• 한국강구조학회 논문집
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• 제22권1호
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• pp.33-42
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• 2010

막구조의 설계에서 막재료의 효율적인 사용을 위해서는 측지선에 의한 재단도 해석을 수행해야 한다. 막구조의 측지선 결정방법은 크게 측지요소(geodesic element)를 이용한 비선형 형상해석에 의한 방법과 임의의 곡면 형상에 대한 측지선 탐색에 의한 방법으로 나눌 수 있는데, 현재까지 이 두 가지 해석법은 모두 3절점요소에 대한 적용알고리즘 만이 제시되었고, 4절점 요소에 대한 해석법은 제시되지 않았다. 이는 막구조의 설계에서 4절점 요소의 적용을 어렵게 하는 가장 큰 요인이라고 할 수 있다. 본 연구에서는 3절점, 4절점 평면요소에 동시에 적용 가능한 측지선 결정알고리즘을 제시한다. 이를 위해 저자의 이전 연구를 발전시켜 명시적 비선형 해석법인 동적이완법을 비선형 측지선 형상해석에 적용하였다. 또한 3절점요소 뿐만 아니라 4절점요소에 대해서도 측지요소의 도입에 의한 형상해석이 가능하도록 하였으며, 4절점요소와 측지선요소에 의한 비선형 형상해석 및 재단도 해석예제를 통하여 본 연구에서 제시한 알고리즘의 정확성 및 효율성을 검증하였다. 따라서 본 연구에서 제안한 측지선 형상해석알고리즘은 형상해석, 응력해석, 재단도 해석과 관련된 일련의 해석과정에 대한 4절점요소의 적용성을 높일 수 있을 것으로 사료된다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1214-1218
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• 2005

As demands for precision parts are increased, existing methods to fabricate them such as MEMS, LIGA technology have the technical limitations like high precision, high functionality and ultra miniaturization. A micro-stereolithography technology based on $DMD^{TM}$(Digital Micromirror Device) can meet these demands. In this technology, STL file is the standard format as the same of conventional rapid prototyping system, and 3D part is fabricated by stacking layers that are sliced as 2D section from STL file. Whereas in conventional method, the resin surface is cured as scanning laser beam spot according to the section shape, but in this research, we use integral process which enables to cure the resin surface at one time. In this paper, we deal with the dynamic pattern generation and $DMD^{TM}$ operation to fabricate micro structures. Firstly, we address effective slicing method of STL file, conversion to bitmap, and dynamic pattern generation. Secondly, we suggest $DMD^{TM}$ operation and optimal support manufacturing for $DMD^{TM}$ mounting. Thirdly, we examine the problems on continuous stacking layers, and their improvements in software aspects.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• 제33권4호
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• pp.381-385
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• 2007

Bone is a dynamic organ that bone remodeling occurs throughout life and involves the process in which the bone matrix is broken down through resorption by osteoclasts and then built back again through bone formation by osteoblasts. Usually these two processes balance each other and a stable level of bone mass is maintained. We here discuss transcription factors involved in regulating the osteoblast differentiation pathway. Runx2 is a transcription factor which is essential in skeletal development by regulating osteoblast differentiation and chondrocyte maturation. Its companion subunit, Cbf${\beta}$ is needed for an early step in osteoblast differentiation pathway. Whereas Osterix(Osx) is a new identified osteoblast-specific transcription factor which is required for the differentiation of preosteoblasts into more mature and functional osteoblasts. We also discuss other transcription factors, Msx1 and 2, Dlx5 and 6, Twist, and Sp3 that affect skeletal patterning and development. Understanding the characteristics of mice in which these transcription factors are inactivated should help define their role in bone physiology and pathology of bone defects.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 하계종합학술대회 논문집
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• pp.269-274
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• 1999

