• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2009.10a
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• pp.445-448
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• 2009

The present work deals with microstructure and tensile deformation of nanostructured dual-phase steel consisting of ferrite and martensite phases. Prior to deformation, a fully martensite phase is prepared and then processed by equal channel angular pressing (ECAP) and subsequent annealing. Room-temperature tensile properties are examined and compared to those of dual-phase steels with coarse grains. Due to the combined effects coming from the grain refinement of both phases and their uniform distributions, the nanostructured dual-phase steel exhibits better strength and ductility than coarse grained counterpart, achieving ${\sim}1\;GPa$ and ${\sim}20%$ for tensile strength and elongation, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.194-197
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• 2002

Applying dual layer insulator on plastic substrates improved electrical characteristics of organic thin film transistor(TFT). A high-quality silicon dioxide(SiO$_2$) suitable for a insulator was deposited on plastic substrates by e-beam evaporation at 110$^{\circ}C$. The insulator film which was treated by N$_2$ annealing at 150$^{\circ}C$ showed excellent I-V, C-V characteristics. The dual layer insulator structure of polyimide-SiO$_2$ improved the roughness of SiO$_2$ surface and showed very low leakage current. In addition, the flat band voltage has been reduced from -2.5V to about 0.5V.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.5
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• pp.251-261
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• 2011

The changes in microstructure and texture during annealing were examined in a series of 0.015% C-1.5% Mn cold-rolled sheet steels with 0~0.5% Mo. Orientation distribution function data were calculated from the (110), (200), (211) pole figures determined on the rolled plane of cold-rolled and annealed steel sheets. Regardless of Mo content and annealing conditions, martensite volume fraction was less than 1.0%, not affecting the texture evolution. Textural change at the cooling stage after heating at $820^{\circ}C$ for 67 sec was not observed. Increasing the Mo content and annealing temperature markedly strengthened the intensities of ${\gamma}$-fiber texture, resulting in the increase in $r_m$ value. The desirable texture evolution for deep drawability in the 0.5% Mo steel may be mainly caused by the grain refining effect of Mo carbide in the hot-rolled steel sheet.

• Proceedings of the Korean Magnestics Society Conference
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• 2001.10a
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• pp.74-74
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• 2001

No Abstract, See Full-text

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.172-172
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• 2016

Dual-beam experiments (Focused ion beam - Orientation mapping microstructure, FIB-OIM) is a widely used experimental tool because this experiments tool available alternates between automated serial sectioning and EBSD with the help of dual beams. We investigated the reconstruction procedure for analysis tool which three-dimensional internal microstructure using Ni superalloy(IN100) and ZrO2. As a results, we observed annealing twin boundary each layer in Ni superalloy(IN100) and fairly isotropic internal microstructure in ZrO2 using marching cubes algorithm. According to these results, this procedure is reconstructed well and we gained ability to arrange the EBSD map and internal microstructure.

• Journal of the Korean Society of Safety
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• v.18 no.3
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• pp.60-63
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• 2003

For the increase the charge stability of teflon electrets for used at uncomfortable industrial circumstances with high temperature or humidity, We made an investigation into double layer effect of teflon electrets. Teflon AF film was spincoated on FEP film and then the charge storage property of AF/FEP dual film was investigated to be compared with FEP film. It was found that the AF/FEP dual film has higher surface potential than FEP film on the repeated charging and annealing process. It seems that AF/FEP dual film has higher thermal stability than FEP film through TSC measurement. If the investigations of the double layer effect of Teflon film carried out more closely with it's molecular structures and surface conditions, it may be effectively improved the stability of charge storage.

• Journal of the Korean Society for Heat Treatment
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• v.10 no.2
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• pp.128-137
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• 1997

The formation processes of the retained austenite(${\gamma}_R$) in SHCP100 steel sheets were investigated in order to improve the transformation induced plasticity(TRIP) effect of ${\gamma}_R$. An excellent combination of elongation about 23% and high strength over 830 MPa was achieved by processing of intercritical annealing and isothermal holding. The mechanical properties of TRIP-aided dual phase steel was found to depend on the volume ratio of each phase and the volume fraction of ${\gamma}_R$. It was also noted that the proper mechanical stability of ${\gamma}_R$ improved the mechanical properties. In this work, the best balance of strength-ductility was obtained by holding the steel at $420^{\circ}C$ for 500sec. after annealing at $730^{\circ}C$ for 300 sec.

• Journal of Powder Materials
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• v.27 no.1
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• pp.1-7
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• 2020

In this research, a new medium-entropy alloy with an equiatomic composition of FeCuNi was designed using a phase diagram (CALPHAD) technique. The FeCuNi MEA was produced from pure iron, copper, and nickel powders through mechanical alloying. The alloy powders were consolidated via a high-pressure torsion process to obtain a rigid bulk specimen. Subsequently, annealing treatment at different conditions was conducted on the four turn HPT-processed specimen. The microstructural analysis indicates that an ultrafine-grained microstructure is achieved after post-HPT annealing, and microstructural evolutions at various stages of processing were consistent with the thermodynamic calculations. The results indicate that the post-HPT-annealed microstructure consists of a dual-phase structure with two FCC phases: one rich in Cu and the other rich in Fe and Ni. The kernel average misorientation value decreases with the increase in the annealing time and temperature, indicating the recovery of HPT-induced dislocations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.30-33
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• 2004

Shallow p+-n junctions were formed by low-energy ion implantation and dual-step annealing processes The dopant implantation was performed into the crystalline substrates using $BF_2$ ions. The annealing was performed with a rapid thermal processor and a furnace. FA+RTA annealing sequence exhibited better junction characteristics than RTA+FA thermal cycle from the viewpoint of junction depth. A new simulator is designed to model boron diffusion in silicon, which is especially useful for analyzing the annealing process subsequent to ion implantation. The model which is used in this simulator takes into account nonequilibrium diffusion, reactions of point defects, and defect-dopant pairs considering their charge states, and the dopant inactivation by introducing a boron clustering reaction. Using a resonable parameter values, the simulator covers not only the equilibrium diffusion conditions but also the nonequilibrium post-implantation diffusion. Using initial conditions and boundary conditions, coupled diffusion equation is solved successfully. The simulator reproduced experimental data successfully.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.115-117
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• 2005

In this paper, we formed the shallow junction by preamorphization and low energy ion implantation. And a simulator is designed for predicting the annealing process results. Especially, if considered the applicable to single step annealing process(RTA, FA) and dual step annealing process(RTA+FA, FA+RTA). In this simulation, the ion implantation model and the boron diffusion model are used. The Monte Carlo model is used for the ion implantation. Boron diffusion model is based on pair diffusion at nonequilibrium condition. And we considered that the BI-pairs lead the diffusion and the boron activation and clustering reaction. Using the boundary condition and initial condition, the diffusion equation is solved successfully. The simulator is made ofC language and reappear the experimental data successfully.