• Title/Summary/Keyword: Electric polarization

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Characterization of the PVDF Fibers Fabricated by Hybrid Wet Spinning (하이브리드 습식 공정을 통한 PVDF 섬유의 제조 및 특성에 관한 연구)

  • Jeong, Kun;Kim, Seong-Su
    • Composites Research
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    • v.29 no.4
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    • pp.145-150
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    • 2016
  • Polyvinylidene fluoride (PVDF) as a representative polymer with the piezoelectric property has been studied since the 1960s. Crystalline structure of poly(vinylidene fluoride) polymer is composed of five different crystal structure of the polymer as a semi-crystalline. Among the various crystal structures, ${\beta}-type$ crystal exhibits a piezoelectricity because the permanent dipoles are aligned in one direction. Generally ${\beta}-form$ crystal structure can be obtained through the transformation of the ${\alpha}-form$ crystal structure by the stretching and it can increase the amount through the after treatment as poling process after stretching. ${\beta}-form$ crystal structure the PVDF fibers produced by wet spinning is formed through a diffusion mechanism of a polar solvent in the coagulation bath. However, it has a disadvantage that the diffusion path of the solvent remains as pores in the fiber because the fiber solidification occurs simultaneously with the diffusion of the polar solvent. These pores play a role in reducing effect of poling process owing to effect of disturbances acting on the polarization by the electric field. In this work, the drying method using the microwave was introduced to remove more effectively the residual solvent and the pore within PVDF fibers produced through wet-spinning process and piezoelectric PVDF fibers was produced by transformation of the remaining ${\alpha}$ form crystal structure into ${\beta}-crystal$ structure through the stretching process.

Dominant Migration Element in Electrochemical Migration of Eutectic SnPb Solder Alloy in D. I. Water and NaCl Solutions (증류수 및 NaCl 용액내 SnPb 솔더 합금의 Electrochemical Migration 우세 확산원소 분석)

  • Jung, Ja-Young;Lee, Shin-Bok;Yoo, Young-Ran;Kim, Young-Sik;Joo, Young-Chang;Park, Young-Bae
    • Journal of the Microelectronics and Packaging Society
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    • v.13 no.3 s.40
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    • pp.1-8
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    • 2006
  • Higher density integration and adoption of new materials in advanced electronic package systems result in severe electrochemical reliability issues in microelectronic packaging due to higher electric field under high temperature and humidity conditions. Under these harsh conditions, metal interconnects respond to applied voltages by electrochemical ionization and conductive filament formation, which leads to short-circuit failure of the electronic package. In this work, in-situ water drop test and evaluation of corrosion characteristics for SnPb solder alloys in D.I. water and NaCl solutions were carried out to understand the fundamental electrochemical migration characteristics and to correlate each other. It was revealed that electrochemical migration behavior of SnPb solder alloys was closely related to the corrosion characteristics, and Pb was primarily ionized in both D.I. water and $Cl^{-}$ solutions. The quality of passive film formed at film surface seems to be critical not only for corrosion resistance but also for ECM resistance of solder alloys.

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Performance of EDLC Electrodes Prepared by Post Treatments of Commercial Activated Carbon (상업용 활성탄의 후처리에 의하여 제조된 전기이중층 커패시터용 전극재의 특성)

  • Wu, Jing-Yu;Hong, Ik-Pyo;Kim, Myung-Soo
    • Journal of the Korean Applied Science and Technology
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    • v.30 no.2
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    • pp.362-370
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    • 2013
  • The coconut shell based activated carbon was applied for EDLC (electric double layer capacitor) electrode with the post treatments. The electrochemical properties were evaluated with a coin cell using the activated carbon as electrode. The initial gravimetric and volumetric capacitance of the coconut shell based activated carbon electrode s were 66 F/g and 39 F/cc, and these values decreased to 54 F/g and 32 F/cc after 100 cycles, respectively showing 82% of charge-discharge efficiency. The properties of CV graph with the commercial activated carbon electrodes showed the serious polarization as the result of additional reaction between electrolyte and impurities of the electrode materials. In order to remove impurities efficiently, the commercial activated carbon was treated by alkali and acid solutions consecutively, and then heat treated to control the pore size distribution and the content of surface functional groups. The surface functional groups decreased with the increased heat temperature and the specific capacitance increased with the decreased surface functional groups. The initial capacitance of coconut shell based activated carbon elec trode which was treated with NaOH and HNO3, and then heat treated at $800^{\circ}C$ was 44 F/cc, and the value turned out to be 42 F/cc after 100 cycles, showing over 95% of charge-discharge efficiency.

