• Progress in Superconductivity and Cryogenics
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• v.24 no.1
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• pp.18-22
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• 2022

The effect of electron beam (EB) irradiation on superconducting properties and microstructures of MgB₂ bulk superconductors were investigated. At E-beam doses of 1×10¹⁶ e/cm² and 1×10¹⁷ e/cm², the effect of irradiation on a superconducting transition temperature (T_c) of MgB₂ was weak. As a dose increases to 5×10¹⁷ e/cm², T_c decreases by 0.5 K. The critical current density (J_c) measured at 4.2 K and 20 K, and 0 T - 5 T increases slightly as exposure time increases. X-ray diffraction for the irradiation surface of MgB₂ shows that the diffraction intensity of (hkl) peaks decreases proportionally as the exposure time increases. This indicates that the crystallinity of MgB₂ was degraded by irradiation. TEM investigation for the irradiated sample showed distorted lattice structure, which is consistent with the XRD results. The J_c increase and T_c reduction of MgB₂ by irradiation are believed to be caused by the lattice distortion.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.507-510
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• 2004

Oblique ion-induced secondary electron emission coefficient(${\gamma}$) with low energy ..and work function ${\phi}_{\omega}$(${\theta}$ = 0 and ${\theta}$ = 20) of the MgO thin film in AC-PDPs has been measured by ${\gamma}$-FIB system. The MgO thin film has been deposited from sintered material under electron beam evaporation method. The energy of $He^+$ ions used has been ranged from 50eV to 150eV. Oblique ion beam has been chosen to be 10 degree, 20 degree and 30 degree. It is found that the higher secondary electron emission coefficient(${\gamma}$) has been achieved by the higher oblique ion beam up to inclination angle of 30 degree than the perpendicular incident ion beam.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.518-521
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• 2004

The degradation characteristics of MgO protective layer and phosphors have been investigated in terms of the ion-induced secondary electron emission coefficient ${\gamma}$ and static margin of discharge voltages, respectively, in this experiment. The ion-induced secondary electron emission coefficients ${\gamma}$ for the degraded MgO protective layer and phosphors have been studied by ${\gamma}$ -focused ion beam system. The energy of Ne+ ions used is from 80 eV to 200 eV in this experiment. The degraded MgO and phosphor layers are found to have higher ${\gamma}$ than that of normal ones without degradations or aged one. Also, the static margin of discharge voltages for test panels with degraded MgO protective layer and phosphors been found to be seriously decreased in comparison with those of normal ones without degradations.

• Journal of Electrical Engineering and Technology
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• v.1 no.4
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• pp.543-545
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• 2006

Surface photovoltage (SPV) measurements were performed to investigate the optic-electrical properties in the electron beam irradiation semi-insulating GaAs (e-beam irradiation SI-GaAs) and semi-insulating GaAs (SI-GaAs). The signal intensity showed stronge. dependency on the frequency in the SI-GaAs than it did in the e-beam irradiation SI-GaAs. This result indicates that the number of the generated photo-carriers depends on the surface state. Also, the B region of the e-beam irradiation SI-GaAs found a weak signal. This result was explained by the surface and internal damage with e-beam irradiation.

• Journal of Welding and Joining
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• v.15 no.3
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• pp.88-98
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• 1997

Welding defects, such as porosity and spike, have sometimes occurred in deep penetration electron beam welds. These defects are known to be one of the serious problem in electron beam welds. So, effects of active parameters ($a_b$) on bead shape and occurrence of defects in electron beam welds of heavy section 9%Ni steel plates were investigated. Partial penetration welding in flat position, and deep penetration welding of 10 ~ 28mm depth were investigated in this study. It is desirable to select low accelerating voltage and above the surface focus position $a_b$$\geq$1.2 at which a wine-cup shaped bead is obtained to avoid the welding defects such as spike and root porosity. When the accelerating voltage of electron beam was low (90kV), active parameter ($a_b$) did not influence on the bead width, penetration depth and weld defects significantly. However, in case of high voltage ($\geq$120kV), active parameter ($a_b$) was sensitively associated with penetraton depth and weld defects, i.e. when the active parameter (($a_b$) was in the range of 0.6 to 1.0, the depth of penetration was always over the target (23mm), while the depth of penetration was dramatically decreased with further increase of active parameter ($a_b$). The weld defects were decreased with the increase of active parameter $a_b$ resulting in the decrease of energy density of the focused beam in the root part of fusion zone.

