• Journal of The Korean Astronomical Society
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• v.37 no.5
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• pp.295-297
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• 2004

Observations with EUVE, ROSAT, and BeepoSAX have shown that some clusters of galaxies produce intense EUV emission. These findings have produced considerable interest; over 100 papers have been published on this topic in the refereed literature. A notable suggestion as to the source of this radiation is that it is a 'warm' (106 K) intracluster medium which, if present, would constitute the major baryonic component of the universe. A more recent variation of this theme is that this material is 'warm-hot' intergalactic material condensing onto clusters. Alternatively, inverse Compton scattering of low energy cosmic rays against cosmic microwave background photons has been proposed as the source of this emission. Various origins of these particles have been posited, including an old (${\~}$Giga year) population of cluster cosmic rays; particles associated with relativistic jets in the cluster; and cascading particles produced by shocks from sub-cluster merging. The observational situation has been quite uncertain with many reports of detections which have been subsequently contradicted by analyses carried out by other groups. Evidence supporting a thermal and a non-thermal origin has been reported. The existing EUV, FUV, and optical data will be briefly reviewed and clarified. Direct observational evidence from a number of different satellites now rules out a thermal origin for this radiation. A new examination of subtle details of the EUV data suggests a new source mechanism: inverse Compton scattered emission from secondary electrons in the cluster. This suggestion will be discussed in the context of the data.

• Journal of Astronomy and Space Sciences
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• v.18 no.2
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• pp.145-152
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• 2001

For the research of solar EUV (extreme ultraviolet) radiation, we have designed a small-sifted engineering model of solar EUV telescope, which is suitable for a Korean satellite. The EUV sole. telescope was designed to observe the sun at $584.3AA$(He I) and $629.7AA$(OV) The optical system is an f/8 Ritchey-Chr rien, and the effective diameter and focal length are 80mm and 640mm, respectively. The He I and 0V filters are loaded in a filter wheel. In the detection part, the MCP (Microchannel Plate) type is Z-stack, and the channel-to-diameter radio is 40:1. MCP and CCD are connected by fiber optic taper. A commercial optical design software is used for the analysis of the optical system design.

• The Bulletin of The Korean Astronomical Society
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• v.43 no.1
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• pp.54.4-55
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• 2018

Propagating speeds of coronal mass ejections (CMEs) have been calculated by several geometrical models based on multi-view observations (STEREO/SECCHI and SOHO/LASCO). But in 2015, we were unable to obtain radial velocity of a CME because the STEREO satellites were located near the backside of the sun. As an alternative to resolve this problem, we propose a method to combine a coronal shock front, which appears on the outermost of the CME, and an EUV-wave that occurs on the solar disk. According to recent studies, EUV-wave occurs as a footprint of the coronal shockwave on the lower solar atmosphere. In this study, the shock, observed as a bubble shape, is assumed as a perfect sphere. This assumption makes it possible to determine the height of a coronal shock, by matching the position of an EUV-wave on the solar disk and a coronal shock front in coronagraph. The radial velocity of Halo-CME is calculated from the rate of coronal shock position shift. For an event happened on 2011 February 15, the calculated speed in this method is a little slower than the real velocity but faster than the apparent one. And these results and the efficiency of this approach are discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.108-108
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• 2010

We have generated Ne-Xe plasma in dense plasma focus device with hypocycloidal pinch for extreme ultraviolet (EUV) lithography and investigated an electron temperature. We have applied an input voltage 4.5 kV to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ne-Xe(30%) gas in accordance with pressure. If we assumed that the focused plasma regions satisfy the local thermodynamic equilibrium (LTE) conditions, the electron temperature of the hypocycloidal pinch plasma focus could be obtained by the optical emission spectroscopy (OES). The electron temperature has been measured by Boltzmann plot. The light intensity is proportion to the Bolzman factor. We have been measured the electron temperature by observation of relative Ne-Xe intensity. The EUV emission signal whose wavelength is about 6~16 nm has been detected by using a photo-detector (AXUV-100 Zr/C, IRD) and the line intensity has been detected by using a HR4000CG Composite-grating Spectrometer.

• The Bulletin of The Korean Astronomical Society
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• v.38 no.1
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• pp.60.2-60.2
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• 2013

We investigate several eruptive hot plasma observations by Hinode/XRT. Their corresponding EUV and/or white light CME features are visible in some events. Using those observations, we determine the mass constraints of eruptive plasma by assuming simplified geometrical structures of the plasma. In some events, their associated prominence eruptions and eruptive plasma were observed in EUV observations as absorption or emission features. The absorption feature provides the lower limit to the cold mass while the emission feature provides the upper limit to the mass of observed eruptive plasma in X-ray and EUV passbands. We compare the mass constraints for each temperature responses and find that the mass in EUV and XRT are smaller in their upper or lower limit than total mass in coronagraph. About half eruptive events in XRT have no corresponding CME, which may be due to failed eruptions or low plasma density. In addition, some events were observed by a few passbands in X-ray, which allows the determination of the eruptive plasma temperature using a filter ratio method. We present the isothermal plasma temperatures by the filter ratio method. These are possibly an average temperature for higher temperature plasma because the XRT is more sensitive in higher temperature.

