• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.4 s.119
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• pp.364-371
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• 2007

In this paper, the design and implementation of high-power PIN diode switch modules and high-speed switch driver circuits are presented for Wibro base stations. To prevent isolation degradation due to parasitic inductances of conventional packaged PIN diodes and to improve power handling capabilities of the switch modules, bare diode chips are used and carefully placed in a PCB layout, which makes bonding wire inductances to be absorbed in the impedance of a transmission line. The switch module is designed and implemented to have a maximum performance while using a minimum number of the diodes. It shows an insertion loss of ${\sim}0.84\;dB$ and isolation of 80 dB or more at 2.35 GHz. The switch driver circuit is also fabricated and measured to have a switching speed of ${\sim}200\;nsec$. The power handling capability test demonstrates that the module operates normally even under a digitally modulated 70 W RF signal stress.

• Korean Journal of Materials Research
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• v.28 no.4
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• pp.241-246
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• 2018

$TaN_x$ film is grown by plasma enhanced atomic layer deposition (PEALD) using t-butylimido tris(dimethylamido) tantalum as a metalorganic source with various reactive gas species, such as $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. Although the pulse sequence and duration are the same, aspects of the film growth rate, microstructure, crystallinity, and electrical resistivity are quite different according to the reactive gas. Crystallized and relatively conductive film with a higher growth rate is acquired using $NH_3$ as a reactive gas while amorphous and resistive film with a lower growth rate is achieved using $N_2+H_2$ mixed gas. To examine the relationship between the chemical properties and resistivity of the film, X-ray photoelectron spectroscopy (XPS) is conducted on the ALD-grown $TaN_x$ film with $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. For a comparison, reactive sputter-grown $TaN_x$ film with $N_2$ is also studied. The results reveal that ALD-grown $TaN_x$ films with $NH_3$ and $H_2$ include a metallic Ta-N bond, which results in the film's higher conductivity. Meanwhile, ALD-grown $TaN_x$ film with a $N_2+H_2$ mixed gas or sputtergrown $TaN_x$ film with $N_2$ gas mainly contains a semiconducting $Ta_3N_5$ bond. Such a different portion of Ta-N and $Ta_3N_5$ bond determins the resistivity of the film. Reaction mechanisms are considered by means of the chemistry of the Ta precursor and reactive gas species.

• The Korean Journal of Ceramics
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• v.5 no.4
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• pp.336-340
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• 1999

Glasses in the system $CaO-TiO_2-SiO_2-Al_2O_3-ZrO_2-B_2O_3$ were investigated to find the glass seal compositions suitable for use in the planar solid oxide fuel cell (SOFC). Glass-ceramics prepared from the glasses by one-stage heat treatment at $1,000^{\circ}C$ showed various thermal expansion coefficients (i,e., $8.6\times10^{-6^{\circ}}C^{-1}$ to $42.7\times10^{-6^{\circ}}C^{-1}$ in the range 25-$1,000^{\circ}C$) due to the viscoelastic response of glass phase. The average values of contact angles between the zirconia substrate and the glass particles heated at 1,000-$1,200^{\circ}C$ were in the range of $131^{\circ}\pm4^{\circ}$~$137^{\circ}\pm9^{\circ}$, indicating that the glass-ceramic was in partial non-wetting condition with the zirconia substrate. With increasing heat treatment time of glass samples from 0.5 to 24 h at $1,100^{\circ}C$, the DC electrical conductivity of the resultant glass-ceramics decreased from at $800^{\circ}C$. Isothermal hold of the glass sample at $1100^{\circ}C$ for 48h resulted in diffusion of Ca, Si, and Al ions from glass phase into the zirconia substrate through the glass/zirconia bonding interface. Glass phase and diffusion of the moving ion such as $Ca^{2+}$ in glass phase is responsible for the electrical conduction in the glass-ceramics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.9
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• pp.669-676
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• 2013