커패시터에의 적용을 위해 PET 필름에 스퍼터 증착한 ZrO2 박막의 특성

  • Gwon, Neung;Fei, Chen;Ryu, Han;Park, Sang-Sik
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.389.1-389.1
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    • 2014
  • 최근의 환경 및 에너지에 대한 관심으로 수요가 증가하고 있는 하이브리드 및 전기 자동차나 태양광발전, 풍력발전용의 인버터기기에는 고에너지밀도 커패시터가 필수적이 되었다. 높은 에너지 밀도를 요구하는 전력전자, 펄스파워 등의 응용분야에 사용되는 고에너지밀도 커패시터는 PET (Polyethylene terephtalate)와 PP (Polypropylene)와 같은 폴리머 유전체를 사용하는 범용 필름 커패시터가 사용되었으나 사용 요구 조건의 한계에 도달하여, 새로운 유전체를 적용하는 커패시터가 절실히 필요한 상황이다. PET와 PP와 같은 유전체는 유전상수가 2~3의 낮은 값을 가지고 있어 고에너지밀도를 구현하기가 어렵다. 본 연구에서는 새롭게 요구되고 있는 고에너지 밀도 커패시터의의 성능을 만족시키기 위하여 $20{\sim}50{\mu}m$ 두께의 PET 필름상에 세라믹 유전체인 $ZrO_2$ 박막을 스퍼터(Sputter) 증착법에 의해 코팅하여 종래의 필름 커패시터와 세라믹 커패시터의 장점을 갖는 커패시터를 제조하기 위한 박막 유전재료의 개발을 목표로 하였다. 수백 nm~수 ${\mu}m$ 두께의 $ZrO_2$ 박막을 스퍼터링 공정조건에 따라 증착한 후 박막의 결정성, 기판과의 부착성, 증착속도, 유전상수, 절연파괴강도, 온도안정성 등을 XRD, SEM, AFM, EDS, XPS, Impedance analyzer 등에 의해 평가하였다. $ZrO_2$ 유전체막은 상온에서 증착하였음에도 정방정(tetragonal)구조의 결정질로 성장하였고 증착압력이 증가함에 따라 주피크의 세기가 감소하였다. 증착 중 산소가스를 주입하였을 경우에도 결정질막으로 성장하였다. 증착막들은 산소가스의 양이 증가함에 따라 짙은 흰색으로 변하였으며 PET 기판과의 접착력도 약해졌다. 또한 거칠기는 Ar가스만으로 증착한 경우보다 증가하였으며 24~66 nm의 평균 거칠기값을 보였다. PET위에 Ar가스만으로 증착한 $ZrO_2$의 비유전율은 1kHz에서 116~87의 비유전율을 보여 PET에 비해 매우 우수한 특성을 보였다. $ZrO_2$ 막들은 300kV/cm의 전계에서 대략 10-8A 이하의 누설전류를 보였다. 증착가스비를 달리하여 제조된 시편에서도 유사한 누설전류값을 나타내었다. 300 kV/cm 전후의 전계까지 측정한 $ZrO_2$ 막의 P-E (polarization-electric field) 특성을 확인하였는데, 5 mTorr의 압력에서 증착한 막은 253 kV/cm에서 $5.5{\mu}C/cm^2$의 분극값을 보였다. P-E커브의 기울기와 분극량에 따라 에너지밀도가 달라지므로 공정조건에 따라 에너지밀도가 변화됨을 예측할 수 있었다. PET위에 스퍼터 증착한 $ZrO_2$ 유전체막은 5mTorr의 Ar가스분위기에서 제조할 때 가장 안정적인 구조를 보였으며, 고에너지밀도 커패시터에의 적용가능성을 보였다.

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Characteristics of InGaAs/GaAs/AlGaAs Double Barrier Quantum Well Infrared Photodetectors

