• Fisheries and Aquatic Sciences
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• 제16권4호
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• pp.273-277
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• 2013

Vibriosis caused by Vibrio anguillarum and edwardsiellosis caused by Edwardsiella tarda are septicemic diseases of many commercially important freshwater and marine fishes, and threaten the aquaculture industry in Korea. Early diagnosis and accurate identification of these two bacterial species could help to prevent these diseases and minimize the damage to cultured marine species. This study designed a duplex polymerase chain reaction (PCR) method for the simultaneous detection of two major fish pathogens: V. anguillarum and E. tarda. Each pair of oligonucleotide primers exclusively amplified the target groEL gene of the specific microorganism. Twenty-two Vibrio and ten non-Vibrio enteric species were used to check the specificity of the primers, which were found to be highly specific for the target species, even among closely related species. The detection limit was 400 pg for V. anguillarum and 4 ng for E. tarda when mixed purified DNA was used as the template. This assay showed high specificity and sensitivity in the simultaneous detection of V. anguillarum and E. tarda from artificially inoculated seawater and fish.

• Bulletin of the Korean Chemical Society
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• 제28권8호
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• pp.1341-1345
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• 2007

The surface chemistry of D2O dosed Zircaloy-4 (Zry-4) surface followed by Ar-ion bombardment and annealing was studied by means of X-ray photoelectron spectroscopy (XPS) and Ultraviolet photoelectron spectroscopy (UPS). In the XPS study, Ar-ion bombardment caused decrease of the oxygen on the surface region of Zry-4 and therefore led to change the oxidation states of the zirconium from oxide to metallic form. In addition, oxidation states of zirconium were changed to lower oxidation states of zirconium due to depopulation of oxygen on the surface region by annealing. Up to about 787 K, the bulk oxygen diffused out to the subsurface region and after this temperature, the oxygen on the surface of Zry-4 was depopulated. UPS study showed that the valence band spectrum of the D2O exposed Zry-4 exhibited a dominant peak at around 13 eV and no clear Fermi edge was detected. After stepwise Ar+ sputtering processes, the decrease of the oxygen on the surface of Zry-4 led to suppress the dominant peak around 13 eV, the peak around 9 eV and develop a new peak of the metallic Zr 4d state (20.5-21.0 eV) at the Fermi level.

• International journal of thyroidology
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• 제11권2호
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• pp.152-159
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• 2018

Background and Objectives: Sodium-iodine symporter (NIS) is a marker for the degree of differentiation in thyroid cancer. The genetic factors or microenvironment surrounding tumors can affect transcription of NIS. In this study, we investigated the NIS mRNA expression according to mutational status and coexistent lymphocytic thyroiditis in papillary thyroid cancer (PTC). Materials and Methods: The RNA expression levels of NIS in the samples from database of The Caner Genome Atlas (TCGA; n=494) and our institute (n=125) were analyzed. Results: The PTCs with the $BRAF^{V600E}$ mutation and the coexistence of $BRAF^{V600E}$ and TERT promoter mutations showed significantly lower expression of NIS (p<0.001, respectively), and those with BRAF-like molecular subtype also had reduced expression of NIS (p<0.001). NIS expression showed a positive correlation with thyroid differentiation score (r=0.593, p<0.001) and negative correlations with expressions of genes involved in ERK signaling (r=-0.164, p<0.001) and GLUT-1 gene (r=-0.204, p<0.001). The PTCs with lymphocytic thyroiditis showed significantly higher NIS expression (p=0.013), regardless of mutational status. Conclusion: The NIS expression was reduced by the $BRAF^{V600E}$ mutation and MAPK/ERK pathway activation, but restored by the presence of lymphocytic thyroiditis.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 추계학술대회 초록집
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• pp.64.1-64.1
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• 2011

