• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 A
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• pp.192-194
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• 2004

At present, application of PSS/E input data for power flow , stability and fault analysis consist of only 154kV and over data(except 22.9kV data). 22.9kV(5.C) Static Condenser is in operation and installation at 22.9kV Bus of 154kV Substation. however, we assume that 22.9kV 5.C install at 154kV Bus. so, we need to study and search about critical limit for 154kV Bus standard operating Voltage according to 22.9kV 5.C Modeling Site by PSS/E Ver28

• The Korean Journal of Ceramics
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• 제2권3호
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• pp.131-136
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• 1996

The electrical conductivity of polycrystalline TiO2 samples was measured over the temperature range 1000°-1400℃ and from 0.21 to 10-16 atm of oxygen. Based on the excellent fit observed between the theoretically derived relatin σ3=(Aσ+B)Po2-1/2+D'σ2 and the experimental conductivity data, the nonstoichimetric defect structure of TiO2 was rationalized in terms of a defect model involving quasi-free electrons and both singly and doubly ionized oxygen vacancies. The standard enthalpy of formation for the following defect reactions in TiO2. (a) OO={{{{ { 1} over {2 } }}O2(g)+VO+e'; Δ{{{{ { H}`_{o } ^{a } }}=5.15(eV) (b) OO={{{{ { 1} over {2 } }}O2(g)+VO+2e'; Δ{{{{ { H}`_{0 } ^{ a} }}=6.30(eV) (c) VO=VO+e'; Δ{{{{ { H}`_{0 } ^{a } }}=1.15(eV) were determined from the temperature dependence of A and B obtained from the above relation and from the experimental expression between the electron mobility and temperature. The electrical conductivity of TiO2 in air below approximately 950℃ appears, on the basis of this investigation, to be impurity controlled due to the presence of aluminum rather than intrinsic conduction.

• 한국전기전자재료학회논문지
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• 제23권5호
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• pp.368-373
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• 2010

In this study, we have investigated the effects of Cr dopant on the bulk trap levels and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) varistor using admittance spectroscopy and dielectric functions (such as $Z^*,\;Y^*,\;M^*,\;{\varepsilon}^*$, and $tan{\delta}$). Admittance spectra show more than two bulk traps of $Zn_i$ and $V_o$ probably in different ionization states in ZnO-$Bi_2O_3-Cr_2O_3$ (ZBCr) system. Three kinds of temperature-dependant activation energies ($E_{bt}'s$) were calculated as 0.11~0.14 eV of attractive coulombic center, 0.16~0.17 eV of $Zn_{\ddot{i}}$, and 0.33 eV of $V_o^{\cdot}$ as dominant bulk defects. The grain boundaries of ZBCr could be electrochemically divided into two types as a sensitive to ambient oxygen i.e. electrically active one and an oxygen-insensitive i.e. electrically inactive one. The grain boundaries were electrically single type under 460 K (equivalent circuit as parallel $R_{gb1}C_{gb1}$) but separated as double one ($R_{gb1}C_{gb1}-R_{gb2}C_{gb2}$) over 480 K. It is revealed that the dielectric functions are very useful tool to separate the overlapped bulk defect levels and to characterize the electrical properties of grain boundaries.

• 한국진공학회지
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• 제9권2호
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• pp.130-135
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• 2000

Photoluminescence(PL)와 photoreflectance(PR)를 이용하여 $Al_{0.25}/Ga_{0.75}/As/In_{0.15}/Ga_{0.85}$/AS/GaAS 슈우도형 고 전자 이동도 트랜지스터 구조에 대한 특성을 조사하였다. 온도 10K의 PL측정에서 InGaAs 양자우물에 의한 e2-hl 및 e2-hl 전이 피크가 각각 1.322 및 1.397 eV에서 관측되었다. 온도 의존성으로부터 첫번째 가전자 띠와 두번째 가전자 띠의 에너지 차이는 약 23'meV로 나타났다. 또한 300 K에서의 PR 측정으로 e2-h2및 e2-hl 전이에 의한 피크를 관측하였고, 두번째 전도 띠의 에너지 준위에 의한 피크가 띠 채움으로 인해 첫번째 전도 띠의 에너지 준위에 의한 피크보다 상대적으로 우세하였다. 반면에 PL 측정에서는 전자 가리개 효과 때문에 첫번째 전도 띠에 의한 피크가 우세하였다.

• 생명과학회지
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• 제9권1호
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• pp.106-110
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• 1999

감염성 Vibrio vulnificus에 의한 패혈증과 같은 질병의 원인을 알아보기 위하여 Vibrio vulnificus로 부터 세포벽 lipopolysaccharide를 추출한 후 지방산 조성을 분석하고 limulus gelation activity와 lethal toxicity를 측정하였다. 이 결과들을 비감염성 Escherichia coli LPS와 감염성 Salmonella typhimurium LPS의 것들과 비교하였다. V. vulnificus LPS의 주 지방산은 myristic acid 이었고 E. coli LPS는 lauric acid, S. typhimurium LPS는 capric acid 이었다. 세가지 LPS의 Limulus gelation activity는 같았으며(0.1ng/ml), V. vulnificus LPS의 lethal toxicity는 E. coli LPS와 S. typhimurium LPS의 것과 비슷하였다. LPS 이외에도 exotoxin과 같은 인자들도 V. vulnificus에 의한 세포 독성의 원인으로 고려해야 할 것이다

