• Title/Summary/Keyword: Edge Diffraction

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Study of The Unsteady Weak Shock Propagating through a Pipe Bend (곡관 내부를 전파하는 약한 비정상 충격파에 관한 연구)

  • Kim, H.S.;Kim, H.D.
    • Proceedings of the KSME Conference
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    • 2001.11b
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    • pp.456-461
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    • 2001
  • This paper depicts the weak shock wave propagating inside some kinds of pipe bends. Computational work is to solve the two-dimensional, compressible, unsteady Euler Equations. The second-order TVD scheme is employed to discretize the governing equations. For the computations, the incident normal shock wave is assumed at the entrance of the pipe bend, and its Mach number is changed between 1.1 and 1.7. The turning angle and radius of the curvature of the pipe bend are changed to investigate the effects on the shock wave structure. The present computational results clearly show the shock wave reflection and diffraction occurring in the pipe bend. In particular, the vortex generation, which occurs at the edge of the bend, and its shedding mechanism are discussed in details.

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Analysis of a Shaped Dual Offset Reflector Antenna-I : Subreflector Analysis (수정곡면 옵셉 복 반사판 안테나의 복사특성 해석-I : 부반사판 해석)

  • 임규태;이상설
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.9
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    • pp.106-113
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    • 1995
  • The radiation characteristics of the subreflector of a shaped dual offset reflector antenna are analyzed by the uniform theory of diffraction(UTD). The discrete shaped subreflector profile is transformed into an analytic function by the global interpolation. To obtain the first and the second derivative terms on the surface, the local interpolation method is used. The reflection point needed for the geometrical optics(GO) is found by using the multi-dimensional function minimizing algorithm. The radiation pattern of a Gregorian type shaped subreflector is presented. The characteristics of the radiation patterns for various feed edge taperings and frequencies are examined.

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Synthesis and Characterization of Metal (Pt, Pd and Fe)-graphene Composites

  • Chen, Ming-Liang;Park, Chong-Yeon;Choi, Jong-Geun;Oh, Won-Chun
    • Journal of the Korean Ceramic Society
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    • v.48 no.2
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    • pp.147-151
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    • 2011
  • In this study, we prepared graphene by using the modified Hummers-Offeman method and then introduced the metals (Pt, Pd and Fe) for dispersion on the surface of the graphene for synthesis of metal-graphene composites. The characterization of the prepared graphene and metal-graphene composites was performed by X-ray diffraction (XRD), scanning electron microscopy (SEM) with energy dispersive X-ray (EDX) analysis and transmission electron microscopy (TEM). According to the results, it can be observed that the prepared graphene consists of thin stacked flakes of shapes having a well-defined multilayered structure at the edge. And the metal particles are dispersed uniformly on the surface of the graphene with an average particle size of 20 nm.

Investigation of the Annealing Time Effects on the Properties of Sputtered ZnO:Al Thin Films

  • Kim, Deok Kyu;Kim, Hong Bae
    • Applied Science and Convergence Technology
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    • v.23 no.6
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    • pp.366-370
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    • 2014
  • ZnO:Al transparent conductive films were deposited on glass substrates by RF magnetron sputtering technique and annealed by rapid thermal annealing system. The influence of annealing time on the structural, electrical, and optical properties of ZnO:Al thin films was investigated by atomic force microscopy, X-ray diffraction, Hall method and optical transmission spectroscopy. As the annealing time increases from 0 to 5 min, the crystallinity is improved, the root main square surface roughness is decreased and the sheet resistance is decreased. The lowest sheet resistance of ZnO:Al thin film is 90 ohm/sq. The reduction of sheet resistance is caused by increasing carrier concentration due to substituent Al ion. All films are transparent up to 80% in the visible wavelength range and the adsorption edge is a blue-shift due to Burstein-Moss effect with increasing annealing time.

Properties of ZnO:Ga thin films deposited by RF magnetron sputtering under various RF power

  • Kim, Deok Kyu;Kim, Hong Bae
    • Applied Science and Convergence Technology
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    • v.24 no.6
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    • pp.242-244
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    • 2015
  • ZnO:Ga thin films were deposited by RF magnetron sputtering technique from ZnO (3 wt.% $Ga_2O_3$) target onto glass substrates under various RF power. The influence of RF power on the structural, electrical, and optical properties of ZnO:Ga thin films was investigated by X-ray diffraction, atomic force microscopy, Hall method and optical transmission spectroscopy. As the RF power increases from 50 to 110W, the crystallinity is deteriorated, the root main square surface roughness is decreased and the sheet resistance is increased. The increase of sheet resistance is caused by decreasing carrier concentration due to interstitial Ga ion. All films are transparent up to 80% in the visible wavelength range and the adsorption edge is a red-shift with increasing RF power.

