• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.228-228
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• 2008

CdS is II-VI semiconductor with a wide band gap of approximately 2.42 eV. CdS is the most popularly employed heterojunction partner to p-CdTe due to its similar chemical properties. In this work, to improvement of the surface properties of the CdS films, PET substrate is treated by high density $O_2$ plasma. CdS films are prepared by chemical bath deposition(CBD) method. In case of the PET substrate with plasma treatment for 2min, the crystalline orientation of CdS films exhibits a strong hexagonal(002). Grain size was increased from 300nm without $O_2$ plasma treatment to 380nm with an $O_2$ plasma treatment.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1382-1383
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• 2006

ZnO 박막은 wide band gap(Eg=3.37eV)의 derect band gap을 갖고 있기 때문에 여러 소자로의 응용가능성에 큰 기대를 하고 있는 물질이다. 본 논문에서는 소자 제조과정에서 요구되는 ZnO 박막의 식각변수에 따른 식각율과 식각특성에 관하여 연구하였으며 Inductively coupled plasma(ICP)를 사용하여 $BCl_3$/Ar 가스를 혼합하여 식각을 하였다. $BCl_3$/Ar=8/2 플라즈마에서 화학적 식각의 도움을 받아 ZnO 박막의 식각률은 1724 ${\AA}/min$ 로 최고를 보였으며 이때의 공정 조건은 800 W 의 RF power, 400 W 의 bias power, 1 Pa 의 공정 압력이었다. 식각시에 플라즈마 내부의 이온 거동상태를 측정하기위해 quadrupolemass spectrometer(QMS)를 사용하여 분석하였고 식각후 ZnO 박막의 식각률은 surface profiler(KLA fencer, ${\alpha}$-step 500)을 이용하여 측정하고 ZnO 박막과 B, Cl 라디칼과의 표면 반응 상태를 고찰하기 위하여 식각된 ZnO 박막의 표면을 X-ray photoelectron spectroscopy(XPS)로 분석하였다. XPS를 통하여 ZnO 박막과 Cl 라디칼과 반응을 하여 식각된다는 것과 낮은 휘발성으로 인하여 Ar 이온에 의한 스퍼터링 효과의 도움에 의해서 식각이 진행됨을 확인하였다.

• Journal of the Korean institute of surface engineering
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• v.43 no.2
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• pp.64-72
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• 2010

CuSnZn electroplating was investigated as alternative to Ni plating. Evaluation of electrolyte and plating process was performed to control physical characteristics of the film, and to collect practical data for application. Hull-cell test was conducted for basic comparison of two commercialized products and developed product. Based on hull-cell test results, long term test of three electrolytes was performed. Various analysis on long term tested electrolyte and samples have been done. Reliable and practical data was collected using FE-SEM (FEI, Sirion), EDX (ThermoNoran SIX-200E), ICP Spectrometer (GBC Scientifi c, Integra XL), FIB (FEI, Nova600) for anlysis. Physical analysis and reliability test of the long term tested film were also carried out. Through this investigation plating time, plating speed, electrolyte composition, electrolyte metal consumption, hardness and corrosion resistance has been compared. This set of data is used to predict and control the chemical composition of the film and modify the physical characteristics of the CuSnZn alloy.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2004.02a
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• pp.165-169
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• 2004

It was studied on the reductive extraction between the eutectic salt and Bi metal phases. The solutes were zirconium and the rare earth elements, where zirconium was used as the surrogate for the transuranic(TRU) elements. All the experiments were performed in a glove box filled with argon gas. Two types of experimental conditions were used -high and low initial solute concentrations in salt. Li-Bi alloy was used as a reducing agent to reduce the high chemical activity of Li. The reductive extraction characteristics were examined using ICP, XRD and EPMA analysis. Zirconium was successfully separated from the rare earth elements by the reductive extraction method. The LiF-NaF-KF system was favorable among the fluoride salt systems, whereas the LiCl-KCl system was favorable among the chloride salt systems. When the solute concentrations were high, intermetallic compounds were found near the salt-metal interface.