As the semiconductor industry enters the next century, we are facing to the technological changes and challenges. Optical lithography has driven by the miniaturisation of semiconductor devices and has been accompanied by an increase in wafer productivity and performance through the reduction of the IC image geometries. In the last decade, DRAM(Dynamic Random Access Memories) have been quadrupoling in level of integration every two years. Korean chip makers have been produced the memory devices, mainly DRAM, which are the driving force of IC＇s(Integrated Circuits) development and are the technology indicator for advanced manufacturing. Therefore, Korean chip makers have an important position to predict and lead the patterning technology. In this paper, we will be discussed the limitations of the optical lithography, such as KrF and ArF. And, post optical lithography technology, such as E-beam lithography, EUV and E-beam Projection Lithography shall be introduced.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2006년도 춘계학술대회논문집
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• pp.922-929
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• 2006

In this study, flow characteristics of the FPN (Fountain Pen Nano-Lithography) using active membrane pumping are investigated. This FPN has integrated chamber, micro channel, and high capacity reservoir for continuous ink feed. The most important aspect in this probe provided control of fluid injection using active membrane pumping in chamber. The flow rates in channel by capillary force are theoretically analyzed, including the control of mass flow rates by deflection of membrane. The above results are compared with numerical simulations that calculated by commercial code, FLUENT. The velocity of fluid in micro channel shows linear behaviors. And the mass flows are proportional to the second order function of pumping pressure that is imposed to membrane.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.385-385
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• 2011

Ion beam Sputtering (IBS)를 이용한 물질 표면의 pattern 형성은 물리적 변수 조절로 손쉽게 nano structure의 크기와 형태를 조절할 수 있어 관심을 받고 있다. 본 연구발표에서는 massless Dirac Fermion behavior로 인한 highly carrier mobility와 같은 특성으로 인해 차세대 device material로 각광받고 있는 Graphene의 layered compound (층상구조) 형태인 HOPG (Highly Ordered Pyrolysis Graphite)에 IBS (Ion beam Sputtering)를 이용해 nano structure가 형성 가능함을 보이고 그 특징에 대해 소개하려 한다. HOPG(0001)를 Sputter 했을 때, 표면에 잘 정렬된 nano ripple pattern이 형성 가능함을 확인하였으며 sputter하는 시간을 변화하면 약 10 nm에서 80 nm까지 wavelength를 조절할 수 있다. 또한 이전의 IBS를 이용한 연구들에서 확인할 수 있는 다른 물질의 곧게 뻗은 nano ripple과는 다르게 ripple의 끝에 nano swab이 생기는 것을 AFM (Atomic Force Microscope)으로 확인할 수 있었다. 이러한 Graphite에서만 나타나는 Sputter에 의한 표면의 변화의 원인을 규명하고자 Sputter가 지속됨에 따라 나타나는 mopology의 roughness와 wavelength의 시간에 따른 dynamic scaling behavior를 확인하였고 그 얼개를 알기 위해 simulation을 수행 하였다.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.214-217
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• 1999

We investigated the quench characteristics of meander line type resistive superconducting fault current limiters based on YBCO thin films grown on 2" diameter LaAlO$_3$ substrates. A gold layer was deposited onto the 0.4 ${\mu}$ m thick YBCO film to disperse the heat generated at hot spots, prior to patterning into 1 mm wide meander lines by photolithography. The limiters were tested with simulated fault currents of various amplitudes. The quench started at 10 A and was completed within 1 msec at the fault current of 65 A$_{peak}$. The dynamic quench characteristics were explained based on the heat conduction within the film and the heat transfer between the film and the surrounding liquid nitrogen. The heat transfer coefficient per unit area was estimated to be 3.0 W/cm$^2$K.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1384-1385
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• 2006