• Journal of the Semiconductor & Display Technology
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• v.9 no.4
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• pp.13-18
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• 2010

Extreme ultraviolet (EUV) lithography using 13.5 nm wavelengths is expected to be adopted as a mass production technology for 32 nm half pitch and below. One of the new issues introduced by EUV lithography is the shadowing effect. Mask shadowing is a unique phenomenon caused by using mirror-based mask with an oblique incident angle of light. This results in a horizontal-vertical (H-V) biasing effect and ellipticity in the contact hole pattern. To minimize the shadowing effect, a refilled mask is an available option. The concept of refilled mask structure can be implemented by partial etching into the multilayer and then refilling the trench with an absorber material. The simulations were carried out to confirm the possibility of application of refilled mask in 32 nm line-and-space pattern under the condition of preproduction tool. The effect of sidewall angle in refilled mask is evaluated on image contrast and critical dimension (CD) on the wafer. We also simulated the effect of refilled absorber thickness on aerial image, H-V CD bias, and overlapping process window. Finally, we concluded that the refilled absorber thickness for minimizing shadowing effect should be thinner than etched depth.

• The Bulletin of The Korean Astronomical Society
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• v.44 no.1
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• pp.81.3-81.3
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• 2019

In this study, we apply conditional Generative Adversarial Network, which is one of the deep learning method, to the image-to-image translation from solar magentograms to solar UV and EUV images. For this, we train a model using pairs of SDO/AIA 9 wavelength UV and EUV images and their corresponding SDO/HMI line-of-sight magnetograms from 2011 to 2017 except August and September each year. We evaluate the model by comparing pairs of SDO/AIA images and corresponding generated ones in August and September. Our results from this study are as follows. First, we successfully generate SDO/AIA like solar UV and EUV images from SDO/HMI magnetograms. Second, our model has pixel-to-pixel correlation coefficients (CC) higher than 0.8 except 171. Third, our model slightly underestimates the pixel values in the view of Relative Error (RE), but the values are quite small. Fourth, considering CC and RE together, 1600 and 1700 photospheric UV line images, which have quite similar structures to the corresponding magnetogram, have the best results compared to other lines. This methodology can be applicable to many scientific fields that use several different filter images.

• The Bulletin of The Korean Astronomical Society
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• v.35 no.1
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• pp.28.2-28.2
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• 2010

We have investigated seven Extreme-Ultraviolet (EUV) bright points in the active region (AR 10926) on 2006 December 2 by the EUV imaging spectrometer (EIS) onboard Hinode spacecraft. We determined their Doppler velocities and non-thermal velocities from 15 EUV spectral lines (log T=4.7-7.2) by fitting each line profile to a Gaussian function. We present the Doppler velocity map as a function of temperature which corresponds to a different height. As a result, these active region bright points show two different types of characteristics. Type 1 bright point shows a systematic increase of Doppler velocity from -68 km/s (blue shift) at log T=4.7 to 27 km/s (red shift) at log T=6.7, while type 2 bright points have Doppler velocities in the range of -20 km/s and 20 km/s. Using MDI magnetograms, we found that only type 1 bright point was associated with the canceling magnetic feature at the rate of $2.4{\times}10^{18}$ Mx/hour. When assuming that these bright points are caused by magnetic reconnection and the Doppler shift indicates reconnection out flow, the pattern of the Doppler shift implies that type 1 bright point should be related to low atmosphere magnetic reconnection. We also determined electron densities from line ratio as well as temperatures from emission measure loci using CHIANTI atomic database. The electron densities of all bright points are comparable to typical values of active regions (log Ne=9.9-10.4). For the temperature analysis, the emission loci plots indicate that these bright points should not be isothermal though background is isothermal. The DEM analysis also show that while the background has a single peak distribution (isothermal), the EUV bright points, double peak distributions.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.332-332
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• 2011

The extreme ultraviolet (EUV) radiation, whose wavelength is from 120 nm down to 10 nm, and the energy from 10 eV up to 124 eV, is widely utilized such as in photoelectron spectroscopy, solar imaging, especially in lithography and soft x-ray microscopy. In this study, we have investigated the plasma diagnostics as well as the debris characteristics between the two types of dense plasma focusing devices with coaxial electrodes of Mather and hypocycloidal pinch (HCP), respectively. The EUV emission intensity, electron temperature and plasma density have been investigated in these cylindrical focused plasma along with the debris characteristics. An input voltage of 5 kV has been applied to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ar gas at pressure ranged from 1 mTorr and 180 mTorr. The inner surface of the cathode was covered by polyacetal insulator. The central anode electrode has been made of tin. The wavelength of the EUV emission has been measured to be in the range of 6~16 nm by a photo-detector (AXUV-100 Zr/C, IRD). The visible emission has also been measured by the spectrometer with the wavelength range of 200~1,100 nm. The electron temperature and plasma density have been measured by the Boltzmann plot and Stark broadening methods, respectively, under the assumption of local thermodynamic equilibrium (LTE).

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.277-280
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• 2001

국내 반도체 산업계의 메모리 반도체 생산규모는 세계 최대이지만 반도체 생산 장비는 대부분 수입에 의존하고 있다. 특히 lithography는 반도체 공정의 핵심일 뿐 아니라 반도체 기술 분야에서 국가의 총체적인 기술력을 대표한다. 2001년 7월에 과학 기술부가 나노급 lithography 장비 개발을 21세기 프론티어 사업으로 추진하기 위한 준비 작업에 착수하였다. 본 논문에서는 차세대 lithography로 채택된 EUV (Extreme Ultra Violet) lithography 장비 기술의 개요와 국내외 기술 개발 현황에 대하여 설명한다.