• 제목/요약/키워드: Dynamic Junctions

검색결과 27건 처리시간 0.023초

Negative Dynamic Resistance and RF Amplification in Magnetic Tunnel Junctions

  • Tomita, Hiroyuki;Maehara, Hiroki;Nozaki, Takayuki;Suzuki, Yoshishige
    • Journal of Magnetics
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    • 제16권2호
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    • pp.140-144
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    • 2011
  • We report on a numerical calculation study of two new functional properties in magnetic tunnel junctions (MTJs), negative dynamic resistance and RF amplification. The magnetic dynamics in a conventional CoFeB/MgO/CoFeB MTJ with in-plane magnetization was investigated using a macro-spin model simulation. To examine the influence of thermal fluctuations, random external magnetic fields were also included. Using a voltage controlled bias circuit, the negative dynamic resistance was obtained from time averaged I-V characteristics at both 0 K and 300 K under appropriate external magnetic fields and bias voltages. Using this negative dynamic resistance property, we demonstrated RF amplification with a 100 MHz high frequency signal. Sizable RF amplification gain was observed without thermal fluctuation. However, at 300 K, the RF signal was not amplified because low frequency magnetization dynamics were dominant.

표준본드선도: 본드선도에 의한 동적시스템의 일반모델 (Bond Gragh Prototypes: A General Model for Dynamic Systems in Terms of Bond Graphs)

  • 박전수;김종식
    • 대한기계학회논문집A
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    • 제21권9호
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    • pp.1414-1421
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    • 1997
  • This paper examines the physics and mechanics governing the dynamic interaction between physical systems and suggests the four structures of bond graph prototypes, considered as a general model that can promise their dynamic behavior physically resonable. The bond graph prototypes originating from the paper are more realistic junction structures than those used to model dynamic systems conventionally by bond graph standards in whether physical constraints are involved or not when the energy exchange between two dynamic components arises. It is shown that the bond graph prototypes are dynamic or energetic in their describing equations compared to the bond graph standards, and connectivity and causality are properties of dynamic systems upon which the steps developed in this paper for the bond graph prototypes are wholly based and their definitions an concepts are highly emphasized all through the paper.

직선 조합의 에너지 전파를 이용한 고속 물체인식 (Fast Object Recognition using Local Energy Propagation from Combination of Saline Line Groups)

  • 강동중
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 2000년도 제15차 학술회의논문집
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    • pp.311-311
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    • 2000
  • We propose a DP-based formulation for matching line patterns by defining a robust and stable geometric representation that is based on the conceptual organizations. Usually, the endpoint proximity and collinearity of image lines, as two main conceptual organization groups, are useful cues to match the model shape in the scene. As the endpoint proximity, we detect junctions from image lines. We then search for junction groups by using geometric constraint between the junctions. A junction chain similar to the model chain is searched in the scene, based on a local comparison. A Dynamic Programming-based search algorithm reduces the time complexity for the search of the model chain in the scene. Our system can find a reasonable matching, although there exist severely distorted objects in the scene. We demonstrate the feasibility of the DP-based matching method using both synthetic and real images.

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Bidirectional Transient Voltage Suppression Diodes for the Protection of High Speed Data Line from Electrostatic Discharge Shocks

  • Bouangeune, Daoheung;Choi, Sang-Sig;Choi, Chel-Jong;Cho, Deok-Ho;Shim, Kyu-Hwan
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제14권1호
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    • pp.1-7
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    • 2014
  • A bidirectional transient voltage suppression (TVS) diode consisting of specially designed $p^--n^{{+}+}-p^-$ multi-junctions was developed using low temperature (LT) epitaxy and fabrication processes. Its electrostatic discharge (ESD) performance was investigated using I-V, C-V, and various ESD tests including the human body model (HBM), machine model (MM) and IEC 61000-4-2 (IEC) analysis. The symmetrical structure with very sharp and uniform bidirectional multi-junctions yields good symmetrical I-V behavior over a wide range of operating temperature of 300 K-450 K and low capacitance as 6.9 pF at 1 MHz. In addition, a very thin and heavily doped $n^{{+}+}$ layer enabled I-V curves steep rise after breakdown without snapback phenomenon, then resulted in small dynamic resistance as $0.2{\Omega}$, and leakage current completely suppressed down to pA. Manufactured bidirectional TVS diodes were capable of withstanding ${\pm}4.0$ kV of MM and ${\pm}14$ kV of IEC, and exceeding ${\pm}8$ kV of HBM, while maintaining reliable I-V characteristics. Such an excellent ESD performance of low capacitance and dynamic resistance is attributed to the abruptness and very unique profiles designed very precisely in $p^--n^{{+}+}-p^-$ multi-junctions.

Implementation of Electrochemical Methods for Metrology and Analysis of Nano Electronic Structures of Deep Trench DRAM

  • Zeru, Tadios Tesfu;Schroth, Stephan;Kuecher, Peter
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제12권2호
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    • pp.219-229
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    • 2012
  • In the course of feasibility study the necessity of implementing electrochemical methods as an inline metrology technique to characterize semiconductor nano structures for a Deep Trench Dynamic Random Access Memory (DT-DRAM) (e.g. ultra shallow junctions USJ) was discussed. Hereby, the state of the art semiconductor technology on the advantages and disadvantages of the most recently used analytical techniques for characterization of nano electronic devices are mentioned. Various electrochemical methods, their measure relationship and correlations to physical quantities are explained. The most important issue of this paper is to prove the novel usefulness of the electrochemical micro cell in the semiconductor industry.

