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Effect of DC bias on structure of hydrogenated amorphous silicon and microcrystalline silicon

  • 이윤정;주성재;임승현;윤의준
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.84-84
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    • 2000
  • 수소화된 비정질 실리콘(a-Si:H)과 미세결정질 실리콘 ($\mu$c-Si:H)은 저온.건식 공정인 PECVD로 값싼 유리 기판을 사용하여 넓은 면적에 증착이 가능하다는 큰 장점으로 인해 광전소자(photovoltaic device)와 박막 트랜지스터(TFTs)등에 폭넓게 응용되어 왔으며 최근에는 nm 크기의 실리콘 결정(nc-Si)에서 가시광선 영역의 발광 현상이 발견됨에 따라 광소자로서의 특성을 제어하기 위해서는 성장 조건과 공정 변수에 따른 구조 변화에 대한 연구가 선행되어야 한다. 본 연구에서는 UHV-ECR-PECVD 법을 이용하여 H2로 희석된 SiH4로부터 a-Si:H과 $\mu$c-Si:H를 증착하였다. 그림 1은 SiH4 20sccm/H2 50sccm/25$0^{\circ}C$에서 기판의 DC bias를 변화시키면서 박막을 증착시킬 때 나타나는 박막의 구조 변화를 raman spectrum의 To phonon peak의 위치와 반가폭의 변화로 나타낸 것이다. 비정질 실리콘 박막은 DC bias를 증가시킴에 따라 무질서도가 증가하다가 어떤 critical DC bias에서 최대치를 이룬후 다시 질서도가 증가한다. 이온의 충격력에 의해 박막내에 응력이 축적되면 박막의 에너지 상태가 높아지고 이 축적된 응력이 ordering에 대한 에너지 장벽을 넘을 수 있을 만큼 커지게 되면 응력이 풀리면서 ordering이 가능해지는 것으로 생각된다. 그림 2는 수소 결합 형태의 변화이다. 박막의 무질서도가 증가할 경우 알려진 바와 같이 2000cm-1근처의 peak은 감소하고 2100cm-1 부근이 peak이 증가하는 현상을 보였다. 본 논문에서는 여러 공정 변수, 특히 DC bias에 따르는 박막의 구조 변화와 다른 성장 조건(온도, 유량비)이 critical DC bias나 결정화, 결정성 등에 미치는 영향에 대한 분석결과를 보고하고자 한다.등을 이용하여 광학적 밴드갭, 광흡수 계수, Tauc Plot, 그리고 파장대별 빛의 투과도의 변화를 분석하였으며 각 변수가 변화함에 따라 광학적 밴드갭의 변화를 정량적으로 조사함으로써 분자결합상태와 밴드갭과 광 흡수 계수간의상관관계를 규명하였고, 각 변수에 따른 표면의 조도를 확인하였다. 비정질 Si1-xCx 박막을 증착하여 특성을 분석한 결과 성장된 박막의 성장률은 Carbonfid의 증가에 따라 다른 성장특성을 보였고, Silcne(SiH4) 가스량의 감소와 함께 박막의 성장률이 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 줄어들어 성장률이 Silane가스량에 의해 지배됨을 볼 수 있다. UV-VIS spectrophotometer에 의한 비정질 SiC 박막의 투과도와 파장과의 관계에 있어 유리를 기판으로 사용했으므로 유리의투과도를 감안했으며, 유리에 대한 상대적인 비율 관계로 투과도를 나타냈었다. 또한 비저질 SiC 박막의 흡수계수는 Ellipsometry에 의해 측정된 Δ과 Ψ값을 이용하여 시뮬레이션한 결과로 비정질 SiC 박막의 두께를 이용하여 구하였다. 또한 Tauc Plot을 통해 박막의 optical band gap을 2.6~3.7eV로 조절할 수 있었다. 20$0^{\circ}C$이상으로 증가시켜도 광투과율은 큰 변화를 나타내지 않았다.부터 전분-지질복합제의 형성 촉진이 시사되었다.이것으로 인하여 호화억제에 의한 노화 방지효과가 기대되었지만 실제로 빵의 노화는 현저히 진행되었다. 이것은 quinua 대체량 증가에 따른 반죽의 안정성이 저하되어 버린 것으로 생각되어진다. 더욱이 lipase를 첨가하면 반죽이 분화하는 경향이 보여졌지만 첨가량 75ppm에 있어서 상당히 비용적의 증대가 보였다. 이것은 lipase의 가수분해에 의해

