• Journal of Magnetics
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• v.16 no.2
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• pp.140-144
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• 2011

We report on a numerical calculation study of two new functional properties in magnetic tunnel junctions (MTJs), negative dynamic resistance and RF amplification. The magnetic dynamics in a conventional CoFeB/MgO/CoFeB MTJ with in-plane magnetization was investigated using a macro-spin model simulation. To examine the influence of thermal fluctuations, random external magnetic fields were also included. Using a voltage controlled bias circuit, the negative dynamic resistance was obtained from time averaged I-V characteristics at both 0 K and 300 K under appropriate external magnetic fields and bias voltages. Using this negative dynamic resistance property, we demonstrated RF amplification with a 100 MHz high frequency signal. Sizable RF amplification gain was observed without thermal fluctuation. However, at 300 K, the RF signal was not amplified because low frequency magnetization dynamics were dominant.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.21 no.9
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• pp.1414-1421
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• 1997

This paper examines the physics and mechanics governing the dynamic interaction between physical systems and suggests the four structures of bond graph prototypes, considered as a general model that can promise their dynamic behavior physically resonable. The bond graph prototypes originating from the paper are more realistic junction structures than those used to model dynamic systems conventionally by bond graph standards in whether physical constraints are involved or not when the energy exchange between two dynamic components arises. It is shown that the bond graph prototypes are dynamic or energetic in their describing equations compared to the bond graph standards, and connectivity and causality are properties of dynamic systems upon which the steps developed in this paper for the bond graph prototypes are wholly based and their definitions an concepts are highly emphasized all through the paper.

• 제어로봇시스템학회:학술대회논문집
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• 2000.10a
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• pp.311-311
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• 2000

We propose a DP-based formulation for matching line patterns by defining a robust and stable geometric representation that is based on the conceptual organizations. Usually, the endpoint proximity and collinearity of image lines, as two main conceptual organization groups, are useful cues to match the model shape in the scene. As the endpoint proximity, we detect junctions from image lines. We then search for junction groups by using geometric constraint between the junctions. A junction chain similar to the model chain is searched in the scene, based on a local comparison. A Dynamic Programming-based search algorithm reduces the time complexity for the search of the model chain in the scene. Our system can find a reasonable matching, although there exist severely distorted objects in the scene. We demonstrate the feasibility of the DP-based matching method using both synthetic and real images.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.1-7
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• 2014

A bidirectional transient voltage suppression (TVS) diode consisting of specially designed $p^--n^{{+}+}-p^-$ multi-junctions was developed using low temperature (LT) epitaxy and fabrication processes. Its electrostatic discharge (ESD) performance was investigated using I-V, C-V, and various ESD tests including the human body model (HBM), machine model (MM) and IEC 61000-4-2 (IEC) analysis. The symmetrical structure with very sharp and uniform bidirectional multi-junctions yields good symmetrical I-V behavior over a wide range of operating temperature of 300 K-450 K and low capacitance as 6.9 pF at 1 MHz. In addition, a very thin and heavily doped $n^{{+}+}$ layer enabled I-V curves steep rise after breakdown without snapback phenomenon, then resulted in small dynamic resistance as $0.2{\Omega}$, and leakage current completely suppressed down to pA. Manufactured bidirectional TVS diodes were capable of withstanding ${\pm}4.0$ kV of MM and ${\pm}14$ kV of IEC, and exceeding ${\pm}8$ kV of HBM, while maintaining reliable I-V characteristics. Such an excellent ESD performance of low capacitance and dynamic resistance is attributed to the abruptness and very unique profiles designed very precisely in $p^--n^{{+}+}-p^-$ multi-junctions.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.2
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• pp.219-229
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• 2012

In the course of feasibility study the necessity of implementing electrochemical methods as an inline metrology technique to characterize semiconductor nano structures for a Deep Trench Dynamic Random Access Memory (DT-DRAM) (e.g. ultra shallow junctions USJ) was discussed. Hereby, the state of the art semiconductor technology on the advantages and disadvantages of the most recently used analytical techniques for characterization of nano electronic devices are mentioned. Various electrochemical methods, their measure relationship and correlations to physical quantities are explained. The most important issue of this paper is to prove the novel usefulness of the electrochemical micro cell in the semiconductor industry.