사람태아 성장기 모낭에서 결합조직-상피 경계부의 미세구조에 관한 연구 (Ultrastructural Study on Connective Tissue-Epithelial Junctions in Anagen Hair Follicle of Human Fetus)

  • 김백윤;박민아;남광일
    • Applied Microscopy
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    • 제27권3호
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    • pp.321-332
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    • 1997
  • The dermal papilla is known to playa major role in influencing the form and dynamics of the hair follicle, which probably involves regulatory substances crossing the basal lamina. But little is known about the junctions between the dermal papilla and the surrounding epithelial cells of the hair bulb, or between the connective tissue and the epithelial cells on the outside of the hair follicle. This study was performed to identify the ultrastructural differences between dermoepidermal junction of the skin and connective tissue-epithelial junctions on the outside of the hair follicle and around the dermal papilla of normal anagen hair follicles in the human fetal scalp skin. Electron microscopic findings of dermoepidermal junction in scalp skin showed that basal lamina was very irregular and undulated, and it contained many attachment plaques of hemidesmosomes with sub-basal dense plates, tonofilaments, and anchoring filaments. Also invaginations of plasma membrane of basal keratinocytes were seen. There were clear differences both on the outside of the follicle and around the dermal papilla as compared with similar junction in the skin. In particular, neither hemidesmosomes nor tonofilaments, as seen in dermoepidermal junction, were observed in the dermal papilla. Also attachment plaque, sub-basal dense plate and anchoring filaments were not observed at the junction on the outside of the follicle and the dermal papilla. There were some differences between connective tissue-epithelial junctions on the outside of the hair follicle and around the dermal papilla, ie, smoothness of basal lamina and orthogonal arrangement of collagen fibers were seen in the outside of hair follicle, but not in the dermal papilla. These results indicate that the mechanical connection between the hair follicle and the connective tissue component is much weaker than that between the corresponding components in skin, and it reflects the dynamic processes during the anagen phase of the hair follicle compared to the relatively permanent state of the epidermis.

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마이크로파가 조셉슨 접합에서 유발하는 부의 미분저항 (Microwave-Induced Negative-Differential Resistance Observed in Josephson Junction)

  • 김규태;;홍현권
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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    • pp.237-237
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    • 1999
  • We have observed that a stable and reproducible Negative Differential Resistance(NDR) is induced by external microwave at low power in Nb/AlO$_x$/Al/Alo$_x$/Nb junctions. To study the erratic and pozzling NDR observations we have simulated Stewart-McCumber model in the region. Experimental results and simulation results will be presented with a discussion to draw a dynamic interpreration of the NDR.

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Left handed Z-DNA helices and B-Z junctions

  • 나도선
    • 미생물과산업
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    • 제12권1호
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    • pp.4-8
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    • 1986
  • DNA is a flexible molecule that adopts a variety of conformations. Left-handed helices have been demonstrated in synthetic DNA polymers (reviewed in Ref.1-2) and in segments of DNA restriction fragments (3) and recombinant plasmids (4-8). Other DNA conformations such as cruci forms and bent structures have also been demonstrated. Thus DNA micro heterogeneity has been demonstrated in a variety of systems (9-11). The role of the static and dynamic structures and properties of DNA in gene expression has been reviewed(1,12).

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가속차로의 길이 제어와 고속도로 접속부 혼잡저감 효과 (Longitudinal Control of Acceleration Lanes and its Impact on Congestion Alleviation)

  • 신치현;김규옥
    • 대한교통학회지
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    • 제23권5호
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    • pp.169-176
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    • 2005
  • 고속도로 합류부의 반복정체는 모든 이의 일상이지만 정체가 발생한 이후에 마땅히 시도할 대책이 없는 것이 작금의 현실이다. 본 연구는 접속부에 혼잡이 발생한 후 상황에 따라 가속차로 길이를 동적으로 제어하여 본선에 대한 상대적인 우월성을 억제함으로써 혼잡구간의 정체를 저감시키는 기법을 제안하고 있다. 가속차로의 동적 제어가 미치는 교통영향 분석을 위해서 car-following 이론에 토대를 둔 미시 모형인 CORSIM을 사용하였으며, 본선의 수요는 LOS D/E로 유지하는 가운데 연결로 수요를 변화시킴으로서 접속부의 혼잡을 점진적으로 연출하고 본선과 가속차로의 운영속도가 역전되는 시점에 가속차로의 유효길이를 축소하는 기능을 구현하였다. 동적 제어의 대상이 되는 가속차로 길이는 세 가지로 제한하였으며 평가척도는 통행시간과 통과교통량으로 하였다. 또 경부고속도로에 신갈 JC서의 유사 운영 결과와 비교를 통해 모의실험 결과를 뒷받침하였다.

온도변화에 따른 백금 실리사이드-엔 실리콘 접합의 전자 터널링 특성 (Electron Tunneling Characteristics of PtSi-nSi Junctions according to Temperature Variations)

  • 장창덕;이정석;이광우;이용재
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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    • pp.87-91
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    • 1998
  • In this paper, We analyzed the current-voltage characteristics with n-type silicon substrates concentration and temperature variations (Room temperature, 50$^{\circ}C$, 75$^{\circ}C$) in platinum silicide and silicon junction. The electrical parameters of measurement are turn-on voltage, saturation current, ideality factor, barrier height, dynamic resistance in forward bias and reverse breakdown voltage according to variations of junction concentration of substrates and measurement temperature variations. As a result, the forward turn-on voltage, reverse breakdown voltage, barrier height and dynamic resistance were decreased but saturation currents and ideality factor were increased by substrates increased concentration variations in platinum silicide and n-silicon junction. In increased measurement temperature (RT, 50$^{\circ}C$, 75$^{\circ}C$), the extracted electrical parameter values of characteristics were rises by increased temperature variations according to the forward and reverse bias.

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