• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.145-150
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• 1995

PZT thin films were fabricated on Pt/Ti/SiO2/Si substrates at $500^{\circ}C$ by ECR-PECVD for the application to the charge storage capacitor of ULSI DRAMs. Perovskite single phase PZT films were obtained by controling the film compositional ratio Pb/(Zr+Ti) close to 1. The anion concentrations in the PZT films were successfully controlled by adjusting the flow rates of each MO sources. Capacitance of a typical 94 nm thick PZT film prepared at $500^{\circ}C$ in this work was about 5.3 uF/$\textrm{cm}^2$, which corresponds to the equivalent SiO2 thickness of 0.65nm.

• Carbon letters
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• v.5 no.4
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• pp.191-196
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• 2004

The electrochemical removal (ECR) of water pollutants by activated carbon fiber (ACF) electrodes from wastewater was investigated over wide range of electrochemical reaction time. The ECR capacities of ACF electrodes were associated with their internal porosity and were related to physical properties and to reaction time. And, surface morphologies and elemental analysis for the ACFs after electrochemical reaction are investigated by SEM and EDX to explain the changes in adsorption properties. The FT-IR spectra of ACFs for the investigation of functional groups show that the electrochemical treatment is consequently associated with the homogeneous removal of pollutants with the increasing surface reactivity of the activated carbon fiber surfaces. The ACFs were electrochemically reacted to waste water to investigate the removal efficiency for the COD, T-N and T-P. From these removal results of pollutants using ACFs substrate, satisfactory removal performance was obtained. The outstanding removal effects of the ACFs substrate were determined by the properties of the material for adsorption and trapping of organics, and catalytic effects.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.242.1-242.1
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• 2014

The electron cyclotron resonance plasma source with a belt-type magnet assembly (BMA) is designed for effective plasma confinements. For characterizing the plasma source, the plasma parameters are measured by Langmuir probe. However, the plasma parameters and the motion of charged particles near the ECR zone are not easy to diagnostics, because of the high plasma density and temperature. Thus, as an alternative method, the electromagnetic simulation of the plasma source has been performed by using three-dimensional particle-in-cell and Monte Carlo collisional (PIC-MCC) simulation codes. For considering the limitation of simulation resources and time, the periodic boundary condition is applied and the coulomb collision is neglected. In this paper, we present the results of 3D PIC simulations of ECR plasmas with BMA and we compare them with the experimental results.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.224-225
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• 2011

전자 사이클로트론 공명 이온원(Electron Cyclotron Resonance Ion Source; ECR 이온원)을 사용하여 다가(multi-charged) 이온빔을 인출하고 이온들을 분리하였다. 사용된 ECR 이온원은 그림 1과 같은 구조를 가진다. 그림 1에서 축자장을 만드는 자석(axial magnet)은 세 뭉치의 상전도 전자석으로, 그리고 육극자장을 만드는 자석(hexapole magnet)은 영구자석으로 되어 있으며 14.5 GHz 고주파는 도파관을 통하여 용기의 축과 평행한 방향으로 입사된다. 헬륨, 아르곤, 메탄(CH4), 이산화탄소(CO2)를 사용하여 빔 인출 및 이온 분리 실험을 진행하였으며, 본 논문에서는 운전조건의 최적화 과정을 수행하기 전에 진행된 초기 실험결과들에 대하여 논의한다. 그림 2는 헬륨을 사용한 경우의 질량 스펙트럼이다.

• Progress in Superconductivity and Cryogenics
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• v.18 no.2
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• pp.37-41
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• 2016

This paper presents the developed quench analysis code and protection circuit design for a superconducting magnet system of 28GHz electron cyclotron resonance (ECR) ion source. The superconducting magnet is composed of a hexapole magnet and four solenoid magnets located outside of the hexapole one. All magnets are wound with NbTi composite wire and impregnated by epoxy. By using the developed characteristic analysis code, the normal zone resistance, decaying current and temperature rising can be estimated during quench. Also, the stored magnetic energy is successfully consumed from the series resistor of the designed protection circuit. The analytical results are compared with the experimental results to verify the developed quench analysis code and protection circuit.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.386-388
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• 1996

Low dielectric constant fluorinated oxide (SiOF) films were deposited using SiF$_4$/O$_2$/SiH$_4$mixtures by electron cyclotron resonance chemical vapor deposition (ECR CVD). Chemical composition of SiOF films was investigated by Fourier transform infrared spectroscopy (FT-lR). The fluorine content in the SiOF film observed by X-ray photoelectron spectroscopy (XPS). The dielectric constant decreased with increasing of the SiF$_4$ flow rate about 8sccm. The SiOF film, deposited with SiF$_4$=8 sccm, exhibited a F content of 5 atomic % and a relative dielectric constant 3.45. For evaluating SiOF films stability, humidity tests were performed.

• Journal of the Korean housing association
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• v.15 no.3
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• pp.53-62
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• 2004

Recently the landscape of housing has been emphasized. This trend seems to reflect the negative aspects of housing landscape in urban area. Throughout the analysis on the various visual density index, the following findings were obtained; 1) Elevation blockage ratio(EBR) was permitted differently according to the types of housing blocks, and the preference of block layout was different to the location of site. 2) EBR regulation level was acceptable. But 40m level of general area should be stepped up to the 35m level. 3) The correlation between the floor area ratio(FAR) and the EBR was not high. Therefore it is reasonable to regulate the EBR to the location. 4) Elevation coverage ratio(ECR) was highly correlated with the FAR. It means that FAR can substitute for the ECR, and ECR should be regulated to the level of FAR.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.5
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• pp.492-501
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• 1992

In this paper, an ion analyzer is used in conjunction with a Langmuir probe to study the chracteristics of ECR plasma such as the ion temperature, ion current density and electron temperature as the operating pressure, ${\mu}$-wave power and axial position change, Silicon etching has been performed with RF-biasing and its etching chracteristics have been discussed in terms of the ion energy distribution function. The maximum value of ion current density appears in the range of 10S0-3T mbar and the broadening of ion energy distribution function increases as pressure increases. Therefore, as pressure decreases, anisotropy increases but selectivity to photoresist decreases.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.7
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• pp.563-567
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• 2000

We presented the etch results of indium-tin oxide thin films by using SF$_{6}$/O$_2$gas electron cyclotron resonance plasma and conducted X-ray phtoelectron spectroscopy and quadrupole mass spectrometer analyses for the etch characteristics. The etch rate of the films was greatly dependent on that of oxygen which was the major constituent element of the films. The oxygen was removed by the forms like $O_2$or SOF$_2$. We examined the ratio of atomic content of O and In and the change of this ratio was related to the removal rate of InF$_{x}$ and the S-metal bonding.ing.

• Journal of the Korean institute of surface engineering
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• v.23 no.4
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• pp.218-224
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• 1990

Silicon nitride thin(SiNx) is deposited onto 3 inch silicon wafor using ECR plasma apparatus. For the two different plasma extraction windows size, the thin films which were deposited by changing the SiH4/N2 gas fole at at 1.5mTorr without substrate heating are analyzed through the XPS and wlliposometer measurements. The very uniform and good quality silicon nitride thin film were obtained with the analyzed results of the deposited films, and particularly, ion temperature perpendicular to the magnetic filed was nearly same as the neutral gas temperature. The large amount of plasma loss in the transport process following magnetic field lines could be seen from the plasma emission intensity measurements.