• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1992년도 추계학술대회 논문집
• /
• pp.67-72
• /
• 1992

In this paper, We prepared the thin film Cu-doped CdS Photovoltaic Cell, varying deposition condition by E-beam process and investigated its properties. After the Cu/CdS films were deposited on transparent ITO glass. We heat-treated to diffuse Cu atoms to CdS fi1m at 350[$^{\circ}C$]. With deposited Cu-doped CdS film. We investigated the electrical. optical. X-ray diffraction and junction property. We studied how to prepare the High conversion efficiency Solar cell window layer.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 춘계학술대회 논문집 센서 박막재료연구회 및 광주 전남지부
• /
• pp.69-72
• /
• 2008

Decay processes of accumulated charge in e-beam irradiated polymers during elevating temperature are observed using pulsed electro-acoustic measurement system. Since the polymeric materials have many superior properties such as light-weight, good mechanical strength, high flexibility and low cost, they are inevitable materials for spacecrafts. In space environment, however, the polymers sometimes have serious damage by irradiation of high energy charged particles. When the polymers of the spacecraft are irradiated by high energy charged particles, some of injected charges accumulate and remain for long time in the bulk of the polymers. Since the bulk charges sometimes cause the degradation or breakdown of the materials, the investigation of the charging and the decay processes in polymeric materials under change of temperature is important to decide an adequate material for the spacecrafts. By measuring the charge behavior in e-beam irradiated polymer, such as polyimide or polystyrene, it is found that the various accumulation and decay patterns are observed in each material. The results seem to be useful and be helpful to progress in the reliability of the polymers for the spacecraft.

• International Journal of Concrete Structures and Materials
• /
• 제18권3E호
• /
• pp.199-205
• /
• 2006

The composite frame system with reinforced concrete column and steel beam can be improved in its structural efficiency by complementing the shortcomings of the two systems. The system, however, has many inherent problems in practical design and construction process due to the dissimilarities of the materials. Considering these circumstance, this research aims for the development of a composite structural system which connects the steel beams to the R/C columns with higher structural safety and economy. Basically, the proposed connection system is composed of four split tees, structural angles reinforced by a stiffener, high strength steel rods, connecting plates and shear plates. Structural tests have been carried out to investigate the moment transfer mechanism 1Tom the beam flange to steel rods or connecting plates through the structural angle reinforced by a stiffener. The four prototype specimens have been tested until the flange of the beam reached a plastic state. The test results indicated that no distinct material dissimilarities between concrete and steel have been detected for the proposed hybrid beam-column connection system and that the stress transfer through the structural angle between the beam flange and steel rods or connecting plates was very encouraging.

• Journal of information and communication convergence engineering
• /
• 제4권4호
• /
• pp.158-161
• /
• 2006

[ $Bi_2Sr_2Ca_nCu_{n+1}O_y(n{\geq}0)$ ] thin film is fabricatedvia two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.312-312
• /
• 2013

GaN based light emitting diodes (LEDs) are important devices that are being used extensively in our daily life. For example, these devices are used in traffic light lamps, outdoor full-color displays and backlight of liquid crystal display panels. To realize high-brightness GaN based LEDs for solid-state lighting applications, the development of p-type ohmic electrodes that have low contact resistivity, high optical transmittance and high refractive index is essential. To this effect, indiumtin oxide (ITO) have been investigated for LEDs. Among the transparent electrodes for LEDs, ITO has been one of the promising electrodes on p-GaN layers owing to its excellent properties in optical, electrical conductivity, substrate adhesion, hardness, and chemical inertness. Sputtering and e-beam evaporation techniques are the most commonly used deposition methods. Commonly, ITO films on p-GaN by sputtering have better transmittance and resistivity than ITO films on p-GaN by e-bam evaporation. However, ITO films on p-GaN by sputtering have higher specific contact resistance, it has been demonstrated that this is due to possible plasma damage on the p-GaN in the sputtering process. In this paper, we have investigated the advanced sputtering using plasma damage-free p-electrode. Prepared the ITO films on the GaN based LEDs by e-beam evaporation, normal sputtering and advanced sputtering. The ITO films on GaN based LEDs by sputtering showed better transmittance and sheets resistance than ITO films on the GaN based LEDs by e-beam evaporation. Finally, fabricated of GaN based LEDs by using advanced sputtering. And compared the electrical properties (measurement by using C-TLM) and structural properties (HR-TEM and FE-SEM) of ITO films on GaN based LEDs produced by e-beam evaporation, normal sputtering and advanced sputtering. As a result, It is expected to form plasma damage free-electrode, and better light output power and break down voltage than LEDs by e-beam evaporation and normal sputter.

