• Applied Science and Convergence Technology
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• 제23권5호
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• pp.261-264
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• 2014

$SrTiO_3$ (STO) single crystal irradiated with a 3-MeV proton beam exhibits blue and green mixed luminescence. However, the same proton beam when used to irradiate STO with a very thin layer of deposited Pt does not show any luminescence. This Pt layer prevents any damage which may otherwise be caused by arcing, which stems from the accumulated surface voltage of tens of kV due to the charge induced by secondary electrons on the surface of the insulator during the ion beam irradiation process. Hence, the luminescence of ion-irradiated STO originates from the modification of the STO surface layer caused by arcing rather than from any direct ion beam irradiation effect. STO treated with atmospheric-pressure plasma, a simple and cost-effective method, also exhibits the same type of blue and green mixed luminescence as STO treated with an ion beam, as the plasma also creates a layer of surface damage due to arcing.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2007년도 추계학술대회 논문집
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• pp.469-470
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• 2007

• 전자공학회논문지
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• 제51권6호
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• pp.71-77
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• 2014

본 연구에서는 radio frequency(rf) 마그네트론 스퍼터링 기술을 이용하여 Corning 유리 기판에 증착된 InGaZnO (IGZO) 박막의 광 투과도 특성에 고 에너지 전자빔 조사(high-energy electron beam irradiation (HEEBI))이 미치는 영향을 연구하였다. 저온에서 증착된 IGZO 박막은 공기 중 과 상온 조건에서 0.8 MeV의 전자빔 에너지와 $1{\times}10^{14}-1{\times}10^{16}electrons/cm^2$ dose를 사용하여 HEEBI 처리 되었다. IGZO 박막의 광 투과도는 utraviolet visible near-infrared spectrophotometer (UVVIS)로 측정되었다. HEEBI 처리 된 IGZO/유리 이중층의 총 광 투과도에서 HEEBI 처리된 IGZO 단일막 만의 광 투과도를 분리하는 방법을 상세히 연구하였다. 실험 결과로부터 $1{\times}10^{14}electrons/cm^2$의 적절한 dose로 처리된 HEEBI가 IGZO 박막의 투명도를 극대화시킴을 알 수 있었다. 또한 이렇게 적절한 dose로 처리된 HEEBI가 광학 밴드갭($E_g$)을 3.38 eV에서 3.31 eV로 감소시킴을 알 수 있었다. 이러한 $E_g$의 감소는 적절한 dose로 공기 중 상온에서 처리된 HEEBI가 진공 중 고온에서 처리된 열적 annealing 효과와 유사함을 제시하고 있다.

• 한국표면공학회지
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• 제32권3호
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• pp.406-409
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• 1999

Thin films of silver with high reflectance of 95% and above were fabricated successfully on polyester substrate by using e-beam evaporation processes. The optimum process condition was investigated by varying the current values applied while keeping the substrate temperature at room temperature by circulating the cooling water around it during deposition. Thin films of silver deposited with 30 mA as current revealed the highest reflectance of 96.4%, while being illuminated with a light of 700nm wave-length. But their adhesion showed unsatisfactory results. Though the films showed a condensation type in the cross-sectional views, they revealed crystallinity in the planes of (111) and (200) and growth orientation in <100> direction.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 춘계학술대회 논문집
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• pp.15-16
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• 2010

We used Brewster's Law to examine the mechanism of liquid crystal (LC) alignment on an organic insulation layer when subjected to ion-beam irradiation. Brewster's Law implies that the maximum rate polarized rayon a slanted insulation layers on the substrate and it illustrates the dependence of polarization and themechanical structure on the ion beam irradiation process. The pretilt angle of nematic LCs on the organic insulation surface was about $1.13^{\circ}$ for an ion beam exposure of $45^{\circ}$ for 1 minute at 1800eV. This shows the dependence of LC alignment on the polarization ratio in a slanted organic insulation layer. We also discussed the electro-optical characteristic of twisted nematic (TN) LCD using ion beam irradiation on organic overcoat layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.360-360
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• 2011

In this work, SUS310S used for valve plate assembly was electron beam (EB) welded to determine the influence of the parametric conditions on the characteristics of the weld and to minimize porosity and micro-fissures among others. The evolution in the weld geometry and microstructure was examined as a function of the process conditions such as beam current and focusing current under a constant welding speed and accelerating voltage. The integrity of the EB welds in SUS310S was examined for defects (e.g. cracking, porosity, etc.), adequate penetration depth, and tolerable weld width deviation for the various welding conditions. Optical microscopy (OM), x-ray photoelectron spectroscopy analysis (XPS), scanning electron microscopy (SEM) and 3D micro-computed tomography (Micro-CT) for the cross section analysis of the electron beam welded SUS310S were utilized. The tensile strength and hardness were analyzed for the mechanical properties of the EB weld. At the 6 kV accelerating voltage, it was determined that a satisfactory penetration depth and desirable weld width deviation requires a beam current of 30 mA and a focusing current of 0.687 A at the welding speed of 25 mm/sec.

