• Proceedings of the KIEE Conference
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• summer
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• pp.192-194
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• 2004

At present, application of PSS/E input data for power flow , stability and fault analysis consist of only 154kV and over data(except 22.9kV data). 22.9kV(5.C) Static Condenser is in operation and installation at 22.9kV Bus of 154kV Substation. however, we assume that 22.9kV 5.C install at 154kV Bus. so, we need to study and search about critical limit for 154kV Bus standard operating Voltage according to 22.9kV 5.C Modeling Site by PSS/E Ver28

• The Korean Journal of Ceramics
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• v.2 no.3
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• pp.131-136
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• 1996

The electrical conductivity of polycrystalline TiO2 samples was measured over the temperature range 1000°-1400℃ and from 0.21 to 10-16 atm of oxygen. Based on the excellent fit observed between the theoretically derived relatin σ3=(Aσ+B)Po2-1/2+D'σ2 and the experimental conductivity data, the nonstoichimetric defect structure of TiO2 was rationalized in terms of a defect model involving quasi-free electrons and both singly and doubly ionized oxygen vacancies. The standard enthalpy of formation for the following defect reactions in TiO2. (a) OO={{{{ { 1} over {2 } }}O2(g)+VO+e'; Δ{{{{ { H}`_{o } ^{a } }}=5.15(eV) (b) OO={{{{ { 1} over {2 } }}O2(g)+VO+2e'; Δ{{{{ { H}`_{0 } ^{ a} }}=6.30(eV) (c) VO=VO+e'; Δ{{{{ { H}`_{0 } ^{a } }}=1.15(eV) were determined from the temperature dependence of A and B obtained from the above relation and from the experimental expression between the electron mobility and temperature. The electrical conductivity of TiO2 in air below approximately 950℃ appears, on the basis of this investigation, to be impurity controlled due to the presence of aluminum rather than intrinsic conduction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.5
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• pp.368-373
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• 2010

In this study, we have investigated the effects of Cr dopant on the bulk trap levels and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) varistor using admittance spectroscopy and dielectric functions (such as $Z^*,\;Y^*,\;M^*,\;{\varepsilon}^*$, and $tan{\delta}$). Admittance spectra show more than two bulk traps of $Zn_i$ and $V_o$ probably in different ionization states in ZnO-$Bi_2O_3-Cr_2O_3$ (ZBCr) system. Three kinds of temperature-dependant activation energies ($E_{bt}'s$) were calculated as 0.11~0.14 eV of attractive coulombic center, 0.16~0.17 eV of $Zn_{\ddot{i}}$, and 0.33 eV of $V_o^{\cdot}$ as dominant bulk defects. The grain boundaries of ZBCr could be electrochemically divided into two types as a sensitive to ambient oxygen i.e. electrically active one and an oxygen-insensitive i.e. electrically inactive one. The grain boundaries were electrically single type under 460 K (equivalent circuit as parallel $R_{gb1}C_{gb1}$) but separated as double one ($R_{gb1}C_{gb1}-R_{gb2}C_{gb2}$) over 480 K. It is revealed that the dielectric functions are very useful tool to separate the overlapped bulk defect levels and to characterize the electrical properties of grain boundaries.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.130-135
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• 2000

We have analyzed characteristics for the structure of $Al_{0.25}/Ga_{0.75}/As/In_{0.15}/Ga_{0.85}$/AS/GaAS pseudomorphic high electron mobility transistor (PHEMT) by photoluminescence (PL) and photoreflectance (PR) measurements. By the PL measurement at 10 K, we observed el-hl transition peak at 1.322 eV and e2-hl transition peak at 1.397 eV in the InGaAs quantum well. We calculated value of 23 meV, the difference between the first energy level and the second energy level of a valence band by dependence of temperatures. Also, (e2-h2) transition signal was observed at 300 K by PR measurement. From the PR measurement, we recognized that the transition was dominated the second energy level of conduction band than the first energy level of conduction band due to band filling. The other hand, PL signal of the first energy level of conduction band was dominated because of the electron screening effect.

• Journal of Life Science
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• v.9 no.1
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• pp.106-110
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• 1999

Lipopolysaccharide(LPS) from Vibrio vulnificus was purified, the fatty acid composition was analyzed, and Limulus gelation activity and lethal toxic activity were tested in order to investigate the cause of cytotoxicity by V. vutnificus. These results were compared to those of Escherichia coli LPS and Salmonella typhimurium LPS. LPS from V. vulnificus had a different fatty acid composition from those of E coli and S. typhimurium. The major fatty arid from each LPS was lauric acid for E. coli, rapric acid for S. typhimurium, and myristic acid for V. vulnificus. The Limulus gelation activities of three LPSs were the same(0.1ng/ml) and the lethal toxicity in BALB/c mouse of V vulnificus LPS was similar to those of E. coli LPS and S. typhimurium LPS. Such factor as exotoxin need to be considered to be the cause of cytotoxicity by V. vulnificus LPS.