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Thickness Determination of Ultrathin Gate Oxide Grown by Wet Oxidation

  • 장효식;황현상;이확주;조현모;김현경;문대원
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.107-107
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    • 2000
  • 최근 반도체 소자의 고집적화 및 대용량화의 경향에 다라 MOSFET 소자 제작에 이동되는 게이트 산화막의 두께가 수 nm 정도까지 점점 얇아지는 추세이고 Giga-DRAM급 차세대 UNSI소자를 제작하기 위해 5nm이하의 게이트 절연막이 요구된다. 이런 절연막의 두께감소는 게이트 정전용량을 증가시켜 트랜지스터의 속도를 빠르게 하며, 동시에 저전압동작을 가능하게 하기 때문에 게이트 산화막의 두께는 MOS공정세대가 진행되어감에 따라 계속 감소할 것이다. 따라서 절연막 두께는 소자의 동작 특성을 결정하는 중요한 요소이므로 이에 대한 정확한 평가 방법의 확보는 공정 control 측면에서 필수적이다. 그러나, 절연막의 두께가 작아지면서 게이트 산화막과 crystalline siliconrksm이 계면효과가 박막의 두께에 심각한 영향을 주기 때문에 정확한 두께 계측이 어렵고 계측방법에 따라서 두께 계측의 차이가 난다. 따라서 차세대 반도체 소자의 개발 및 양산 체계를 확립하기 위해서는 산화막의 두께가 10nm보다 작은 1nm-5nm 수준의 박막 시료에 대한 두께 계측 방법이 확립이 되어야 한다. 따라서, 본 연구에서는 습식 산화 공정으로 제작된 3nm-7nm 의 게이트 절연막을 현재까지 알려진 다양한 두께 평가방법을 비교 연구하였다. 절연막을 MEIS (Medim Energy Ion Scattering), 0.015nm의 고감도를 가지는 SE (Spectroscopic Ellipsometry), XPS, 고분해능 전자현미경 (TEM)을 이용하여 측정 비교하였다. 또한 polysilicon gate를 가지는 MOS capacitor를 제작하여 소자의 Capacitance-Voltage 및 Current-Voltage를 측정하여 절연막 두께를 계산하여 가장 좋은 두께 계측 방법을 찾고자 한다.다. 마이크로스트립 링 공진기는 링의 원주길이가 전자기파 파장길이의 정수배가 되면 공진이 일어나는 구조이다. Fused quartz를 기판으로 하여 증착압력을 변수로 하여 TiO2 박막을 증착하였다. 그리고 그 위에 은 (silver)을 사용하여 링 패턴을 형성하였다. 이와 같이 공진기를 제작하여 network analyzer (HP 8510C)로 마이크로파 대역에서의 공진특서을 측정하였다. 공진특성으로부터 전체 품질계수와 유효유전율, 그리고 TiO2 박막의 품질계수를 얻어내었다. 측정결과 rutile에서 anatase로 박막의 상이 변할수록 유전율은 감소하고 유전손실은 증가하는 결과를 나타내었다.의 성장률이 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 줄어들어 성장률이 Silane가스량에 의해 지배됨을 볼 수 있다. UV-VIS spectrophotometer에 의한 비정질 SiC 박막의 투과도와 파장과의 관계에 있어 유리를 기판으로 사용했으므로 유리의투과도를 감안했으며, 유리에 대한 상대적인 비율 관계로 투과도를 나타냈었다. 또한 비저질 SiC 박막의 흡수계수는 Ellipsometry에 의해 측정된 Δ과 Ψ값을 이용하여 시뮬레이션한 결과로 비정질 SiC 박막의 두께를 이용하여 구하였다. 또한 Tauc Plot을 통해 박막의 optical band gap을 2.6~3.7eV로 조절할 수 있었다. 20$0^{\circ}C$이상으로 증가시켜도 광투과율은 큰 변화를 나타내지 않았다.부터 전분-지질복합제의 형성 촉진이 시사되었다.이것으로 인하여 호화억제에 의한 노화 방지효과가 기대되었지만 실제로 빵의 노화는 현저히 진행되었다

