• 제목/요약/키워드: E-beam lithography

검색결과 137건 처리시간 0.029초

생산성 향상을 위한 멀티빔 리소그라피 (Multiple Electron Beam Lithography for High Throughput)

  • 최상국;이천희
    • 한국광학회지
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    • 제16권3호
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    • pp.235-238
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    • 2005

  • 생산성 향상을 위하여 정렬된 마이크로칼럼을 이용하여 멀티-전자빔 리소그라피 장치를 개발하였다. 마이크로칼럼은 매우 작은 크기를 가지고 있어 병렬구조로 정렬하여 작동시킬 수 있다. Single Column Module(SCM) 구조의 멀티 전자빔 리소그라피 시스템과 전자칼럼을 제작하여 250 eV에서 300 eV 에너지 범위에서의 저에너지 마이크로칼럼 리소그라피를 성공적으로 수행하였다. 전자방출원에서 방출되는 전자빔의 총 전류가 $0.5\;{\mu}A$일 때, 샘플에서의 전류는 >1 nA으로 측정되었으며 리소그라피 패텅닝에서 사용된 working distance은 $\~1\;mm$였다.

  • https://doi.org/10.3807/KJOP.2005.16.3.235 인용 PDF KSCI

Monte Carlo 수치해석법을 이용한 PMMA resist에서의 저 에너지 전자빔 투과 깊이에 관한 연구 (Research on the penetration depth of low-energy electron beam in the PMMA-resist film using Monte Carlo numerical analysis)

  • 안승준;안성준;김호섭
    • 한국산학기술학회논문지
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    • 제8권4호
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    • pp.743-747
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    • 2007

  • 반도체 소자 제작에 있어서 회로의 pattern 형성에 이용하는 차세대 lithography 공정 기술을 위해서 전자빔 lithography 공정 기술 연구가 진행되고 있다. 본 연구에서는 Gauss 해석법과 Monte Carlo의 수치해석법을 사용하여 두께 100 nm의 PMMA (poly-methyl-methacrylate) resist에 전자 $1{\times}10^4$를 입사시키고, 입사 전자빔 에너지에 따른 PMMA 내에서의 투과 깊이를 비교하였다. 전자빔 에너지의 크기는 100eV, 300eV, 500eV, 700eV, 그리고 1000eV에 대하여 simulation을 실시하였다.

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나노패터닝을 위한 고에너지 전자빔 리소그래피 시뮬레이터 개발 및 검증 (A Simulator for High Energy E-beam Lithography for Nano-Patterning)

  • 김진광;김학;한창호;전국진
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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    • pp.359-362
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    • 2004

  • Electron beam on high energy acceleration, which travels deeply and sharply through photoresist, became to be used in e-beam lithography apparatus for nano-patterning in due to its high resolution. An advanced electron beam lithography simulation tool is currently undergoing development for nano-patterning. This paper will demonstrate such simulation efforts with experiments at 200 keV e-beam lithography processes on PMMA, ZEP520 of which photoresist parameters and characteristics will be explained with simulation results. Neureuther parameters was extracted from the contrast curve of the resist

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전자빔과 무반사층이 없는 크롬 마스크를 이용한 나노그레이팅 사출성형용 고종횡비 100nm 급 니켈 스템퍼의 제작 (Fabrication of High Aspect Ratio 100nm-scale Nickel Stamper Using E-beam Lithography for the Injection molding of Nano Grating Patterns)

  • 서영호;최두선;이준형;제태진;황경현
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2004년도 춘계학술대회
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    • pp.978-982
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    • 2004

  • We present high aspect ratio 100nm-scale nickel stamper using e-beam lithography process and Cr/Qz mask for the injection molding process of nano grating patterns. Conventional photolithography blank mask (CrON/Cr/Qz) consists of quartz substrate, Cr layer of UV protection and CrON of anti-reflection layer. We have used Cr/Qz blank mask without anti-reflection layer of CrON which is non-conductive material and ebeam lithography process in order to simplify the nickel electroplating process. In nickel electroplating process, we have used Cr layer of UV protection as seed layer of nickel electroplating. Fabrication conditions of photolithography mask using e-beam lithography are optimized with respect to CrON/Cr/Qz blank mask. In this paper, we have optimized e-beam lithography process using Cr/Qz blank mask and fabricated nickel stamper using Cr seed layer. CrON/Cr/Qz blank mask and Cr/Qz blank mask require optimal e-beam dosage of $10.0{\mu}C/cm^2$ and $8.5{\mu}C/cm^2$, respectively. Finally, we have fabricated $116nm{\pm}6nm-width$ and $240nm{\pm}20nm-height$ nickel grating stamper for the injection molding pattern.

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나노사출성형용 스탬퍼 제작을 위한 Electron beam lithography 패터닝 연구 (Electron beam lithography patterning research for stamper fabrication using nano-injection molding)

  • 엄상진;서영호;유영은;최두선;제태진;황경현
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2005년도 추계학술대회 논문집
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    • pp.698-701
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    • 2005

  • We have investigated experimentally a nano patterning using electron beam lithography for the nickel stamper fabrication. Recently, DVD and Blu-ray disk(BD) have nano-scale patterns in order to increase the storage density. Specially, BD has 100nm-scale patterns which are generally fabricated by electron beam lithography. In this paper, we found optimum condition of electron-beam lithography for 100nm-scale patterning. We controlled various conditions of EHP(acceleration voltage), beam current, dose and aperture size in order to obtain optimum conditions. We used 100nm-thick PMMA layer on a silicon wafer as photoresist. We found that EHP was the most dominant factor in electron-beam lithography.

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전자빔 가공기의 진공제어 밸브설계 및 특성평가 (Design and Performance Test of Vacuum Control Valve for Electron Beam Lithography)

  • 이찬홍;이후상
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2005년도 춘계학술대회 논문집
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    • pp.777-780
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    • 2005

  • The high vacuum in a electron beam lithography is basic condition, because electron beam vanish by collision with air molecules in generally atmosphere. To make high vacuum state, the vacuum control valve is essential. Most vacuum control valve are manual units. So, user of manual vacuum valve must have understanding vacuum process to change from low vacuum to high vacuum state. The user of electron beam lithography are troubled with operation of manual vacuum valve, in case the vacuum chamber is frequently open. In this paper, the design and performance test of auto vacuum control valve for electron beam lithography are described. With the auto vacuum control valve, the high vacuum level can reach 2.8E-5 Torr.

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