• 대한환경공학회지
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• 제30권9호
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• pp.955-960
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• 2008

본 연구는 전자빔 공정에서 실험계획법(design of experiment: DOE) 중 일반요인배치법(general factorial design)을 이용하여 2개 인자(X$_1$: benomyl concentration(mg/L), X$_2$: E-beam irradiation(Gy))를 토대로 요인(X$_1$: benomyl concentration) 1에서 3개 수준(3 level: 0.5, 1 및 1.5 mg/L)와 요인(X$_2$: E-beam irradiation) 2에서 6개 수준(6 level: 100, 800, 600, 400, 200 및 100 Gy)으로 구성된 3블록(block) 실험조합에 따라 Benomyl의 분해(Y$_1$: the % of decomposition), 무기화(Y$_2$: the % of materialization) 및 독성평가(acute toxicity assessment)를 수행하였다. 우선 HPCL 분석에 의한 Benomyl에 분해특성은 처리조합(treatment combination) 3 블록(block)의 17 및 18번을 제외한 모든 실험조건에서 100% 분해되었고 등분산(equal variance) 조건에서 일원분산분석(one-way ANOVA)결과 수준 간 유의한 차이가 없었다(p > 0.05). 전자빔 조사에 의한 Benomyl에 무기화(materialization) 특성은 각 3개의 처리조합에서 평균 46%, 36.7% 및 22%의 제거효율을 나타났고 각 조합에서 처리수준 간 예측식은 block 1(Y$_1$ = 0.024X$_1$ + 34.1(R$^2$ = 0.929)), block 2(Y$_2$ = 0.026X$_2$ + 23.1(R$^2$ = 0.976)) 및 block 3(Y$_3$ = 0.034X$_3$ + 6.2(R$^2$ = 0.98)) 등의 1차 선형 회귀식을 만족하였다. 또한 Benomyl에 무기화(materialization)에 대한 Anderson-Darling 검정을 이용한 정규성(normality)을 만족하였다(p > 0.05). 또한 무기화에 대한 반응에 대한 선형 및 비선형을 포함한 다중회귀분석(multi regression analysis)을 도출한 결과 다음과 같은 예측식 Y = 39.96 - 9.36X$_1$ + 0.03X$_2$ - 10.67X$_1{^2}$ - 0.001X$_2{^2}$ + 0.011X$_1$X$_2$(R$^2$ = 96.3%, Adjusted R$^2$ = 94.8%)을 도출하였다. 2가지 반응변수(X$_1$: benomyl concentration(mg/L), X$_2$: E-beam irradiation(Gy))에 의한 2차 반응표면 모형식 추정으로부터 정준분석을 통해 최적조건을 도출한 결과 Benomyl 초기농도(X$_1$) 0.55 mg/L, 전자빔 조사량 950 Gy에서 TOC 제거율 57.3%으로 나타났다. 마지막으로 V. fischeri를 이용한 MicrotoxTM modified 81.9% test을 이용하여 전자빔에 의한 Benomyl에 대한 급성 독성을 평가한 결과 전자빔 조사전 block 1의 0.5 mg/L에서 10.25%, block 2의 1 mg/L에서 20.14% 및 block 3의 1.5 mg/L에서 26.2%의 생물학적 방해(inhibition)작용이 발생하였으나 전자빔 조사 후 모든 조건에서 생물학적 방해영향을 나타나지 않았다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.338-338
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• 2011

The behavior of hydroxide ions on water-ice films was studied by using $Cs^+$ reactive ion scattering (RIS), low energy sputtering (LES) and temperature-programmed desorption (TPD). A $Cs^+$ beam of a low kinetic energy (<100 eV) from $Cs^+$ ion gun was scattered at the film surface, and then $Cs^+$ projectiles pick up the neutral molecules on the surface as $Cs^+$-molecule clusters form (RIS process). In LES process, the preexisting ions on the surface are desorbed by the $Cs^+$ beam impact. The water-ice films made of a thick (>50 BL) $H_2$O layer and a thin $D_2O$ overlayer were controlled in temperatures 90~140K. We prepared hydroxide ions by using Na atoms which proceeded hydrolysis reaction either on the ice film surface or at the interface of the $H_2O$ and $D_2O$ layers.[1] The migration of hydroxide ions from the $H_2O/D_2O$ interface to the top of the film was examined as afunction of time. From this experiment, we show that hydroxide ions tend to reside at the water-ice surface. We also investigated the H/D exchange reactions of $H_2O$ and $D_2O$ molecules mediated by hydroxide ions to reveal the mechanism of migration of hydroxide to the ice surface.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 E
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• pp.1758-1760
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• 1998

MgO Protecting layer in AC PDP prevents ion bombardment in discharge plasma. The MgO layer also has the additional importance in lowering the firing voltage due to a large secondary electron emission coefficient. Until now, the MgO protecting layer is mainly prepared by E-beam Evaporation. However, the optimum activation manufacturing process of MgO thin film wasn't well known. Therefore in this study, after MgO protecting layer is prepared on dielectric layer by E-beam evaporation and liquid MgO spin coating, we carried out activation process of MgO thin film as a parameter of Temperature, Operating time and Operating pressure. In addition, discharge characteristics are also studied as a parameter of activation conditions.

• 한국표면공학회지
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• 제32권3호
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• pp.440-443
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• 1999

The morphology and composition of anodic films, formed on aluminium at various current densities, in the range 1-$100{\;}Am^{-2}$, in the molten bisulphate melt at different temperatures (418-498K), have been studied using transmission electron microscopy of ultramicrotomed film sections, and ion beam thinned films. From the structural analysis of the electron diffraction patterns taken from the ultramicrotomed sections and ion beam thinned films, it can be concluded that the crystal modification process from ${\gamma}-Al_2O_3{\;}to{\;}{\alpha}-Al_2O_3$ proceeds in the following steps : (equation omitted)