  • Park, Min-Su;Kim, Ho-Seong;Yang, Hyeon-Deok;Song, Jin-Dong;Kim, Sang-Hyeok;Yun, Ye-Seul;Choe, Won-Jun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.324-325
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    • 2014
  • Quantum wells infrared photodetectors (QWIPs) have been used to detect infrared radiations through the principle based on the localized stated in quantum wells (QWs) [1]. The mature III-V compound semiconductor technology used to fabricate these devices results in much lower costs, larger array sizes, higher pixel operability, and better uniformity than those achievable with competing technologies such as HgCdTe. Especially, GaAs/AlGaAs QWIPs have been extensively used for large focal plane arrays (FPAs) of infrared imaging system. However, the research efforts for increasing sensitivity and operating temperature of the QWIPs still have pursued. The modification of heterostructures [2] and the various fabrications for preventing polarization selection rule [3] were suggested. In order to enhance optical performances of the QWIPs, double barrier quantum well (DBQW) structures will be introduced as the absorption layers for the suggested QWIPs. The DBWQ structure is an adequate solution for photodetectors working in the mid-wavelength infrared (MWIR) region and broadens the responsivity spectrum [4]. In this study, InGaAs/GaAs/AlGaAs double barrier quantum well infrared photodetectors (DB-QWIPs) are successfully fabricated and characterized. The heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIPs are grown by molecular beam epitaxy (MBE) system. Photoluminescence (PL) spectroscopy is used to examine the heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIP. The mesa-type DB-QWIPs (Area : $2mm{\times}2mm$) are fabricated by conventional optical lithography and wet etching process and Ni/Ge/Au ohmic contacts were evaporated onto the top and bottom layers. The dark current are measured at different temperatures and the temperature and applied bias dependence of the intersubband photocurrents are studied by using Fourier transform infrared spectrometer (FTIR) system equipped with cryostat. The photovoltaic behavior of the DB-QWIPs can be observed up to 120 K due to the generated built-in electric field caused from the asymmetric heterostructures of the DB-QWIPs. The fabricated DB-QWIPs exhibit spectral photoresponses at wavelengths range from 3 to $7{\mu}m$. Grating structure formed on the window surface of the DB-QWIP will induce the enhancement of optical responses.

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Characteristics of Memory Windows of MFMIS Gate Structures (MFMIS 게이트 구조에서의 메모리 윈도우 특성)

  • Park, Jun-Woong;Kim, Ik-Soo;Shim, Sun-Il;Youm, Min-Soo;Kim, Yong-Tae;Sung, Man-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.319-322
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    • 2003
  • To match the charge induced by the insulators $CeO_2$ with the remanent polarization of ferro electric SBT thin films, areas of Pt/SBT/Pt (MFM) and those of $Pt/CeO_2/Si$ (MIS) capacitors were ind ependently designed. The area $S_M$ of MIS capacitors to the area $S_F$ of MFM capacitors were varied from 1 to 10, 15, and 20. Top electrode Pt and SBT layers were etched with for various area ratios of $S_M\;/\;S_F$. Bottom electrode Pt and $CeO_2$ layers were respectively deposited by do and rf sputtering in-situ process. SBT thin film were prepared by the metal orgnic decomposition (MOD) technique. $Pt(100nm)/SBT(350nm)/Pt(300nm)/CeO_2(40nm)/p-Si$ (MFMIS) gate structures have been fabricated with the various $S_M\;/\;S_F$ ratios using inductively coupled plasma reactive ion etching (ICP-RIE). The leakage current density of MFMIS gate structures were improved to $6.32{\times}10^{-7}\;A/cm^2$ at the applied gate voltage of 10 V. It is shown that in the memory window increase with the area ratio $S_M\;/\;S_F$ of the MFMIS structures and a larger memory window of 3 V can be obtained for a voltage sweep of ${\pm}9\;V$ for MFMIS structures with an area ratio $S_M\;/\;S_F\;=\;6$ than that of 0.9 V of MFS at the same applied voltage. The maximum memory windows of MFMIS structures were 2.28 V, 3.35 V, and 3.7 V with the are a ratios 1, 2, and 6 at the applied gate voltage of 11 V, respectively. It is concluded that ferroelectric gate capacitors of MFMIS are good candidates for nondestructive readout-nonvolatile memories.

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Electrochemical Characteristics of EDLC with various Organic Electrolytes (유기전해질에 따른 EDLC의 전기화학적 특성)

  • Yang Chun-Mo;Lee J.K.;Cho W.I.;Cho B.W.;Rim Byung-O
    • Journal of the Korean Electrochemical Society
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    • v.4 no.3
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    • pp.113-117
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    • 2001
  • Specific capacitance and charge-discharge rate of EDLC using activated carbon electrode were affected by the compositions of electrolytes, the conditions of charge-discharge and physical properties of activated carbon materials. The activated carbon electrode was prepared by dip coating method. Charge-discharge test and electrochemical experiments were carried out for various kinds of organic electrolytes. Effects of charge and discharge current density on the specific capacitance were studied. Characteristics of leakage current, self-discharge and time-voltage curves in optimum conditions of organic electrolytes were compared with conventional $1M-Et_4NBF_4/PC$ electrolyte. The EDLC using MSP-20(specific surface area: $2000m^2/g$) electrode and $1M-LiPF_6/PC-DEC(1:1)$ was exhibited th highest specific capacitance of 130F/g and low polarization resistances. The EDLC using MSP-20 electrode at $1M-LiPF_6/PC-DEC(1:1)$ was small leak current of 0.0004A for 15min, long voltage retention of 0.8V after 100h and linear time-voltage curves with small IR-drop.

