• Title/Summary/Keyword: Ecr

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Preliminary Design of ECR Ion Thruster (ECR 방식 이온추력기 기본 설계)

  • Kim, Su-Kyum;Yu, Myoung-Jong;Choi, Seung-Woon
    • Aerospace Engineering and Technology
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    • v.9 no.2
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    • pp.14-21
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    • 2010
  • Ion thruster is a kind of electrostatic thruster that use electrostatic field in order to accelerate ionized propellant. Ion thruster have characteristics of small thrust but very high specific impulse among the electric thrusters. High specific impulse can reduce propellant consumption significantly. So, ion thruster have advantage for long time and long distance mission. Recently, plans for space exploration is increasing gradually not only at traditional forward countries for space like USA, Russia and Europe, but also other countries like Japan, China and India. Exploration for superior planets and asteroids the propellant ratio can go up to about 99% when chemical propulsion is used as a cruising thruster. Therefore, latest space exploration vehicles use the ion thruster as main thruster for del-V burn and use monopropellant thrusters for attitude control. In this paper, the development process of preliminary ECR ion thruster and the ECR discharge test results will be presented.

Identification of an Enhancer Critical for the ephirn-A5 Gene Expression in the Posterior Region of the Mesencephalon

  • Park, Eunjeong;Noh, Hyuna;Park, Soochul
    • Molecules and Cells
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    • v.40 no.6
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    • pp.426-433
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    • 2017
  • Ephrin-A5 has been implicated in the regulation of brain morphogenesis and axon pathfinding. In this study, we used bacterial homologous recombination to express a LacZ reporter in various ephrin-A5 BAC clones to identify elements that regulate ephrin-A5 gene expression during mesencephalon development. We found that there is mesencephalon-specific enhancer activity localized to a specific +25.0 kb to +30.5 kb genomic region in the first intron of ephrin-A5. Further comparative genomic analysis indicated that two evolutionary conserved regions, ECR1 and ECR2, were present within this 5.5 kb region. Deletion of ECR1 from the enhancer resulted in disrupted mesencephalon-specific enhancer activity in transgenic embryos. We also found a consensus binding site for basic helix-loop-helix (bHLH) transcription factors (TFs) in a highly conserved region at the 3'-end of ECR1. We further demonstrated that specific deletion of the bHLH TF binding site abrogated the mesencephalon-specific enhancer activity in transgenic embryos. Finally, both electrophoretic mobility shift assay and luciferase-based transactivation assay revealed that the transcription factor Ascl1 bound the bHLH consensus binding site in the mesencephalon-specific ephrin-A5 enhancer in vitro. Together, these results suggest that the bHLH TF binding site in ECR1 is involved in the positive regulation of ephrin-A5 gene expression during the development of the mesencephalon.

Research of Efficacy of Curculiginis Rhizoma aquaous extract on collagen induced arthritis (선모(仙茅) 열수(熱水) 추출물의 Collagen 유발 관절염에 대한 약리 효능 연구)

  • Seo, Bu Il;Roh, Seong Soo;Park, Ji Ha;Park, Chan Ik;Koo, Jin Suk
    • The Korea Journal of Herbology
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    • v.31 no.4
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    • pp.1-10
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    • 2016
  • Objectives: In Korean medicine, Curculiginis Rhizoma was treated for arthritis in remedy. But efficacy of Curculiginis Rhizoma on collagen induced arthritis was not revealed.Methods: Anti inflammatory effect of Curculiginis Rhizoma was researched in vitro with RAW264.7 cell and cell toxicity, levels of proinflammatory cytokines (TNF-α, IL-1β, IL-6 and IL-12) and PGE2 were analyzed by ELISA assay. Inflammatory protein were analyzed by western blotting assay (JNK, ERK, COX-2, TNF-α and IL-1β). In vivo, collagen induced arthritis mice model was used to evaluate anti-inflammation effect through arthritis index, immune cell number and cytokine levels (TNF-α, IL-6 and IL-1β) in serum.Results: ECR(Extract of Curculiginis Rhizoma) has not shown cell toxicity in 200 ㎍/㎖ on RAW264.7 cell. ECR suppressed releases of NO, TNF-α, IL-1β, IL-6, IL-12 and PGE2 on RAW264.7 cell treated with lipopolysacharide (1 ㎍/㎖). And ECR inhibited regulation of TNF-α, IL-1β and IL-6 mRNA, reduced protein release of JNK, ERK, iNOS, COX-2, IL-1β and TNF-α. AI of group treated with ECR 200 ㎎/㎏ and 100 ㎎/㎏ were significantly decreased compared to vihicle arthritis mice, the number of immune cell in foot joint was increased on control mice but those of group treated with ECR 200 ㎎/㎏ and 100 ㎎/㎏ were significantly reduced. This results correspond with contens of cytokines (TNF-α, IL-1β and IL-6) in serum.Conclusions: Curculiginis Rhizoma has anti-inflammation effect on RAW264.7 cell in vitro and collagen induced arthritis in vivo. So it is necessary to research more mechanism for cascade imfact.

