• Title/Summary/Keyword: E.A.V.

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Competitive Adsorption of CO2 and H2O Molecules on the BaO (100) Surface: A First-Principle Study

  • Kwon, Soon-Chul;Lee, Wang-Ro;Lee, Han-Na;Kim, J-Hoon;Lee, Han-Lim
    • Bulletin of the Korean Chemical Society
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    • v.32 no.3
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    • pp.988-992
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    • 2011
  • $CO_2$ adsorption on mineral sorbents has a potential to sequester $CO_2$. This study used a density functional theory (DFT) study of $CO_2$ adsorption on barium oxide (BaO) in the presence of $H_2O$ to determine the role of $H_2O$ on the $CO_2$ adsorption properties on the ($2{\times}2$; $11.05\;{\AA}{\times}11.05\;{\AA}$) BaO (100) surface because BaO shows a high reactivity for $CO_2$ adsorption and the gas mixture of power plants generally contains $CO_2$ and $H_2O$. We investigated the adsorption properties (e.g., adsorption energies and geometries) of a single $CO_2$ molecule, a single $H_2O$ molecule on the surface to achieve molecular structures and molecular reaction mechanisms. In order to evaluate the coordinative effect of $H_2O$ molecules, this study also carried out the adsorption of a pair of $H_2O$ molecules, which was strongly bounded to neighboring (-1.91 eV) oxygen sites and distant sites (-1.86 eV), and two molecules ($CO_2$ and $H_2O$), which were also firmly bounded to neighboring sites (-2.32 eV) and distant sites (-2.23 eV). The quantum mechanical calculations show that $H_2O$ molecule does not influence on the chemisorption of $CO_2$ on the BaO surface, producing a stable carbonate due to the strong interaction between the $CO_2$ molecule and the BaO surface, resulting from the high charge transfer (-0.76 e).

Photocurrent Study on the Splitting of the Valence Band and Growth of $CdIn_2Te_4$ Single Crystal by Bridgman method (Bridgman법에 의해 성장된 $CdIn_2Te_4$ 단결정의 가전자 갈라짐에 대한 광전류 연구)

  • Baek, Seung-Nam;Hong, Kwang-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.347-351
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    • 2003
  • A p-$CdIn_2Te_4$ single crystal has been grown by the Bridgman method without a seed crystal in a tree-stage vertical electric furnace. From photocurrent measurements, it was found that three peaks, A, B, and C, corresponded to an intrinsic transition due to the band-to-band transition from the valence band states ${\Gamma}_7(A),\;{\Gamma}_6(B),\;and\;{\Gamma}_7(C)$ to the conduction band state ${\Gamma}_6$, respectively. Also, the valence band splitting of the $CdIn_2Te_4$ crystal has been confirmed by photocurrent spectroscopy. The crystal field splitting and the spin orbit splitting were obtained to be 0.2360 and 0.1119 eV, respectively. Also, the temperature dependence of the band gap energy of the $CdIn_2Te_4$ crystal has been driven as the following equation of $E_g(T)\;=E_g(0)\;-\;(9.43\;{\times}\;10^{-3})T^2/(2676\;+\;T)$. In this equation, the Eg(0) was estimated to be 1.4750, 1.7110, and 1.8229 eV at the valence band state A, B, and C, respectively. The band gap energy of the p-$CdIn_2Te_4$ at room temperature was determined to be 1.2023 eV.

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Design of a On-chip LDO regulator with enhanced transient response characteristics by parallel error amplifiers (병렬 오차 증폭기 구조를 이용하여 과도응답특성을 개선한 On-chip LDO 레귤레이터 설계)

  • Son, Hyun-Sik;Lee, Min-Ji;Kim, Nam Tae;Song, Han-Jung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.16 no.9
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    • pp.6247-6253
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    • 2015
  • This paper presents the transient-response improved LDO regulator based on parallel error amplifiers. The proposed LDO regulator consists of an error amplifier (E/A1) which has a high gain and narrow bandwidth and a second amplifier (E/A2) which has low gain and wide bandwidth. These amplifiers are in parallel structure. Also, to improve the transient-response properties and slew-rate, some circuit block is added. Using pole-splitting technique, an external capacitor is reduced in a small on-chip size which is suitable for mobile devices. The proposed LDO has been designed and simulated using a Megna/Hynix $0.18{\mu}m$ CMOS parameters. Chip layout size is $500{\mu}m{\times}150{\mu}m$. Simulation results show 2.5 V output voltage and 100 mA load current in an input condition of 2.7 V ~ 3.3 V. Regulation Characteristic presents voltage variation of 26.1 mV and settling time of 510 ns from 100mA to 0 mA. Also, the proposed circuit has been shown voltage variation of 42.8 mV and settling time of 408 ns from 0 mA to 100 mA.

