• The Journal of Korea Institute of Information, Electronics, and Communication Technology
• /
• v.15 no.2
• /
• pp.144-151
• /
• 2022

In this paper, a 1.5V 256kb eFlash memory IP with low area DC-DC converter is designed for battery application. Therefore, in this paper, 5V NMOS precharging transistor is used instead of cross-coupled 5V NMOS transistor, which is a circuit that precharges the voltage of the pumping node to VIN voltage in the unit charge pump circuit for the design of a low-area DC-DC converter. A 5V cross-coupled PMOS transistor is used as a transistor that transfers the boosted voltage to the VOUT node. In addition, the gate node of the 5V NMOS precharging transistor is made to swing between VIN voltage and VIN+VDD voltage using a boost-clock generator. Furthermore, to swing the clock signal, which is one node of the pumping capacitor, to full VDD during a small ring oscillation period in the multi-stage charge pump circuit, a local inverter is added to each unit charge pump circuit. And when exiting from erase mode and program mode and staying at stand-by state, HV NMOS transistor is used to precharge to VDD voltage instead of using a circuit that precharges the boosted voltage to VDD voltage. Since the proposed circuit is applied to the DC-DC converter circuit, the layout area of the 256kb eFLASH memory IP is reduced by about 6.5% compared to the case of using the conventional DC-DC converter circuit.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.08a
• /
• pp.92-96
• /
• 2002

A silver indium sulfide $(AgInS_{2})$ epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_{2}$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-ta-band transition. The valence band splitting of $AgInS_{2}$ was investigated by means of the photocurrent measurement. The crystal field splitting, $\Delta_{cr}$, and the spin orbit splitting, $\Delta_{so.}$ have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_{g}(T)$, was determined.

• Proceedings of the Optical Society of Korea Conference
• /
• 1991.06a
• /
• pp.18-21
• /
• 1991

청록색 영역에서 발진하는 XeF(C$\longrightarrow$A)엑사이머 레이저 여기용 2.56MeV 전자빔 가속기를 개발하였다. 대출력 전자빔 가속기는 $\pm$80kV로 충전하는 Marx Generator를 동축구조로 꾸밈으로서 낮은 임퍼던스와 인덕턴스를 유지할 수 있었고, 빠른 전압상승과 유사구형파 출력을 얻을 수 있었다. 본 연구에서는 대출력 전자빔가속기 (2.56 MeV, 2.2KJ)의 파라메터와 동작특성, 전압측정 등을 기술한다.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.38 no.10
• /
• pp.678-686
• /
• 2001

Origins for the transconductance dispersion and the gate leakage current in a GaAs metal semiconductor field effect transistor were found using capacitance deep-level transient spectroscopy (DLTS) measurements. In DLTS spectra, we observed two surface states with thermal activation energies of 0.65 $\times$ 0.07 eV and 0.88 $\times$ 0.04 eV and an electron trap EL2 with thermal activation energy of 0.84 $\times$ 0.01 eV. Transconductance was decreased in the frequency range of 5.5 Hz ~ 300 Hz. The transition frequency shifted to higher frequencies with the increase of temperature and the activation energy for the change of the transition frequency was determined to be 0.66 $\times$ 0.02 eV. From the measurements of the gate leakage current as a function of the device temperature, the forward and reverse currents are coincident with each other below gate voltages lower than 0.15 V, namely Ohmic behavior between gate and source/drain electrodes. The activation energy for the conductance of electrons on the surface of MESFET was 0.63 $\times$ 0.01 eV. Comparing activation energies obtained by different measurements, we found surface states H1 caused the transconductance dispersion and the fate leakage current.

• Korean Journal of Clinical Laboratory Science
• /
• v.39 no.2
• /
• pp.113-121
• /
• 2007

Hearing loss is a common congenital disorder that is frequently associated with mutations in the Cx26 gene (GJB2). Recently, the mutation analysis of GJB2 has been used in a newborn screening test for the detection of hearing impairment. Population-based studies should be performed before the application of genetic testing for the identification of deaf newborns. In this study, 8 positions of GJB2 mutations-including 35delG, 167delT, 235delC, V27I, V37I, M34T, E114G, and I203T-were analyzed using PCR-direct sequencing in a total of 437 healthy Korean neonates. DNAs from dried blood spots were extracted using a commercial DNA extraction kit. The PCR-amplified products (783 bps) of the GJB2 gene were detected using 2% agarose gel electrophoresis and subjected to direct sequencing. The sequences were compared with those in the GenBank database by using the BLAST program. In this study, 5 GJB2 mutations -including V27I (79G>A), V37I (109G>A), E114G (341A>G), I203T (608T>C), and 235delC- were found. Of the 437 neonate samples, 301 subjects showed GJB2 mutations (68.9%, 301/437). The V27I mutation was found in 271 subjects and was the most frequent (62.0%, 271/437). The E114G, I203T and V37I mutations were shown in 146, 17 and 14 subjects, respectively. The 235delC mutation was found in 1 subject. The E114G mutation was frequently accompanied by the V27I mutation. V27I/E114G (97.2%, 143/147) was the most common double mutation and 3 subjects had the double mutation V27I/I203T. A triple mutation, V27I/E114G/I203T, was found in 1 subject. In conclusion, PCR-direct sequencing is a convenient tool for the rapid detection of GJB2 mutations and this data might provide information for the genetic counseling of the GJB2 gene.