다중접합 태양전지는 흡수대역이 다른 juntion으로 구성되어, 각각의 태양전지 간의 전류정합(current matching)이 효율 향상에 중요하다. 본 실험에서는 Top cell에 i-a-Si:H(Thinckness:100nm), Middle cell에는 i-a-SiGe:H(Thickness:800nm)을 적용하였고, bottom cell에는 i-${\mu}c$-Si:H(Thickness:1800nm), 수광부의 p-layer에 에 SiOx을 이용하여 triple juntion amorphous silicon solar cell(삼중접합태양전지)을 구현하였다. 이를 최적화 시키기 위해 ASA simulation을 이용하여 각 Cell의 intrinsic layer의 밴드갭을 가변하였다. 가변 결과 i-a-Si:H : 1.85 eV, i-a-SiGe:H: 1.6 eV, i-${\mu}c$-Si:H: 1.4 eV에서 태양전지 효율 14.5 %을 기록 하였다. 본 연구를 통해 Triple juntion cell에서의 intrinsic layer의 밴드갭 최적화를 구현해 볼 수 있었다.

• 전자공학회논문지A
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• 제32A권7호
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• pp.58-68
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• 1995

Polysilicon capacitors with pyrogenic oxide and TEOX oxide as insulators were fabricated to develop capacitors which can be applied to analog CMOS IC, and the characteristics of the capacitors were compared with each other. The morphology of bottom polysilicon in pyrogenic oxide capacitor is degraded due to the generaged protuberances of the polysilicon grain during oxidataion. The polysilican capacitor with pyrogenic oxide of 57 nm thickness showed that the effective potential barrier height of 0.45 eV is much less than that of MOS capacitor (3.2 eV)when the top electrode is biased with a positive volgate. The morphology of the polysilicon capacitor with TEOS oxide, however, was not degraded during oxide deposition by LPCVD. The polysilicon capacitor with TEOS oxide of 54 nm thickness showed the effective potential barrier height of 1.28 eV when the top electrode is biased with a negative voltage. Therefore, it is concluded that the polysilicon capacitor with TEOS oxide is more applicable to analog CMOS IC than the pyrogenic oxide polysilicon capacitor.

• 센서학회지
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• 제25권6호
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• pp.440-446
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• 2016

This study introduces the characteristics of current-voltage (I-V) and impedance variance for $ZnO-Zn_2BiVO_6-Co_3O_4$ (ZZCo), which is sintered at $900^{\circ}C$, according to temperature changes. ZZCo varistor demonstrates dramatic improvement of non-linear coefficient, ${\alpha}=66$, with lower leakage current and higher insulating resistivity than those of ZZ ($ZnO-Zn_2BiVO_6$) from the aspect of I-V curves. While both systems are thermally stable up to $125^{\circ}C$, ZZCo represents a higher grain boundary activation energy with 1.05 eV and 0.94 eV of J-E-T and from IS & MS, respectively, than that of ZZ with 0.73 eV and 0.82 eV of J-E-T and from IS & MS, respectively, in the region above $180^{\circ}C$. It could be attributed to the formation of $V^*_o$(0.41~0.47 eV) as dominant defect in two systems, as well as the defect-induced capacitance increase from 781 pF to 1 nF in accordance with increasing temperature. On the other hand, both the grain boundary capacitances of ZZ and ZZCo are shown to decrease to 357 pF and 349 pF, respectively, while the resistances systems decreased exponentially, in accordance with increasing temperature. So, this paper suggests that the application of newly formed liquid phases as sintering additives in both $Zn_2BiVO_6$ and the ZZCo-based varistors would be helpful in developing commercialized devices such as chips, disk-type ZnO varistors in the future.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 A
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• pp.403-405
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• 1993

The ultrasonic sensor used in autonomous mobile robot and autonomous guided vehicle(A.G.V.) is not available for long range measurement. And as the performance of autonomous mobile robot and A.G.V. improves, the importance of the range sensor for long range measurement is increasing. In this paper, we introduce the range sensor for long range measurement using milimeter wave sensor and propose the structure of that system.

