• 한국항행학회논문지
• /
• 제18권1호
• /
• pp.35-43
• /
• 2014

본 논문은 무선 전력 전송에 관한 이론을 토대로 송신부와 수신부의 두 개의 평면 코일 사이의 자기 유도 원리의 다양한 조건 변화에 따른 무 접촉 무선 전력 전송에 관한 연구이다. 실험은 무 접촉 방식으로 전력을 전송 할 수 있는 송신부인 1차 측 코일과 수신부인 2차 측 코일 및 하프브리지 직렬 공진 컨버터를 적용한 무선 전원 장치의 송신부 회로와 수신부회로의 출력 전압 및 전원을 계산할 수 있는 환경을 마련해 주었다. 송신부의 유도 결합 공진 컨버터의 주 전원은 태양광 전지 모듈과 대체 광원으로서 인공 광원(할로겐 램프)을 이용하여 전기 에너지로 변환 시켜 사용하였으며 태양광 발전으로부터 공급받은 24 V 전원을 무선 전력 전송 장치를 위한 입력 전원으로 사용하였다. 실험 결과, 전달 받은 전력은 수신부 회로에서 조명을 밝히거나 배터리를 충전하는데 사용된다. 그리고 송신부의 출력 측에서 측정을 통해 수신부의 입력 전력과 비교하여 무선 전력 전송 효율은 약 70~89%로 나타났다. 또한 이 논문을 위해서, 무선 전력 전송 시 이물질이 간섭하였을 때, ID 검증 방식과 전압의 위상차 비교 방법을 통해 효율성 실험을 하였다.

• 대한기계학회논문집A
• /
• 제35권12호
• /
• pp.1537-1542
• /
• 2011

본 논문은 복합형 하이브리드 굴삭기를 위한 동력전달계 제어기법에 대하여 기술하였다. 하이브리드 굴삭기는 기존 굴삭기의 동력전달계를 하이브리드화 하여 연비향상 및 배출가스 저감을 목표로 개발되고 있다. 특히 복합형 하이브리드 굴삭기는 유압시스템의 일부를 전기시스템으로 대체하여 낮은 유압효율로 인한 에너지 손실을 줄일 수 있도록 구성되어 있다. 해당 굴삭기의 하이브리드 동력 제어기는 동력전달계의 동력 흐름을 관리하여 굴삭기의 연비를 향상 시키고, 슈퍼 커패시터의 충전량을 적절한 범위에서 유지하며, 기존 굴삭기에 준하는 성능을 유지하여야 한다. 이를 위하여 본 논문에서는 슈퍼 캐패시터의 충전량 기반의 서모스탯(Thermostat)형 제어기와 실시간 최적해를 이용한 ECMS 제어기를 설계하였으며 시뮬레이션을 통하여 그 성능을 검증하였다. 시뮬레이션 결과, 하이브리드 굴삭기의 연비가 대략 20% 이상 향상될 것으로 기대되며, 특히 등가 연료 개념을 이용한ECMS 제어기의 성능이 서모스탯(Thermostat)형 제어기에 비해 연비 및 슈퍼 커패시터 충전량 관리 측면에서 보다 향상된 것을 확인하였다.

• 센서학회지
• /
• 제10권1호
• /
• pp.62-70
• /
• 2001

CBD방법으로 성장하여 $450^{\circ}C$로 열처리한 ZnSe 박막은 회전 무늬로부터 외삽법으로 구한 격자상수 $a_0$가 $5.6678\;{\AA}$인 zinc blend임을 알았다. Van der Pauw 방법으로 측정한 Hall 데이터에 의한 이동도는 10 K에서 150 K 까지는 불순물 산란 (impurity scatterimg)에 의하여, 150 K에서 293 K까지는 격자산란 (lattice scattering)에 의하여 감소하는 경향을 나타냈다. 또한 운반자 농도의 ln n대 1/T에서 구한 활성화 에너지($E_a$)는 0.27 eV였다. 투과 곡선의 투과단으로 본 띠 간격은 293 k에서 $2,700{\underline{5}}\;eV$이었던 것이 10K에서는 $2.873{\underline{9}}\;eV$로 변하였다. 광전류 봉우리 위치를 투과단과 비교할 때 293 K에서 30 K까지 관측된 한 개의 봉우리는 가전자대 ${\Gamma}_8$에서 전도대 ${\Gamma}_6$로 전이에 의한 광전류 봉우리이고, 10K에서 관측된 단파장대 417.3 nm($2.971{\underline{4}}\;eV$)의 봉우리는 가전자대 ${\Gamma}_7$에서 전도대 ${\Gamma}_6$로, 431.5 nm($2.873{\underline{3}}\;eV$)의 봉우리는 가전자대 ${\Gamma}_8$에서 전도대 ${\Gamma}_6$로 전이에 의한 광전류 봉우리가 관측된 것으로 판단된다. 광전류 봉우리의 10K에서 단파장대의 가전자대 갈라짐(splitting)에 의해서 측정된 ${\Delta}so$(spin orbit coupling)는 $0.098{\underline{1}}\;eV$ 였다. 10 K에서 광발광 봉우리의 440.7 nm($2.812{\underline{7}}\;eV$)는 자유 엑시톤(free exciton : $E_x$), 443.5 nm ($2.795{\underline{5}}\;eV$)는 주개-얽매인 엑시톤(donor-bound exciton) 인 $I_2(D^0,\;X)$와 445.7 nm ($2.781{\underline{8}}\;eV$)는 반개-얽매인 엑시톤(acceptor-bound exciton) 인 $I_1(A^0,X)$이고, 460.5 nm ($2.692{\underline{3}}\;eV$)는 주개-받개쌍(donor-acceptor pair:DAP) 발광, 580 nm ($2.137{\underline{6}}\;eV$)는 self activated(A)에 기인하는 광발광 봉우리로 분석된다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제49권12호
• /
• pp.654-664
• /
• 2000