• Proceedings of the Zoological Society Korea Conference
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• 1995.10b
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• pp.120-120
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• 1995

The total size of the pF AR1, a genomic clone of Frankia FaCI, was estimated to be about 44Kb by summation of the individual fragment length generated by single or double restriction enzymes. Southern hybridization analyses with Azotobacter vinelandii nif-genes as probes and partial sequencing analyses of the subclones revealed that organization of the nif-gene in the FaCI strain was nifV, H, D, K, E, N, X, W, B. The organization of the structural genes for nitrogenase is the same in this Frankia strain as it is in most other nitrogen-fixing prokaryotes but the positioning of the nifV-like gene relative to the nifHDK cluster differs. A consensus nif-promoter-like sequence, found at 5' of nifH, was not detected upstream of the niJV-like gene. nifV-like gene contained a ORF of 1206 NT encoding 401 amino acids. The nucleotide sequence and deduced amino acid sequence of the gene exhibit homology value of 65% and 41% with that from A vinelandii, respectively. The putative Shine-Dargamo sequences were present preceding nitK, nifH, D, K, and nifE, and in nitK gene putative start codon GTG was detected instead of A TG. The nucleotide and amino acid sequence of niIK of FaCI showed 82% and 76% homolgy with those of Frankia HFPCc 13, respectively. Amino acid sequence of niIK showed 69% and 61% homology with those of A vinelandii, Klebsiella pnewnoniae, respectively, while that of nifE 73% and 71%, respecti vely.i vely.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.44-47
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• 1997

In spite of the addtion of Zn, a high quality of Zn-doped GaN film were prepared. The growth rates of Zn-doped GaN films were varied from 0.14${\mu}{\textrm}{m}$/min to 0.05${\mu}{\textrm}{m}$/min according to the amount of Zn incorporated, The smallest value of the FWHM of x-ray rocking curve was 407 arcsec. The Zn-related Photoluminescence emission peaks which occurred at 2.927 and 2.824 eV shifted toward the low energy region by increasing Zn partial pressures. It was compared between the intensities of D-A pair (3.259eV) and that of the exciton bound to acceptor band(E$_{x-A}$=3.449eV).).

• Journal of applied mathematics & informatics
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• v.40 no.1_2
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• pp.117-132
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• 2022

Reverse edge magic(REM) labeling of the graph G = (V, E) is a bijection of vertices and edges to a set of numbers from the set, defined by λ : V ∪ E → {1, 2, 3, …, |V| + |E|} with the property that for every xy ∈ E, constant k is the weight of equals to a xy, that is λ(xy) - [λ(x) + λ(x)] = k for some integer k. We given the construction of REM labeling for the Cartesian Product, Unions of Braids and Unions of Triangular Belts. The Kotzig array used in this paper is the 3 × (2r + 1) kotzig array. we test the konow results about REM labelling that are related to the new results we found.

• Proceedings of the Korean Operations and Management Science Society Conference
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• 1996.04a
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• pp.83-86
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• 1996

In this paper we study the problem of augmenting a physical network to improve the topology for new survivable network architectures. We are given a graph G=(V,E,F), where V is a set of nodes that represents transmission systems which be interconnected by physical links, and E is a collection of edges that represent the possible pairs of nodes between which a direct transmission link can be placed. F, a subset of E is defined as a set of the existing direct links, and E/F is defined as a set of edges for the possible new connection. The cost of establishing network $N_{H}$=(V,H,F) is defined by the sum of the costs of the individual links contained in new link set H. We call that $N_{H}$=(V,H,F) is feasible if certain connectivity constrints can be satisfied in $N_{H}$=(V,H,F). The computational goal for the suggested model is to find a minimum cost network among the feasible solutions. For a k edge (node) connected component S .subeq. F, we charactrize some optimality conditions with respect to S. By this characterization we can find part of the network that formed by only F-edges. We do not need to augment E/F edges for these components in an optimal solution. Hence we shrink the related component into a node. We study some good primal heuristics by considering construction and exchange ideas. For the construction heuristics, we use some greedy methods and relaxation methods. For the improvement heuristics we generalize known exchange heuristics such as two-optimal cycle, three-optimal cycle, pretzel, quezel and one-optimal heuristics. Some computational experiments show that our heuristic is more efficient than some well known heuristics.stics.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.6
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• pp.593-596
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• 2015

In this paper, we design a high efficiency class E power amplifier operating at low drain bias voltage for wireless power transfers. A 13.56 MHz power amplifier is designed at drain bias voltage of 12.5 V using Si MOSFET with the breakdown voltage of 40 V. High quality-factor solenoidal inductor is designed and fabricated for use in output matching circuit to improve output power and efficiency. Input matching circuit simply consists of resistor and inductor to reduce the circuit area and improve the stability. The fabricated power amplifier shows the measured output power of 38.6 dBm with the gain of 16.6 dB and power added efficiency of 89.3 % at 13.56 MHz.