Platinum is a candidate of top and bottom electrode in ferroelectric random access memory and dynamic random access memory. High dielectric materials and ferroelectric materials were generally patterned by plasma etching, however, the low etch rate and low etching profile were repoted. We proposed the damascene process of high dielectric materials and ferroelectric materials for patterning process through the chemical mechanical polishing process. At this time, platinum as a top electrode was used for the stopper for the end-point detection as Igarashi model. Therefore, the control of removal rate in platinum chemical mechanical polishing process was required. In this study, an addition of $H_{2}O_{2}$ oxidizer to alumina slurry could control the removal rate of platinum. The removal rate of platinum rapidly increased with an addition of 10wt% $H_{2}O_{2}$ oxidizer from 24.81nm/min to 113.59nm/min. Within-wafer non-uniformity of platinum after chemical mechanical polishing process was 9.93% with an addition of 5wt% $H_{2}O_{2}$ oxidizer.

• 한국광학회지
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• 제15권1호
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• pp.79-85
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• 2004

후면의 석영면에 위상 패턴을 형성하여 투과율 조절을 구현한 포토마스크에 대해 보고한다. 위상 패턴의 크기와 패턴 조밀도에 따른 조명 동공의 형태 변화에 관한 이론적 결과와 투과율 조절 포토마스크를 사용한 웨이퍼 상 CD(critical dimension) 균일도 개선에 관한 실험적 결과에 대해 기술한다. 투과율 조절을 위한 위상 패턴은 패턴이 형성되지 않은 영역에 대해 180$^{\circ}$의 상대적 위상을 갖도록 석영면을 식각한 콘택홀 형태의 패턴을 사용하였다. 콘택홀 패턴의 크기가 작을수록 본래의 조명동공 형태를 유지하게 되며, 동일한 패턴 조밀도에서 더욱 큰 노광 광세기 저하가 일어남을 알 수 있었다. 패턴 조밀도를 위치별로 변화시켜 CD균일도 개선에 적합한 투과율 분포를 포토마스크 후면에 형성하였다. 투과율 조절 포토마스크를 140nm 디자인 롤을 갖고 있는 DRAM(Dynamic Random Access Memory)의 한 주요 레이어에 적용하여 CD 균일도를 3$\sigma$값으로 24.0nm에서 10.7nm 로 개선할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.433-433
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• 2012

As the requirement in patterning geometry continuously shrinks down, the termination of etch process at the exact time became crucial for the success in nano patterning technology. By virtue of real-time optical emission spectroscopy (OES), etch end point detection (EPD) technique continuously develops; however, it also faced with difficulty in low open ratio etching, typically in self aligned contact (SAC) and one cylinder contact (OCS), because of very small amount of optical emission from by-product gas species in the bulk plasma glow discharge. In developing etching process, one may observe that coupon test is being performed. It consumes costs and time for preparing the patterned sample wafers every test in priority, so the coupon wafer test instead of the whole patterned wafer is beneficial for testing and developing etch process condition. We also can observe that etch open area is varied with the number of coupons on a dummy wafer. However, this can be a misleading in OES study. If the coupon wafer test are monitored using OES, we can conjecture the endpoint by experienced method, but considering by data, the materials for residual area by being etched open area are needed to consider. In this research, we compare and analysis the OES data for coupon wafer test results for monitoring about the conditions that the areas except the patterns on the coupon wafers for real-time process monitoring. In this research, we compared two cases, first one is etching the coupon wafers attached on the carrier wafer that is covered by the photoresist, and other case is etching the coupon wafers on the chuck. For comparing the emission intensity, we chose the four chemical species (SiF2, N2, CO, CN), and for comparing the etched profile, measured by scanning electron microscope (SEM). In addition, we adopted the Dynamic Time Warping (DTW) algorithm for analyzing the chose OES data patterns, and analysis the covariance and coefficient for statistical method. After the result, coupon wafers are over-etched for without carrier wafer groups, while with carrier wafer groups are under-etched. And the CN emission intensity has significant difference compare with OES raw data. Based on these results, it necessary to reasonable analysis of the OES data to adopt the pre-data processing and algorithms, and the result will influence the reliability for relation of coupon wafer test and whole wafer test.