• Title/Summary/Keyword: E.A.V.

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Analysis of Differential BRAFV600E Mutational Status in Papillary Thyroid Carcinoma

  • Jang, Hye-Lim;Kim, Tai-Jeon;Shin, Jae-Ho;Kim, Chul
    • Korean Journal of Clinical Laboratory Science
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    • v.44 no.2
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    • pp.75-80
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    • 2012
  • Papillary thyroid carcinoma (PTC) is the most common thyroid cancer, accounting for 95% or more of malignancies in Korea. Recently, many thyroid cancers have been detected owing to the widespread use of ultrasonography in health surveillance. The objective of this study was to evaluate the association of known prognostic factors with the $BRAF^{V600E}$ mutation and its association features in Korean patients with papillary thyroid carcinomas. The $BRAF^{V600E}$ mutation was detected in 69.1% (256 of 370) of PTC cases. In univariate analysis, the $BRAF^{V600E}$ mutation was significantly associated with tumor size (p < 0.05) and sex. However, it was not significantly associated with other established risk factors, such as age, extrathyroidal extension, and lymph node metastasis. This finding supports the idea that the BRAF mutation plays a role in the early stage of PTC development. This relationship deserves further investigation to clarify whether $BRAF^{V600E}$ is a useful risk factor or prognostic marker for PTC.

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Study on barrier characteristics of STM tip/Viologen molecules and morphology (STM tip/Viologen 분자의 Barrier특성과 모폴로지 촉정)

  • Lee, Nam-Suk;Choi, Won-Suk;Qian, Dong-Jin;Kwon, Young-Soo
    • Proceedings of the KIEE Conference
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    • 2006.10a
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    • pp.91-92
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    • 2006
  • The electrical properties of viologen derivatives were studied in terms of the tunneling current characteristics on the length of the viologen derivatives using self-assembling techniques and ultra high vacuum scanning tunneling microscopy (UHV-STM). We fabricated the Au substrate were deposited by thermal evaporation system ($420^{\circ}C$. Self-assembled monolayers (SAMs) were prepared on Au (111), which had been thermally deposited onto freshly cleaved, heated mica. The Au substrate was exposed to a 1 mM solution of viologen derivatives in ethanol for 24 hours to form a monolayer. We measurement of the morphology on the single viologen molecules ($VC_{8}SH$, $VC_{10}SH$, $HSC_{8}VC_{8}SH$, and $HSC_{10}VC_{10}SH$). The current-voltage (I-V) and differential conductance (dl/dV-V) properties were measured while the electrical properties of the formed monolayer were scanned by using a STS. The effective barrier height of viologen derivatives ($VC_{8}SH$, $VC_{10}SH$, $HSC_{8}VC_{8}SH$, and $HSC_{10}VC_{10}SH$) were calculated to be 1.076 eV, 1.56 ${\pm}$ 0.3 eV, 1.85 eV, 2.28 eV, respectively.

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A Design of Level Converter with the Increased Acceptable Threshold Voltage Variations of GaAs E/D MESFETs (GaAs E/D MESFET의 염계전압 변동에 강한 레벨 변환회로의 설계)

  • 이창석;윤광준;박형무;마동성
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.11
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    • pp.1679-1685
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    • 1989
  • In this paper, a new design of GaAs level converter is proposed, and anlyzed wth the variation of the threshold voltage of E/D MESFETs. The threshold voltage ranges analyzed are -0.05V to 0.35V for enhancement type MESFETs and -0.3V to -0.7V for depletion type MESFETs. In this range, the variation of the input characteristics of the conventional level converter designed to convert the level of DCFL using Vss of -0.8V to that of -0.2V, is greather than 600mV, but of the level converter proposed here is less than 100mV.

