• 한국전기전자재료학회논문지
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• 제23권2호
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• pp.133-136
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• 2010

Laser direct patterning is one of new methods which are able to replace a conventional photolithography. In order reduce the fabrication cost and to improve the luminous efficiency of AC plasma display panels (PDPs), in this experiment, a Q-switched Nd:$YVO_4$ laser was used to fabricate T-shaped indium tin oxide (ITO) display electrodes. For the laser beam scanning speed from 100 mm/sec to 800 mm/sec, T-shaped ITO patterns were clearly obtained and investigated. The experimental results showed that the optimized T-shaped ITO electrode was obtained when the lasers scanning speed was 300 mm/s.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2010년도 춘계학술대회
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• pp.365-368
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• 2010

순수 전기에너지로 움직이는 전기자동차는 저장에너지 시공간의 한계로 인하여 회생제동은 필수적이다. 본 연구에서는 전기자동차의 시스템 설계의 중요한 부분인 축전지 용량 크기와 수명에 영향을 미칠수 있는 회생 제동에 의한 에너지 효율 및 회생제동 순간 에너지 저장을 위한 울트라 캐패시터의 사이징에 대한 상관관계를 분석하여 효율적인 전기 자동차의 시스템 설계에 활용하고자 한다. 미국의 도심주행 코스를 대상으로 시뮬레이션을 수행하여 축전지 사이징과 회생제동의 효율, 울트라 캐패시터의 사이징에 대한 효율 관계를 제시하였다.

• 반도체디스플레이기술학회지
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• 제16권2호
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• pp.89-93
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• 2017

For various process pressures, aluminum doped zinc oxide(AZO) films were deposited by in-line pulsed-DC sputtering. The deposited AZO films were optically and electrically investigated and analyzed for the window layers of CIGS solar cell systems. As the pressure was increased from 9 mtorr to 15 mtorr, the thickness of AZO was decreased as a result of scattering and its sheet resistance was rapidly increased. The transmittance of AZO was slightly decreased as the pressure was increased and the calculation of figure of merit(F.O.M) was dependent on the sheet resistance. The structural characteristics of AZO thin films analyzed by X-ray diffraction(XRD) showed no significant dependency according to the pressure.

• 반도체디스플레이기술학회지
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• 제16권4호
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• pp.16-19
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• 2017

For the economical and environmental-friendly fabrication of polisher, Mo mask layer were sputtered on glass substrate instead of Cr mask material. Mo mask layers were sputtered by pulsed-DC sputtering and Photoresist patterns were formed on Mo mask layer for different develop times and optimized. After Mo mask layer were patterned and exposed glass was wet etched by HF solution for different etching times, the remaining Mo mask was stripped by using Al etchant. Develop time of 30 sec and HF wet etching time of 3 min were selected as optimized process condition and applied to the fabrication of polisher.

• 반도체디스플레이기술학회지
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• 제18권1호
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• pp.87-91
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• 2019

As a highly conductive and transparent electrode, ITO/Ag/ITO multilayers are fabricated using an in-line sputtering method. Optimal thickness conditions have been investigated in terms of the optical transmittance and the electrical conductance. Considering the optical properties, in this study, the experimental characteristics are analyzed based on theoretical phenomena, and they are compared with the simulated results. The simulations are based on the finite-difference-time-domain (FDTD) method in solving linear Maxwell equations. Consequently, the results showed that ITO/Ag/ITO multilayer structures with respective thicknesses of 39.2 nm/10.7 nm/39.2 nm are most suitable with an average transmittance of about 87% calculated for wavelengths ranging from 400-800 nm and a sheet resistance of about $7.1{\Omega}/{\square}$.

• 한국정보시스템학회지:정보시스템연구
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• 제22권1호
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• pp.201-223
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• 2013