• 한국동물학회:학술대회논문집
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• 한국동물학회 1995년도 한국생물과학협회 학술발표대회
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• pp.120-120
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• 1995

The total size of the pF AR1, a genomic clone of Frankia FaCI, was estimated to be about 44Kb by summation of the individual fragment length generated by single or double restriction enzymes. Southern hybridization analyses with Azotobacter vinelandii nif-genes as probes and partial sequencing analyses of the subclones revealed that organization of the nif-gene in the FaCI strain was nifV, H, D, K, E, N, X, W, B. The organization of the structural genes for nitrogenase is the same in this Frankia strain as it is in most other nitrogen-fixing prokaryotes but the positioning of the nifV-like gene relative to the nifHDK cluster differs. A consensus nif-promoter-like sequence, found at 5' of nifH, was not detected upstream of the niJV-like gene. nifV-like gene contained a ORF of 1206 NT encoding 401 amino acids. The nucleotide sequence and deduced amino acid sequence of the gene exhibit homology value of 65% and 41% with that from A vinelandii, respectively. The putative Shine-Dargamo sequences were present preceding nitK, nifH, D, K, and nifE, and in nitK gene putative start codon GTG was detected instead of A TG. The nucleotide and amino acid sequence of niIK of FaCI showed 82% and 76% homolgy with those of Frankia HFPCc 13, respectively. Amino acid sequence of niIK showed 69% and 61% homology with those of A vinelandii, Klebsiella pnewnoniae, respectively, while that of nifE 73% and 71%, respecti vely.i vely.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.44-47
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• 1997

In spite of the addtion of Zn, a high quality of Zn-doped GaN film were prepared. The growth rates of Zn-doped GaN films were varied from 0.14${\mu}{\textrm}{m}$/min to 0.05${\mu}{\textrm}{m}$/min according to the amount of Zn incorporated, The smallest value of the FWHM of x-ray rocking curve was 407 arcsec. The Zn-related Photoluminescence emission peaks which occurred at 2.927 and 2.824 eV shifted toward the low energy region by increasing Zn partial pressures. It was compared between the intensities of D-A pair (3.259eV) and that of the exciton bound to acceptor band(E$_{x-A}$=3.449eV).).

• Journal of applied mathematics & informatics
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• 제40권1_2호
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• pp.117-132
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• 2022

Reverse edge magic(REM) labeling of the graph G = (V, E) is a bijection of vertices and edges to a set of numbers from the set, defined by λ : V ∪ E → {1, 2, 3, …, |V| + |E|} with the property that for every xy ∈ E, constant k is the weight of equals to a xy, that is λ(xy) - [λ(x) + λ(x)] = k for some integer k. We given the construction of REM labeling for the Cartesian Product, Unions of Braids and Unions of Triangular Belts. The Kotzig array used in this paper is the 3 × (2r + 1) kotzig array. we test the konow results about REM labelling that are related to the new results we found.

• 한국경영과학회:학술대회논문집
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• 대한산업공학회/한국경영과학회 1996년도 춘계공동학술대회논문집; 공군사관학교, 청주; 26-27 Apr. 1996
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• pp.83-86
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• 1996

In this paper we study the problem of augmenting a physical network to improve the topology for new survivable network architectures. We are given a graph G=(V,E,F), where V is a set of nodes that represents transmission systems which be interconnected by physical links, and E is a collection of edges that represent the possible pairs of nodes between which a direct transmission link can be placed. F, a subset of E is defined as a set of the existing direct links, and E/F is defined as a set of edges for the possible new connection. The cost of establishing network $N_{H}$=(V,H,F) is defined by the sum of the costs of the individual links contained in new link set H. We call that $N_{H}$=(V,H,F) is feasible if certain connectivity constrints can be satisfied in $N_{H}$=(V,H,F). The computational goal for the suggested model is to find a minimum cost network among the feasible solutions. For a k edge (node) connected component S .subeq. F, we charactrize some optimality conditions with respect to S. By this characterization we can find part of the network that formed by only F-edges. We do not need to augment E/F edges for these components in an optimal solution. Hence we shrink the related component into a node. We study some good primal heuristics by considering construction and exchange ideas. For the construction heuristics, we use some greedy methods and relaxation methods. For the improvement heuristics we generalize known exchange heuristics such as two-optimal cycle, three-optimal cycle, pretzel, quezel and one-optimal heuristics. Some computational experiments show that our heuristic is more efficient than some well known heuristics.stics.

• 한국전자파학회논문지
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• 제26권6호
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• pp.593-596
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• 2015

본 논문은 무선전력전송 시스템에 활용할 수 있도록 낮은 드레인 전압에서 높은 효율을 가지는 class E 전력증폭기를 설계하였다. 붕괴전압이 40 V인 Si MOSFET을 이용하여 드레인 바이어스 전압이 12.5 V인 13.56 MHz 전력증폭기를 설계하였다. 출력 전력 및 효율을 개선하기 위하여 품질계수가 우수한 솔레노이드 인덕터를 제작하여 출력 정합회로에 사용하였다. 발진 방지와 간단한 회로 구성을 위하여 인덕터와 저항으로 입력 정합회로를 구성하였다. 측정 결과, 제작된 전력증폭기는 13.56 MHz에서 38.6 dBm의 출력전력과 16.6 dB의 전력이득, 그리고 89.3 %의 높은 전력부가효율을 보였다.