Thin films of ZnO are deposited by using an RF magnetron sputtering with varying the substrate temperature(RT~39$0^{\circ}C$) and RF power(50~250W). Cu-doped ZnO(denoted by ZnO:Cu) films have also been prepared by co-spputtering of a ZnO target on which some Cu-chips are attached. Different substrate materials, such as Si, $SiO_{2}/Si$, sapphire, DLC/Si, and poly-diamond/Si, are employed to compare the c-axial growth features of deposited ZnO films. Texture coefficient(TC) values for the (002)-preferential growth are estimated from the XRD spectra of deposited films. Optimal ranges of RF powers and substrate temperatures for obtaining high TC values are determined. Effects of Cu-doping conditions, such as relative Cu-chip sputtering areas, $O_{2}/(Ar+O_{2})$ mixing ratios, and reactor pressures, on TC values, electrical resistivities, and relative Cu-compositions of deposited ZnO:Cu films have been systematically investigated. XPS study shows that the relative densities of metallic $Cu(Cu^{0})$ atoms and $CuO(Cu^{2+})$-phases within deposited films may play an important role of determining their electrical resistivities. It should be noted from the experimental results that highly resistive(> $10^{10}{\Omega}cm$ ZnO films with high TC values(> 80%) can be achieved by Cu-doping. SAW devices with ZnO(or Zn):Cu)/IDT/$SiO_{2}$/Si configuration are also fabricated to estimate the effective electric-mechanical coupling coefficient($k_{eff}^{2}$) and the insertion loss. It is observed that the devices using the Cu-doped ZnO films have a higher $k_{eff}^{2}$ and a lower insertion loss, compared with those using the undoped films.

• Bulletin of the Korean Chemical Society
• /
• 제32권spc8호
• /
• pp.2941-2948
• /
• 2011

A nanogap formed by a metal nanoparticle and a flat metal substrate is one kind of "hot site" for surface-enhanced Raman scattering (SERS). The characteristics of a typical nanogap formed by a planar Au and either an Au and Ag nanoparticle have been well studied using 4-aminobenzenethiol (4-ABT) as a probe. 4-ABT is, however, an unusual molecule in the sense that its SERS spectral feature is dependent not only on the kinds of SERS substrates but also on the measurement conditions; thus further characterization is required using other adsorbate molecules such as 1,4-phenylenediisocyanide (1,4-PDI). In fact, no Raman signal was observable when 1,4-PDI was selfassembled on a flat Au substrate, but a distinct spectrum was obtained when 60 nm-sized Au or Ag nanoparticles were adsorbed on the pendent -NC groups of 1,4-PDI. This is definitely due to the electromagnetic coupling between the localized surface plasmon of Au or Ag nanoparticle with the surface plasmon polariton of the planar Au substrate, allowing an intense electric field to be induced in the gap between them. A higher Raman signal was observed when Ag nanoparticles were attached to 1,4-PDI, irrespective of the excitation wavelength, and especially the highest Raman signal was measured at the 632.8 nm excitation (with the enhancement factor on the order of ${\sim}10^3$), followed by the excitation at 568 and 514.5 nm, in agreement with the finite-difference timedomain calculation. From a separate potential-dependent SERS study, the voltage applied to the planar Au appeared to be transmitted without loss to the Au or Ag nanoparticles, and from the study of the effect of volatile organics, the voltage transmission from Au or Ag nanoparticles to the planar Au also appeared as equally probable to that from the planar Au to the Au or Ag nanoparticles in a nanogap electrode. The response of the Au-Ag nanogap to the external stimuli was, however, not the same as that of the Au-Au nanogap.

