The dependence of the electric field effect of diffraction efficiency using polarization beam on calcogenide thin films

칼코게나이드 박막에서 편광 빔 회절 효율의 전계 효과 의존성

  • Jang, Sun-Joo (Dept. of Electronic Materials Eng., Kwangwoon University) ;
  • Yeo, Cheol-Ho (Dept. of Electronic Materials Eng., Kwangwoon University) ;
  • Park, Jeong-Il (Dept. of Electronic Materials Eng., Kwangwoon University) ;
  • Lee, Hyun-Yong (Center for Teraherz Photonics, POSTECH) ;
  • Chung, Hong-Bay (Dept. of Electronic Materials Eng., Kwangwoon University)
  • 장선주 (광운대학교 공대 전자재료공학과) ;
  • 여철호 (광운대학교 공대 전자재료공학과) ;
  • 박정일 (광운대학교 공대 전자재료공학과) ;
  • 이현용 (포항공대 Terahertz Photonics 연구단) ;
  • 정홍배 (광운대학교 공대 전자재료공학과)
  • Published : 1999.07.19

Abstract

The polarization gratings were fabricated in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film applicable to a medium of the polarization holography and their diffraction efficiencies$(\eta)$ were monitored by real-time measurement. The polarization gratings prepared consisted of the multi-layer thin film system. As a method to improve the $\eta$, we have investigated its change for the field effect. As the results, the value of $\eta$ strongly depended on the voltage applied to the film and the maximum value, $\eta_{max}$ was enhanced to be about 4 times in comparison with that of not biased sample. In addition, an increase in the $\eta$ can be estimated to be due to additional creation of new defects caused by the electric field across the film.

Keywords