• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.17-20
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• 2000

We have enhanced the yield of 0.25 ${\mu}{\textrm}{m}$ T-gate $Al_{0.25}$G $a_{0.75}$As/I $n_{0.2}$G $a_{0.8}$As P-HEMT using three-layer E-beam lithography process and selective etching process. The three-layer resist structure (PMMA/copolymer/ PMMA=2000 $\AA$/3000 $\AA$/2000 $\AA$) and three developers (Benzene：IPA=1：1,Methanol：IPA =1：1,MIBK：IPA=1：3) were used for fabrication of a wide-head T-gate by the conventional double E-beam exposure technology. Also 1 wt% citric acid： $H_2O$$_2$：N $H_{4}$OH(200m1：4ml：2.2ml) solution were used for uniform gate recess. The etching selectivity of GaAs over $Al_{0.25}$G $a_{0.75}$As is measured to be 80. So these P-HEMT processes can be used in X-band MMIC LNA fabrication.ion.ion.ion.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2011.06a
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• pp.1507-1508
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• 2011

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.59.2-59
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• 2003

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.777-780
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• 2005

The high vacuum in a electron beam lithography is basic condition, because electron beam vanish by collision with air molecules in generally atmosphere. To make high vacuum state, the vacuum control valve is essential. Most vacuum control valve are manual units. So, user of manual vacuum valve must have understanding vacuum process to change from low vacuum to high vacuum state. The user of electron beam lithography are troubled with operation of manual vacuum valve, in case the vacuum chamber is frequently open. In this paper, the design and performance test of auto vacuum control valve for electron beam lithography are described. With the auto vacuum control valve, the high vacuum level can reach 2.8E-5 Torr.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.16 no.2
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• pp.44-49
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• 2007

An agent is an abstract unit for problem solving in the field of distributed artificial intelligence, and an agent-based system is designed and implemented based on the definition of agent as its central concept. Agent modeling is advantageous to abstraction, disintegration and structuring for describing complex system, so its application is increased in various areas including air traffic control, power transmission, e-commerce and medicine. There is no agreed definition of agent but agents have common points as follows: autonomy, reactivity, pro-activeness and cooperation. An agent-oriented modeling is an approach of a concept different form existing object-oriented modeling. This study proposed the agent application for E-Beam manufacturing system. To evaluate the performance of the proposed process design, we used the JADE library. The JADE toolkit provides a FIPA-compliant agent platform and a package to develp Java agents. It provides a basic set of functionalities that are regarded as essential for an autonomous agent architecture.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.4
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• pp.402-409
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• 2013

An innovative application of voltage-contrast (VC) inspection allowed inline detection of NMOS leakage in dense SRAM cells is presented. Cell sizes of SRAM are continual to do the shrinkage with bit density promotion as semiconductor technology advanced, but the resulting challenges include not only development of smaller-scale devices, but also intra-devices isolation. The NMOS leakage caused by the underneath n+/P-well shorted to the adjacent PMOS/N-well was inspected by the proposed electron-beam (e-beam) scan in which VC images were compared during the in-line process step of post contact tungsten (W) CMP (Chemical Mechanical Planarization) instead of end-of-line electrical test, which has a long response time. A series of experiments based on the mechanism for improving the intra-well isolation was performed and verified by the inline VC inspection. An optimal process-integration condition involved to the tradeoff between the implant dosage and photo CD was carried out.

• Transactions of Materials Processing
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• v.31 no.1
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• pp.29-38
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• 2022

Recently, the composite material market is gradually growing. Various composite forming processes have been developed in order to reduce the production cost of the composite material. Unlike the conventional forming process, the microwave composite forming process has the advantage of reducing the processing time because the composite material is heated directly or indirectly at the same time. Due to this advantage, in this study, a double cantilever beam test was conducted with specimens manufactured by the microwave composite forming process. The purpose of this study was to compare mode-I energy release rate for specimens manufactured by prepreg compression forming and microwave composite forming processes. First, a microwave oven was proposed to conduct the microwave composite forming process. Double cantilever beam specimens were manufactured. After that, the double cantilever beam test was conducted to obtain the mode-I energy release rate. Mode-I energy release rates of specimens manufactured by the microwave composite forming and prepreg compression forming processes were then compared. As a result, mode-I energy release rates of specimens fabricated by the microwave composite forming process were similar to those fabricated with the prepreg compression forming process with a relatively reduced process time.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.379-382
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• 2006

In this study, an attempt was made to form magnesium oxide layer via aqueous solution route of salt precipitation process. A layer with flake morphology was formed from the process and various dopants were added during the forming process. The films formed were characterized using SEM, XRD, and cathodoluminescence measurement. In addition, the discharge characteristics were evaluated using panel tests. The results indicate that MgO film can be formed via the aqueous solution process successfully, of which characteristics are comparable to those of MgO film formed by e-beam evaporation process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.10a
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• pp.40-44
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• 2000

$Bi_2Sr_2Ca_nCu_{n+1}O_y$($n{\geq}0$; BSCCO)thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.796-800
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• 2000

Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{y}$(n$\geq$0; BSCCO) thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.on.n.