Structural and Opical Properties of ZnO Thin Films with Different Temperature of Sol-gel Solution (Sol-gel 용액의 온도변화에 따른 ZnO 박막의 구조적, 광학적 특성)

  • Park, Hyeong-Gil;Nam, Gi-Ung;Yun, Hyeon-Sik;Kim, So-A-Ram;Im, Jae-Yeong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.11a
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    • pp.137-138
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    • 2012
  • ZnO 박막을 Sol-gel용액을 이용한 스핀코팅 방법으로 석영기판 위에 성장하였고 Sol-gel 용액의 온도 변화에 따른 구조적, 광학적 특성을 분석하였다. ZnO 박막의 구조적, 광학적 특성을 조사하기 위해 field-emission scanning electron microscopy, X-ray diffraction (XRD), photoluminescence (PL), 그리고 ultraviolet-visible (UV) spectroscopy을 사용하였다. PL 분석에서 ZnO 박막은 orange 계열의 발광을 하였으며, PL spectra는 3.3 eV 부근의 near-band edge emission (NBE) 피크와 2.0 eV 부근의 deep-level emission (DLE) 피크로 이루어져있다. 모든 sol-gel 용액 온도에서, DLE 피크가 NBE 피크보다 더 우세하고 이 DLE 피크는 sol-gel 용액의 온도가 증가함에 따라 점점 증가하다가 감소하는 것을 알 수 있다. 이런 DLE 피크는 산소 공공, 아연 공공, 침입형 산소, 침입형 아연 등과 같은 결함에 의한 것이며, ZnO 박막은 sol-gel 용액의 온도에 따라 결함의 특성이 변화하였다.

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Design and Analysis of Diffractive Grating Imprinted Light-guide Plate for LCD Illumination

  • Choi, Hwan-Young;Park, Young-Pil
    • Journal of Information Display
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    • v.5 no.1
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    • pp.7-15
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    • 2004
  • A highly simplified backlight unit mainly composed of diffractive grating in sub-micron order imprinted light-guide plate (LGP) is proposed for edge-lit backlight unit. Optical characteristics of the imprinted LGP are examined by RCWA and the performance is verified through Monte Carlo simulation. Results show that the diffraction efficiency, luminous flux and its uniformity over the area are significantly affected by the angle of incident ray. Consequently couples of design considerations are additionally proposed to enhance luminous flux. In terms of peak luminance and out-coupling luminous flux, the experimental results are agreed well with the performance simulation. Finally, compared with optical characteristics of conventional backlight unit, we could conclude that the proposed simplified backlight unit made of diffractive grating imprinted light-guide plate is a good substitute for the conventional backlight unit.

A Study on the chemical-mechanical polishing process of Sapphire Wafers for GaN thin film growth. (사파이어웨이퍼의 기계-화학적인 연마 가공특성에 관한 연구)

  • Nam, Jung-Hwan;Hwang, Sung-Won;Shin, Gwi-Su;Kim, Keun-Joo;Suh, Nam-Sup
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05b
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    • pp.31-34
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    • 2003
  • The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by chemical and mechanical polishing(CMP) process. The sapphire crystalline wafers were characterized by double crystal X-ray diffraction. The sample quality of sapphire crystalline wafer at surfaces has a full width at half maximum 89 arcses. The surfaces of sapphire wafers were mechanically affected by residual stress and surface default. Sapphire wafers's waveness has higher abrasion rate in the edge of the wafer than its center due to Newton's Ring interference.

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On the Fast Convergent Solution for Diffraction by a Strip Grating with a Grounded Dielectric Layer (접지된 유전체층 위에 위치한 스트립 격자구조의 회절에 대한 급속한 수렴해에 관한 연구)

  • 조진균;이상훈;조영기
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.28A no.9
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    • pp.680-684
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    • 1991
  • The scattering problem of a transverse electric (TE) plane wave by strip grating with a dielectric slab over a ground plane is analyzed by the method of moments. By use of equivalence principle, surface magnetic current density on the shorted slot is expanded in a series of Chebyshev polynomial a satisfying the appropriate edge condition. Numerical results for reflection coefficient are obtained and compared with other available results. Our numerical results obtained from the present method are in good agreement with other result available in the literature.

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Chemo-Mechanical Polishing Process of Sapphire Wafers for GaN Semiconductor Thin Film Growth (사파이어 웨이퍼의 기계-화학적인 연마 가공특성에 관한 연구)

  • 신귀수;황성원;서남섭;김근주
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.28 no.1
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    • pp.85-91
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    • 2004
  • The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by chemical and mechanical polishing process. The sapphire crystalline wafers were characterized by double crystal X-ray diffraction. The sample quality of sapphire crystalline wafer at surfaces has a full width at half maximum of 89 arcsec. The surfaces of sapphire wafer were mechanically affected by residual stress during the polishing process. The wave pattern of optical interference of sapphire wafer implies higher abrasion rate in the edge of the wafer than its center from the Newton's ring.