A Study of Nerve Conduction Velocity of Normal Adults (정상성인의 신경전도속도에 관한 연구)

  • Choi, Kyoung-Chan;Hah, Jung-Sang;Byun, Yeung-Ju;Park, Choong-Suh;Yang, Chang-Heon
    • Journal of Yeungnam Medical Science
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    • v.6 no.1
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    • pp.151-163
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    • 1989
  • Nerve conduction studies help delineate the extent and distribution of the neural lesion. The nerve conduction was studied on upper(median, ulnar and radial nerves) and lower(personal, posterior tibial and sural nerves) extremities in 83 healthy subjects 23 to 66 years of age. and normal values were established(Table 1). The mean motor terminal latency (TL) were : median. 3.6(${\pm}0.6$)milliseconds ; ulnar. 2.9(${\pm}0.5$) milliseconds ; radial nerve. 2.3(${\pm}0.4$) milliseconds. Mean motor nerve conduction velocity(MNCV) along distal and proximal segments: median. 61.2(${\pm}9.1$) (W-E) and 57.8(${\pm}13.2$) (E-Ax) meters per second ; ulnar. 63.7(${\pm}9.1$) (W-E) and 50.(${\pm}10.0$) meters per second. Mean sensory nerve conduction velocity(SNCV) : median. 34.7(${\pm}6.7$) (F-W), 63.7(${\pm}7.1$) (W-E) and 62.8(${\pm}12.3$) (E-Ax)meters per second ; ulnar. 38.0(${\pm}6.7$)(F-W), 63.4(${\pm}7.5$) (W-E) and 57.0(${\pm}10.1$) (E-Ax)meters per second ; radial, 45.3(${\pm}6.8$) (F-W) and 64.2(${\pm}11.0$) (W-E) meters per second ; sural nerve, 43.4(${\pm}6.1$) meters per second. The amplitudes of action potential and H-reflex were also standardized. Mean H latency was 28.4(${\pm}3.2$) milliseconds. And. the fundamental principles, several factors altering the rate of nerve conduction and clinical application of nerve stimulation techniques were reviewed.

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Hexon and fiber gene changes in an attenuated fowl adenovirus isolate from Malaysia in embryonated chicken eggs and its infectivity in chickens

  • Sohaimi, Norfitriah M.;Bejo, Mohd H.;Omar, Abdul R.;Ideris, Aini;Isa, Nurulfiza M.
    • Journal of Veterinary Science
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    • v.19 no.6
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    • pp.759-770
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    • 2018
  • Fowl adenovirus (FAdV) is distributed worldwide and causes economic losses in the poultry industry. The objectives of this study were to determine the hexon and fiber gene changes in an attenuated FAdV isolate from Malaysia in specific pathogen-free chicken embryonated eggs (SPF CEE) and its infectivity in commercial broiler chickens. SPF CEE were inoculated with 0.1 mL FAdV inoculum via the chorioallantoic membrane (CAM) for 20 consecutive passages. The isolate at passage 20 (E20), with a virus titer of $10^{8.7}TCID_{50}/mL$ ($TCID_{50}$, 50% tissue culture infective dose), was inoculated (0.5 mL) into one-day-old commercial broiler chicks either via oral or intraperitoneal routes. The study demonstrated that 100% embryonic mortality was recorded from E2 to E20 with a delayed pattern at E17 onwards. The lesions were confined to the liver and CAM. Substitutions of amino acids in the L1 loop of hexon at positions 49 and 66, and in the knob of fiber at positions 318 and 322 were recorded in the E20 isolate. The isolate belongs to serotype 8b and is non-pathogenic to broiler chickens, but it is able to induce a FAdV antibody titer. It appears that molecular changes in the L1 loop of hexon and the knob of fiber are markers for FAdV infectivity.

SOME NEW RESULTS ON POWER CORDIAL LABELING

  • C.M. BARASARA;Y.B. THAKKAR
    • Journal of applied mathematics & informatics
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    • v.41 no.3
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    • pp.615-631
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    • 2023
  • A power cordial labeling of a graph G = (V (G), E(G)) is a bijection f : V (G) → {1, 2, ..., |V (G)|} such that an edge e = uv is assigned the label 1 if f(u) = (f(v))n or f(v) = (f(u))n, For some n ∈ ℕ ∪ {0} and the label 0 otherwise, then the number of edges labeled with 0 and the number of edges labeled with 1 differ by at most 1. In this paper, we investigate power cordial labeling for helm graph, flower graph, gear graph, fan graph and jewel graph as well as larger graphs obtained from star and bistar using graph operations.

POWER CORDIAL GRAPHS

  • C.M. BARASARA;Y.B. THAKKAR
    • Journal of applied mathematics & informatics
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    • v.42 no.2
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    • pp.445-456
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    • 2024
  • A power cordial labeling of a graph G = (V (G), E(G)) is a bijection f : V (G) → {1, 2, ..., |V (G)|} such that an edge e = uv is assigned the label 1 if f(u) = (f(v))n or f(v) = (f(u))n, for some n ∈ ℕ ∪ {0} {0} and the label 0 otherwise, then the number of edges labeled with 0 and the number of edges labeled with 1 differ by at most 1. In this paper, we study power cordial labeling and investigate power cordial labeling for some standard graph families.

