• Transactions on Electrical and Electronic Materials
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• 제3권2호
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• pp.16-19
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• 2002

In this study, a novel red emitting organic electroluminescent (EL) device was fabricated with the bis(8-oxyquinolino)zinc II (Znq2) doped dye as an emitting layer. The Znq2 was synthesized successfully from zinc chloride (ZnC1$_2$) as an initial material. Then, we fabricated the red organic EL device with a dye (DCJTB) doped and inserted Znq2 between emission layer and cathode for increasing EL efficiency. The hole transporting layer is a N,N'-diphenyl-N,N'-bis-(3-methylphenyl)-1,1'-diphenyl-4,4-diamine (TPD), and the host material of emission layer is Znq2. And the electrical and luminance characteristics of the device were measured. We found that the EL device with Znq2 inserting layer results in the increasing luminance efficiency.

• Journal of information and communication convergence engineering
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• 제14권4호
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• pp.252-257
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• 2016

An edge-located electromagnetic bandgap (EL-EBG) structure using a defected ground structure (DGS) is proposed to suppress resonant modes induced by edge excitation in a two-dimensional planar parallel plate waveguide (PPW). The proposed EL-DGS-EBG PPW significantly mitigates multiple transverse-magnetic (TM) modes in a wideband frequency range corresponding to an EBG stopband. To verify the wideband suppression, test vehicles of a conventional PPW, a PPW with a mushroom-type EBG structure, and an EL-DGS-EBG PPW are fabricated using a commercial process involving printed circuit boards (PCBs). Measurements of the input impedances show that multiple resonant modes of the previous PPWs are significantly excited through an input port located at a PPW edge. In contrast, resonant modes in the EL-DGS-EBG PPW are substantially suppressed over the frequency range of 0.5 GHz to 2 GHz. In addition, we have experimentally demonstrated that the EL-DGS-EBG PPW reduces the radiated emission from -24 dB to -44 dB as compared to the conventional PPW.

• 반도체디스플레이기술학회지
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• 제19권1호
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• pp.49-54
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• 2020

The voltage drop due to the thin cathode film at the large size top emission OLED panel was successfully compensated with making electrical contact between thin cathode and anode auxiliary electrode by 355nm wavelength of laser. It was found that the luminance uniformity dramatically increased from around 15% to more than 80% through this electrical compensation between thin cathode and anode auxiliary electrode. Moreover, the removing process for EL materials on the anode auxiliary electrode process by laser was very reliable and stable. Therefore, it is thought that the EL removal method using laser to make electrical contacts is very appropriate to mass production for such a large size top emission OLEDs to obtain high uniformity of luminance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.351-354
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• 2001

We fabricated organic electroluminescent(EL) devices with mixed emitting layer of poly (N- vinylcarbazole) ( PVK) , 2,5-bis (5-tert-butyl -2- benzoxaBoly) thiophene ( BBOT) , N,N-diphenyl-N,N- (3-methyphenyl) -1,1-biphenyl-4, 4-thiamine(TPD) and poly(3-hexylthiophene) (P3HT) deposited by LB(Langumuir-Boldgett) method. From the AFM(atomic force microscope) images, the monolayer containing 30% of AA(arachidic acid) showed a roughness value of 28$\AA$. In the voltage-current characteristics of ITO/Emitting layer/BBOT/LiF/A1 devices, current density much smaller than that of the spin-coated devices having a same thickness.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.948-951
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• 2003

The electroluminescence (EL) properties were studied in organic light-emitting diodes with a red fluorescent dye, 4- (dicyanomethylene)- 2- tert-butyl-6 (1,1,7,7-tetramethyljulolidyl-9-enyl)- 4H- pyran (DCJTB) doped into tris-(8-hydroxyquinoline)aluminum ($Alq_{3}$), rubrene and the mixed matrix of $Alq_3$ and rubrene. The device with DCJTB doped into the $Alq_{3}$:rubrene mixed host shows an efficient red emission from DCJTB with a negligible EL emission from $Alq_{3}$ and a lower EL onset voltage compared to the device with DCJTB doped into the $Alq_{3}$ only host. The quantum efficiency is almost temperature-independent for the device with the $Alq_3:rubrene$ mixed host. The results indicate that recombination of injected electrons and holes occurs on rubrene and subsequent energy transfer to DCJTB dominates in the device with the $Alq_{3}$:rubrene mixed host.

