• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.123-124
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• 2007

A silver indium sulfide ($AgInS_2$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the liteniture. The grown $AgInS_2$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-to-band transition. The valence band splitting of $AgInS_2$ was investigated by means of the photocurrent measurement. The temperature dependence of the energy band gap of the $AgInS_2$ obtained from the photocurrent spectrum was well described by the Varshni's relation, $E_g(T)=\;E_g(0)\;eV-(7.78\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;116\;K\;K)$. Also, Eg(0) is the energy band gap at 0 K, which is estimated to be 2.036 eV at the valence band state A and 2.186 eV at the valence band state B.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.347-351
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• 2003

A p-$CdIn_2Te_4$ single crystal has been grown by the Bridgman method without a seed crystal in a tree-stage vertical electric furnace. From photocurrent measurements, it was found that three peaks, A, B, and C, corresponded to an intrinsic transition due to the band-to-band transition from the valence band states ${\Gamma}_7(A),\;{\Gamma}_6(B),\;and\;{\Gamma}_7(C)$ to the conduction band state ${\Gamma}_6$, respectively. Also, the valence band splitting of the $CdIn_2Te_4$ crystal has been confirmed by photocurrent spectroscopy. The crystal field splitting and the spin orbit splitting were obtained to be 0.2360 and 0.1119 eV, respectively. Also, the temperature dependence of the band gap energy of the $CdIn_2Te_4$ crystal has been driven as the following equation of $E_g(T)\;=E_g(0)\;-\;(9.43\;{\times}\;10^{-3})T^2/(2676\;+\;T)$. In this equation, the Eg(0) was estimated to be 1.4750, 1.7110, and 1.8229 eV at the valence band state A, B, and C, respectively. The band gap energy of the p-$CdIn_2Te_4$ at room temperature was determined to be 1.2023 eV.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 제4회 영호남학술대회 논문집
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• pp.92-96
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• 2002

Hot wall epitaxy 방법을 이용하여 chalcopyrite 구조를 가진 고품질의 $AgInS_{2}$ 박막을 성장 하였다. 광전류 스펙트럼을 측정한 결과， 30K에서 300K까지는 단지 A 와 B 두개의 봉우리가 관측되었고 반면에 10K에서는 A,B,C 세 개의 봉우리가 관측되었다. 이때 이들 봉우리들은 band-to-band 전이에 기인하는 것으로 관측되었다. 광전류 측정으로부터 $AgInS_{2}$의 가전자대 갈라짐이 측정되었고 이로부터 10k에서 결정장에 의한 갈라짐 $D_{cr}$과 스핀궤도에 의한 갈라짐 $D_{so}$은 각각 0.150eV와 0.009eV로 관측되었다. 또한 에너지 밴드갭의 온도 의존성 $E_{g}(T)$에 대하여 연구하였고 성장된 $AgInS_{2}$ 박막의 에너지 밴드갭은 1.868eV 임을 알았다.

• 한국결정성장학회지
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• 제26권6호
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• pp.225-231
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• 2016

GaSb 기판위에 Al이 도핑된 GaInAsSb(Al-GaInAsSb)에 대한 최고 가전대 준위(VBM)와 최저 전도대 준위(CBM) 변화를 범용적 밀접결합방법에 근거한 해석적 근사법을 이용하여 계산하였다. GaSb와 Al-GaInAsSb 의 상대적 VBM과 CBM 준위에 따라 경계면에서의 밴드정렬 타입과 가전자대 오프셋(VBO)과 전도대 오프셋(CBO)이 결정된다. 본 논문에서는 Al 도핑이 GaInAsSb의 양이온 자리에 치환된다는 가정하에 이론이 전개 되었으며, Al은 부식등으로 결정의 질을 떨어트릴 수 있는 요인이 되므로 20 %까지 제한하였다. Al 도핑 결과, 전 구간에서 제 II 형의 밴드정렬형태를 갖게 되며, 밴드갭이 증가되는 반면 VBO와 CBO 는 감소됨을 알수 있었다. CBO 에 대한 감소비율 VBO 보다 더 크므로, Al 도핑은 경계면에서의 전자 콘트롤에 더 효율적으로 작용함을 알 수 있었다. Al-GaInAsSb은 전 구간에서 $E({\Gamma})$가 E(L)이나 E(X)보다 낮은 직접 갭을 나타 내고 있지만, Sb 성분이 많아지면(70~80 % 이상) E(L)과 E(X)이 $E({\Gamma})$에 가까워져서 전자 이동도에 영향을 주어 광학적 효율이 다소 떨어질 수 있음을 알 수 있었다.

