• Journal of Electrical Engineering and Technology
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• v.13 no.6
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• pp.2425-2433
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• 2018

This study investigates a new organic based material and its dielectric and mechanical properties. It is a comprehensive nanocomposite comprising a combination of various types of nanofillers with hydrophobic silica nanoparticles (AEROSIL R 974) as a matrix modifier and a polyamide nano nonwoven textile, Ultramid-Polyamide 6, pulped in the electrostatic field as a dielectric barrier. The polymer matrix is an epoxy network based on diglycidyl ether of bisphenol A (DGEBA) and cycloaliphatic diamine (Laromine C260). The designed nanocomposite material is an alternative to the conventional three-component composites containing fiberglass and mica with properties that exceed current electroinsulating systems (volume resistivity on the order of $10^{16}{\Omega}{\cdot}m$, dissipation factor tan ${\delta}=4.7{\cdot}10^{-3}$, dielectric strength 39 kV/mm).

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1202-1204
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• 1997

In this paper we evaluated dielectric properties and temperature dependency in PET with and without semiconductor. Dielectric losses of PET without and with semiconductor was $3.7{\times}10^{-3}$(%) and $1.8{\times}10^{-3}$(%), respectively, at room temperature. On the condition that semiconductors exist, we confirmed that dielectric properties had been influence on semiconductor's number.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.6
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• pp.543-549
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• 2005

The electrical and dielectric properties of $ZnO-Pr_6O_{11}-CoO-Cr_2O_3-based$ varistors were investigated in the sintering time range of $1\~3$ h. Increasing sintering time improved the densification of ceramics, whereas deteriorated the nonlinearity, in which the nonlinear exponent greatly decreased from 55.3 to 38.2 and the leakage current increased from 0.1 to $1.1\;{\mu}A$. The donor concentration and density of interface states increased in the range of $(1.06\~1.60)\times10^8/cm^3\;and\;(3.15\~3.67)\times10^{12}/cm^2$ with increasing sintering time, respectively. while, in dielectric properties, the increase of sintering time increased in the range of $0.0228\~0.0505$ in tans and $1.32\~1.36\;{\mu}s$ in relaxation time.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.12
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• pp.2431-2435
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• 2009

The heterolayered BT/BNT thick films were fabricated by screen printing techniques on alumina substrates electrodes with Pt. We report the improved ferroelectric and dielectric properties in the heterolayered tetragonal/rhombohedral structure composed of the BT and the BNT thick films. We investigated the effects of deposition conditions on the structural and electrical properties of the heterolayered BT/BNT thick films. The dielectric properties of the heterolayered BT/BNT thick films were superior to those of single composition BNT, and those values for the heterolayered BT/BNT thick films were 1455, 0.025 and $12.63 {\mu}C/cm^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.292-293
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• 2006

We have Investigated dielectric properties depending on bias voltage in organic lightemitting diodes using 8-hydroxyquinoline aluminum($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric properties of organic light emitting diodes using impedance characteristics measurement by the auto-balancing bridge technique and equivalent cirrcuit of ITO/$Alq_3$/Al. Impedance characteristics was measured complex impedance Z and phase ${\theta}$ in the frequency range of 40 [Hz] to $10^8$ [Hz]. We obtained complex electrical conductivity, dielectric constant, and loss tangent ($tan{\delta}$) of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.293-294
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• 2005

We have investigated dielectric properties depending on frequency in organic light -emitting diodes using 8-hydroxyquinoline aluminum ($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric properties of organic light-emitting diodes using impedance of characteristics. impedance characteristics was measured complex impedance Z and phase $\Theta$ in the frequency range of 40 Hz to $10^8$ Hz. We obtained complex electrical conductivity, dielectric constant, and loss tangent (tan$\delta$) of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.190-193
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• 2003

Sm-doped lead zirconate titanate($Pb_{1.1}(Zr_{0.6}Ti_{0.4})O_3$; PZT) thin films on the Pt(111)/Ti/$SiO_2$/Si(100) substrates prepared by a sol-gel method. The effect on structural and electrical properties of PZT thin films measured according to the Sm content. Sm-doping altered significantly dielectric and ferroelectric properties. The remanent polarization and the coercive field decreased with the increasing Sm content. The dielectric constant and the dielectric loss of PZT thin films decreased with the increasing Sm content. At 100 kHz, the dielectric constant and the dielectric loss of. the 0.3 mol% of Sm-doped PZT thin film were 1200 and 0.12 respectively. The remanent polarization (2Pr) of the 0.3 mol% of Sm-doped PZT thin film was $52.13{\mu}C/cm^2$ and the coercive field was 94.01 kV/cm. The 0.3 mol% of Sm-doped PZT thin film showed an improved fatigue characteristic comparing to the undoped PZT thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.04a
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• pp.74-75
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• 2006

We have investigated dielectric properties depending on temperature in organic light-emitting diodes using 8-hydroxyquinoline aluminum ($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric properties of organic light-emitting diodes using characteristics of impedance. he Impedance characteristics was measured complex impedance Z and phase $\theta$ in the temperature range of 10 K to 300 K. We obtained complex electrical conductivity, dielectric constant and loss tangent ($tan{\delta}$) of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1516-1519
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• 1996

In this paper, a study on the electrical properties of ternary compound ceramics $[(1-y-x)BaTiO_{3}-ySrTiO_{3}-xMgTiO_3]$ fabricated 7 samples with each mol[%] by using the mixed oxide method. In this case, the sintering temperature were at $1,250[^{\circ}C]$ for 2[hr]. Also made ceramic capacitors from 7 samples, temperature coefficient of the capacitance and the variation of relative dielectric constants and loss with fixed frequency (1KHZ) were studied. In some ceramic capacitors, has shown very good properties of the dielectric constants and loss. In case of BSM-11 ceramic capacitor, is sure to the commercial capacitor which shows steady properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.758-763
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• 2000

Dielectric strength of insulators made of epoxy composites rapidly decreases due to ageing to interfaces between the matric resin and filler particles. The adhesion variation of interfaces caused by moisture absorption also alters electrical properties that are the basic characteristics of insulators, particularly, in outdoor use. In this paper, electrical properties of epox/SiO$_2$composites were investigated at boiling absorption condition to observe the influences of moisture. In order to analyze the basic physical properties of samples, scanning electron microscopy and DC, AC and impulse voltage dielectric strength were measured. Also, the breakdown time of samples was measured under AC 6[kV] applied voltage, and the variation of lifetime was verified by using Weibull distribution function.