• 한국결정성장학회:학술대회논문집
• /
• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
• /
• pp.5-18
• /
• 1996

The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.229-229
• /
• 2012

Adhesion of Copper film on the aluminum oxide layer formed by anodizing an aluminum plate was enhanced by applying ion beam mixing method. Forming an conductive metal layer on the insulating oxide surface without using adhesive epoxy bonds provide metal-PCB(Printed Circuit Board) better thermal conductivities, which are crucial for high power electric device working condition. IBM (Ion beam mixing) process consists of 3 steps; a preliminary deposition of an film, ion beam bombardment, and additional deposition of film with a proper thickness for the application. For the deposition of the films, e-beam evaporation method was used and 70 KeV N-ions were applied for the ion beam bombardment in this work. Adhesions of the interfaces measured by the adhesive tape test and the pull-off test showed an enhancement with the aid of IBM and the adhesion of the ion-beam-mixed films were commercially acceptable. The mixing feature of the atoms near the interface was studied by scanning electron microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy.

• Structural Engineering and Mechanics
• /
• 제61권2호
• /
• pp.193-207
• /
• 2017

In this study, the vibration of an electrostatically actuated micro cantilever beam is analyzed in which a viscoelastic layer covers a portion of the micro beam length. This proposed model is considered as the main element of mass and pollutant micro sensors. The nonlinear motion equation is extracted by means of Hamilton principle, considering nonlinear shortening effect for Euler-Bernoulli beam. The non-linear effects of electrostatic excitation, geometry and inertia have been taken into account. The viscoelastic model is assumed as Kelvin-Voigt model. The motion equation is discretized by Galerkin approach. The linear free vibration mode shapes of non-uniform micro beam i.e. the linear mode shape of the system by considering the geometric and inertia effects of viscoelastic layer, have been employed as comparison function in the process of the motion equation discretization. The discretized equation of motion is solved by the use of multiple scale method of perturbation theory and the results are compared with the results of numerical Runge-Kutta approach. The frequency response variations for different lengths and thicknesses of the viscoelastic layer have been founded. The results indicate that if a constant volume of viscoelastic layer is to be deposited on the micro beam for mass or gas sensor applications, then a modified configuration may be found by using the analysis of this paper.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2001년도 춘계학술대회논문집D
• /
• pp.939-944
• /
• 2001

For the application of simultaneous $DeSO_{2}\;&\;DeNO_{x}$ equipment using non-thermal plasma process to the industrial and power plants, the many types of plasma device and process were studied. The e-beam and pulsed plasma corona discharge process are outstanding for the study to apply commercial large-scale plant from among these. In this paper, non-thermal plasma of technical trends and the characteristics of system developed by Doosan heavy industries & construction Co., Ltd. are explained. We have researched pulsed plasma corona discharge process since 1994. At the basis of reasonable results for the pilot plant, we constructed the demonstration plant at a domestic coal-fired power plant in 1999, as the previous step for commercial use. In near future, enough information about designs and costs of commercial-size system will be obtained.

• 공업화학
• /
• 제16권6호
• /
• pp.853-856
• /
• 2005

자성 메모리반도체의 핵심 소자인 magnetic tunnel junction (MTJ) stack에 대한 고밀도 유도결합 플라즈마 반응성 식각이 연구되었다. MTJ stack은 electron(e)-beam lithography 공정을 사용하여 나노미터 크기의 패턴 형성이 되었으며 식각을 위한 하드 마스크(hard mask)로서 TiN 박막이 이용되었다. TiN 박막은 Ar, $Cl_2/Ar$, 그리고 $SF_6/Ar$들의 가스를 사용하여 식각공정이 연구되었다. E-beam lithography로 패턴된 TiN/MTJ stack은 첫 번째 단계로 TiN 하드 마스크가 식각되고 두 번째로 MTJ stack이 식각되어 완성되었다. MTJ stack은 Ar, $Cl_2/Ar$, $BCl_3/Ar$을 이용하여 식각되었으며 각각의 가스농도와 가스 압력을 변화시켜 MTJ stack의 식각특성이 조사되었다.