• 제목/요약/키워드: Electric Potential Continuity

검색결과 7건 처리시간 0.021초

3차원 와전류문제의 유한요소해석에서 쿨롱게이지조건과 전류연속조건의 영향 (Effects of Coulomb Gauge Condition and Current Continuity Condition on 3-Dimensional FE Analysis for Eddy Current Problems)

  • 이향범
    • 대한전기학회논문지:전기기기및에너지변환시스템부문B
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    • 제54권10호
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    • pp.483-491
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    • 2005
  • To solve the 3D eddy current problems by using FE(finite element) method with MVP(magnetic vector potential) and electric scalar potential, Coulomb gauge condition and current continuity condition have to be considered. Coulomb gauge condition enforced on existing FE formulations to insure the uniqueness of MVP looks unnatural and current continuity condition which can be driven from Ampere's law looks unnecessary. So in this paper the effect of two conditions on FE formulations are investigated in order to help to obtain accurate numerical simulation results.

메타표면 반사계수 계산을 위한 정사각형 패치의 전기 분극률 계산 (Calculation of Electric Polarizability of Square Patch for Calculating Reflection Coefficient of Metasurface)

  • 이선규;이정해
    • 한국전자파학회논문지
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    • 제29권8호
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    • pp.594-598
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    • 2018
  • 메타표면에 가장 많이 이용되는 전기적으로 작은 크기를 갖는 정사각형 패치에 전위 연속성을 이용하여 접선방향 전기 분극률을 계산 방법을 제안하였다. 패치의 경우, 중심에 위치한 등가 전기 쌍극자에 의한 패치 표면에서의 전위가 균일하지 않기 때문에, 분극률이 한 개의 값으로 정의되지 않는 문제가 있었다. 이를 해결하기 위하여 패치 표면을 메쉬로 나누고, 각 점에서 얻어진 분극률을 평균함으로써 등가 분극률을 계산하였다. 제안된 방법, 기존의 멱급수 3차항 근사식, 실험식의 결과를 비교하여 잘 일치함을 보였다. 제안된 방법으로 구해진 분극률을 generalized sheet transition conditions(GSTCs)에 적용하여 계산된 메타표면의 반사계수의 크기와 위상이 ANSYS HFSS(high-frequency structure simulator) 모의실험 결과와 잘 일치함을 보였다.

Effects of Electrohydrodynamic Flow and Turbulent Diffusion on Collection Efficiency of an Electrostatic Precipitator with Cavity Walls

  • 박석주;박영옥;김상수
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2001년도 춘계학술대회논문집D
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    • pp.97-103
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    • 2001
  • The effects of the electrohydrodynamic (EHD) flow and turbulent diffusion on the collection efficiency of a model ESP composed of the plates with a cavity were studied through numerical computation. The electric field and ion space charge density were calculated by the Poisson equation of the electrical potential and the current continuity equation. The EHD flow field was solved by the continuity and momentum equations of the gas phase including the electrical body force induced by the movement of ions under the electric field. The RNG $k-{\varepsilon}$ model was used to analyze the turbulent flow. The particle concentration distribution was calculated from the convective diffusion equation of the particle phase. As the ion space charge increased, the particulate collection efficiency increased because the electrical potential increased over the entire domain in the ESP. The collection efficiency decreased and then increased, i.e. had a minimum value, as the EHD circulating flow became stronger when the electrical migration velocity of the charged particle was low. However, the collection efficiency decreased with the stronger EHD flow when the electrical migration of the particle was higher relatively. The collection efficiency of the model ESP increased as the turbulent diffusivity of the particle increased when the electrical migration velocity of the particle was low. However, the collection efficiency decreased for increasing the turbulent diffusivity when the electrical migration of the particle was higher relatively.

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n-MOSFET 정전기 방전 분석 (Electrostatic Discharge Analysis of n-MOSFET)

  • 차영호;권태하;최혁환
    • 한국전기전자재료학회논문지
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    • 제11권8호
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    • pp.587-595
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    • 1998
  • Transient thermal analysis simulations are carried out using a modeling program to understand the human body model HBM ESD. The devices were simulated a one-dimensional device subjected to ESD stress by solving Poison's equation, the continuity equation, and heat flow equation. A ramp rise with peak ESD voltage during rise time is applied to the device under test and then discharged exponentially through the device. LDD and NMOS structures were studied to evaluate ESD performance, snap back voltages, device heating. Junction heating results in the necessity for increased electron concentration in the space charge region to carry the current by the ESD HBM circuit. The doping profile adihacent to junction determines the amount of charge density and magnitude of the electric field, potential drop, and device heating. Shallow slopes of LDD tend to collect the negative charge and higher potential drops and device heating.