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GROUP S3 MEAN CORDIAL LABELING FOR STAR RELATED GRAPHS

  • A. LOURDUSAMY;E. VERONISHA
    • Journal of applied mathematics & informatics
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    • v.41 no.2
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    • pp.321-330
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    • 2023
  • Let G = (V, E) be a graph. Consider the group S3. Let g : V (G) → S3 be a function. For each edge xy assign the label 1 if ${\lceil}{\frac{o(g(x))+o(g(y))}{2}}{\rceil}$ is odd or 0 otherwise. g is a group S3 mean cordial labeling if |vg(i) - vg(j)| ≤ 1 and |eg(0) - eg(1)| ≤ 1, where vg(i) and eg(y)denote the number of vertices labeled with an element i and number of edges labeled with y (y = 0, 1). The graph G with group S3 mean cordial labeling is called group S3 mean cordial graph. In this paper, we discuss group S3 mean cordial labeling for star related graphs.

A novel approach in voltage transient technique for the measurement of electron mobility and mobility-lifetime product in CdZnTe detectors

  • Yucel, H.;Birgul, O.;Uyar, E.;Cubukcu, S.
    • Nuclear Engineering and Technology
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    • v.51 no.3
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    • pp.731-737
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    • 2019
  • In this study, a new measurement method based on voltage transients in CdZnTe detectors response to low energy photon irradiations is applied to measure the electron mobility (${\mu}_e$) and electron mobility-lifetime product $({\mu}{\tau})_e$ in a CdZnTe detector. In the proposed method, the pulse rise times are derived from low energy photon response to 59.5 keV($^{241}Am$), 88 keV($^{109}Cd$) and 122 keV($^{57}Co$) ${\gamma}-rays$ for the irradiation of the cathode surface at each detector for different bias voltages. The electron $({\mu}{\tau})_e$ product was then determined by measuring the variation in the photopeak amplitude as a function of bias voltage at a given photon energy using a pulse-height analyzer. The $({\mu}{\tau})_e$ values were found to be $(9.6{\pm}1.4){\times}10^{-3}cm^2V^{-1}$ for $1000mm^3$, $(8.4{\pm}1.6){\times}10^{-3}cm^2V^{-1}$ for $1687.5mm^3$ and $(7.6{\pm}1.1){\times}10^{-3}cm^2V^{-1}$ for $2250mm^3$ CdZnTe detectors. Those results were then compared with the literature $({\mu}{\tau})_e$ values for CdZnTe detectors. The present results indicate that, the electron mobility ${\mu}_e$ and electron $({\mu}{\tau})_e$ values in CdZnTe detectors can be measured easily by applying voltage transients response to low energy photons, utilizing a fast signal acquisition and data reduction and evaluation.

Optical Preperties of HgS and HgS : Co Crystals and Films (HgS 및 HgS : Co 결정과 박막의 광학적 특성)

  • 박복남;방태환;김종룡;장우선;최성휴
    • Journal of the Korean Vacuum Society
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    • v.5 no.3
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    • pp.213-217
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    • 1996
  • HgS and HgS: Co crystals and films grown by the slow cooling and the chemical bath deposition method were used to measure their crystal structure and their optical absorption spectra. HgS and HgS: Co crystals are hexagonal structure with the lattice constant $a_0=4.155{\AA}$, $c_0=9.505{\AA}$ for HgS and $a_0=4.148{\AA}$, $c_0=9.462{\AA}$ for HgS and $a_0=4.135{\AA}$, $c_0=9.442{\AA}$ for HgS: Co, respectively. The optical energy gap of these crystals are given as 2.040 eV for HgS and 1.900 eV for HgS: Co, and the optical energy gap of these films were 2.440 eV for HgS and 1.940 eV for HgS: Co at room temperature, respectively.

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ON THE SCHULTZ POLYNOMIAL AND HOSOYA POLYNOMIAL OF CIRCUMCORONENE SERIES OF BENZENOID

  • Farahani, Mohammad Reza
    • Journal of applied mathematics & informatics
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    • v.31 no.5_6
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    • pp.595-608
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    • 2013
  • Let G = (V, E) be a simple connected graph. The sets of vertices and edges of G are denoted by V = V (G) and E = E(G), respectively. In such a simple molecular graph, vertices represent atoms and edges represent bonds. The distance between the vertices $u$ and $v$ in V (G) of graph G is the number of edges in a shortest path connecting them, we denote by $d(u,v)$. In graph theory, we have many invariant polynomials for a graph G. In this paper, we focus on the Schultz polynomial, Modified Schultz polynomial, Hosoya polynomial and their topological indices of a molecular graph circumcoronene series of benzenoid $H_k$ and specially third member from this family. $H_3$ is a basic member from the circumcoronene series of benzenoid and its conclusions are base calculations for the Schultz polynomial and Hosoya polynomial of the circumcoronene series of benzenoid $H_k$ ($k{\geq}3$).

