• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.1
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• pp.14-18
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• 2007

The electric property in the $GaAs-Al_{x}Ga_{1-x}$ quantum well with the Si ${\delta}-doping$ layer in a non-central position is studied through the effect of the electric field intensity on the electron distribution. The finite difference method is used for the calculation of the subband energy level and its wavefunction. In order to account for the change of the potential energy due to the charged particles, the self consistent method is employed. As the Si ${\delta}-doping$ layer becomes closer to the heterojunction interface, the electrons less affected by Coulomb scattering are greatly increased under the external electric field. Therefore, the high speed device is suggested due to the fact that the high mobility electrons can be increased by positioning the ${\delta}-doping$ layer in the quantum well and by applying the electric field intensity.

• Journal of Sensor Science and Technology
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• v.31 no.2
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• pp.120-124
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• 2022

With advancements in underwater stealth technology for naval vessels, new sensor configurations for detecting targets have been attracting increased attention. Latest underwater mines adopt multiple sensor configurations that include electric field sensors to detect targets and to help acquire accurate ignition time. An underwater electric field sensor consists of a pair of electrodes, signal processing unit, and preamplifier. For detecting underwater electric fields, the preamplifier requires low-noise amplification at ultra-low frequency bands. In this paper, the specific requirements for low-noise preamplifiers are discussed along with the experimental results of various setups of matched transistors and chopper stabilized operational amplifiers. The results showed that noise characteristics at ultra-low frequency bands were affected significantly by the voltage noise density of the chopper amplifier and the number of matched transistors used for differential amplification. The fabricated preamplifier was operated within normal design parameters, which was verified by testing its gain, phase, and linearity.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.4
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• pp.590-594
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• 2012

ZnO nanowires were fabricated by hydrothermal synthesis technique for field emission device application. Al-doped zinc oxide (AZO) thin films were prepared as seed layer of catalyst for the ZnO nanowire synthesis, for which conductivity of the seed layer was tried to be improved for enhancing the field emission property of the ZnO nanowire. The AZO seed layer revealed specific resistivity of $ 7.466{\times}10^{-4}[{\Omega}{\cdot}cm]$ and carrier mobility of 18.6[$cm^2$/Vs]. Additionally, upper tip of the prepared ZnO nanowires was treated by hydrochloric acid (HCl) to form a nanocone shape of ZnO nanowire, which was aimed for enhanced focusing of electric field on that and resultingly to improve field emission property of the ZnO nanowires. The ZnO nanowire with nanocone shape revealed decreased threshold electric field and increased current density than those of the simple ZnO nanowires.

• The Journal of the Korea Contents Association
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• v.14 no.9
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• pp.582-588
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• 2014

The purpose of this study is to analyze how a joint research network between countries affects the diffusion of technology information and how much countries with high centrality on the network accept new technology and to seek their meaning. With this aim, the joint research network density between countries by year and the number of participating countries were measured using thesis information regarding the secondary battery field and the electric vehicle field, and a regression analysis of relevant variables was conducted. As a result of the analysis, the greater the joint research network density in the secondary battery field, the higher the number of participating countries in a linear relationship. Also, on the joint research network, countries with high degree centrality were discovered to have led development in the mid to large size secondary battery field. Meanwhile, for the electric vehicle field, although there appeared no increase in the network density value, the number of participating countries was found to have increased. This was analyzed that joint research between countries was not a necessary and sufficient condition although it played a crucial role in promoting technology diffusion. Such a result is meaningful in that it verified promoting factors for essential technology diffusion statistically; however, with this research, there exist limitations that the index of a central role on the network was measured only with degree centrality and that only the relationship between two players was measured for network density in interactions between players. Accordingly, it is necessary to carry out research into a method to measure interactions among multiple researchers in the future.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.1041-1046
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• 2003