In this study, we introduce a polymer(polyimide) based pressure sensor to measure real-time heart beat and blood pressure. The sensor have been designed with consideration of skin compatibility of material, cost effectiveness, manufacturability and wireless detection. The designed sensor was composed of inductor coils and an air-gap capacitor which generate self-resonant frequency when electrical source is applied on the system. The sensor was obtained with metalization, etching, photolithography, polymer adhesive bonding and laser cutting. The fabricated sensor was shaped in circular type with 10mm diameter and 0.45 mm thickness to fit radial artery. Resonant frequencies of the fabricated sensors were in the range of 91~96 MHz on 760 mmHg pressurized environment. Also the sensor has good linearity without any pressure-frequency hysteresis. Sensitivity of the sensor was 145.5 kHz/mmHg and accuracy was less than 2 mmHg. Real-time heart beat measurement was executed with a developed hand-held measurement system. Possibility of real-time blood pressure measurement was showed with simulated artery system. After installation of the sensor on skin above radial artery, simple real blood pressure measurement was performed with 64 mmHg blood pressure variation.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.4
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• pp.47-52
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• 2013

Gold wire has long been used as a proven method of connecting a silicon die to a substrate in wide variety of package types, delivering high yield and productivity. However, with the high price of gold, the semiconductor packaging industry has been implementing an alternate wire material. These materials may include silver (Ag) or copper (Cu) alloys as an alternative to save material cost and maintain electrical performance. This paper will analyze and compare the electrical characteristics of several wire types. For the study, typical 0.6 mil, 0.8 mil and 1.0 mil diameter wires were selected from various alloy types (2N gold, Palladium (Pd) coated/doped copper, 88% and 96% silver) as well as respective pure metallic wires for comparison. Each wire model was validated by comparing it to electromagnetic simulation results and measurement data. Measurements from the implemented test boards were done using a vector network analyzer (VNA) and probe station setup. The test board layout consisted of three parts: 1. Analysis of the diameter, length and material characteristic of each wire; 2. Comparison between a microstrip line and the wire to microstrip line transition; and 3. Analysis of the wire's cross-talk. These areas will be discussed in detail along with all the extracted results from each type the wire.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.6
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• pp.72-78
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• 1998

An optical modulator Ti:LiNbO$_3$optical waveguide and CPW electrode structure were fabricated. The optical modulator was packaged using components such as ferrules, dirmy LN block and glass, vibration and shock absorbption pad, and alumina feeder through processings of pigtailing. Au wire bonding, epoxing, SMA connecting, sealing. The electrical and optical characteristics were measured after packaging. The electrical properties of S$_{21}$ and S$_{11}$ were obtained as 9.8 GHz at -3 dB and -8.9dB at 14.4GHz, respectively. Optical waveguide prepared met requirements for a single mode at a 1550nm wavelength range. Insertion loss was 4.3dB at room temperature after packaging, and was varied 4.3~6.4dB at various temperatures, 5~45$^{\circ}C$. E-O bandwidth measurement showed 3dB optical response at 7.8GHz, which means that it is applicable for 10Gbps optical communicationon

• Journal of Sensor Science and Technology
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• v.16 no.6
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• pp.457-461
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• 2007

This paper describes the characteristics of poly (polycrystalline) 3C-SiC grown on $SiO_{2}$ and AlN substrates, respectively. The crystallinity and the bonding structure of poly 3C-SiC grown on each substrate were investigated according to various growth temperatures. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (full width half maximum) of XRD and FT-IR by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was $1100^{\circ}C$. The surface chemical composition and the electron mobility of poly 3C-SiC grown on each substrate were investigated by XPS and Hall Effect, respectively. The chemical compositions of surface of poly 3C-SiC films grown on $SiO_{2}$ and AlN were not different. However, their electron mobilities were $7.65{\;}cm^{2}/V.s$ and $14.8{\;}cm^{2}/V.s$, respectively. Therefore, since the electron mobility of poly 3C-SiC films grown on AlN buffer layer was two times higher than that of 3C-SiC/$SiO_{2}$, a AlN film is a suitable material, as buffer layer, for the growth of poly 3C-SiC thin films with excellent properties for M/NEMS applications.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.4
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• pp.175-183
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• 2002