• 한국전기전자재료학회논문지
• /
• 제30권9호
• /
• pp.535-540
• /
• 2017

The changes in the electrical characteristics of CMOS ICs due to coupling with a narrow-band electromagnetic wave were analyzed in this study. A magnetron (3 kW, 2.45 GHz) was used as the narrow-band electromagnetic source. The DUT was a CMOS logic IC and the gate output was in the ON state. The malfunction of the ICs was confirmed by monitoring the variation of the gate output voltage. It was observed that malfunction (self-reset) and destruction of the ICs occurred as the electric field increased. To confirm the variation of electrical characteristics of the ICs due to the narrow-band electromagnetic wave, the pin-to-pin resistances (Vcc-GND, Vcc-Input1, Input1-GND) and input capacitance of the ICs were measured. The pin-to-pin resistances and input capacitance of the ICs before exposure to the narrow-band electromagnetic waves were $8.57M{\Omega}$ (Vcc-GND), $14.14M{\Omega}$ (Vcc-Input1), $18.24M{\Omega}$ (Input1-GND), and 5 pF (input capacitance). The ICs exposed to narrow-band electromagnetic waves showed mostly similar values, but some error values were observed, such as $2.5{\Omega}$, $50M{\Omega}$, or 71 pF. This is attributed to the breakdown of the pn junction when latch-up in CMOS occurred. In order to confirm surface damage of the ICs, the epoxy molding compound was removed and then studied with an optical microscope. In general, there was severe deterioration in the PCB trace. It is considered that the current density of the trace increased due to the electromagnetic wave, resulting in the deterioration of the trace. The results of this study can be applied as basic data for the analysis of the effect of narrow-band high-power electromagnetic waves on ICs.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.260-260
• /
• 2013

Multiferroic materials have attracted much attention due to their fascinating fundamental physical properties and technological applications in magnetic/ferroelectric data-storage systems, quantum electromagnets, spintronics, and sensor devices. Among single-phase multiferroic materials, $BiFeO_3 $ is a typical multiferroic material with a room temperature magnetoelectric coupling in view of high magnetic-and ferroelectric-ordering temperatures (Neel temperature $T_N$~647 K and Curie temperature $T_C$~1,103 K). Rare-earth ion substitution at the Bi sties is very interesting, which induces suppressed volatility of Bi ion and improved ferroelectric properties. At the same time, Fe-site substitution with magnetic ions is also attracting, and the enhanced ferromagnetism was reported. In this study, $Bi_{1-x}Dy_xFe_{0.95}Co_{0.05}O_3$ (x=0, 0.05 and 0.1) bulk ceramic compounds were prepared by solid-state reaction and rapid sintering. High-purity $Bi_2O_3$, $Dy_2O_3$, $Fe_2O_3$ and $Co_3O_4$ powders with the stoichiometric proportions were mixed, and calcined at $500^{\circ}C$ or 24 h to produce $Bi_{1-x}Dy_xFe_{0.95}Co_{0.05}O_3$. The samples were immediately put into an oven, which was heated up to $800^{\circ}C$ nd sintered in air for 30 min. The crystalline structure of samples was investigated at room temperature by using a Rigaku Miniflex powder diffractometer. The field-dependent magnetization measurements were performed with a vibrating-sample magnetometer. The electric polarization was measured at room temperature by using a standard ferroelectric tester (RT66B, Radiant Technologies).

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.334-334
• /
• 2013

In the past decade, the infrared detectors based on intersubband transition in quantum dots (QDs) have attracted much attention due to lower dark currents and increased lifetimes, which are in turn due a three-dimensional confinement and a reduction of scattering, respectively. In parallel, focal plane array development for infrared imaging has proceeded from the first to third generations (linear arrays, 2D arrays for staring systems, and large format with enhanced capabilities, respectively). For a step further towards the next generation of FPAs, it is envisioned that a two-dimensional metal hole array (2D-MHA) structures will improve the FPA structure by enhancing the coupling to photodetectors via local field engineering, and will enable wavelength filtering. In regard to the improved performance at certain wavelengths, it is worth pointing out the structural difference between previous 2D-MHA integrated front-illuminated single pixel devices and back-illuminated devices. Apart from the pixel linear dimension, it is a distinct difference that there is a metal cladding (composed of a number of metals for ohmic contact and the read-out integrated circuit hybridization) in the FPA between the heavily doped gallium arsenide used as the contact layer and the ROIC; on the contrary, the front-illuminated single pixel device consists of two heavily doped contact layers separated by the QD-absorber on a semi-infinite GaAs substrate. This paper is focused on analyzing the impact of a two dimensional metal hole array structure integrated to the back-illuminated quantum dots-in-a-well (DWELL) infrared photodetectors. The metal hole array consisting of subwavelength-circular holes penetrating gold layer (2DAu-CHA) provides the enhanced responsivity of DWELL infrared photodetector at certain wavelengths. The performance of 2D-Au-CHA is investigated by calculating the absorption of active layer in the DWELL structure using a finite integration technique. Simulation results show the enhanced electric fields (thereby increasing the absorption in the active layer) resulting from a surface plasmon, a guided mode, and Fabry-Perot resonances. Simulation method accomplished in this paper provides a generalized approach to optimize the design of any type of couplers integrated to infrared photodetectors.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.296-296
• /
• 2014

