• Proceedings of the IEEK Conference
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• 2000.07b
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• pp.973-976
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• 2000

This paper proposes a new polarization diversity scheme for OPFDM (Orthogonal Polarization and Frequency Division Multiplexing). OPFDM is an extension of OFDM (Orthogonal Frequency Division Multiplexing) in conjunction with polarization multiplexing in order to ensure the orthogonality amongst subcarriers. Since OPFDM uses two orthogonally polarized channels, it can easily employ the polarization diversity. In order to get the diversity gain effectively in a frequency selective fading channel, the proposed scheme combines the signals in subcarrier-by-subcarrier basis. The computer simulation results confirm that the proposed scheme is superior to conventional one in the two orthogonally polarized two-ray Rayleigh fading channels with cross-talk between the two channels.

• Journal of the Korean Ceramic Society
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• v.37 no.1
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• pp.6-11
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• 2000

Electron emission from the Pb(ZrxTi1-x)O3 ferroelectrics by pulsed electric field has been investigated as a function of Zr/Ti ratios such as 35/65, 50/50 and 65/35 below 250kV/cm. Electrons were emitted regardless of the applied field polarity to the rear electrode. When the negative field was applied to the rear electrode, the electron emission charge was more stable. It was proved that the electrons were emitted at the edge of the upper electrode. The emission charge increased in order of 65/35>50/50>35/65. The electron emission characteristics were dependent on the ferroelectric properties such as polarization and coercive field. The emission charge and emission threshold field were affected by the polarization change and the coercive field, respectively. This result explains that the electron emission is a field emission with polarization induced surface potential by a modified Fowler-Nordheim plot of emission charge.

• Journal of the Semiconductor & Display Technology
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• v.19 no.4
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• pp.84-87
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• 2020

The properties of ultra-thin two-dimensional (2D) organic ferroelectric Langmuir-Blodgett (LB) films of the poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] were investigated to find possible applicability in flexible and wearable electronics applications. In the C-V characteristics of the MFM capacitor of 2-monolayer of 5 nm films, a butterfly hysteresis curve due to the ferroelectricity of P(VDF-TrFE) was confirmed. Typical residual polarization value was measured at 2μC/㎠. When the MFM capacitor with ultra-thin ferroelectric film was measured by applying a 10 Hz bipolar pulse, it was shown that 65% of the initial polarization value in 105 cycles deteriorated the polarization. The leakage current density of the 2-monolayer film was maintained at about 5 × 10-8 A/㎠ for the case at a 5MV/cm electric field. The resistivity of the 2-monolayer film in the case at an electric field at 5 MV/cm was more than 2.35 × 1013 Ω·cm.

• Journal of Electrochemical Science and Technology
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• v.13 no.3
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• pp.369-376
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• 2022

In this study, the stability of an anion exchange membrane water electrolyzer (AEMWE) cell was evaluated in an on-off cycling operation with respect to an applied electric bias, i.e., a current density of 500 mA cm^-2, and an open circuit. The ohmic and polarization resistances of the system were monitored during operation (~800 h) using electrochemical impedance spectra. Specific consideration was given to the ohmic resistance of the cell, especially that of the membrane under on-off cycling conditions, by consistently feeding the cell with KOH solution. Owing to an excess feed solution, a momentary increase in the polarization resistance was observed immediately after the open-circuit. The excess feed solution was mostly recovered by subjecting the cell to the applied electric bias. Stability tests on the AEMWE cell under on-off cycling with continuous feeding even under an open circuit can guarantee long-term stability by avoiding an irreversible increase in ohmic and polarization resistances.