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Fabrication of Large Area Transmission Electro-Absorption Modulator with High Uniformity Backside Etching

  • Lee, Soo Kyung;Na, Byung Hoon;Choi, Hee Ju;Ju, Gun Wu;Jeon, Jin Myeong;Cho, Yong Chul;Park, Yong Hwa;Park, Chang Young;Lee, Yong Tak
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.220-220
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    • 2013
  • Surface-normal transmission electro-absorption modulator (EAM) are attractive for high-definition (HD) three-dimensional (3D) imaging application due to its features such as small system volume and simple epitaxial structure [1,2]. However, EAM in order to be used for HD 3D imaging system requires uniform modulation performance over large area. To achieve highly uniform modulation performance of EAM at the operating wavelength of 850 nm, it is extremely important to remove the GaAs substrate over large area since GaAs material has high absorption coefficient below 870 nm which corresponds to band-edge energy of GaAs (1.424 eV). In this study, we propose and experimentally demonstrate a transmission EAM in which highly selective backside etching methods which include lapping, dry etching and wet etching is carried out to remove the GaAs substrate for achieving highly uniform modulation performance. First, lapping process on GaAs substrate was carried out for different lapping speeds (5 rpm, 7 rpm, 10 rpm) and the thickness was measured over different areas of surface. For a lapping speed of 5 rpm, a highly uniform surface over a large area ($2{\times}1\;mm^2$) was obtained. Second, optimization of inductive coupled plasma-reactive ion etching (ICP-RIE) was carried out to achieve anisotropy and high etch rate. The dry etching carried out using a gas mixture of SiCl4 and Ar, each having a flow rate of 10 sccm and 40 sccm, respectively with an RF power of 50 W, ICP power of 400 W and chamber pressure of 2 mTorr was the optimum etching condition. Last, the rest of GaAs substrate was successfully removed by highly selective backside wet etching with pH adjusted solution of citric acid and hydrogen peroxide. Citric acid/hydrogen peroxide etching solution having a volume ratio of 5:1 was the best etching condition which provides not only high selectivity of 235:1 between GaAs and AlAs but also good etching profile [3]. The fabricated transmission EAM array have an amplitude modulation of more than 50% at the bias voltage of -9 V and maintains high uniformity of >90% over large area ($2{\times}1\;mm^2$). These results show that the fabricated transmission EAM with substrate removed is an excellent candidate to be used as an optical shutter for HD 3D imaging application.

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A Practical Algorithm to Simulate Erosion of On-Shore Zone (실용적 해안선 후퇴 반영 알고리즘)

  • Kim, Hyoseob;Lee, Jungsu;Jin, Jae-Youll;Jang, Changhwan
    • Journal of Wetlands Research
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    • v.15 no.3
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    • pp.423-430
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    • 2013
  • An algorithm to allow shoreline movement during numerical experiment on sediment transport, deposition or resuspension for general coastal morphology is proposed here. The bed slope near shoreline, i.e. mean sea level, is influenced by bed material, tidal current, waves, and wave-induced current, but has been reported to remain within a stable range. Its annual variation is not large, either. The algorithm is adjusting the bathymetry, if the largest bed slope within shoreline band exceeds a given bed slope due to continuous erosion at zones below the shoreline. This algorithm automatically describes retreat of shoreline caused by erosion, when used within a numerical system. The algorithm was tested to a situation which includes a continuous dredging at a point, and showed satisfactory development of concentric circle contours. Next, the algorithm was tested to another situation which includes sinking of eroded part of bed plate, and produced satisfactory results, too. Finally, the algorithm was tested to a movable-bed laboratory experimental conditions. The shoreline movement behind detached breakwater was reasonably reproduced with this algorithm.