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Analytical free vibration solution for angle-ply piezolaminated plate under cylindrical bending: A piezo-elasticity approach

  • Singh, Agyapal;Kumari, Poonam
    • Advances in Computational Design
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    • 제5권1호
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    • pp.55-89
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    • 2020
  • For the first time, an accurate analytical solution, based on coupled three-dimensional (3D) piezoelasticity equations, is presented for free vibration analysis of the angle-ply elastic and piezoelectric flat laminated panels under arbitrary boundary conditions. The present analytical solution is applicable to composite, sandwich and hybrid panels having arbitrary angle-ply lay-up, material properties, and boundary conditions. The modified Hamiltons principle approach has been applied to derive the weak form of governing equations where stresses, displacements, electric potential, and electric displacement field variables are considered as primary variables. Thereafter, multi-term multi-field extended Kantorovich approach (MMEKM) is employed to transform the governing equation into two sets of algebraic-ordinary differential equations (ODEs), one along in-plane (x) and other along the thickness (z) direction, respectively. These ODEs are solved in closed-form manner, which ensures the same order of accuracy for all the variables (stresses, displacements, and electric variables) by satisfying the boundary and continuity equations in exact manners. A robust algorithm is developed for extracting the natural frequencies and mode shapes. The numerical results are reported for various configurations such as elastic panels, sandwich panels and piezoelectric panels under different sets of boundary conditions. The effect of ply-angle and thickness to span ratio (s) on the dynamic behavior of the panels are also investigated. The presented 3D analytical solution will be helpful in the assessment of various 1D theories and numerical methods.

Assessment of velocity-acceleration feedback in optimal control of smart piezoelectric beams

  • Beheshti-Aval, S.B.;Lezgy-Nazargah, M.
    • Smart Structures and Systems
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    • 제6권8호
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    • pp.921-938
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    • 2010
  • Most of studies on control of beams containing piezoelectric sensors and actuators have been based on linear quadratic regulator (LQR) with state feedback or output feedback law. The aim of this study is to develop velocity-acceleration feedback law in the optimal control of smart piezoelectric beams. A new controller which is an optimal control system with velocity-acceleration feedback is presented. In finite element modeling of the beam, the variation of mechanical displacement through the thickness is modeled by a sinus model that ensures inter-laminar continuity of shear stress at the layer interfaces as well as the boundary conditions on the upper and lower surfaces of the beam. In addition to mechanical degrees of freedom, one electric potential degree of freedom is considered for each piezoelectric element layer. The efficiency of this control strategy is evaluated by applying to an aluminum cantilever beam under different loading conditions. Numerical simulations show that this new control scheme is almost as efficient as an optimal control system with state feedback. However, inclusion of the acceleration in the control algorithm increases practical value of a system due to easier and more accurate measurement of accelerations.

2차원 N-P-N 바이폴라 트랜지스터의 수치해석-BIPOLE (Numerical Analysis of a Two-Dimensional N-P-N Bipolar Transistor-BIPOLE)

  • 이종화
    • 대한전자공학회논문지
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    • 제21권2호
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    • pp.71-82
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    • 1984
  • 2차원 n-p-n 바이폴라 트랜지스터의 수치해석을 위한 프로그램(BIPOLE)을 개발하였다. 이 프로그램은 SRH와 Auger 재결합 기구들과 불순물 농도와 전계강도에 대한 운송자 이동도의 의존성과 밴드 갭 축소 효과들을 포함하고 있다. Poisson 방정식에는 Newton법을 또 정공과 전자의 연속 방정식에는 발산이론을 이용하여 여러가지 물리적인 제한없이 기본 반도체 방정식들에 대한 유한차분 공식들을 만들었다. 선형화된 방정식들의 계수 행렬은 희소 대칭 M 행렬이었는데 그 해를 구하기 위해 ICCG법과 Gummel의 알고리즘을 적용하였다. 이 프로그램 BIPOLE를 n-p-n 트랜지스터의 여러가지 정상 상태 문제에 적용시켰다. 그 응용의 보기로서 공통 에미터 전류이득의 변화, 에미터 용량에 대한 확산용량이 미치는 영향과 입출력 특성곡선들을 계산해 보았다. 전위 분포와 전자와 정공 농도분포와 같은 계산 결과를 3차원 컴퓨터 그래픽으로 도시하였다. 이 프로그램은 장차 2차원 트랜지스터의 교류 및 왜곡 현상의 수치해석의 기초로 이용될 것이며, 이 프로그램에 관심있는 모든 분들께 공급될 것이다.

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