• Progress in Superconductivity and Cryogenics
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• v.24 no.3
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• pp.30-34
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• 2022

Effects of electron beam (EB) irradiation on the mechanical strength of Cu (conducting sheath) and Nb (diffusion barrier) of Cu/Nb/MgB₂ superconducting was investigated. Wire- and tape-type Cu/Nb/MgB₂ samples were irradiated at E-beam energy of 2.5 MeV and 5 mA and a maximum E-beam dose was 5×10¹⁷ e/m². The hardness value of Cu and Nb region was measured by the Vickers micro-hardness method. In the case of the wire sample, the hardness of Cu and Nb increased proportionally as the dose was increased up to 5×10¹⁷ e/m², whereas in the case of the tape sample, the hardness increased up to a dose of 0.5×10¹⁷ e/m², and decreased slightly 5×10¹⁷ e/m². The hardness increase of Cu and Nb is believed to be due to the decrease of the deformability of Cu and Nb due to the defects formed inside the materials by E-beam irradiation.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1203-1206
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• 2005

Electron temperature and plasma density in coplanar alternating-current plasma display panels (AC-PDP's) have been experimentally investigated in accordance with discharge time by a micro-probe in this experiment. The resolution of a step mortor to move in micro-Langmuir probe is 10um.[1-3] The used gas in this experiment is He-Ne-Xe (4%) mixure gas. And sustain voltage is 320V which is above of firing voltage for degradation. The electron temperature and plasma density can be obtained from current-voltage (I-V) characteristics of micro Langmuir probe, in which negative to positive bias voltage was applied to the probe. And Efficiency is calculated by formula related discharge power and light emission. Those experiments operated as various discharge time ($0{\sim}72$ Hours). As a result of this experiment, Electron Temperature was increased from 2eV to 5eV after discharge running time of 20 hours and saturates beyond 20 hours. The plasma density is inversely proportional to the square root of electron temperature. So the plasma density was decreased from $1.8{\times}10^{12}cm^{-3}$ to $8{\times}10^{11}cm^{-3}$ at above discharge running time. And the Efficiency was reduced to 70% at 60hours of discharge running time.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1741-1744
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• 2005

The electron beam machining provides very high resolution up to nanometer scale, hence the E-Beam writing technology is rapidly growing in MEMS and nano-engineering areas. For E-Beam machining, $2^{nd}$ electron detector is required to see a machined sample at the stage. The $2^{nd}$ electron detector is composed of scintillator and photomultiplier with signal amplifier and high voltage power supplier. Since a photomultiplier tube is an extremely high-sensitivity photodetector, the signal light level to be detected is very low and therefore particular care must be exercised in shielding external light. In this paper, the design methodology of $2^{nd}$ electron detector and the image noise removal method are introduced.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.525-528
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• 2004

The ion-induced secondary electron emission coefficient ${\gamma}$ and work function for MgO thin film with $O_2$ plasma treatment has been investigated by ${\gamma}$ -FIB (focused ion beam) system. The MgO thin film deposited from sintered material with $O_2$ plasma treatment is found to have higher ${\gamma}$ and lower work function than those without $O_2$ plasma treatment. The energy of various ions used has been ranged from 100eV to 200eV throughout this experiment. It is found that the highest secondary electron emission coefficient ${\gamma}$ has been achieved for 10 minutes of $O_2$ plasma treatment under RF power of 50W.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.501-501
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• 2012

A 2.45 GHz electron cyclotron resonance (ECR) plasma source with a belt magnet assembly configuration (BMC) was developed for hyperthermal neutral beam (HNB) generation. A plasma source for high flux HNB generation should be satisfied with the requirements: low pressure operation, high density, and thin plasma. The ECR plasma source with BMC achieved high density at low operation pressure due to electron confinement enhancement caused by high mirror ratio and drifts in toroidal direction. The 2.45 GHz microwave launcher had a circularly bended WR340 waveguide with slits. The microwave E-field profile induced by the microwave launcher was studied in this paper. The E-field profile was a cups field perpendicular to B-filed at ECR zone. The optimized E-field profile and B-field were found for effective ECR heating.