A Pilot Study on Environmental Understanding and Estimation of the Nak-Dong River Basin Using Fuyo-1 OPS Data (Fuyo-1 OPS 자료를 이용한 낙동강 하류지역의 환경계측 시고)

  • Kim, Cheon
    • Korean Journal of Remote Sensing
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    • v.12 no.2
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    • pp.169-198
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    • 1996
  • The objectives of this investigation are : 1. To analyze spectral signature and the associated vegetation index for geometric illumination conditions inf1uenced by low solar elevation and high slope orientations in mountainous forest. 2. To assess the accuracy of the spectral angle mapper classification for the a winter land cover in comparison with the maximum likelihood classification. 3. To produce the image of water quality and water properties that could be used to estimate the water pollution sources and the tide-included by turbid water in estuarine and coastal areas. These objectives are to characterize environmental and ecological monitoring applications of the Nak-Dong River Basin by using Fuyo-1 OPS VNIR data acquired on December 26, 1992. The results of this paper are as follows : 1. The spectral digital numbers and vegetation indexes (NDVI and TVI) of mountainous forest are higher on the slope facing the sun than on the slope hidden the sun under low sun elevation condition. 2. The spectral angle mapper algorithm produces a more accurate land cover classification of areas with steep slope, various aspects and low solar elevation than the maximum likelihood classifier. 3. The maximum likelihood classification images can be used for identifying the location and movement of both freshwater and salt water, regardless of geometric illumination conditions. 4. The color-coded density sliced image of selected water bodies by using the near-infrared band 3 can provide distribution of the water quality of the Lower Nak-Dong River. 5. The color-coded normalized difference vegetation index image of the selected mountain forest is suitable to classify winter vegetation cover types, i.e., forest canopy densities for slope orientations.

Physical Properties of the Nonstoichiometric Perovskite $Dy_{1-x}Sr_xCoO_{3-y}$ System

  • 정수경;김민규;김규홍;여철현
    • Bulletin of the Korean Chemical Society
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    • v.17 no.9
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    • pp.794-798
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    • 1996
  • Solid solutions of the nonstoichiometric Dy1-xSrxCoO3-y system with the compositions of x=0.00, 0.25, 0.50, 0.75, and 1.00 have been synthesized by the solid state reaction at 1000 ℃ under atmospheric air pressure. The crystallographic structures of the solid solutions are analyzed by the powder X-ray diffraction patterns at room temperature. The analyses assign the compositions of x=0.00 and 0.25 to the orthorhombic system with space group of Pbnm/D2h16, the compositions of x=0.50 and 0.75 to the tetragonal system like a typical SrCoO2.86, and the composition of x=l.00 or SrCoO2.50 to the brownmillerite type system with space group of I**a. The reduced lattice volumes increase with x value due to the larger radius of Sr2+ ion than that of Dy3+ ion. The mole ratio of Co4+ ion to total Co ion with mixed valence state between Co3+ and Co4+ ions at B sites or τ value has been determined by an iodometric titration. All the samples except for the DyCoO3 compound show the mixed valnce state and thus the composition of x=0.50 has the maximum τ value in the system. The oxygen vacancies increasing with x value are randomly distributed over the crystal lattice except for the composition of x=l.00 which have the ordering of the oxygen vacancies. The nonstoichiometric chemical formulas of the Dy1-xSrxCo3+1-τCo4+τO3-(x-τ)/2 system are formulated from the x, τ, and y values. The electrical conductivity in the temperature range of 100 to 900 K increases with τ value linearly because of positive holes of the Co4+ ions in π* band as a conducting carrier. The activation energy of the x=0.50 as Ea=0.17 eV is minimum among other compouds. Broad and high order transition due to the overlap between σ* and π* bands broadened by the thermal activation is observed near 1000 K and shows a low temperature-semiconducting behavior. Magnetic properties following the Currie-Weiss law show the low to high spin transition in the cobaltate perovskite. Especially, the composition of x=0.75 presents weak ferromagnetic behavior due to the Co3+-O2--Co4+ indirect superexchange interaction.