In order to improve the surface uniformity and the conduction properties of the fabricated YBCO thick films, a system that applies alternating field vertically to the EPD field has been developed for the first time and applied to the electrophoretic deposition process. The applied alternating electric field, so called Shaky Alternating Assisted Field, caused a force to be exerted on each YBCO particle and resulted in a shaking of the particle in the direction of applied electric field, accomplishing a uniform particle orientation. The usual commercial electrical power was used for the vertically applied alternating voltage and the induced electric field was 25-120 V/cm at 60Hz. The thick film fabricated by the method developed in this paper showed better surface uniformity without crack and porosity and improved film characteristics such as critical temperature (Tc,zero = 90 K) and critical current density (2354 A/$\textrm{cm}^2$), Therefore, it is expected that the shaky-aligned electrophoretic deposition method can be used to fabricate superconductor films through a simpler process and at less expense.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.241-241
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• 2009

For the Radio Frequency Integrated Passive Device (RFIPD) application, we have successfully developed and characterized high break-down voltage metal-insulator-metal (MIM) capacitors with 2,000 ${\AA}$ plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which deposited with $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $250^{\circ}C$ chamber temperature. At the PECVD process condition of gas mixing rate (0.957), working pressure (0.9 Torr), and RF power (60 W), the AFM RMS value of about 2,000 ${\AA}$ silicon nitride on the bottom metal was the lowest of 0.862 nm and break-down electric field was the highest of about 8.0 MV/cm with the capacitance density of 326.5 $pF/mm^2$.

• The KSFM Journal of Fluid Machinery
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• v.15 no.1
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• pp.27-35
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• 2012

A numerical simulation for particle collection efficiency in a wire-plate electrostatic precipitator (ESP) has been performed. Method of characteristics and finite differencing method (MOC-FDM) were employed to obtain electric field and space charge density, and lattice boltzmann method (LBM) was used to predict the Electrohydrodynamic (EHD) flow according to the ion convection. Large eddy simulation (LES) was considered for turbulent flow and particle simulation was performed by discrete element method (DEM) which considered field charging, electric force, drag force and wall-collision. One way coupling from FDM to LBM was used with small and low density particle assumption. When the charged particle collided with the collecting plate, particle-wall collision was calculated for re-entertainment effect and the effect of gravity force was considered.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.508-509
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• 2005

In case of ITO/MEH-PPV/Al structure, the quantity of charge carriers flowing through the organic material was few and the density of them is fixed. The electric field inside of the device almost didn't change with the position. On the other hands, in case of Au/MEH-PPV/Au structure, the hole density increased rapidly nearby the anode but decreased nearby the cathode. The space charge phenomenon followed sufficient hole injection resulted in the change of the electric field with the position inside of the device. We verified that the result of the current-voltage simulation corresponded with experimental result.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1609-1611
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• 1994

In ECR and helicon reactors for plasma processing, a high density plasma is generated in a source region which is connected to a diffusion region where the processing takes place. Large density and potential gradients can develop at the orifice of the source which drive ion currents into the diffusion region. The average ion velocity may become the order of the sound velocity. Measurements of the ion saturation current to a Langmuir probe are used as a standard method of determining the plasma density in laboratory discharges. However, the analysis becomes difficult in a steaming plasma. We have used the HAMLET plasma simulator to simulate the ion flow to a large langmuir probe in an ECR plasma. The collection surface was aligned with the Held upstream, normal to the field, and downstream. ion trajectories through the electric and magnetic fields were calculated including ion-neutral collisions. We examines the ratio of ion current density to plasma density as a function of magnetic field and pressure.

• Journal of the Korean Society for Precision Engineering
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• v.7 no.2
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• pp.14-27
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• 1990

Electromagnetic Pulse Forming is the one of the high velocity forming method. When the electric energy which is charged in the capacitor bank is suddenly discharged into the electromagnetic coil, the high magnetic field occurs at the airgap between the electromagnetic coil and workpiece. Thus we can obtain the high electromagnetic pressure, which is proportional to the square of magnetic flux density. This is the basic principle of the electromagnetic pulse forming. In this paper, the equivalent L-R-C circuit is derived by computing the magnetic field and its loss of the total system. Thus, the values of the magnetic flux density and pressure can be obtained from the equation of this circuit. As a result, the computed and measured values of the maximum magnetic flux density and pressure are compared and the characteristics of the tapered field shaper are further discussed as follows; 1) The strength of magnetic flux density and pressure can be controlled by the charged energy and the size of the airgap between the inner field shaper and the workpiece. 2) During the design of the tapered field shaper, the penetration of the magnetic flux through the sharp edge should be considered.