• ETRI Journal
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• 제28권4호
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• pp.525-528
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• 2006

In this letter, we present a design of a single chip video decoder called advanced mobile video ASIC (A-MoVa) for mobile multimedia applications. This chip uses a mixed hardware/software architecture to improve both its performance and its flexibility. We designed the chip using a partition between the hardware and software blocks, and developed the architecture of an H.264 decoder based on the system-on-a-chip (SoC) platform. This chip contains 290,000 logic gates, 670,000 memory gates, and its size is $7.5\;mm{\times}7.5\;mm$ (using 0.25 micron 4-layers metal CMOS technology).

• ETRI Journal
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• 제35권6호
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• pp.1164-1167
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• 2013

We correlate the failure in miniature X-ray tubes with the field emission gate leakage current of gated carbon nanotube emitters. The miniature X-ray tube, even with a small gate leakage current, exhibits an induced voltage on the gate electrode by the anode bias voltage, resulting in a very unstable operation and finally a failure. The induced gate voltage is apparently caused by charging at the insulating spacer of the miniature X-ray tube through the gate leakage current of the field emission. The gate leakage current could be a criterion for the successful fabrication of miniature X-ray tubes.

• ETRI Journal
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• 제25권4호
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• pp.270-273
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• 2003

This paper presents a simple process to integrate thin-film inductors with a bottom NiFe magnetic core. NiFe thin films with a thickness of 2 to 3${\mu}m$ were deposited by sputtering. A polyimide buffer layer and shadow mask were used to relax the stress of the NiFe films. The fabricated double spiral thin-film inductor showed an inductance of 0.49${\mu}H$ and a Q factor of 4.8 at 8 MHz. The DC-DC converter with the monolithically integrated thin-film inductor showed comparable performances to those with sandwiched magnetic layers. We simplified the integration process by eliminating the planarization process for the top magnetic core. The efficiency of the DC-DC converter with the monolithic thin-film inductor was 72% when the input voltage and output voltage were 3.5 V and 6 V, respectively, at an operating frequency of 8 MHz.

• ETRI Journal
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• 제29권4호
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• pp.452-456
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• 2007

Very compact 4-channel 200-GHz-spacing external cavity lasers (ECLs) were fabricated by hybrid integration of reflection gratings and superluminescent laser diodes on a planar lightwave circuit chip. The fifth-order gratings as reflection gratings were formed using a conventional contact-mask photo-lithography process to achieve low-cost fabrication. The lasing wavelength of the fabricated ECLs matched the ITU grid with an accuracy of ${\pm}0.1$ nm, and optical powers were more than 0.4 mW at the injection current of 80 mA for all channels. The ECLs showed single mode operations with more than 30 dB side lobe suppression.

• ETRI Journal
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• 제28권5호
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• pp.555-560
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• 2006

A PIN photodiode having a low dark current of 1.35 nA and a high external quantum efficiency of 95.3% fabricated for a passive optical network receiver. As the current was increased under a high voltage of 38 V and a temperature of $190^{\circ}C$, it was observed that there is a threshold current at 11 mA which induces a junction failure. Experimental data suggest that the junction failure occurs due to the crystal breaking at the end facet as a result of thermal heat or energetic carriers. This threshold behavior of junction failure is a valuable observation for the safe treatment of photodiodes. As long as the current is limited below the threshold currents, we have not observed failure events of our photodiodes.

• ETRI Journal
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• 제26권5호
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• pp.497-500
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• 2004

In this paper, we present a novel idea to integrate a low cost inertial measurement unit (IMU) and Global Positioning System (GPS) for land vehicle localization. By taking advantage of positioning data calculated from an image based on photogrammetry and stereo-vision techniques, errors caused by a GPS outage for land vehicle localization were significantly reduced in the proposed bimodal approach. More specifically, positioning data from the photogrammetric approach are fed back into the Kalman filter to reduce and compensate for IMU errors and improve the performance. Experimental results are presented to show the robustness of the proposed method, which can be used to reduce positioning errors caused by a low cost IMU when a GPS signal is not available in urban areas.

• ETRI Journal
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• 제28권3호
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• pp.393-396
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• 2006

This letter proposes a new impedance matching scheme of a traveling wave electro-absorption modulator (TWEAM) module for a 60 GHz band radio-over-fiber (ROF) link. A microstrip band pass filter (BPF) was used to achieve impedance matching at the 60 GHz band, and termination resistance was carefully designed to obtain an input impedance close to $50\;{\Omega}$. Also, a bias circuit for the device was designed in the module. The measured return loss and frequency response show that the modulator module observes the characteristics of a filter without the need of a further tuning process.

• ETRI Journal
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• 제33권5호
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• pp.810-813
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• 2011

We report the use of a widely tunable detuned dual-mode laser diode (DML) as a compact and portable continuous-wave THz emitter. The wavelength difference between the two lasing modes of this DML can be tuned from 2.4 nm to 9.3 nm by using integrated microheaters. The power difference between these modes is less than 1 dB, and the side-mode suppression ratio is greater than 30 dB over the entire tuning range.

• Journal of Information Display
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• 제2권3호
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• pp.72-77
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• 2001

Amorphous silicon thin-film transistors (a-Si TFTs) were incorporated into Mo-tip-based triode-type field emitters and diode-type ones of carbon nanotubes for an active-matrix cathode (AMC) plate of field emission displays. Also, we developed a novel surface-treatment process for the Mo-tip fabrication, which gleatly enhanced in the stability of field emission. The field emission currents of AMC plates on glass substrate were well controlled by the gate bias of a-Si TFTs. Active-matrix field emission displays (AMFEDs) with these AMC plates were demonstrated in a vacuum chamber, showing low-voltage matrix addressing, good stability and reliability of field emission, and highly uniform light emissions from the anode plate with phosphors. The optimum design of AMFEDs including a-Si TFTs and a new light shield/focusing grid is discussed.

• ETRI Journal
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• 제36권1호
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• pp.159-162
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• 2014

In this letter, we present low-temperature grown GaAs (LTG-GaAs)-based photoconductive antennas for the generation and detection of terahertz (THz) waves. The growth of LTG-GaAs and the annealing temperatures are systematically discussed based on the material characteristics and the properties of THz emission and detection. The optimum annealing temperature depends on the growth temperature, which turns out to be $540^{\circ}C$ to $580^{\circ}C$ for the initial excess arsenic density of $2{\times}10^{19}/cm^3$ to $8{\times}10^{19}/cm^3$.