• Applied Microscopy
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• v.27 no.3
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• pp.321-332
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• 1997

The dermal papilla is known to playa major role in influencing the form and dynamics of the hair follicle, which probably involves regulatory substances crossing the basal lamina. But little is known about the junctions between the dermal papilla and the surrounding epithelial cells of the hair bulb, or between the connective tissue and the epithelial cells on the outside of the hair follicle. This study was performed to identify the ultrastructural differences between dermoepidermal junction of the skin and connective tissue-epithelial junctions on the outside of the hair follicle and around the dermal papilla of normal anagen hair follicles in the human fetal scalp skin. Electron microscopic findings of dermoepidermal junction in scalp skin showed that basal lamina was very irregular and undulated, and it contained many attachment plaques of hemidesmosomes with sub-basal dense plates, tonofilaments, and anchoring filaments. Also invaginations of plasma membrane of basal keratinocytes were seen. There were clear differences both on the outside of the follicle and around the dermal papilla as compared with similar junction in the skin. In particular, neither hemidesmosomes nor tonofilaments, as seen in dermoepidermal junction, were observed in the dermal papilla. Also attachment plaque, sub-basal dense plate and anchoring filaments were not observed at the junction on the outside of the follicle and the dermal papilla. There were some differences between connective tissue-epithelial junctions on the outside of the hair follicle and around the dermal papilla, ie, smoothness of basal lamina and orthogonal arrangement of collagen fibers were seen in the outside of hair follicle, but not in the dermal papilla. These results indicate that the mechanical connection between the hair follicle and the connective tissue component is much weaker than that between the corresponding components in skin, and it reflects the dynamic processes during the anagen phase of the hair follicle compared to the relatively permanent state of the epidermis.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.237-237
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• 1999

We have observed that a stable and reproducible Negative Differential Resistance(NDR) is induced by external microwave at low power in Nb/AlO$_x$/Al/Alo$_x$/Nb junctions. To study the erratic and pozzling NDR observations we have simulated Stewart-McCumber model in the region. Experimental results and simulation results will be presented with a discussion to draw a dynamic interpreration of the NDR.

• The Microorganisms and Industry
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• v.12 no.1
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• pp.4-8
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• 1986

DNA is a flexible molecule that adopts a variety of conformations. Left-handed helices have been demonstrated in synthetic DNA polymers (reviewed in Ref.1-2) and in segments of DNA restriction fragments (3) and recombinant plasmids (4-8). Other DNA conformations such as cruci forms and bent structures have also been demonstrated. Thus DNA micro heterogeneity has been demonstrated in a variety of systems (9-11). The role of the static and dynamic structures and properties of DNA in gene expression has been reviewed(1,12).

• Journal of Korean Society of Transportation
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• v.23 no.5 s.83
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• pp.169-176
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• 2005

This paper introduces the dynamic control of acceleration lanes at freeway-ramp junctions. The feasibility of operation with flexible length of acceleration lane was tested with most possible traffic conditions. The operational qualify was also evaluated using average speed and total thru-put at both ramp section and freeway section. A CORSIM microscopic simulation model was used to evaluate the operation quality with a variety or volume conditions and three acceleration lanes, each representing different length categories. In addition, tollgate O-D data including travel times were obtained for two sections on the Gyeong-bu Freeway where an effective merging distance has been largely reduced. Its effect was analyzed and compared to the simulation results. Finally, the effects of acceleration lane are discussed and operational improvement at junctions is presented as research findings.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.87-91
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• 1998

In this paper, We analyzed the current-voltage characteristics with n-type silicon substrates concentration and temperature variations (Room temperature, 50$^{\circ}C$, 75$^{\circ}C$) in platinum silicide and silicon junction. The electrical parameters of measurement are turn-on voltage, saturation current, ideality factor, barrier height, dynamic resistance in forward bias and reverse breakdown voltage according to variations of junction concentration of substrates and measurement temperature variations. As a result, the forward turn-on voltage, reverse breakdown voltage, barrier height and dynamic resistance were decreased but saturation currents and ideality factor were increased by substrates increased concentration variations in platinum silicide and n-silicon junction. In increased measurement temperature (RT, 50$^{\circ}C$, 75$^{\circ}C$), the extracted electrical parameter values of characteristics were rises by increased temperature variations according to the forward and reverse bias.