• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1384-1387
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• 2007

We have investigated the sputtering and secondary electron emission characteristics of MgO protective layer according to the $O_2$ partial pressure. The MgO layer have been deposited by electron beam evaporation method and have varied the $O_2$ partial pressure as 0, $5.2{\times}10^{-5}$, $1.0{\times}10^{-4}$, and $4.1{\times}10^{-4}$ Torr. It has been known that the secondary electron emission coefficient and the number of defect energy levels increased as the $O_2$ partial pressure increases. So we have investigated the property of sputtering yield according to the $O_2$ partial pressure. We have known that the sputtering yield deceases as the $O_2$ partial pressure increases by using the FIB system.

• 한국재료학회지
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• 제15권6호
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• pp.361-369
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• 2005

InP(100) crystal surface was irradiated by ion beams with low energy $(180\~225\;eV)$ and high flux $(\~10^{15}/cm^2/s)$, Self-organization process induced by ion beam was investigated by examining nano structures formed during ion beam sputtering. As an ion source, an electrostatic closed electron Hall drift thruster with a broad beam size was used. While the incident angle $(\theta)$, ion flux (J), and ion fluence $(\phi)$ were changed and InP crystal was rotated, cone-like, ripple, and anistropic nanostrucuture formed on the surface were analyzed by an atomic force microscope. The wavelength of the ripple is about 40 nm smaller than ever reported values and depends on the ion flux as $\lambda{\propto}J^{-1/2}$, which is coincident with the B-H model. As the incident angle is varied, the root mean square of the surface roughness slightly increases up to the critical angle but suddenly decreases due to the decrease of sputtering yield. By the rotation of the sample, the formation of nano dots with the size of $95\~260\;nm$ is clearly observed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1268-1270
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• 1994

Fine lithographic technology in a submicron design regime is necessary for the fabrication of VLSI circuits. In such lithography, fine pattern delineation is performed by electron beam, ion beam and X-ray lithography instead of photolithography. Therefore, the new resist materials and development method have been required. So, we are investigating another positive E-beam resists which have high sensitivity and dry etching resistance, Plasma co-polymerized resist was prepared using an interelectrode gas-flow-type reacter. Methymethacrylate, tetramethyltin and styrene were chosen as the monomer to be used. The delineated pattern in the resist was developed with gas-flow-type reactor using an argon and 02 as etching gas. We studied about the effects of discharge power and mixing rate of the co-polymerized thin :film. The molecular structure of thin film was investigated by ESCA and IR, and then was discussed in relation to its quality as a resist.

• 한국진공학회지
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• 제15권6호
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• pp.637-641
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• 2006

본 논문에서는 100 nm 게이트 길이를 갖는 InGaAs/InAlAs/GaAs MHEMT(metamorphic high electron mobility transistors)m의 DC와 RF 특성을 분석 하였다. 이중 노광 방법으로 ZEP520/P(MMA-MAA)/PMMA 3층 구조의 레지스터와 게이트 길이 100 nm인 게이트를 제작하였다. 게이트의 단위 폭이 $70\;{\mu}m$인 2개의 게이트와 길이가 100 nm로 제작된 MHEMT를 DC 및 RF특성을 조사하였다. 최대 드레인 전류 밀도는 465 mA/mm, 상호전달 컨덕턴스는 844 mS/mm이, RF 측정으로부터 전류 이득 차단 주파수는 192 GHz와 최대 진동주파수 310 GHz인 특성을 보였다.

• 한국세라믹학회지
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• 제47권6호
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• pp.618-622
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• 2010

Cost-effective purification methods of silicon were carried out in order to replace the conventional Siemens method for solar grade silicon. Firstly, acid leaching which is a hydrometallurgical process was preceded with grinded silicon powders of metallurgical grade (~99% purity) to remove metallic impurities. Then, plasma treatments were performed with the leached silicon powders of 99.94% purity by argon plasma at 30 kW power under atmospheric pressure. Plasma treatment was specifically efficient for removing Zr, Y, and P but not for Al and B. Another purification step by EB treatment was also studied for the 99.92% silicon lump which resulted in the fast removal of boron and aluminum. That means the two methods are effective alternative tools for removing the doping elements like boron and phosphor.

• Nuclear Engineering and Technology
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• 제37권5호
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• pp.447-456
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• 2005

Laser driven accelerators promise to provide an alternative to conventional accelerator technology. They rely on the excitation of large amplitude density waves in a plasma by the photon pressure of an intense laser. The density oscillations in which electrons and ions are separated, result in extremely large longitudinal electric fields that can be several orders of magnitude larger than those that are used in today's radio-frequency accelerators. Whereas this principle had been demonstrated experimentally for nearly two decades, it was not until 2004 that the production of high quality electron beams around 100 MeV was demonstrated. Analysis, aided by particle-in-cell simulations, as well as experiments with various plasma lengths and densities, indicate that tailoring the length of the accelerator, together with loading of the accelerating structure with beam, are the keys to production of mono-energetic electron beams. Increasing the energy towards a GeV and beyond will require reducing the plasma density and design criteria are discussed for an optimized accelerator module. The current progress and future directions are summarized through comparison with conventional accelerators, highlighting the unique short and long term prospects for intense radiation sources and high energy accelerators based on laser-drivenplasma accelerators.

