• Journal of Sensor Science and Technology
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• v.6 no.4
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• pp.328-336
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• 1997

The CdSe thin films were grown on the Si(100) wafers by a hot wall epitaxy method (HWE). The source and substrate temperature are $600^{\circ}C$ and $430^{\circ}C$ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the temperature range 30K to 150K by impurity scattering and decreased in the temperature range 150k to 293k by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity(${\gamma}$), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of $1.39{\times}10^{7}$, the MAPD of 335mW, and the rise and decay time of 10ms and 9.5ms, respectively.

• Korean Chemical Engineering Research
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• v.55 no.1
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• pp.93-98
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• 2017

This experiment investigated characteristic changes in a $Cu_2ZnSnS_4$(CZTS) solar cell by applying a $Zn(O_x,S_{1-x})$ butter layer with various compositions on the upper side of the absorber layer. Among the four single layers such as $Zn(O_{0.76},S_{0.24})$, $Zn(O_{0.56},S_{0.44})$, $Zn(O_{0.33},S_{0.67})$, and $Zn(O_{0.17},S_{0.83})$, the $Zn(O_{0.76},S_{0.24})$ buffer layer was applied to the device due to its bandgap structure for suppressing electron-hole recombination. In the application of the $Zn(O_{0.76},S_{0.24})$ buffer layer to the device, the buffer layer in the device showed the composition of $Zn(O_{0.7},S_{0.3})$ because S diffused into the buffer layer from the absorber layer. The $Zn(O_{0.7},S_{0.3})$ buffer layer, having a lower energy level ($E_V$) than a CdS buffer layer, improved the $J_{SC}$ and $V_{OC}$ characteristics of the CZTS solar cell because the $Zn(O_{0.7},S_{0.3})$ buffer layer effectively suppressed electron-hole recombination. A substitution of the CdS buffer layer by the $Zn(O_{0.7},S_{0.3})$ buffer layer improved the efficiency of the CZTS solar cell from 2.75% to 4.86%.

• 한국균학회소식:학술대회논문집
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• 2015.05a
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• pp.15-15
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• 2015

Aspergillus fumigatus is a major cause of invasive aspergillosis (IA), a significant health issue worldwide with high mortality rates up to 95%. Our lab is interested in how A. fumigatus adapts to low oxygen conditions 'hypoxia', which is one of the important host microenvironments. A. fumigatus SrbA is a basic helix-loop-helix (bHLH) transcriptional regulator and belongs to sterol regulatory element binding protein (SREBP) family members. Loss of SrbA completely blocks growth in hypoxia and results in avirulence in murine models of IA suggesting an essential role of SrbA in hypoxia adaptation and virulence in A. fumigatus. We conducted chromatin immunoprecipitation sequencing (ChIP-seq) with A. fumigatus wild type using a SrbA specific antibody, and 97 genes were revealed as SrbA direct targets. One of the 'SrbA regulons' (AFUB_099590) was a putative bHLH transcriptional regulator whose sequence contained a characteristic tyrosine substitution in the basic portion of the bHLH domain of SREBPs. Therefore, we designated AFUB_099590 SrbB. Further characterization of SrbB demonstrated that SrbB is important for radial growth, biomass production, and biosynthesis of heme intermediates in hypoxia and virulence in A. fumigatus. A series of quantitative real time PCR showed that transcription of several SrbA regulons is coordinately regulated by two SREBPs, SrbA and SrbB in hypoxia. This suggests that SrbA and SrbB have both dependent and independent functions in regulation of genes responsible for hypoxia adaptation in A. fumigatus. Together, our data provide new insights into complicated roles of SREBPs in adaptation of host environments and virulence in pathogenic fungi.

• Asian-Australasian Journal of Animal Sciences
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• v.27 no.4
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• pp.518-523
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• 2014