• Bulletin of the Korean Chemical Society
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• v.33 no.5
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• pp.1741-1747
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• 2012

Water-dispersible ZnS:Mn nanocrystals were synthesized by capping the surface of the nanocrystals with conventional aminoacids ligands: serine and threonine. The aminoacids capped ZnS:Mn nanocrystal powders were characterized by XRD, HR-TEM, EDXS, ICP-AES and FT-IR spectroscopy. The optical properties were also measured by UV/Vis and solution photoluminescence (PL) spectroscopies in aqueous solvents. The solution PL spectra showed broad emission peaks around 600 nm with PL efficiencies of 9.7% (ZnS:Mn-Ser) and 15.4% (ZnS:Mn-Thr) respectively. The measured particle sizes for the aminoacid capped ZnS:Mn nanocrystals by HR-TEM images were about 3.0-4.0 nm, which were also supported by Debye-Scherrer calculations. In addition, cytotoxic effects of four aminoacids capped ZnS:Mn nanocrsystals over the growth of wild type E. coli were investigated. Although toxicity in the form of growth inhibition was observed with all the aminoacids capped ZnS:Mn nanocrystals at higher dose (1 mg/mL), ZnS:Mn-Met and ZnS:Mn-Thr appeared non-toxic at doses less than 100 ${\mu}g$/mL. Low biological toxicities were seen at doses less than 10 ${\mu}g$/ mL for all nanocrystals.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.215.1-215.1
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• 2016

플라즈마는 반도체, 디스플레이, 태양전지 등 다양한 산업 분야에 이용된다. 플라즈마 공정 시 수율 향상을 위해 플라즈마를 진단하는 기술이 필요한데, 대표적으로 전자온도가 있다. 반도체 공정의 낮은 압력과 높은 밀도의 플라즈마에서 전자온도는 1~10 eV 정도인데, 0.5 eV정도의 아주 적은 차이로도 공정 결과에 큰 영향을 미친다. 플라즈마의 전자온도를 측정하는 방법은 전기적 탐침 방법인 랑뮤어 탐침(Langmuir Probe)과 와이즈 프로브(Wise Probe)를 이용한 방법, 그리고 광학적 방법인 방출분광법(OES : Optical Emission Spectroscopy)이 있다. 전기적 탐침 방법은 직접 플라즈마 내부에 탐침을 넣기 때문에 불활성 기체를 사용한 공정에서는 잘 작동하지만 건식식각이나 증착에 사용할 경우 탐침의 오염으로 인한 오동작, 공정 시 생성된 샘플에 영향을 줄 수 있다는 단점이 있다. 반면에 방출분광법은 광학적 진단으로, 플라즈마를 사용하는 공정 진행 중에 외부에 광학계를 설치하여 플라즈마에서 발생하는 빛을 광학적으로 분석하기 때문에 공정에 영향을 미치지 않고, 공정 장비에 적용이 쉬운 장점을 가지고 있다. 본 연구에서는 RF Power를 인가한 유도결합플라즈마(ICP : Inductively Coupled Plasma) 공정에서 아르곤 가스와 산소 혼합가스 분압과 인가전압을 변화시켜 플라즈마 방출광 세기 변화에 따른 전자온도를 측정하였다. 전자온도 측정에는 전기적 방법인 랑뮤어 탐침, 와이즈 프로브를 이용한 방법과 광학적 방법인 방출분광법을 사용하여 측정하였으며 이를 비교 분석하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.394-399
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• 2016

The silicon dioxide ($SiO_2$) was deposited using various gas as oxygen and nitrous oxide ($N_2O$) in nowadays. In order to improve electrical characteristics and the interface state density ($D_{it}$) in low temperature, It was deposited with carbon dioxide ($CO_2$) and silane ($SiH_4$) gas by inductively coupled plasma chemical vapor deposition (ICP-CVD). Each $D_{it}$ of $SiO_2$ using $CO_2$ and $N_2O$ gas was $1.30{\times}10^{10}cm^{-2}{\cdot}eV^{-1}$ and $3.31{\times}10^{10}cm^{-2}{\cdot}eV^{-1}$. It showed $SiO_2$ using $CO_2$ gas was about 2.55 times better than $N_2O$ gas. After 10 years when the thin film was applied to metal/insulator/semiconductor(MIS)-nonvolatile memory(NVM), MIS NVM using $SiO_2$($CO_2$) on tunneling layer had window memory of 2.16 V with 60% retention at bias voltage from +16 V to -19 V. However, MIS NVM applied $SiO_2$($N_2O$) to tunneling layer had 2.48 V with 61% retention at bias voltage from +20 V to -24 V. The results show $SiO_2$ using $CO_2$ decrease the $D_{it}$ and it improves the operating voltage.