• 전기전자학회논문지
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• 제18권4호
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• pp.447-455
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• 2014

본 연구에서는 4H-SiC MOSFET의 주요 문제점인 $SiC/SiO_2$ 계면의 특성을 향상시키기 위해 PECVD (plasma enhanced chemical vapor deposition) 공정을 이용하여 n-based 4H-SiC MOS Capacitor를 제작하였다. 건식 산화 공정의 낮은 성장속도, 높은 계면포획 밀도와 $SiO_2$의 낮은 항복전계 등의 문제를 극복하기 위하여 PECVD와 NO어닐링 공정을 사용하여 MOS Capacitor를 제작하였다. 제작이 끝난 후, MOS Capacitor의 계면특성을 hi-lo C-V 측정, I-V 측정 및 SIMS를 이용해 측정하고 평가하였다. 계면의 특성을 건식 산화의 경우와 비교한 결과 20% 감소한 평탄대 전압 변화, 25% 감소한 $SiO_2$ 유효 전하 밀도, 8MV/cm의 증가한 $SiO_2$ 항복전계 및 1.57eV의 유효 에너지 장벽 높이, 전도대 아래로 0.375~0.495eV만큼 떨어져 있는 에너지 영역에서 69.05% 감소한 계면 포획 농도를 확인함으로써 향상된 계면 및 산화막 특성을 얻을 수 있었다.

• 터널과지하공간
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• 제18권5호
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• pp.386-392
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• 2008

최근 국내에서도 일정 규모이상의 구조물과 건축물에 대한 내진설계가 필수적으로 되어 가고 있지만, 연구자료의 부족으로 외국문헌에서 인용 또는 참고하고 있어 실제 측정한 자료와 비교하는 것이 일반적이다. 그러나 외국문헌의 값은 우리나라의 지질특성과는 상당한 차이를 보이기 때문에 우리나라 화강암지대의 암질별 탄성파속도($V_p,\;V_s$)의 특성 및 동적특성치($E_d,\;G_d\;K_d$)와의 상관관계를 규명하여 국내 지질특성에 적합한 동적특성치의 특성을 제시하고자 한다.

• 한국세라믹학회지
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• 제35권8호
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• pp.813-818
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• 1998

A simple method to measure the elastic modulus E and Poisson's ratio v of diamod-like carbon (DLC) films deposited on Si wafer was suggested. Using the anisotropic etching technique of Si we could make the edge of DLC overhang free from constraint of Si substrate. DLC film is chemically so inert that we could not on-serve any surface damage after the etching process. The edge of DLC overhang free from constraint of Si substrate exhibited periodic sinusoidal shape. By measuring the amplitude and the wavelength of the sinu-soidal edge we could determine the stain of the film required to adhere to the substrate. Since the residual stress of film can be determine independently by measurement of the curvature of film-substrate com-posite we could calculated the biaxial elastic modulus E/(1-v) using stress-strain relation of thin films. By comparing the biaxial elastic modulus with the plane-strain modulus E/(1-{{{{ { v}^{2 } }}) measured by nano-in-dentation we could further determine the elastic modulus and Poisson's ratio independently. This method was employed to measure the mechanical properties of DLC films deposited by {{{{ { {C }_{6 }H }_{6 } }} rf glow discharge. The was elastic modulus E increased from 94 to 169 GPa as the {{{{ { V}_{ b} / SQRT { P} }} increased from 127 to 221 V/{{{{ {mTorr }^{1/2 } }} Poisson's ratio was estimated to be abou 0.16∼0.22 in this {{{{ { V}_{ b} / SQRT { P} }} range. For the {{{{ { V}_{ b} / SQRT { P} }} less than 127V/{{{{ {mTorr }^{1/2 } }} where the plastic deformation can occur by the substrate etching process however the present method could not be applied.