There are multiple experiments conducted with male Korean native ducks (KND) to evaluate the optimal levels of limiting amino acids (AA). In Exp. 1, a total of 450 one-d-old male KNDs were divided into five groups with six replicates and fed experimental diets with varying levels of lysine, total sulfur amino acids (TSAA) and threonine (T1, 0.90/0.74/0.70%; T2, 1.00/0.82/0.77%; T3, 1.10/0.90/0.85%; T4, 1.20/0.98/0.93%; T5, 1.30/1.07/1.01%) to 21 d of age. In Exp. 2, one-d-old male KND were received and fed commercial starter diet from hatching to 21 d of age, and then divided into five groups with six replicates and fed one of five diets varying levels of lysine, TSAA, and threonine (T1, 0.73/0.62/0.54%; T2, 0.80/0.68/0.60%; T3, 0.87/0.74/0.65%; T4, 0.94/0.80/0.70%; T5, 1.01/0.86/0.75%) during 22 to 56 d of age, respectively. The BW gain was linearly increased as dietary limiting AA levels increased to 1.20% lysine, 0.98% TSAA and 0.93% threonine. There were no significant differences in feed intake, gain:feed and uniformity among groups. In Exp. 2, the BW gain and gain:feed were not affected by dietary limiting AA levels. There were no significant differences in carcass characteristics and meat quality among groups. The growth performance and carcass characteristics did not show the significant response to increasing dietary limiting AA levels in KND during 22 to 56 d of age. In conclusion, the levels of lysine, TSAA and threonine necessary to maximize growth for starter phase were at least 1.20%, 0.98%, and 0.93%, respectively. On the other hands, KND require relatively low levels of limiting AA for late growth and carcass yield. The dietary levels of 0.73% lysine, 0.62% TSAA and 0.54% threonine appear to be adequate during growing phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.137-137
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• 2009

Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.327-327
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• 2009

ZnO with a large band gap (~3.37 eV) and exciton binding energy (~60 meV), is suitable for optoelectronic applications such as ultraviolet (UV) light emitting diodes (LEDs) and detectors. However, the ZnO-based p-n homojunction is not readily available because it is difficult to fabricate reproducible p-type ZnO with high hall concentration and mobility. In order to solve this problem, there have been numerous attempts to develop p-n heterojunction LEDs with ZnO as the n-type layer. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducible availability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices. In particular, a number of ZnO films show UV band-edge emission with visible deep-level emission, which is originated from point defects such as oxygen vacancy, oxygen interstitial, zinc interstitial[1]. Thus, defect-related peak positions can be controlled by variation of growth or annealing conditions. In this work, the undoped ZnO film was grown on the p-GaN:Mg film using RF magnetron sputtering method. The undoped ZnO/p-GaN:Mg heterojunctions were annealed in a horizontal tube furnace. The annealing process was performed at $800^{\circ}C$ during 30 to 90 min in air ambient to observe the variation of the defect states in the ZnO film. Photoluminescence measurements were performed in order to confirm the deep-level position of the ZnO film. As a result, the deep-level emission showed orange-red color in the as-deposited film, while the defect-related peak positions of annealed films were shifted to greenish side as increasing annealing time. Furthermore, the electrical resistivity of the ZnO film was decreased after annealing process. The I-V characteristic of the LEDs showed nonlinear and rectifying behavior. The room-temperature electroluminescence (EL) was observed under forward bias. The EL showed a weak white and strong yellowish emission colors (~575 nm) in the undoped ZnO/p-GaN:Mg heterojunctions before and after annealing process, respectively.

• Journal of Bio-Environment Control
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• v.25 no.2
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• pp.123-132
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• 2016

The importance of energy saving technology for managing greenhouse was recently highlighted. For practical use of energy in greenhouse, it is necessary to simulate energy flow precisely and estimate heating/cooling loads of greenhouse. So the main purpose of this study was to develope and to validate greenhouse energy model and to estimate annual/maximum energy loads using Building Energy Simulation (BES). Field experiments were carried out in a multi-span plastic-film greenhouse in Jeju Island ($33.2^{\circ}N$, $126.3^{\circ}E$) for 2 months. To develop energy model of the greenhouse, a set of sensors was used to measure the greenhouse microclimate such as air temperature, humidity, leaf temperature, solar radiation, carbon dioxide concentration and so on. Moreover, characteristic length of plant leaf, leaf area index and diffuse non-interceptance were utilized to calculate sensible and latent heat exchange of plant. The internal temperature of greenhouse was compared to validate the greenhouse energy model. Developed model provided a good estimation for the internal temperature throughout the experiments period (coefficients of determination > 0.85, index of agreement > 0.92). After the model validation, we used last 10 years weather data to calculate energy loads of greenhouse according to growth stage of greenhouse crop. The tendency of heating/cooling loads change was depends on external weather condition and optimal temperature for growing crops at each stage. In addition, maximum heating/cooling loads of reference greenhouse were estimated to 644,014 and $756,456kJ{\cdot}hr^{-1}$, respectively.