Study on Burnability and Reactivity of High Al2O3 Content OPC Clinker for the Use of Industrial Waste (산업부산물 활용을 위한 고Al2O3 함량 OPC 클링커의 소성성 및 반응성에 관한 연구)

  • Kang, Bong-Hee;Choi, Jaewon;Ki, Tae-Kyoung;Kwon, Sang-Jin;Kim, Gyu-Yong
    • Journal of the Korean Recycled Construction Resources Institute
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    • v.8 no.3
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    • pp.294-301
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    • 2020
  • This study evaluated the burnability and hydration reaction of clinker burned with high Al2O3 content OPC to apply large amounts of industrial by-products in the cement manufacturing process. Specifically, after preparing a clinker with a high C3A content by burning the OPC raw material with a high content of Al2O3 in a laboratory electric furnace, the burnability of the clinker was evaluated through XRD Rietveld analysis and polarization microscopy, and clinker hydration reactivity was reviewed through the Isothermal conduction calorimetry analysis and the cement compressive strength. As a result, the kiln burning temperature for the production of high Al2O3 content clinker lower, and the compressive strength was equal to or higher than OPC. Therefore it was confirmed the possibility to manufacturing energy-saving high Al2O3 content clinker using a large amount of industrial by-products.

Electrochemical Characteristics of Ru Added Li4Ti5O12 as an Anode Material (Ru를 첨가한 음극활물질 Li4Ti5O12의 전기화학적 특성)

  • Cho, Woo-Ram;Na, Byung-Ki
    • Clean Technology
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    • v.20 no.4
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    • pp.433-438
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    • 2014
  • There is an increasing interest in the development of rechargeable batteries suitable for use in both hybrid electric vehicles and energy storage systems that require higher charge & discharge rates, bigger battery sizes and increased safety of the batteries. Spinel-type lithium titanium oxide ($Li_4Ti_5O_{12}$) as a potential anode for lithium ion batteries has many advantages. It is a zero-strain materials and it experiences no structural change during the charge/discharge precess. Thus, it has long cycle life due to its structural integrity. It also offers a stable operation voltage of approximately 1.55 V versus $Li^+/Li$, above the reduction potential of most organic electrolyte. In this study, Ru added $Li_4Ti_5O_{12}$ composites were synthesized by solid state process. The characteristics of active material were investigated with TGA-DTA, XRD, SEM and charge/discharge test. The capacity was reduced when Ru was added, however, the polarization decreased. The capacity rate of $Li_4Ti_5O_{12}$ with Ru (3%, 4%) addition was reduced during the charge/discharge precess with 10 C-rate as a high current density.

Effect of Temperature and Compressive Stress on the Dielectric and Piezoelectric Properties of PIN-PMN-PT Single Crystal (온도 및 압축응력 변화에 따른 PIN-PMN-PT 단결정의 유전 및 압전 특성)

  • Lim, Jae Gwang;Park, Jae Hwan;Lee, Jeongho;Lee, Sang Goo
    • Journal of the Microelectronics and Packaging Society
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    • v.26 no.4
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    • pp.63-68
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    • 2019
  • Dielectric and piezoelectric properties of PIN-PMN-PT piezoelectric single crystals with variation of temperature and compressive stress were investigated. The crystal phase of the single crystal was changed from the ferroelectric rhombohedral structure to tetragonal structure in the 110℃ region and from the tetragonal structure to the paraelectric cubic structure in the 190℃ region. The piezoelectric constant and relative dielectric constant were calculated from the rate of change of polarization and displacement with the application of electric field, which was similar to the value measured from the instrument. As the compressive stress applied to the sample increased, the piezoelectric constant d33 and relative dielectric constant values tended to increase. When the compressive stress applied to the sample at 5℃ was 60 MPa, the d33 was calculated as 4,500 pC/N. At 60℃, the relative dielectric constant of 62000 was calculated when the compressive stress applied to the sample was 40 MPa. The increase in piezoelectric constant and relative dielectric constant when the compressive stress increased could be attributed to the phase transition from the rhombohedral structure to orthorhombic.