• 한국축산식품학회지
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• 제39권3호
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• pp.510-519
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• 2019

The effect of combined electron-beam irradiation and aging temperature of pork on microbiological and physicochemical properties was investigated. The samples from pork shoulder were irradiated with 0 or 2 kGy, vacuum-packaged, and assigned randomly to an aging temperature ($2^{\circ}C$, $10^{\circ}C$, or $25^{\circ}C$) during 8 d. On 4 d of aging at $25^{\circ}C$, total aerobic bacteria of non-irradiated ones reached 7 Log CFU/g which is no salable levels. Shear force values of irradiated meat after aging for 2 and 4 d at $25^{\circ}C$ was lower than those aged at $2^{\circ}C$. Irradiated samples at $2^{\circ}C$ had lower cooking loss after 2 and 8 d of aging, compared with other aging temperatures. Irradiation did not accelerate 2-thiobarbituric acid reactive substance (TBARS) value when aged up to 4 d. Irradiated samples aged at $10^{\circ}C$ and $25^{\circ}C$ for 8 d scored significantly higher TBARS values. With an increased aging period, $a^*$ and $b^*$ in irradiated samples at $2^{\circ}C$ slightly increased, but irradiation caused negligible changes in meat color. The highest contents of a desirable nucleotide flavor compounds (inosine-5-phosphate) were observed in pork at $2^{\circ}C$ when aged for 4 and 8 d, while the lowest contents were observed at $25^{\circ}C$. Aging in irradiated pork for 8 d at $2^{\circ}C$ resulted in optimal condition with improved meat quality and minimal microbiologically negative defect.

• 한국의학물리학회지:의학물리
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• 제32권4호
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• pp.165-171
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• 2021

Purpose: This study aimed to evaluate the effect of collimator width on effective atomic number (EAN), relative electron density (RED), and stopping power ratio (SPR) measured by dual-layer dual-energy computed tomography (DL-DECT). Methods: CIRS electron density calibration phantoms with two different arrangements of material plugs were scanned by DL-DECT with two different collimator widths. The first phantom included two dense bone plugs, while the second excluded dense bone plugs. The collimator widths selected were 64 mm×0.625 mm for wider collimators and 16 mm×0.625 mm for narrow collimators. The scanning parameters were 120 kVp, 0.33 second gantry rotation, 3 mm slice thickness, B reconstruction filter, and spectral level 4. An image analysis portal system provided by a computed tomography (CT) manufacturer was used to derive the EAN and RED of the phantoms from the combination of low energy and high energy CT images. The EAN and RED were compared between the images scanned using the two different collimation widths. Results: The CT images with the wider collimation width generated more severe artifacts, particularly with high-density material (i.e., dense bone). RED and EAN for tissues (excluding lung and bones) with the wider collimation width showed significant relative differences compared to the theoretical value (4.5% for RED and 20.6% for EAN), while those with the narrow collimation width were closer to the theoretical value of each material (2.2% for EAN and 2.3% for RED). Scanning with narrow collimation width increased the accuracy of SPR estimation even with high-density bone plugs in the phantom. Conclusions: The effect of CT collimation width on EAN, RED, and SPR measured by DL-DECT was evaluated. In order to improve the accuracy of the measured EAN, RED, and SPR by DL-DECT, CT scanning should be performed using narrow collimation widths.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.171-171
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• 1999

We studied the charge redistribution in the Pt-M (M=Cu, Co) alloys by X-ray Absorption Near Edge Spectroscopy(XANES) and X-ray Photoelectron Spectroscopy(XPS). These analysis tools provide us information about the charge transfer in the valence band of intermetallic bonding. The samples were prepared by arc-melting method. After annealing this samples in vacuum for several hours, we cold get the ordered samples, which were confirmed with XRD analysis. the core and valence level energy shift in these system were investigated by Mg $K\alpha$(1253.6eV) x-ray source for Pt-Co alloys and monochromatized Al $K\alpha$ (1486.6eV) for Pt-Cu alloys. Pt L2, L3-edge, and Cu, Co K-edge XANES spectra were measured with the total electron-yield mode detector at the 3Cl beam line of the PLS (Pohang light source0. from the changes of White line (WL) area and the core level shifts of the each metal sites, we can obtain the information about the electrons participating in the intermetallic bonding of the Pt-Cu and Pt-Co alloys.

• 한국진공학회지
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• 제5권3호
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• pp.245-250
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• 1996

$Y_2O_3$ thin film on si(100) was successfully grown by ionized cluster beam(ICBD) technique at substrate temperature of around $500^{\circ}C$ and pressure of ~$10^{-5}$Torr.To prevent the oxidation of Si substrae, a very thin yttrium layer was deposited on Si before reactive depositing of oxygen and yttrium source. In asdeposited stage, b.c.c and h.c.p strucutres of $Y_2O_3$ were observed from S-ary analysis. From the observation of spots and ring patterns in selected area diffractin(SAD) patterns. crystallane formation and growth could be proceeded during the deposition. $Y_2O_3$/mixed layer/$SiO_2=170\AA/50\AA/10\AA$ structure were verified by high resolution transmition electron imcroscopy(HRTEM) image, and the formation of amorphous layer of SiO2 was discussed . Electricla charateristics of the film were also investigated . In as-deposited Pt/$Y_2O_3$/Si sturcuture, leakage current was less than $10^{-6}$A/$\textrm{cm}^2$ at 7MV/cm strength.