Deign of Small-Area Differential Paired eFuse OTP Memory for Power ICs (Power IC용 저면적 Differential Paired eFuse OTP 메모리 설계)

  • Park, Heon;Lee, Seung-Hoon;Jin, Kyo-Hong;Ha, Pan-Bong;Kim, Young-Hee
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.8 no.2
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    • pp.107-115
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    • 2015
  • In this paper, a small-area 32-bit differential paired eFuse OTP memory for power ICs is designed. In case of smaller number of rows than that of columns for the OTP memory cell array, a scheme for the cell array reducing the number of SL driver circuits requiring their larger layout areas by routing the SL (source line) lines supplying programming currents for eFuse links in the row direction instead of the column direction as well as a core circuit is proposed. In addition, to solve a failure of being blown for non-blown eFuse links by the electro-migration phenomenon, a regulated voltage of V2V ($=2V{\pm}0.2V$) is used to a RWL (read word line) driver circuit and a BL (bit line) pull-up driver circuit. The layout size of the designed 32-bit eFuse OTP memory is $228.525{\mu}m{\times}105.435{\mu}m$, which is confirmed to be 20.7% smaller than that of the counterpart using the conventional cell array routing, namely $197.485{\mu}m{\times}153.715{\mu}m$.

Study on Energy Distribution of the 6 MeV Electron Beam using Gaussian Approximation (가우시안 근사를 이용한 6 MeV 전자선의 에너지분포에 관한 연구)

  • Lee, Jeong-Ok;Kim, Seung-Kon
    • Journal of radiological science and technology
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    • v.22 no.2
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    • pp.53-56
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    • 1999
  • A Gaussian distribution was parametrized for the initial distribution of the electron beam emitted from a 6MeV medical linear accelerator. A percent depth dose was measured in a water phantom and the corresponding Monte Carlo calculations were performed starting from a Gaussian distribution for a range of standard deviations, ${\sigma}=0.1$, 0.15, 0.2, 0.25, and 0.3 with being the mean value for the Incident beam energy. When measurement and calculation were compared, the calculation with the Gaussian distribution for ${\sigma}=0.25$ turned out to agree best with the measurement. The results from the present work can be utilized as input energy data in planning an electron beam therapy with a Monte Carlo calculation.

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ON REFORMULATED INJECTIVE CHROMATIC INDEX OF GRAPHS

  • SALEH, ANWAR;AQEEL, A.;ALASHWALI, HANAA
    • Journal of applied mathematics & informatics
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    • v.39 no.1_2
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    • pp.13-29
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    • 2021
  • For a graph G = (V, E), a vertex coloring (or, simply, a coloring) of G is a function C : V (G) → {1, 2, …, k} (using the non-negative integers {1, 2, …, k} as colors). We say that a coloring of a graph G is injective if for every vertex v ∈ V (G), all the neighbors of v are assigned with distinct colors. The injective chromatic number χi(G) of a graph G is the least k such that there is an injective k-coloring [6]. In this paper, we study a natural variation of the injective coloring problem: coloring the edges of a graph under the same constraints (alternatively, to investigate the injective chromatic number of line graphs), we define the k- injective edge coloring of a graph G as a mapping C : E(G) → {1, 2, …, k}, such that for every edge e ∈ E(G), all the neighbors edges of e are assigned with distinct colors. The injective chromatic index χ′in(G) of G is the least positive integer k such that G has k- injective edge coloring, exact values of the injective chromatic index of different families of graphs are obtained, some related results and bounds are established. Finally, we define the injective clique number ωin and state a conjecture, that, for any graph G, ωin ≤ χ′in(G) ≤ ωin + 2.