Increased Readmission Risk and Healthcare Cost for Delirium Patients without Immediate Hospitalization in the Emergency Department

  • Ma, I Chun;Chen, Kao Chin;Chen, Wei Tseng;Tsai, Hsin Chun;Su, Chien-Chou;Lu, Ru-Band;Chen, Po See;Chang, Wei Hung;Yang, Yen Kuang
    • Clinical Psychopharmacology and Neuroscience
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    • v.16 no.4
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    • pp.398-406
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    • 2018
  • Objective: Hospitalization of patients with delirium after visiting the emergency department (ED) is often required. However, the readmission risk after discharge from the ED should also be considered. This study aimed to explore whether (i) immediate hospitalization influences the readmission risk of patients with delirium; (ii) the readmission risk is affected by various risk factors; and (iii) the healthcare cost differs between groups within 28 days of the first ED visit. Methods: Using the National Health Insurance Research Database, the data of 2,780 subjects presenting with delirium at an ED visit from 2000 to 2008 were examined. The readmission risks of the groups of patients (i.e., patients who were and were not admitted within 24 hours of an ED visit) within 28 days were compared, and the effects of the severities of different comorbidities (using Charlson's comorbidity index, CCI), age, gender, diagnosis and differences in medical healthcare cost were analyzed. Results: Patients without immediate hospitalization had a higher risk of readmission within 3, 7, 14, or 28 days of discharge from the ED, especially subjects with more severe comorbidities ($CCI{\geq}3$) or older patients (${\geq}65years$). Subjects with more severe comorbidities or older subjects who were not admitted immediately also incurred a greater healthcare cost for re-hospitalization within the 28-day follow-up period. Conclusion: Patients with delirium with a higher CCI or of a greater age should be carefully considered for immediate hospitalization from ED for further examination in order to reduce the risk of re-hospitalization and cost of healthcare.

Feasibility of hearing aid gain self-adjustment using speech recognition (말소리 인지를 이용한 보청기 이득 자가 조절의 실현)

  • Yun, Donghyeon;Shen, Yi;Zhang, Zhuohuang
    • The Journal of the Acoustical Society of Korea
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    • v.41 no.1
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    • pp.76-86
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    • 2022
  • Personal hearing devices, such as hearing aids, may be fine-tuned by allowing the users to conduct self-adjustment. Two self-adjustment procedures were developed to collect the listener preferred gains in six octave-frequency bands from 0.25 kHz to 8 kHz. These procedures were designed to allow rapid exploration of a multi-dimensional parameter space using a simple, one-dimensional user control interface (i.e., a programmable knob). The two procedures differ in whether the user interface controls the gains in all frequency bands simultaneously (Procedure A) or only the gain in one frequency band (Procedure B) on a given trial. Monte-Carlo simulations suggested that for both procedures the gain preference identified by simulated listeners rapidly converged to the ground-truth preferred gain profile over the first 20 trials. Initial behavioral evaluations of the self-adjustment procedures, in terms of test-retest reliability, were conducted using 20 young, normal-hearing listeners. Each estimate of the preferred gain profile took less than 20 minutes. The deviation between two separate estimates of the preferred gain profile, conducted at least a week apart, was about 10 dB ~ 15 dB.

