• Title/Summary/Keyword: Effective Permittivity

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The Analysis of SAW IDT Characteristics Using Quasi-Static Approximation (준정근사계산법을 이용한 탄성표면파 변환기의 특성 해석)

  • 이동도;정영지;이재경;황금찬
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.30A no.11
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    • pp.88-98
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    • 1993
  • In this paper, the effective permittivity in the piezoelectric material is numerically obtained and greens function is derived from that. It is shown that the admittance and the transfer function of an interdigital transducer is represented by electrostatic charge distribution using Quasi-static approximation. To prove the validity of the quasi-static approximation, numerical results for the uniform IDT of a filter mounted on 128 $^{\circ}$ rotated Y-cut X-propagating Lithium Niobate are compared with the measured ones.

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Effect of Impurity Addition on the Microwave Dielectric Properties of $(Ba_{0.93}Sr_{0.07}O)-0.5Sm_2O_3-4.5TiO_2$ Ceramics ($(Ba_{0.93}Sr_{0.07}O)-0.5Sm_2O_3-4.5TiO_2$계 세라믹스의 불순물 첨가에 따른 마이크로파 유전특성)

  • Kim, Tae-Joong;Jang, Jae-Hoon;Lee, Hee-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.1148-1151
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    • 2002
  • Dielectric ceramics with nominal composition of $(Ba_{0.93}Sr_{0.07}O)-0.5Sm_2O_3-4.5TiO_2$ was prepared using the conventional mixed oxide process-derived powder. Effect of $SiO_2$, $MnO_2$ and $Al_2O_3$ impurity addition on the microwave properties was examined in some detail. Measured relative permittivity $(\varepsilon_r)$ values were in the range of 53 to 59 and showed little dependence on impurity addition. In contrast, quality factor $(Q{\cdot}f)$ and temperature coefficient of resonant frequency $(\tau_f)$ values were greatly influenced by the type and the amount of impurities. It was found that 0.1~0.2wt% addition of $Al_2O_3$ was most effective for improving the properties, where ${\varepsilon}_r$, $Q{\cdot}f$ and $\tau_f$ values were 57.7, 10000, and +7ppm/$^{\circ}C$, respectively.

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Accurate Design Method for Rectangular Microstrip Patch Antenna (정방형 마이크로스트립 패치 안테나의 정확한 설계 방식)

  • Yook, Jong-Gwan;Lee, Hong-Min;Park, Han-Kyu
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.7
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    • pp.13-20
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    • 1989
  • An accurate design method for rectangular microstrip patch antenna that can be applied to wide range of frequencies (C-band to X-band) is proposed. With due regard the frequency dependent effective dielectric permittivity to design formula, the inaccuracy of previous design formulae can be overcome. The results predicted by new procedure are compared well experimental results that had varying operation frequencies between 7GHz and 15GHz. Antennas are fabricated over microwave substrates with the same dielectric permittivity and thickness. Radiation power patterns are also measured and they well with theoretical values.

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Optimization of Tunneling FET with Suppression of Leakage Current and Improvement of Subthreshold Slope (누설전류 감소 및 Subthreshold Slope 향상을 위한 Tunneling FET 소자 최적화)

  • Yoon, Hyun-kyung;Lee, Jae-hoon;Lee, Ho-seong;Park, Jong-tae
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2013.10a
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    • pp.713-716
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    • 2013
  • The device performances of N-channel Tunneling FET have been characterized with different intrinsic length between drain and gate($L_{in}$), drain and source doping, permittivity and oxide thickness when the total effective channel length is constant. N-channel Tunneling FET of SOI structure have been used in characterization. $L_{in}$ was from 30nm to 70nm, dose concentration of drain and source were from $2{\times}10^{12}cm^{-2}$ to $2{\times}10^{15}cm^{-2}$ and from $1{\times}10^{14}cm^{-2}$ to $3{\times}10^{15}cm^{-2}$, permittivity was from 3.9 to 29, and oxide thickness was from 3nm to 9nm. The device performances were characterized by Subthreshold slope(S-slope), On/off ratio, and leakage current. From the simulation results, the leakage current have been reduced for long $L_{in}$ and low drain doping. S-slope have been reduced for high source doping, high permittivity and thin oxide thickness. With considering the leakage current and S-slope, it is desirable that are long $L_{in}$, low drain doping, high source doping, high permittivity and thin oxide thickness to optimize device performance in n-channel Tunneling FET.

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Small Epsilon Negative ZOR Antenna with Improved Bandwidth (확장된 대역폭을 갖는 소형 Epsilon Negative ZOR 안테나)

  • Ko, Seung-Tae;Park, Byung-Chul;Park, Jae-Hyun;Lee, Jeong-Hae
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.8
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    • pp.920-926
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    • 2008
  • In this paper, small epsilon negative(ENG) zeroth-order resonance(ZOR) antenna with improved bandwidth is presented. To reduce the size of ENG ZOR antenna without narrowing bandwidth, large shunt inductance is introduced by adding patterns on patch and meandered via. The effective permittivity of meandered via is less dependent of frequency than that of straight via in same size. Thus, ENG ZOR antenna with meandered via has broader bandwidth. As a result, the bandwidth of ENG ZOR antenna with meandered via is 1.38 times as broad as that of spiral ENG ZOR antenna with straight via. On the other hand, the area of ENG ZOR antenna is reduced by 64 % compared with that of conventional mushroom ZOR antenna.