• 한국전기전자재료학회논문지
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• 제21권10호
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• pp.911-915
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• 2008

EL (electro-luminescent) device as a light source has an advantage in embodying large area with great flexibility. On nickel foil as an electrode and backplane, we demonstrated a white EL flexible light source with blue phosphor layer combined with color change layer. A correlation between color change layer and color coordination was analyzed by Gaussian method, and then the color coordinate was controlled near to (0.33, 0.33) of pure white light.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.506-509
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• 2002

In this paper. we give pressure stimulation into organic ultra thin films and detected the induced displacement current proper ties, and then manufacture a device under the accumulation condition. In processing of a device manufacture. And electroluminescence(EL) from conjugated polymers has recently received great attention because polymer light-emitting diodes(LEDs) clealy have potential for applications such as large-area displays. The operation of polymer LEDs is based on double injection of electrons and holes from the elextrodes. followed by formation of excitons whose radiative decay results in light emission at wavelength characteristic to the material. In this paper, we fabricated the single layer EL device using $Alq_3$ as emitting material. According as turn on voltage could know about 5.5V in voltage-current characteristics and voltage rise, current could see that increase as non-linear, Current and ruminance can see that express similar relativity in voltage, and could know that ruminance is expressing current relativity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.602-605
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• 1999

We dried emitting layer of EL device at 30, 80, I20 and $150^{\circ}C$ for Ihr to investigate the effects to the emission characteristics of devices. PL intensity of P3HT thin film decreased with increasing the drying temperature. But, the EL intensity and stability of device with emitting layer dried at $150^{\circ}C$ were the best. We think it s because of absence of water and remaining solvent in P3HT emitting layer. So, We suggest that the drying temperature of emitting layer of EL device should be select slightly low temperature than its glass transition temperature.

• 한국전기전자재료학회논문지
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• 제14권11호
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• pp.922-927
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• 2001

Single-layer green ELs was fabricated with using molecularly-dispersed Bu-PBD into poly-N-vinylcarbazole(PVK) which has low operating voltage and high quantum efficiency. A EL cell structure of glass substrate/indium-tin-oxide/PVK:Bu-PBD:C6(∼ 100nm)/Ca(20nm)/Al(20nm) was employed with variable doping concentration. The keys to obtain high quantum efficiency was excellent film forming capability of molecularly dispersed into PVK and appropriate combination of cathode for avoiding exciplex. We obtained the turn-on voltage of 4.2V and quantum efficiency of 0.52% at 0.lmol% of C6 concentration which has been improved about a factor of 50 in comparison with the undoped cell. The PL peak wavelengths wouldn\`t be turned by changing the concentration of the C6 dopant. Green EL emission peak and FWHM were 520nm and 70nm respectively. PL emission peak was obtained at 495nm.

• Journal of Information Display
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• 제7권4호
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• pp.9-12
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• 2006

This paper reports the synthesis and electroluminescent properties of new aromatic compounds as hole-transporting materials based on phenothiazine, such as 1,4-diphenothiazyl-benzene [DPtzB], 1,4-diphenothiazyl-xylene [DPtzX] and 9,10-diphenothiazyl-anthracene [DPtzA]. DPtzB thin film exhibited photoluminescence (PL) maximum emission peak and emission shoulder at 450 and 475 nm, and a maximum emission at 447 nm without emission shoulder was obtained in DPtzX thin film. When DPtzA was excited by incident light of 359 nm, DPtzA showed strong PL emission at 417 nm and weak emission at 600 nm. Luminance efficiency of DPtzB, DPtzX and DPtzA-based electroluminescence (EL) devices was 3.57, 3.46 and 0.47 cd/A, and power efficiency of DPtzB, DPtzX and DPtzA-based EL devices was 1.48, 1.26 and 0.201 m/W.