• Korean Journal of Materials Research
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• v.12 no.1
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• pp.75-81
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• 2002

The ferroelectric properties of Pb(Zr,Ti)O$_3$[PZT] films degrade when the films with Pt top electrodes are annealed in hydrogen containing environment. This is due to the reduction activity of atomic hydrogen that is generated by the catalytic activity of the Pt top electrode. At the initial stage of hydrogen annealing, oxygen vacancies are formed by the reduction activity of hydrogen mainly at the vicinity of top Pt/PZT interface, resulting in a shift of P-E (polarization-electric field) hysteresis curve toward the negative electric field direction. As the hydrogen annealing time increases, oxygen vacancies are formed inside the PZT film by the inward diffusion of hydrogen ions, as a result, the polarization degrades significantly and the degree of P-E curve shift decreases gradually. The direction and the magnitude of the remnant polarization in the PZT film affect the motion of hydrogen ions which determines the degradation of polarization characteristics and the shift in the P-E hysteresis curve of the PZT capacitor during hydrogen annealing. When the remnant polarization is formed in the PZT film by applying a pre-poling voltage prior to hydrogen annealing, the direction of the P-E curve shift induced by hydrogen annealing is opposite to the polarity of the pre-poling voltage. The hydrogen-induced degradation behavior of the PZT capacitor is also affected by the internal field that has been generated in the PZT film by the charges located at the top interface prior to hydrogen annealing.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.99-99
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• 2013

In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

• Advances in materials Research
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• v.9 no.1
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• pp.1-14
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• 2020

The hybrid method of three-dimensional ion implantation and electric arc is presented as a novel plasma-ion technique that allows by means of high voltage pulsed and electric arc discharges, the bombardment of non-metallic and metallic ions then implanting upon the surface of a solid surface, especially out of metallic nature. In this study AISI/SAE 4140 samples, a tool type steel broadly used in the industry due to its acceptable physicochemical properties, were metallographically prepared then surface modified by implanting titanium and simultaneously titanium and nitrogen particles during 5 min and 10 min. The effect of the ion implantation technique over the substrate surface was analysed by characterization and electrochemical techniques. From the results, the formation of Ti micro-droplets upon the surface after the implantation treatment were observed by micrographs obtained by scanning electron microscopy. The presence of doping particles on the implanted substrates were detected by elemental analysis. The linear polarization resistance, potentiodynamic polarization and total porosity analysis demonstrated that the samples whose implantation treatment with Ti ions for 10 min, offer a better protection against the corrosion compared with non-implanted substrates and implanted at the different conditions in this study.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.14-16
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• 2009

Surface driven switching of the liquid crystal bulk arising from the coupling between an applied electric field and a polarized state of a nematic liquid crystal, both localized at the substrate surface, is reported. Fast switching is demonstrated in a hybrid aligned nematic cell with a fringe electric field generated by comb-like electrode structure.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1861-1863
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• 1999

The polarization gratings were fabricated in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film applicable to a medium of the polarization holography and their diffraction efficiencies$(\eta)$ were monitored by real-time measurement. The polarization gratings prepared consisted of the multi-layer thin film system. As a method to improve the $\eta$, we have investigated its change for the field effect. As the results, the value of $\eta$ strongly depended on the voltage applied to the film and the maximum value, $\eta_{max}$ was enhanced to be about 4 times in comparison with that of not biased sample. In addition, an increase in the $\eta$ can be estimated to be due to additional creation of new defects caused by the electric field across the film.

• Journal of Magnetics
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• v.18 no.3
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• pp.317-320
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• 2013

We studied the polarization state in an apertureless scanning near-field microscopy (a-SNOM) operating in reflection mode by using three-dimensional Finite-difference Time-domain (FDTD) method. As a result, the electric field around tip apex in the near-field region enhanced four times stronger than the incident light for ppolarization when the tip-sample separation was 10 nm. We find that the p- and s-polarization state is maintained for the scattered light when the probe is perpendicular to the sample. When the probe is not perpendicular to the sample, the polarization state of scattered light will rotate an angle that equals to the inclination angle of probe with p-polarization illumination. On the other hand, the polarization state will not rotate with s-polarization illumination.