• Journal of the Korean Ceramic Society
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• v.41 no.11
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• pp.851-857
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• 2004

The stabilizing characteristics of heavy metals in the silicate glass (SD), borosilicate glass (BD), and leadsilicate glass (PD) containing Electric Arc furnace (EAF) dust were studied by the Toxic Characterization Leaching Procedure (TCLP) test. Also, the dependence of the amount of EAF dust upon structural changes of SD, BD, and PD glasses and the TCLP results were investigated by the XRD and FT-IR spectroscopy. In the XRD results, all of SD, BD, and PD specimens containing dust up to 30 wt% were amorphous without crystallizing. In the TCLP test, the concentration of heavy metals leached from the glasses increased with the amount of EAF dust added. The SD specimen series showed the lowest heavy metal leaching and the heavy metal leachate of the PD specimens were lower than those of the BD specimens. But, the Pb leaching from the PD specimens was the highest in the PD glass composition due to the high Pb content. The value of oxygen/network former ratio could be used to compare the chemical durability within the same glass series, but not proper to do between the different glass series. Adding the EAF dust to the SD mother glass, decreased the Si-O-Si symmetry and increased the non-bridging oxygen, which weakened the structure and decreased the chemical durability of glasses. In the BD series glasses, the addition of EAF dust caused the structural changes from tetra-borate group to di-borate group and the formation of the 2-dimensional layer structure of pyre- and ortho- borate, which decreased the chemical durability of glasses. It is concluded that SD series glass among the 3 kinds of glasses is the most effective to stabilize the heavy metals of EAF dust.

• Journal of the Korean Recycled Construction Resources Institute
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• v.8 no.3
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• pp.294-301
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• 2020

This study evaluated the burnability and hydration reaction of clinker burned with high Al₂O₃ content OPC to apply large amounts of industrial by-products in the cement manufacturing process. Specifically, after preparing a clinker with a high C₃A content by burning the OPC raw material with a high content of Al₂O₃ in a laboratory electric furnace, the burnability of the clinker was evaluated through XRD Rietveld analysis and polarization microscopy, and clinker hydration reactivity was reviewed through the Isothermal conduction calorimetry analysis and the cement compressive strength. As a result, the kiln burning temperature for the production of high Al₂O₃ content clinker lower, and the compressive strength was equal to or higher than OPC. Therefore it was confirmed the possibility to manufacturing energy-saving high Al₂O₃ content clinker using a large amount of industrial by-products.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.2
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• pp.125-130
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• 1993

We has made 2-zone vertical electric furnace and has been grown CdS single crystal by sublimation method in crystal growth tube with tail tube without seed crystal for growth. While it has been growing, temperature difference ${\Delta}T$ of source and growth part has nearly agreed with theoritical value $14.7^{\circ}C$and experimental value $15^{\circ}C$ Then, crystal of best quality has been grown, when temperature of tail tube has been $110^{\circ}C$, in spite of quickly pulling up crystal growth tube a degree O.38mm per hour. The grown crystal have had hexagonal structure and single crystal with c-axis to length of crystal growth tube from X- ray diffraction pattern of powder method and Laue pattern of back reflection Laue method. Also, the mobility and carrier density from Hall effect measurement have been $316cm^2/V{\cdot}sec$ and $2.90{\times}10^{16}cm^{-3}$ at the room temperature, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.4
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• pp.199-204
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• 2003

Microstructure and chemical analysis of sintered bricks containing recycled wastes were investigated by SEM and EDS. The recycled wastes for which substitute ceramic raw materials were EAF (electric arc furnace) dust, fly ash and stone ash. Yellowish and brownish regions on the surface and brownish and blackish regions in the inside of bricks were observed. Main component of yellowish region on the surface turned out to be Zn. No chemical difference between the black-core region and brownish matrix. Mullite crystallites of 1 fm size were distributed in the inside of bricks and enclosed by glass phases. It seems that alumine-silicate mixtures of kaolin and fly ash were transformed to mullite crystallites during the sintering. Relatively large pores ot several ten fm size were observed in the black-core region in the inside of bricks. The main components of the inside of brick were Al and Si. The minor components were C, Na, Mg, K, Ca, and Fe. Particularly, the precipitates of Fe-rich crystallites were observed in the amorphous matrix. These precipitates were formed due to the local reduction atmosphere in the inside of bricks. Zn-rich covers were found on the surface of bricks because Zn diffused from the inside of bricks to the surface under the reduction atmosphere.

• Clean Technology
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• v.14 no.3
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• pp.171-175
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• 2008

The effect of the addition of $Al^{3+}$ dopant on the electrochemical characteristics of $Li_{4}Ti_{5}O_{12}$ was investigated. $Li_{4}Ti_{5}O_{12}$ is known as a 2ero-strain material, and $Li_{3.95}Al_{0.15}Ti_{4.9}O_{12}$ has been manufactured by solid-state reaction with high energy ball milling (HEBM). The samples were heated at 800, 900 and $1000^{\circ}C$ in electric furnace. The structural and surface structures were measured by XRD (X-ray diffraction) and SEM (scanning electron microscopy). Cut-off voltage of charge/discharge cycles was $1.0{\sim}3.0 V$ to investigate reversible capacity, cycle stability and plateau voltage. The reversible capacity of $Li_{3.95}Al_{0.15}Ti_{4.9}O_{12}$ was 138 mAh/g.

