• Journal of Mechanical Science and Technology
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• v.18 no.3
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• pp.419-431
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• 2004

The dynamic response of a cracked functionally graded piezoelectric material (FGPM) under transient anti-plane shear mechanical and in-plane electrical loads is investigated in the present paper. It is assumed that the electroelastic material properties of the FGPM vary smoothly in the form of an exponential function along the thickness of the strip. The analysis is conducted on the basis of the unified (or natural) crack boundary condition which is related to the ellipsoidal crack parameters. By using the Laplace and Fourier transforms, the problem is reduced to the solutions of Fredholm integral equations of the second kind. Numerical results for the stress intensity factor and crack sliding displacement are presented to show the influences of the elliptic crack parameters, the electric field, FGPM gradation, crack length, and electromechanical coupling coefficient.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.959-961
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• 1999

ZnO thin films are deposited by using an RF magnetron sputtering system. Structural and electrical properties are analyzed as a function of deposition conditions, such as RF power, Ar/($Ar+O_2$) ratio, and substrate temperature. The c-axial growth of ZnO is observed to be preferable to the $SiO_2$/Si substrate, rather than the Si substrate. By adding the oxygen gas during deposition, the electrical resistivity of films is increased, but the c-axial growth is inhibited. A pizoelectric resonator of Al/ZnO/Al is also fabricated to estimate the electric-mechanical coupling coefficient($k^2$) of ZnO film. The value of $k^2$ obtained from our work is about 10.14 %.

• Advances in nano research
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• v.8 no.1
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• pp.83-94
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• 2020

An analytical formulation and solution process for the buckling analysis of porous magneto-electro-elastic functionally graded (MEE-FG) beam via different thermal loadings and various boundary conditions is suggested in this paper. Magneto electro mechanical coupling properties of FGM beam are taken to vary via the thickness direction of beam. The rule of power-law is changed to consider inclusion of porosity according to even and uneven distribution. Pores possibly occur inside FGMs due the result of technical problems that lead to creation of micro-voids in these materials. Change in pores along the thickness direction stimulates the mechanical and physical properties. Four-variable tangential-exponential refined theory is employed to derive the governing equations and boundary conditions of porous FGM beam under magneto-electrical field via Hamilton's principle. An analytical model procedure is adopted to achieve the non-dimensional buckling load of porous FG beam exposed to magneto-electrical field with various boundary conditions. In order to evaluate the influence of thermal loadings, material graduation exponent, coefficient of porosity, porosity distribution, magnetic potential, electric voltage and boundary conditions on the critical buckling temperature of the beam made of magneto electro elastic FG materials with porosities a parametric study is presented. It is concluded that these parameters play remarkable roles on the buckling behavior of porous MEE-FG beam. The results for simpler states are proved for exactness with known data in the literature. The proposed numerical results can serve as benchmarks for future analyses of MEE-FG beam with porosity phases.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1488-1490
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• 2000

ZnO:Cu thin films are deposited by using an RF magnetron co-sputtering system with Cu chips attached on ZnO target. Structural and electrical properties are analyzed as a function of deposition conditions, such as Cu chip areas, $O_2/(Ar+O_2)$ ratios, and working pressures, The results show that a higher electrical resistivity above $10^{10}$ ${\Omega}cm$ along with an excellent c-axial growth can be easily achieved by Cu-doping. SAW filters based on the ZnO:Cu films are also fabricated to estimate the electric-mechanical coupling coefficient($K^{2}_{eff}$). Higher $K^{2}_{eff}$ and lower insertion losses are observed for ZnO:Cu films, compared with those for ZnO films.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.1
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• pp.390-395
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• 2011

In order to develope piezoelectric transformer for the ballast of fluorescent lamp, the composition of piezoelectric ceramics was 0.95Pb($Zr_xTi_{1-x}$)O3+yPb($Mn_{1/3}Nb_{2/3}$)$O_3$+(0.05-y)Pb($Sb_{1/2}Nb_{1/2}$)$O_3$. PMN compound was selected to improve mechanical quality factor and PSN to prevent the decrease of dielectric constant and electromechanical coupling coefficient. Dielectric and piezoelectric characteristics in the region of MPB of 0.95Pb($Zr_xTi_{1-x}$)$O_3$+yPb($Mn_{1/3}Nb_{2/3}$)$O_3$+(0.05-y)Pb($Sb_{1/2}Nb_{1/2}$)$O_3$ ceramics was discussed both quantatively and qualitatively.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.12
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• pp.654-664
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• 2000

Thin films of ZnO are deposited by using an RF magnetron sputtering with varying the substrate temperature(RT~39$0^{\circ}C$) and RF power(50~250W). Cu-doped ZnO(denoted by ZnO:Cu) films have also been prepared by co-spputtering of a ZnO target on which some Cu-chips are attached. Different substrate materials, such as Si, $SiO_{2}/Si$, sapphire, DLC/Si, and poly-diamond/Si, are employed to compare the c-axial growth features of deposited ZnO films. Texture coefficient(TC) values for the (002)-preferential growth are estimated from the XRD spectra of deposited films. Optimal ranges of RF powers and substrate temperatures for obtaining high TC values are determined. Effects of Cu-doping conditions, such as relative Cu-chip sputtering areas, $O_{2}/(Ar+O_{2})$ mixing ratios, and reactor pressures, on TC values, electrical resistivities, and relative Cu-compositions of deposited ZnO:Cu films have been systematically investigated. XPS study shows that the relative densities of metallic $Cu(Cu^{0})$ atoms and $CuO(Cu^{2+})$-phases within deposited films may play an important role of determining their electrical resistivities. It should be noted from the experimental results that highly resistive(> $10^{10}{\Omega}cm$ ZnO films with high TC values(> 80%) can be achieved by Cu-doping. SAW devices with ZnO(or Zn):Cu)/IDT/$SiO_{2}$/Si configuration are also fabricated to estimate the effective electric-mechanical coupling coefficient($k_{eff}^{2}$) and the insertion loss. It is observed that the devices using the Cu-doped ZnO films have a higher $k_{eff}^{2}$ and a lower insertion loss, compared with those using the undoped films.