Effect of Substrate Bias Voltage on DLC Films Prepared by ECR-PECVD (ECR-PECVD 방법으로 제작된 DLC 박막의 기판 Bias 전압 효과)

  • 손영호;정우철;정재인;박노길;김인수;김기홍;배인호
    • Journal of the Korean Vacuum Society
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    • v.9 no.4
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    • pp.328-334
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    • 2000
  • DLC (Diamond-Like Carbon) films were deposited by ECR-PECVD (electron cyclotron resonance plasma-enhanced chemical vapor deposition) method with the variation of substrate bias voltage under the others are constant except it. We have investigated the ion bombardment effect induced by the substrate bias voltage on films during the deposition of film. The characteristics of the film were analyzed using the Dektak surface profiler, SEM, FTIR spectroscopy, Raman spectroscopy and Nano Indentation tester. FTIR spectroscopy analysis shows that the amount of dehydrogenation in films was increased with the increase of substrate bias voltage and films thickness was decreased. Raman scattering analysis shows that integrated intensity ratio $(I_D /I_G)$ of the D and G peak was increased as the substrate bias voltage increased, and films hardness was increased. From these results, it can be concluded that films deposited at this experimental have the enhanced characteristics of DLC because of the ion bombardment effect on films during the deposition of film.

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A Study on the Fabrication of Perovskite (Pb, La)$\textrm{TiO}_3$ Thin Films by ECR PECVD (ECR PECVD법에 의한 페로브스카이트상(Pb, La)$\textrm{TiO}_3$ 박막 증착 연구)

  • Jeong, Seong-Ung;Park, Hye-Ryeon;Lee, Won-Jong
    • Korean Journal of Materials Research
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    • v.7 no.1
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    • pp.33-39
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    • 1997
  • Single phase pero~~skite lead lanthanum titanate thin films were fabricated on $Pt/Ti/SiO_2/Si$ substrates at the temperature of $480^{\circ}C$ by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR PECVD) using metal organic sources $Pb(DPM)_2$ pre-flowing treatment in ECIi oxygen plasma before fabricating PLT films 11romote the perovskite nucleation due to stable supplying of the $Pb(DPM)_2$ and providing the F'h-rich atmosphere in the early stage of deposition. $Pb(DPM)_2$ pie-flonring treatment enhanced the properties of PLT films. The charactcristics of the PLT filrris were investigated as a tunction of the flow rate of Ti-source. The PL'i' films were grown in a perovskite structure tvith (100) preferred orientation. The high X-ray diffraction intensity and dielectric constant were obtained from the stoichiometric perovskite $(Pb,La)TiO_3$.

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Visible Photoluminescence from Hydrogenated Amorphous Silicon Substrates by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PECVD로 증착한 a-Si : H/Si으로 부터의 가시 PHotoluminescence)

  • Shim, Cheon-Man;Jung, Dong-Geun;Lee, Ju-Hyeon
    • Korean Journal of Materials Research
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    • v.8 no.4
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    • pp.359-361
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    • 1998
  • Visible photoluminescence(PU was observed from hydrogenated amorphous silicon deposited on silicon(a-Si : H/Si) using electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR- PECVD) with silane ($SiH_{4}$) gas as the reactant source. The PL spectra from a-Si : H/Si were very similar to those from porous silicon. Hydrogen contents of samples annealed under oxygen atmosphere for 2minutes at $500^{\circ}C$ by rapid thermal annealing were reduced to 1~2%, and the samples did not show visible PL, indicating that hydrogen has a very important role in the PL process of a- Si : H/Si. As the thickness of deposited a-Si : H film increased, PL intensity decreased. The visi¬ble PL from a-Si: H deposited on Si by ECR-PECVD with $SiH_{4}$ . is suggested to be from silicon hydrides formed at the interface between the Si substrate and the deposited a-Si : H film during the deposition.