• Korean Journal of Crystallography
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• v.7 no.1
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• pp.44-56
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• 1996

CuInTe2 synthesised in a horizontal electric furnace was found to be polycrystalline. Single crystals of CuInTe2 were grown with the vertical Bridgman technique. The structure, Hall effect of the crystals were measured in the temperature range 30 to 293K. Both the polycrystals and single crystals of CuInTe2 were tetragonal in structure. The lattice constants of the polycrytals were measured as a=6.168Å and c=12.499Å, with c/a=2.026, these of the single crystals were measured as a=6.186Å and c=12.453Å, with c/a=2.013. The growth plane of the oriented single crystals was confirmed to be a (112) plane from the back-reflection Laue patterns. The Hall effect of the CuInTe2 single crystals was measured with the method of van der Pauw The Hall data of the samples measured at room temperature showed a carrier concentration of 2.14×1023holes/m3, a conductivity of 739.58Ω-1m-1, and a mobility of 2.16×10 -2m 2/V·s for the sample perpendicular to the c-axis. Values of 1.51×1023holes/m3, 717.55Ω-1m-1, and 2.97×10-2 m2/V·s were obtained for the sample parallel to the c-axis. The Hall coefficients for the samples both perpendicular and parallel to the c-axis in the temperature range 30K to 293K were always positive values. Thus the CuInTe2 single crystal was determined to be a p-type semiconductor.

• Korean Journal of Crystallography
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• v.8 no.1
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• pp.48-58
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• 1997

[ $CuInTe_2$ ] synthesised in a horizontal electric furnace was found to be polycrystalline. Single crystals of $CuInTe_2$ were grown with the vertical Bridgman technique. The photoconductivity and photoluminescence of the crystals were measured in the temperature range 20 to 293 K. From the photocurrent peaks measured for the samples both perpendicular and parallel to c-axis, the energy band gaps of the samples were found to be 0.948 eV and 0.952 eV at room temperature respectively. The energy difference of the photocurrent and photoluminescence peaks of the samples both perpendicular and parallel to the c-axis measured at room temperature was a phonon energy, and its values were 22.12 meV and 21.4 meV respectively. The splitting of the valence band due to spin-orbit and crystal field interaction was calculated from the photocurrent spectra of the samples, The ${\Delta}cr\;and\;{\Delta}so$ are 0.046,0.014 eV respectively.

• Journal of the Korean Solar Energy Society
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• v.23 no.2
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• pp.59-70
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• 2003

A stoichiometric mixture of evaporating materials for $CuGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615{\AA}$ and $11.025{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $5.01\times10^{17}cm^{-3}$ and $245cm^2/V{\cdot}s$ at 293K. respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T)=1.7998 eV-($8.7489\times10^{-4}$ eV/K)$T^2$/(T+335K). After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU},\;V_{Se},\;Cu_{int}$ and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2$/GaAs did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Journal of Environmental Science International
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• v.11 no.10
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• pp.1109-1116
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• 2002

This study analyzed concentrations of volatile organic compounds (VOCs) produced from incineration of papers at $600^{\circ}C$. The papers used in this study included A4 papers (new, printed with ink-jet, printed with carbon), newspapers (printed with bean oil, printed with a general newspaper ink), packaging box, document envelope, single-use paper cup, and cosmetic tissue. Papers were heated from room temperature upto $600^{\circ}C$ providing air inside of the electric furnace and then they were oxidized for 80 minutes at $600^{\circ}C$ maintaining the same air supply. VOCs emitted from the incineration process were sampled using an air sampling pump and bags for 160 minutes and then the components and concentrations of the VOCs were analyzed by a CC-MS. The most prominent chemical structure of the Vous identified from incineration of the papers was furans and then furans were followed by aromatics and aliphatic alkenes. About 40% of the identified VOCs contained double bonds, which have relatively a high ozone (ground level) formation potential, within their molecular structure. Also, some cancer suspecting compounds like benzene, dichlorormethane and chloroform were identified.

• Journal of Sensor Science and Technology
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• v.24 no.6
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• pp.404-411
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• 2015

A stoichiometric mixture of evaporating materials for $BaAl_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaAl_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaAl_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.29{\times}10^{-16}cm^{-3}$ and $278cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaAl_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.4205eV-(4.3112{\times}10^{-4}eV/K)T^2/(T+232 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaAl_2Se_4$ have been estimated to be 249.4 meV and 263.4 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n =1 and $C_{31}$-exciton peaks for n=31.