• 한국전자파학회논문지
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• 제18권2호
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• pp.227-232
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• 2007

본 논문에서는 이동용 인터넷 및 방송에 사용되는 주파수 대역의 송수신이 가능한 삼중 대역 안테나를 제안하였다. 이동용 방송으로 T-DMB(Band-III), DAB(L-Band) 그리고 이동용 인터넷으로 Wibro를 선택하였다. 제안된 안테나의 크기는 $10{\times}74{\times}0.6[mm^3]$으로 T-DMB 안테나의 1/4 파장의 길이가400 mm임을 비추어 볼 때 1/20 파장의 길이로 약 81.5%가 소형화가 되었다. 제작된 안테나는 T-DMB 대역에서 협대역이지만 수신 환경을 고려해 볼 때 현재 방송 서비스 중인 8 채널($180{\sim}186$ MHz)와 12 채널($206{\sim}210$ MHz)에서 충분히 수신 가능하다. 또한 이상적인 다이폴 안테나와 비교했을 때 DAB와 Wibro 대역에서는 동등한 특성을 갖는다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.376-376
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• 2010

The single crystals of p-$CdIn_2Te_4$ were grown by the Bridgman method without the seed crystal. From photocurrent measurements, it was found that three peaks, A, B, and C, correspond to the intrinsic transition from the valence band states of $\Gamma_7$(A), $\Gamma_6$(B), and $\Gamma_7$(C) to the conduction band state of $\Gamma_6$, respectively. The crystal field splitting and the spin orbit splitting were found to be 0.2360 and 0.1119 eV, respectively, from the photocurrent spectroscopy. The temperature dependence of the $CdIn_2Te_4$ band gap energy was given by the equation of $E_g(T)=E_g(0)-(9.43{\times}10^{-3})T^2/(2676+T)$. $E_g$(0) was estimated to be 1.4750, 1.7110, and 1.8229 eV at the valence band states of A, B, and C, respectively. The band gap energy of p-$CdIn_2Te_4$ at room temperature was determined to be 1.2023 eV.

• 한국재료학회지
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• 제12권6호
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• pp.431-435
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• 2002

The dark current and photocurrent(PC) spectrum of Mg-doped GaN thin film were investigated with various bias voltages and temperatures. At high temperature and small bias, the dark current is dominated by holes thermally activated from an acceptor level Al located at about 0.16 eV above the valence band maximum $(E_v)$, The PC peak originates from the electron transition from deep level A2 located at about 0.34 eV above the $E_v$ to the conduction band minimum $(E_ C)$. However, at a large bias voltage, holes thermally activated from A2 to Al experience the field-in-duces tunneling to form one-dimensional defect band at Al, which determines the dark current. The PC peak associated with the transition from Al to $E_ C$ is also observed at large bias voltages owing to the extended recombination lifetime of holes by the tunneling. In the near infrared region, a strong PC peak at 1.20 eV appears due to the hole transition from deep donor/acceptor level to the valence band.

• Advances in nano research
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• 제9권2호
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• pp.105-112
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• 2020

Silicene is a two-dimensional (2D) derivative of silicon (Si) arranged in honeycomb lattice. It is predicted to be compatible with the present fabrication technology. However, its gapless properties (neglecting the spin-orbiting effect) hinders its application as digital switching devices. Thus, a suitable band gap engineering technique is required. In the present work, the band structure and density of states of uniformly doped silicene are obtained using the nearest neighbour tight-binding (NNTB) model. The results show that uniform substitutional doping using aluminium (Al) has successfully induced band gap in silicene. The band structures of the presented model are in good agreement with published results in terms of the valence band and conduction band. The band gap values extracted from the presented models are 0.39 eV and 0.78 eV for uniformly doped silicene with Al at the doping concentration of 12.5% and 25% respectively. The results show that the engineered band gap values are within the range for electronic switching applications. The conclusions of this study envisage that the uniformly doped silicene with Al can be further explored and applied in the future nanoelectronic devices.

• E2M - 전기 전자와 첨단 소재
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• 제9권5호
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• pp.445-449
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• 1996

Structural and optical characteristics in Se thin film fabricated by EBE method had been studied. Se thin film was deposited with noncrystalline until substrate temperature of >$100^{\circ}C$ Color of its surface had red genealogy, and its optical energy band gap was about 2.45 eV. But Se film was grown with monoclinic at substrate temperature of over >$150^{\circ}C$ Also, color of its surface had gray genealogy, and its optical energy band gap was about 2.31 eV. Finally, after heat-treatment at >$150^{\circ}C$ for 15 min with substrate temperature of >$100^{\circ}C$ noncrystalline Se was proved to be hexagonal, and color of its surface had dark gray genealogy, and its optical energy band gap was about 2.06 eV. From the results, it was known that Se thin film for photoelectric device with the lowest optical energy band gap was accepted from hexagonal structure.

• 한국의류학회지
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• 제46권2호
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• pp.367-374
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• 2022

Herein, a highly elastic e-textile band with a two-wire transmission line was designed and fabricated for smart clothing applications. A conductive yarn with a very uniform low electrical resistance of 0.0357 Ω/cm was developed and used for the signal and ground lines. To control the elasticity of the e-textile band, spandex yarns were added in the warp direction during knitting and the tension was adjusted. As the length of the e-textile band increased, its RF performance deteriorated. Furthermore, the frequency corresponding to -3 dB S21 was lower in the 30% stretched band than in the unstretched band. For the e-textile bands with lengths 10, 50, and 100 cm, the frequencies corresponding to -3 dB S21 were 107.77, 24.56, and 13.02 MHz when not stretched, and 88.74, 22.02, and 12.60 MHz when stretched by 30%. The fabricated bands were flatter, more flexible, and more elastic than transmission line cables; thus, they can be easily integrated into wearables and smart clothing. However, to increase RF performance and achieve optimum utilization, future studies must focus on the fabrication of transmission lines with lower resistance and reduced distance between the signal and ground lines, and thus the number of transmission lines can be increased.