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A Study of the usage of Corrugated Fiberboard Cartons for Domestic Fresh Produce and Their Physical Properties: Focused on a Gyeongsan City, North Gyeongsan Province (국내 신선 농산물 포장용 골판지 상자의 이용 실태 및 물리적 특성 연구: 경북 경산 소재 지역 중심으로)

  • Kim, Minhwi;Lee, Myungho;Boonsiriwit, Athip;Lee, Youn Suk
    • KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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    • v.28 no.1
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    • pp.55-66
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    • 2022
  • In this study, forty corrugated fiberboard (CF) boxes for fresh produce were collected from farms located in Gyeongsan city and evaluated its characterizations and physical properties according to Korean Standard (KS). The basis weight, flute, and paperboard combination were determined for the characterizations of CF boxes. The measured basis weights of all samples were within the tolerance limit referred to KS and the flutes were B/F, EB/F, and AB/F flute, respectively. The bursting strength (BS), edgewise crush resistance (ECR), and compression strength (CS) were tested to evaluate the physical properties. There are four single-walled (SW) CF boxes showed BS and ECR higher than 638 kPa and 3.30 kN/m, respectively. One SW CF boxes showed BS and ECR higher than 785 kPa and 3.43 kN/m, respectively. In case of double-walled (DW) CF boxes, sixteen CF boxes showed BS and ECR higher than 785 kPa, 4.96 kN/m (AB flute), or 4.90 (EB flute), respectively. The other nineteen CF boxes showed BS and ECR higher than 981 kPa, 5.29 kN/m (AB flute), or 5.20 (EB flute), respectively. All the CF boxes except two samples showed the acceptable compression strength in reference to the guideline of KS.

Properties SiOF Thin Films Deposited by ECR Plasma CVD (ECR plasma CVD법에 의한 저유전율 SiOF 박막의 특성)

  • Lee, Seok-Hyeong;O, Gyeong-Hui
    • Korean Journal of Materials Research
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    • v.7 no.10
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    • pp.851-855
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    • 1997
  • 본 실험에서는 저유전율 층간절연물질로서 SiOF박막을 ECR plasma CVD를 이용하여 증착하였다. 또한 증착시에 발생시킨 플라즈마의 특성 분석을 위하여 Langmuir probe를 반응챔버에 부착하여 플라즈마 밀도, 마이크로파 전력은 700W, 기판온도는 30$0^{\circ}C$에서 행하였다. 증착된 SiOF 박막을 분석한 결과, 가스유량비(SiF$_{4}$/O$_{2}$)가 0.2에서 1.6으로 증가하였을 때 불소의 함량은 약 5.3at%에서 14.5at%로 증가하였으며, 굴절률은 1.501에서 1.391로 감소하였고 이는 불소 첨가에 의한 박막의 밀도감소에 의한 것으로 생각된다. 또한 박막의 유전상수는 가스유량비가 1.0(11.8qt.% F함유)일 때 3.14였다.

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The Development of 1MHz wireless power transmission module using Helical ECR device (1MHz 헬리컬 ECR장치를 이용한 무선전력전송 모듈 개발)

  • YANG, Haeyoul;LIM, Seongjin;KIM, Sungwan;PARK, Jaehyun;KIM, Changsun
    • Proceedings of the KIPE Conference
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    • 2011.07a
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    • pp.62-63
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    • 2011
  • The wireless power transfer system using electromagnetic resonance is consists of PFC circuit, LLC resonant converter, high frequency DC-AC inverter and ECR devices for wirelessly transmitting the power. The output voltage of the module with free input voltage is 1MHz, 230Vp-p. As a experimental result, the wireless power transmission is confirmed and it is varified the validity of the experiment.

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The Etching Characteristics of $MoSi_2$ film by ECR Etch (ECR Etch 에 의한 $MoSi_2$ 막의 식각 특성)

  • Lee, H.S.;Kang, H.B.;Park, G.S.;Lee, C.J.;Sung, Y.K.
    • Proceedings of the KIEE Conference
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    • 1992.07b
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    • pp.809-812
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    • 1992
  • Charateristics of the ECR etch were Investigated about $MoSi_2$ layer which is widely used for the capping layer and barrier layer in VLSI metallization. The etch rate was evaluated according to gas ratio of $SF_6/BCl_3$, $N_2$ flow rate, RF power and chamber pressure. The chamber pressure, the most important factor, represented the maximum etch rate at about the pressure of 10 mTorr.

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