We investigate experimentally and theoretically the splitting of surface plasmon (SP) resonance peaks under TE- and TM-polarized illumination. The SP structure at infrared wavelength is fabricated with a 2-dimensional square periodic array of circular holes penetrating through Au (gold) film. In brief, the processing steps to fabricate the SP structure are as follows. (i) A standard optical lithography was performed to produce to a periodic array of photoresist (PR) circular cylinders. (ii) After the PR pattern, e-beam evaporation was used to deposit a 50-nm thick layer of Au. (iii) A lift-off processing with acetone to remove the PR layer, leading to final structure (pitch, $p=2.2{\mu}m$; aperture size, $d=1.1{\mu}m$) as shown in Fig. 1(a). The transmission is measured using a Nicolet Fourier-transform infrared spectroscopy (FTIR) at the incident angle from $0^{\circ}$ to $36^{\circ}$ with a step of $4^{\circ}$ both in TE and TM polarization. Measured first and second order SP resonances at interface between Au and GaAs exhibit the splitting into two branches under TM-polarized light as shown in Fig. 1(b). However, as the incidence angle under TE polarization is increased, the $1^{st}$ order SP resonance peak blue-shifts slightly while the splitting of $2^{nd}$ order SP resonance peak tends to be larger (not shown here). For the purpose of understanding our experimental results qualitatively, SP resonance peak wavelengths can be calculated from momentum matching condition (black circle depicted in Fig. 2(b)), $k_{sp}=k_{\parallel}{\pm}iG_x{\pm}jG_y$, where $k_{sp}$ is the SP wavevector, $k_{\parallel}$ is the in-plane component of incident light wavevector, i and j are SP coupling order, and G is the grating momentum wavevector. Moreover, for better understanding we performed 3D full field electromagnetic simulations of SP structure using a finite integration technique (CST Microwave Studio). Fig. 1(b) shows an excellent agreement between the experimental, calculated and CST-simulated splitting of SP resonance peaks with various incidence angles under TM-polarized illumination (TE results are not shown here). The simulated z-component electric field (Ez) distribution at incident angle, $4^{\circ}$ and $16^{\circ}$ under TM polarization and at the corresponding SP resonance wavelength is shown in Fig. 1(c). The analysis and comparison of theoretical results with experiment indicates a good agreement of the splitting behavior of the surface plasmon resonance modes at oblique incidence both in TE and TM polarization.

• 지구물리와물리탐사
• /
• 제5권1호
• /
• pp.56-63
• /
• 2002

해수침투에 관한 연구는 해수침투대가 저비저항 이상대로 나타나기 때문에 주로 전기탐사를 이용한 방법이 있었으나, 우리 나라 서$\cdot$남해안 대부분의 임해 지역은 실트층 또는 점토층과 같은 양전도성 지층을 협재하고 있기 때문에 전기비저항의 대비만으로 해수침투의 여부에 대한 판정을 할 경우 오류를 범할 수도 있다. 따라서 본 논문에서는 해수침투대와 양전도성 지층을 효과적으로 식별하여 해수침투대를 정확히 파악하고자 전라북도 김제와 전라남도 영광 지역에 참조채널 유도분극탐사를 실시하였다. 전자결합을 최소화하는 차폐 전선을 사용하였으며 수신전위 파형은 물론 송신전류 파형도 참조채널에서 함께 측정하는 주파수 영역 참조채널 유도분극탐사기술을 적용하여 겉보기 비저항은 물론 유도분극 효과도 보다 정밀하게 산출하였다. 이러한 현장 탐사에서 참조채널 유도분극탐사를 활용하여 저비저항 특성만으로는 구별할 수 없었던 유도분극 효과가 큰 점토층과 유도분극 효과가 낮은 해수침투대를 구분함으로써 보다 정확한 해석을 가능하게 하였다.