모바일뱅킹은 빠르게 성장하고있으며 은행서비스의 많은 부분이 모바일뱅킹에서 제공되고 있다. 하지만, 모바일뱅킹을 사용자들이 수용하는데 개인의 혁신성이 어떠한 영향을 미치는지에 대한 연구는 많이 이루어지지 않고 있다. 불행히도 모바일뱅킹은 그 특성상 제한된 화면을 사용자들이 사용하기가 용이하지 않다. 본 연구는 개인혁신성(PI)의 관점에서 모바일뱅킹을 수용하는데 영향을 미치는 요인을 밝히고 자하였다. 특히 다른 정보시스템에서 많이 사용된 지각된 유용성(USF) 및 사용의 용이성(EOU) 변수뿐만 아니라 지각된 즐거움(ENJ)의 요인을 추가하여 모바일뱅킹 수용에서 영향요인을 분석하고자 하였다. 또한, 본 연구에서는 336명의 모바일뱅킹의 사용자들에게 설문을 실시하였으며, 응답자들을 두 그룹(개인 혁신성이 높은 그룹과 낮은 그룹)으로 분류하여 구조방정식모형에서 집단간차이를 분석하였다. 본 연구결과 개인 혁신성(PI) 모바일뱅킹 수용에 영향을 미치는 것으로 분석되었다. 세부적으로 분석해 보면 개인혁신성이 높은 그룹이 낮은 그룹 보다 더 많은 영향을 받는 것으로 분석되었다. 특히, 사용의도와 사용의 유용성 그리고 지각된 즐거움 사이의 경로계수 값의 크기가 개인혁신성이 높은 그룹이 낮은 그룹보다 높았다. 여기서 지각된 즐거움의 경우 개인 혁신성이 높은 그룹이 낮은 그룹 보다 더 많은 영향을 받는 것으로 분석되었다. 이러한 연구의 결과는 모바일뱅킹 서비스의 성장과 확대에 실무적으로 사용할 수 있을 것으로 분석된다.

• 한국전기전자재료학회논문지
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• 제25권5호
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• pp.377-380
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• 2012

Laser direct patterning of indium tin oxide(ITO) is one of new methods of direct etching process to replace the conventional photolithography. A diode pumped Q-switched Nd:$YVO_4$ (${\lambda}$= 1,064 nm) laser was used to produce ITO electrode on various transparent oxide semiconductor films such as zinc oxide(ZnO). The laser direct etched ITO patterns on ZnO were compared with those on glass substrate and were considered in terms of the overlapping rate of laser beam. In case of the laser etching on double-layer, it was possible to obtain the higher overlapping rate of laser beam.

• 한국전기전자재료학회논문지
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• 제26권4호
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• pp.304-308
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• 2013

For the application to the window layer of $Cu(In,Ga)Se_2$(CIGS) solar cell, zinc oxide(ZnO) thin film was deposited at various temperatures by in-line pulsed DC sputtering. From the structural, optical, and electrical investigation and analysis, it was possible to obtain the lower thickness, the lower resistivity, and the higher transmittance at a higher process temperature. The energy band gap of ZnO was calculated using the transmittance data and was analyzed in terms of the dependency on temperature. From the X-ray diffraction(XRD) results, it was possible to conclude that a dominant peak was found about $34.2{\sim}34.6^{\circ}$(111) and crystallinity was obtained at a temperature above $150^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제21권10호
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• pp.916-922
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• 2008

AC PDP with MgO protective layer coated with the optimum evaporation rate of $5{\AA}/s$ can generate more enhanced efficiency through the vacuum in-line sealing process. However, the optimized process conditions still require the optimum driving scheme on the ramp-up and ramp-down slope of the reset waveform for enhancing the efficiency. In this paper, for the in-situ vacuum sealed PDP with the optimum evaporation rate of MgO protective layer, the address delay time was investigated with various slopes of ramp waveform during a reset ramp-up and ramp-down period. In this study, the minimum statistical delay time was obtained at the ramp-up rate of $6.0 V/{\mu}s$ and the ramp-down rate of $0.7 V/{\mu}s$ of the reset waveform.

• 한국전기전자재료학회논문지
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• 제29권11호
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• pp.707-711
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• 2016

ITO/Ag/ITO conductive films on PET (polyethylene terephthalate) was etched by a Q-switched diode-pumped neodymiun-doped yttrium vanadate (Nd:YVO4, ${\lambda}=1064nm$) laser. During the laser direct etching, the laser beam was incident on the two different directions of PET and the etching patterns were investigated and analyzed. At a lower repetition rate of laser pulse, the larger laser etched patterns were obtained by laser beam incident on reverse side of PET substrate. On the contrary, at a higher repetition rate, it was possible to find the larger etched patterns in case of the laser beam incidence on forward side of PET substrate. For the laser beam incidence on reverse side, the laser beam is expected to be transferred and scattered through the PET substrate and the laser beam energy is thought to be dependent on the etch laser pulse beam energy.