• Asian-Australasian Journal of Animal Sciences
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• v.20 no.5
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• pp.682-692
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• 2007

This study presents an automatic system to predict parturition time in the crated sows. The system relies on ultrasonic transducers mounted from above along the length of the crate. Using a 40 kHz time of flight (TOF) single envelope wave, the momentary distances between the sensors are measured. Therefore, the local momentary height of the sow and the momentary posture, i.e. standing posture (SDP), kneeling posture (KP), sitting posture (STP) and lateral lying posture (LLP) are determined. Crated sows change their postures from standing to lying and vice versa which follows a characteristic pattern. As parturition approaches, sows exhibit uneasiness, restlessness and the stand up sequence (SUS, the posture transition from LLP to SDP) rate increases because of labor pains. In time series, the SUS rate demonstrates a peak and it happens approximately 0-12 h before parturition. In this paper, the basic parturition threshold value method (BPTVM) and the same hour method (SHM) are proposed for predicting parturition, both of which are based on the SUS rate. The BPTVM mainly detects the peak of the SUS rate. As the SUS rate exceeds the threshold value, the parturition becomes predictable. Moreover, the SHM calculates the difference in the SUS rates between a particular time of day and the corresponding time of the preceding day. Compared to the BPTVM, the SHM can eliminate the circadian rhythm of the SUS rate influenced by feeding behavior. Using the SHM the parturition can be approximately predicted within hours. In an attempt to define the threshold parameters of predicting parturition, a data set with 32 sows of the SUS rate are used to estimate assumable predicting probability. The results show the assumable probability of the parturition prediction within 9 h is 96.9% for the SHM and 84.4% for the BPTVM. Moreover, the SHM can even reach a 75% probability of prediction within three hours of parturition. We conclude that the SHM is more accurate and is more useful for parturition time prediction. When parturition is detected, the proposed algorithm generates a warning signal which can inform human personnel to protect the mother and newborn piglets.

• Journal of Environmental Health Sciences
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• v.24 no.1
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• pp.87-97
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• 1998

This study was performed to investigate the Natural mineral water quality at 47 sites in Chonnam area, samples were collected spring, summer, fall, winter for a seasonal variation in 1996. The results obtained were summarized as follows 1. The mean of F, pH, HCO$_3$, NO$_3$ -N were 0.19 mg/l, 6. 9, 34.99 mg/l, 1.40 mg/l and those of Na, K, Ca, Mg were 12.1 mg/l, 1.2 mg/l, 7.7 mg/l, 2.1 mg/l respectively. 2. The contents of F were reasonable at Multonggol as 1.35 mg/l and Yongbayui as 0.57 mg/l respectively, but there is no detected at Sidong and detected below 0.1 mg/l at Gubongsan, Hansansa area. 3. According to the geological effect, the content of F was showed higher in granite than in tuff, and index of pH was higher in tuff than in andesite, and content of HCO$_3$ was higher in andesite than in granite. 4. The K and O values were used as index of healthy and delicious water. As a result, thirtyfive sites(74.5%) was decided as healthy and delicious water. 5. The contents of NO$_3$-N were detected over 5 mg/l at Sukchonsa, Gajanggol, Yudalsan, Muchang, Kisan.

• Parasites, Hosts and Diseases
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• v.36 no.2
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• pp.81-90
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• 1998

The present study was performed to observe the infection status of several kind of animals with indigenous Gnnthostomn in Korea, and morphological characteristics of gnathostome larvae detected from pit-viper, Askistronon breuiccudus, for the species bullfrogs. several kinds of snakes, j.e., 55 Elnphe rufodorsata, 2 Dinodon rufozonatum rufzonatum. 62 Rhnbdophis tisrinus tigrinus and 87 Askistronon app., and 438 cats were examined. A total of 21 larval gnathostomes was detected from 12 pit-vipers, A. breuicnudus. They were 2.233 x 0.343 mm in average size and covered with about 210 transverse rows of minute cuticular spines. Their characteristic head bulbs were provided with 4 rows of hooklets of which average numbers in each row were 36.8, 39.0, 41.7 and 44.3. posteriorly. In the cross sections of midgut level, the intestinal wall consisted of a single layer of 19-25 elongate epithelial cells with a single nucleus. SEM observation of the larvae revealed unique features of head bulb , cuticular spines on transverse striations and a cervical papilla. On the basis of above morphological characteristics, they were identified as the advanced third-stage larvae of Gnothostomo hispinum. It was first confirmed that the pit-viper. ABkistronon breuicaunus is the snake intermediate host of G. hispidun.