• Transactions on Electrical and Electronic Materials
• /
• v.8 no.6
• /
• pp.260-264
• /
• 2007

We have studied stability in organic light-emitting diode depending on buffer layer and cathode. A transparent electrode of indium-tin-oxide(ITO) was used as an anode. An electron injection energy barrier into organic material is different depending on a work function of cathodes. Theoretically, the energy barriers for the electron injection are 1.2 eV, -0.1 eV, and 0.0 eV for Al, LiAl, and LiF/Al at 300 K, respectively. We considered the cases that holes are injected to organic light-emitting diode. The hole injection energy barrier is about 0.7 eV between ITO and TPD without buffer layer. For hole-injection buffer layers of CuPc and PEDOT:PSS, the hole injection energy barriers are 0.4 eV and 0.5 eV, respectively. When the buffer layer of CuPc and PEDOT:PSS is existed, we observed the effects of hole injection energy barrier, and a reduction of operating-voltage. However, in case of PVK buffer layer, the hole injection energy barrier becomes high(1.0 eV). Even though the operating voltage becomes high, the efficiency is improved. A device structure for optimal lifetime condition is ITO/PEDOT:PSS/TPD/$Alq_3$/LiAl at an initial luminance of $300cd/m^2$.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.6 no.2
• /
• pp.220-228
• /
• 1996

CdTe single crystals were grown by vertical Bridgman method using double furnace with two siliconit heating elements. When the peak temperature of the upper furnace was fixed at $1150^{\circ}C$ and that of the lower furnace was $800^{\circ}C$, the temperature gradient was about $22.5^{\circ}C$/cm. The lattice constant $a_0$ was $6.482\AA$ from the X-ray diffraction and the band gap energy obtained from the optical absorption experiment at room temperature was 1.478 eV. PL spectrum showed that the bound exciton emission peak was resolved into ($A^0,X$) (1.5902, 1.5887 eV), ($h\;D^0$) (1.5918 eV) and ($D^0,X$ (1.5928, 1.5932 eV), and we have also calculated binding energy and ionization energy of the neutral donor and acceptor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.2
• /
• pp.83-86
• /
• 2013

The optical properties of ZnO thin film have been studied using photoluminescence(PL) spectroscopy with the change of sample temperatures from 10 K to 290 K. The spectrum at 10 K showed the characteristic emission lines of ZnO which were as follows: free exciton(FX) at 3.369 eV, neutral donor-bound exciton($D^0X$) at 3.360 eV, two electron satellite(TES) at 3.332 eV, $D^0X$-1LO at 3.289 eV, and donor-acceptor pair(DAP) transiton at 3.217 eV. From the spectral evolution with temperatures, two features could be identified as temperature went higher: (1) the bound excitons changed gradually into free excitons, (2) DAP turned into free electron-acceptor transition(e,$A^0$). The PL intensity of free exciton increased with the increase of temperatures, which was accompanied by the decrease of the intensity of bound excitions and bound excition-related transitons such as TES and $D^0X$-1LO. At 80 K DAP transition disappeared, while (e,$A^0$) transition started to appear at 30 K.

• Proceedings of the SAREK Conference
• /
• 2009.06a
• /
• pp.284-292
• /
• 2009

The stack-effect in high-rise buildings in winter causes many problems such as difficulties in opening or closing doors, infiltration, energy loss, noise and fire protection. Stack effect is influenced by temperature difference between the interior and exterior of building and the height of building. As an attenuation method for stack effect, the architectural methods are generally used. However, as though architectural methods were fully adopted, the problems are reported as ever in tall building. In this study, a new method to reduce stack effect will be suggested. As an active control method against the stack effect, E/V shaft natural cooling method is suggested. In this paper, the concept of E/V shaft natural cooling system and its reduction performance of stack effect by simulation and field measurement will be reported.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.18 no.10
• /
• pp.1157-1162
• /
• 2007

In this paper, E-TDLNN(Expanded-Tapped Delay Line Neural Network) method is suggested to make the model of power amplifier effectively. This method is the one for making the model of power amplifier through the study in neural network to the target value, the measured output spectrum of power amplifier, after adding the external value factor, gate bias, as an invariant input to the TDLNN method which suggested the memory effect of power amplifier effectively. To prove the validity of suggested method, the data at 2 points, 3.45 V and 3.50 V of gate bias range $3.4{\sim}3.6V$ with the 0.01 V step change, are studied and the predicted results at the gate bias 3.40 V, 3.48 V, 3.53 V and 3.60 V shows good coincidence with the measured values.