Nature of the Interfacial Regions in the Antiferromagnetically-coupled Fe/Si Multilayered Films

  • Moon, J.C.;Y.V. Kudryavtsev;J.Y.Rhee;Kim, K.W.;Lee, Y.P.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.174-174
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    • 2000
  • A strong antiferromagnetic coupling in Fe/Si multilayered films (MLF) had been recently discovered and much consideration has been given to whether the coupling in the Fe/Si MLF system has the same origin as the metal/metal MLF. Nevertheless, the nature of the interfacial ron silicide is still controversial. On one hand, a metal/ semiconductor structure was suggested with a narrow band-gap semiconducting $\varepsilon$-FeSi spacer that mediates the coupling. However, some features show that the nature of coupling can be well understood in terms of the conventional metal/metal multilayered system. It is well known that both magneto-optical (MO) and optical properties of a metal depend strongly on their electronic structure that is also correlated with the atomic and chemical ordering. In this study, the nature of the interfacial regions is the Fe/Si multilayers has been investigated by the experimental and computer-simulated MO and optical spectroscopies. The Fe/Si MLF were prepared by rf-sputtering onto glass substrates at room temperature with the number of repetition N=50. The thickness of Fe sublayer was fixed at 3.0nm while the Si sublayer thickness was varied from 1.0 to 2.0 nm. The topmost layer of all the Fe/Si MLF is Fe. In order to carry out the computer simulations, the information on the MO and optical parameters of the materials that may constitute a real multilayered structure should be known in advance. For this purpose, we also prepared Fe, Si, FeSi2 and FeSi samples. The structural characterization of Fe/Si MLF was performed by low- and high -angle x-ray diffraction with a Cu-K$\alpha$ radiation and by transmission electron microscopy. A bulk $\varepsilon$-FeSi was also investigated. The MO and optical properties were measured at room temperature in the 1.0-4.7 eV energy range. The theoretical simulations of MO and optical properties for the Fe/Si MLF were performed by solving exactly a multireflection problem using the scattering matrix approach assuming various stoichiometries of a nonmagnetic spacer separating the antiferromagnetically coupled Fe layers. The simulated spectra of a model structure of FeSi2 or $\varepsilon$-FeSi as the spacer turned out to fail in explaining the experimental spectra of the Fe/Si MLF in both intensity and shape. Thus, the decisive disagreement between experimental and simulated MO and optical properties ruled out the hypothesis of FeSi2 and $\varepsilon$-FeSi as the nonmagnetic spacer. By supposing the spontaneous formation of a metallic ζ-FeSi, a reasonable agreement between experimental and simulated MO and optical spectra was obtained.

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QRAS-based Algorithm for Omnidirectional Sound Source Determination Without Blind Spots (사각영역이 없는 전방향 음원인식을 위한 QRAS 기반의 알고리즘)

  • Kim, Youngeon;Park, Gooman
    • Journal of Broadcast Engineering
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    • v.27 no.1
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    • pp.91-103
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    • 2022
  • Determination of sound source characteristics such as: sound volume, direction and distance to the source is one of the important techniques for unmanned systems like autonomous vehicles, robot systems and AI speakers. There are multiple methods of determining the direction and distance to the sound source, e.g., using a radar, a rider, an ultrasonic wave and a RF signal with a sound. These methods require the transmission of signals and cannot accurately identify sound sources generated in the obstructed region due to obstacles. In this paper, we have implemented and evaluated a method of detecting and identifying the sound in the audible frequency band by a method of recognizing the volume, direction, and distance to the sound source that is generated in the periphery including the invisible region. A cross-shaped based sound source recognition algorithm, which is mainly used for identifying a sound source, can measure the volume and locate the direction of the sound source, but the method has a problem with "blind spots". In addition, a serious limitation for this type of algorithm is lack of capability to determine the distance to the sound source. In order to overcome the limitations of this existing method, we propose a QRAS-based algorithm that uses rectangular-shaped technology. This method can determine the volume, direction, and distance to the sound source, which is an improvement over the cross-shaped based algorithm. The QRAS-based algorithm for the OSSD uses 6 AITDs derived from four microphones which are deployed in a rectangular-shaped configuration. The QRAS-based algorithm can solve existing problems of the cross-shaped based algorithms like blind spots, and it can determine the distance to the sound source. Experiments have demonstrated that the proposed QRAS-based algorithm for OSSD can reliably determine sound volume along with direction and distance to the sound source, which avoiding blind spots.