hole transport and tris(8-hydroxyquinoline) aluminum($Alq_3$) as an electron transport and emissive material. The current-voltage characteristics were measured in the temperature range of 10[K] and 300[K]. A conduction mechanism in OLEDs was interpreted in terms of tunneling and trap-filled limited current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.370-373
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• 2001

Temperature-dependent current-voltage characteristics of Organic Light-Emitting Diodes (OLEDs) were studied. The OLEDs were based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD) as a hole transport and trois(8-hydroxyquinoline) aluminum(Alq$_3$) as an electron transport and emissive material. The current-voltage characteristics were measured in the temperature range of 10[K] and 300[K]. A conduction mechanism in OLEDs was interpreted in terms of tunneling and trap-filled limited current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.93-93
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• 2007

We present a mechanism for stress-induced interface degrdadations through ab initio pseudopotential calculations. We find that N interstitials at the interface create various defects levels in the Si band gap, which range from the mid gap to the conduction band of Si. The level positions are dependent on the configuration of oxygen toms around the N interstitial. On the other hand, the mid-gap level caused by Pb center is possibly removed by substitution of a N atom for a threefold-coordinated Si atom in the defect. Our calculations explain why interface state generations are enhanced in Si oxynitride, especially near conduction band edge of Si, although densities of Pb center are reduced.