Fabrications and Characterization of High Temperature, High Voltage Ni/6H-SiC and Ni/4H-SiC Schottky Barrier Diodes (고온, 고전압 Ni/4H-SiC 및 Ni/6H-SiC Schottky 다이오드의 제작 및 전기적 특성 연구)

  • Lee, Ho-Seung;Lee, Sang-Wuk;Shin, Dong-Hyuk;Park, Hyun-Chang;Jung, Woong
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.11
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    • pp.70-77
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    • 1998
  • Ni/SiC Schottky diodes have been fabricated using epitaxial 4H-SiC and 6H-SiC wafers. The epitaxial n-type layers were grown on $n^{+}$ substrates, with a doping density of 4.0$\times$10$^{16}$ c $m^{-3}$ and a thickness of 10${\mu}{\textrm}{m}$. Oxide-termination has been adopted in order to obtain high breakdown voltage and low leakage current. The fabricated Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes show excellent rectifying characteristics up to the measured temperature range of 55$0^{\circ}C$. In case of oxide-terminated Schottky barrier diodes, breakdown voltage of 973V(Ni/4H-SiC) and 920V(Ni/6H-SiC), and a very low leakage current of less than 1nA at -800V has been observed at room temperature. On non-terminated Schottky barrier diodes, breakdown voltages were 430V(Ni/4H-SiC) and 160v(Ni/6H-SiC). At room temperature, SBH(Schottky Barrier Height), ideality factor and specific on-resistance were 1.55eV, 1.3, 3.6$\times$10$^{-2}$ $\Omega$.$\textrm{cm}^2$ for Ni/4H-SiC Schottky barrier diodes, and 1.24eV, 1.2, 2.6$\times$10$^{-2}$$\Omega$.$\textrm{cm}^2$/ for Ni/SH-SiC Schottky barrier diodes, respectively. These results show that both Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes are very promising for high-temperature and high power applications.s..

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Synthesis and Photovoltaic Properties of Low Band Gap π-Cojugated Polymer Based on 4,7-Di-thiophen-2-yl-benzo[1,2,5]thiadiazole (4,7-Di-thiophen-2-yl-benzo[1,2,5]thiadiazole을 기본으로 한 고분자의 합성 및 광전변환 특성)

  • Shin, Woong;You, Hyeri;Park, Jeong Bae;Park, Sang Jun;Jeong, Mi Seon;Moon, Myung-Jun;Kim, Joo Hyun
    • Applied Chemistry for Engineering
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    • v.21 no.2
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    • pp.137-141
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    • 2010
  • Poly [4,7-Di-thiophen-2-yl-benzo(1,2,5)thiadiazole]-alt-1,4-bis(dodecyloxy)-2,5-divinylbenzene (PPVTBT) was synthesized by the Heck coupling reaction between 4,7-Di-thiophen-2-yl-benzo(1,2,5)thiadiazole and 1,4-bis(dodecyloxy)-2,5-divinylbenzene. The maximum absorption and band gap of PPVTBT were 550 nm and 1.74 eV, respectively. The HOMO and LUMO energy level of PPVTBT were -5.24 eV and -3.50 eV, respectively. The photovoltaic device based on the blend of PPVTBT and (6)-1-(3-(methoxycarbonyl)propyl)-{5}-1-phenyl[5,6]-$C_{61}$ (PCBM) (1 : 6 by weight ratio) was fabricated. The efficiency of device was 0.16%. The short circuit current density (Jsc), fill factor (FF) and open-circuit voltage (Voc) of the device was $0.74mA/cm^{2}$, 31% and 0.71 V, respectively, under AM 1.5 G and 1 sun condition ($100mA/cm^{2}$).

The Four Color Algorithm (4-색 알고리즘)

  • Lee, Sang-Un
    • Journal of the Korea Society of Computer and Information
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    • v.18 no.5
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    • pp.113-120
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    • 2013
  • This paper proposes an algorithm that proves an NP-complete 4-color theorem by employing a linear time complexity where $O(n)$. The proposed algorithm accurately halves the vertex set V of the graph $G=(V_1,E_1)$ into the Maximum Independent Set (MIS) $\bar{C_1}$ and the Minimum Vertex Cover Set $C_1$. It then assigns the first color to $\bar{C_1}$ and the second to $\bar{C_2}$, which, along with $C_2$, is halved from the connected graph $G=(V_2,E_2)$, a reduced set of the remaining vertices. Subsequently, the third color is assigned to $\bar{C_3}$, which, along with $C_3$, is halved from the connected graph $G=(V_3,E_3)$, a further reduced set of the remaining vertices. Lastly, denoting $C_3$ as $\bar{C_4}$, the algorithm assigns the forth color to $\bar{C_4}$. The algorithm has successfully obtained the chromatic number ${\chi}(G)=4$ with 100% probability, when applied to two actual map and two planar graphs. The proposed "four color algorithm", therefore, could be employed as a general algorithm to determine four-color for planar graphs.