A Study on the Design of the Directional Coupler using Three Layer Microstrip Substrate (세 층 마이크로스트립 유전체 기판을 이용한 방향성 결합기 설계에 관한 연구)

  • 천동완;김원기;박정훈;김상태;신철재
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.12 no.4
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    • pp.513-520
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    • 2001
  • In this paper, the directional coupler using three layer microstrip substrate is proposed and the design method is notified. Modified re-entrant mode coupler is the proposed structure that one layer is added on upper plane of coupled transmission lines and the floating conductor is placed on added layer's upper planes. This structure has high coupling for the increase of odd mode capacitance and also has good performance in VSWR, isolation, phase difference because the difference of effective permittivity is small in each mode. We have designed the coupler from the calculation of impedance, effective permittivity, coupling coefficient using even, odd mode analysis method. From the simulation and measurement, proposed coupler has about 2 dB more tighter coupling than conventional coupler and also has good performance in VSWR, isolation, phase difference.

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Resonance Characteristics of THz Metamaterials Based on a Drude Metal with Finite Permittivity

  • Jun, Seung Won;Ahn, Yeong Hwan
    • Current Optics and Photonics
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    • v.2 no.4
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    • pp.378-382
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    • 2018
  • In most previous investigations of plasmonic and metamaterial applications, the metallic film has been regarded as a perfect electrical conductor. Here we demonstrate the resonance characteristics of THz metamaterials fabricated from metal film that has a finite dielectric constant, using finite-difference time-domain simulations. We found strong redshift and spectral broadening of the resonance as we decrease the metal's plasma frequency in the Drude free-electron model. The frequency shift can be attributed to the effective thinning of the metal film, originating from the increase in penetration depth as the plasma frequency decreases. On the contrary, only peak broadening occurs with an increase in the scattering rate. The metal-thickness dependence confirms that the redshift and spectral broadening occur when the effective metal thickness drops below the skin-depth limit. The electromagnetic field distribution illustrates the reduced field enhancement and reduced funneling effects near the gap area in the case of low plasma frequency, which is associated with reduced charge density in the metal film.

Novel Planar Metamaterial with a Negative Refractive Index

  • Kim, Dong-Ho;Choi, Jae-Ick
    • ETRI Journal
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    • v.31 no.2
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    • pp.225-227
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    • 2009
  • A new planar metamaterial (MTM) with simultaneous negative values of permittivity (${\varepsilon}$) and permeability (${\mu}$) is proposed. Our MTM is composed of two identical copper patterns etched on both sides of dielectric laminate, which is very thin and easy to fabricate. Unlike conventional MTMs, the proposed structure shows a negative refractive index (NRI) behavior with respect to a normally incident wave. To explain the underlying principle of the NRI characteristics, an equivalent resonant circuit model based on surface current density distribution is investigated. An eigenmode analysis and a three-dimensional wave simulation for the stacked MTM prism are also performed to verify the existence of negative refraction. The experimental results from the transmission and reflection measurement ensure the validity of our design approach and show good agreement with the theoretically predicted effective medium parameters.

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Analysis Method of Transmission Characterization for Multi-layered Composite Material Based on Homogenization Method

  • Hyun, Se-Young;Song, Yong-Ha;Jeoun, Young-Mi;Kim, Bong-Gyu
    • Journal of Aerospace System Engineering
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    • v.15 no.6
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    • pp.59-65
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    • 2021
  • In this paper, the transmission characteristics of the multi-layered composite material with wire mesh and honeycomb core for aircraft applications have been analyzed with the proposed method. The proposed method converts the conductive wire mesh into effective layer, while for the dielectric honeycomb core, effective permittivity has been derived based on volume fraction with the proposed method. The proposed method has been verified through comparison with full-wave simulation and revealed excellent. In addition, the calculation time of the proposed method is a few order of magnitude faster in comparison with the full-wave simulation.

A Novel Epsilon Near Zero Tunneling Circuit Using Double-Ridge Rectangular Waveguide

  • Kim, Byung-Mun;Son, Hyeok-Woo;Hong, Jae-Pyo;Cho, Young-Ki
    • Journal of electromagnetic engineering and science
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    • v.14 no.1
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    • pp.36-42
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    • 2014
  • In this paper, an epsilon near zero (ENZ) tunneling circuit using a double-ridge rectangular waveguide (RWG) is proposed for the miniaturization of a waveguide component. The proposed ENZ channel and is located in the middle of the input-output RWG (IORWG). The ratio of the height to the width of the channel waveguide is very small compared to the IORWG. By properly adjusting the ridge dimensions, the tunneling frequency of the proposed ENZ channel can be lowered to near the cut-off frequency of the IORWG. For the proposed ENZ tunneling circuit, the approach adopted for extracting the effective permittivity, effective permeability;normalized effective wave impedance, and propagation constant from the simulated scattering parameters was explained. The extracted parameters verified that the proposed channel is an ENZ channel and electromagnetic energy is tunneling through the channel. Simulation and measurement results of the fabricated ENZ channel structure agreed.