In this paper, the surface modification effect of self-assembled monolayer(SAM) of 1-dodecanethiol [$CH_3$($CH_2$)$_{11}$SH] used as an anti-adhesive film in micromolding process was studied. Monolayers of 1-dodecanethiol[$CH_3$(CH$_2$)$_{11}$SH] were obtained by immersing a metal place in pure 1-dodecanethiol. SAM film on the nickel plate has been examined by using X-ray photoelectron spectroscopy(XPS). The focus has been placed on S-Ni bonding. From the XPS analysis, sulfur atoms were detected from the SAM film as a chemical composition of S-Ni. In order to measure an adhesion force of the SAM-coated nickel surface, atomic force microscopy(AFM) was used in force-distance mode, which whows the micro-adhesive force on solid surface. It was shown that adhesion forces measured from the SAM-coated nickel surface and the Ni surface without SAM coating were 3.52nN and 5.32nN, respectively. In order to investigate the effect of SAM coating on the surface foughness the replica in demolding process, hot embossing experiments were performed using a SAM-coated nickel master and a nickel master without SAM coating. Surface roughness of replica from the SAM-coated master showed 25nm and that of replica from master without SAM coating was 35nm. The smoother surface roughness of the replica from the SAM-coated, master is believed to result from reduction in the adhesion forces.ces.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.9
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• pp.449-454
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• 2002

A rectangular straight microchannel, integrated with the resistance temperature detectors(RTDs) for temperature sensing and a micro-heater for generating the Temperature gradient along the channel, was fabricated. Its dimension is 57${\mu}{\textrm}{m}$(H)$\times$200${\mu}{\textrm}{m}$(W)$\times$48,050${\mu}{\textrm}{m}$(L), and RTDs were placed at the inner-channel wall. Si wafer was used as a substrate. For the fabrication of RTDs, 5300$\AA$ thick Pt/Ti layer was sputtered on a Pyrex glass wafer. Finally, the glass wafer was bonded with Si wafer by anodic bonding, so that the RTDs are located inside the microchannel. Temperature coefficient of resistance(TCR) values of the fabricated Pt-RTDs were 2800~2950ppm$^{\circ}C$ and the variation of TCR value In the range of O~10$0^{\circ}C$ was less than 0.3％. Therefore, it was proved that the fabricated Pt-RTDs without annealing were excellent as temperature sensors. The temperature distribution in the microchannel was investigated as a function of mass flow rate and heating power. The temperature increase rate diminished with decreasing the applied power and increasing the mass flow rate. It was confirmed from the comparison with the simulation results that the temperature measured inside the microchannel is more accurate than measuring the temperature measured at the outer wall. The proposed temperature sensing method and microchannel are expected to be useful in microfluidics researches.

• Journal of Sensor Science and Technology
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• v.14 no.5
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• pp.322-330
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• 2005

A new type of transducer, piezoelectric floating mass transducer (PFMT) which has advantages of piezoelectric and electromagnetic transducer has been proposed and implemented for the implantable middle ear hearing devices. By the uneven bonding of piezoelectric material to the inner bottom of transducer case, the PFMT can vibrate back-and-forth along the longitudinal axis of the transducer even though the piezoelectric material within the cylindrical case produces only the bilateral expansion and contraction according to the applied electrical signal. To improve efficiency of the PFMT, the multi-layered piezoelectric material has been adapted. The small number of components in the PFMT enables the simple manufacturing and the easy implanting into the middle ear. In order to examine the characteristics of vibration, mechanical modeling and finite element analyses of the proposed transducer have been performed. From the result of theoretical analyses and the measured data from the experiment, it is verified that the implemented PFMT can be used in implantable middle ear hearing devices.