• The Journal of Advanced Prosthodontics
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• v.6 no.4
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• pp.285-294
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• 2014

PURPOSE. The purpose of this study was to evaluate the properties of a porous zirconia scaffold coated with bioactive materials and compare the in vitro cellular behavior of MC3T3-E1 preosteoblastic cells to titanium and zirconia disks and porous zirconia scaffolds. MATERIALS AND METHODS. Titanium and zirconia disks were prepared. A porous zirconia scaffold was fabricated with an open cell polyurethane disk foam template. The porous zirconia scaffolds were coated with ${\beta}$-TCP, HA and a compound of ${\beta}$-TCP and HA (BCP). The characteristics of the specimens were evaluated using scanning electron microscopy (SEM), energy dispersive x-ray spectrometer (EDX), and x-ray diffractometry (XRD). The dissolution tests were analyzed by an inductively coupled plasma spectrometer (ICP). The osteogenic effect of MC3T3-E1 cells was assessed via cell counting and reverse transcriptase-polymerase chain reaction (RT-PCR). RESULTS. The EDX profiles showed the substrate of zirconia, which was surrounded by the Ca-P layer. In the dissolution test, dissolved $Ca^{2+}$ ions were observed in the following decreasing order; ${\beta}$-TCP > BCP > HA (P<.05). In the cellular experiments, the cell proliferation on titanium disks appeared significantly lower in comparison to the other groups after 5 days (P<.05). The zirconia scaffolds had greater values than the zirconia disks (P<.05). The mRNA level of osteocalcin was highest on the non-coated zirconia scaffolds after 7 days. CONCLUSION. Zirconia had greater osteoblast cell activity than titanium. The interconnecting pores of the zirconia scaffolds showed enhanced proliferation and cell differentiation. The activity of osteoblast was more affected by microstructure than by coating materials.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.91-96
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• 1997

The electrical characteristics and the plasma parameters of planar inductively coupled plasmas (ICP) have been measured. The resistance of the total load including the coil and the plasma varied from 1 to 4 W and the inductance from 1.5 m to 2 mH when the power was changed from 100 to 1000 W and the pressure from 1 to 10 mTorr. The density of electron measured by Langmuir probe was over $10^{11}/\textrm{cm}^3$ and the temperature varied between 3 and 5 eV as the process conditions were changed. Bias modulation was adopted as a new method to improve the selectivity of $SiO_2$on Si in $C_4F_8$ (octafluorocyclobutane) plasma. The selectivity was improved as the duty ratio decreased, but the etch rate of $SiO_2$decreased below 400$\AA$/min. $H_2$addition to $C_4F_8$ plasma showed that the etch selectivity could be higher than 50 and the etch rate of $SiO_2$over 2000$\AA$/min when 60% $H_2$was added.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.287-287
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• 2011

ITRS(international technology roadmap for semiconductors)에 따르면 MOS (metal-oxide-semiconductor)의 CD(critical dimension)가 45 nm node이하로 줄어들면서 poly-Si/SiO2를 대체할 수 있는 poly-Si/metal gate/high-k dielectric이 대두되고 있다. 일반적으로 metal gate를 식각시 정확한 CD를 형성시키기 위해서 plasma를 이용한 RIE(reactive ion etching)를 사용하고 있지만 PIDs(plasma induced damages)의 하나인 PICD(plasma induced charging damage)의 발생이 문제가 되고 있다. PICD의 원인으로 plasma의 non-uniform으로 locally imbalanced한 ion과 electron이 PICC(plasma induced charging current)를 gate oxide에 발생시켜 gate oxide의 interface에 trap을 형성시키므로 그 결과 소자 특성 저하가 보고되고 있다. 그러므로 본 연구에서는 이에 차세대 MOS의 metal gate의 식각공정에 HDP(high density plasma)의 ICP(inductively coupled plasma) source를 이용한 중성빔 시스템을 사용하여 PICD를 줄일 수 있는 새로운 식각 공정에 대한 연구를 하였다. 식각공정조건으로 gas는 HBr 12 sccm (80%)와 Cl2 3 sccm (20%)와 power는 300 w를 사용하였고 200 eV의 에너지로 식각공정시 TEM(transmission electron microscopy)으로 TiN의 anisotropic한 형상을 볼 수 있었고 100 eV 이하의 에너지로 식각공정시 하부층인 HfO2와 높은 etch selectivity로 etch stop을 시킬 수 있었다. 실제 공정을 MOS의 metal gate에 적용시켜 metal gate/high-k dielectric CMOSFETs의 NCSU(North Carolina State University) CVC model로 effective electric field electron mobility를 구한 결과 electorn mobility의 증가를 볼 수 있었고 또한 mos parameter인 transconductance (Gm)의 증가를 볼 수 있었다. 그 원인으로 CP(Charge pumping) 1MHz로 gate oxide의 inteface의 분석 결과 이러한 결과가 gate oxide의 interface trap양의 감소로 개선으로 기인함을 확인할 수 있었다.