• Title/Summary/Keyword: Dual process

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Impact of Plasma Induced Degradation on Low Temperature Poly-Si CMOS TFTs during Etching Process

  • Chang, Jiun-Jye;Chen, Chih-Chiang;Chuang, Ching-Sang;Yeh, Yung-Hui
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.519-522
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    • 2002
  • In this paper, we analyze the impact of plasma etching process induced device degradation on low temperature poly-Si TFTs. The results indicate the relationship between device degradation and PPID effect during plasma fabrication. The dual-gate structure, which is used to suppress leakage current, is also discussed in this research.

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A Dual-Level Knowledge-Based Synthesis System for Semiconductor Chip Encapsulation

  • Yong Jeong, Heo
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2003.12a
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    • pp.154-159
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    • 2003
  • Semiconductor chip encapsulation process is employed to protect the chip and to achieve optimal performance of the chip. Expert decision-making to obtain the appropriate package design or process conditions with high yields and high productivity is quite difficult. In this paper, an expert system for semiconductor chip encapsulation has been constructed which combines a knowledge-based system with CAE software.

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Fuzzy Inference in Medical Diagnosis

  • Kim, Soon-Ki
    • Proceedings of the Korean Institute of Intelligent Systems Conference
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    • 1995.10b
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    • pp.92-97
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    • 1995
  • In medical diagnostic process we are dealing with the preliminary diagnosis based on the interview chart. We will quantify the qualitative information of a patient by dual scaling and establish both prototypes of fuzzy diagnostic sets and the fuzzy linear regressions. Its utility is shown in the diagnosis of headache and CAFDDH.

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Arsenic implantation graph comparing with Dopant diffusion simulation and 1-D doping simulation (performed by synopsys sentaurus process)

  • Im, Ju-Won;Park, Jun-Seong
    • Proceeding of EDISON Challenge
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    • 2016.03a
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    • pp.344-346
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    • 2016
  • 본 논문에서는 3-stream model에 기반한 Dopant diffusion simulator를 사용하여 실리콘 기판 내부의 As이온의 확산을 시뮬레이션한 결과와 Dual-Pearson Analytic model에 기반하여 Ion implantation을 1-D doping simulation한 결과를 토대로 여러 공정 설계에서 diffusion simulator의 사용가능함을 확인하였다.

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Determination of the Optimal Operating Condition of Dual Mixed Refrigerant Cycle of LNG FPSO Topside Liquefaction Process (LNG FPSO Topside의 액화 공정에 대한 이중 혼합 냉매 사이클의 최적 운전 조건 결정)

  • Lee, Joon-Chae;Cha, Ju-Hwan;Roh, Myung-Il;Hwang, Ji-Hyun;Lee, Kyu-Yeul
    • Journal of the Society of Naval Architects of Korea
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    • v.49 no.1
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    • pp.33-44
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    • 2012
  • In this study, the optimal operating conditions for the dual mixed refrigerant(DMR) cycle were determined by considering the power efficiency. The DMR cycle consists of compressors, heat exchangers, seawater coolers, valves, phase separators, tees, and common headers, and the operating conditions include the equipment's flow rate, pressure, temperature, and refrigerant composition per flow. First, a mathematical model of the DMR cycle was formulated in this study by referring to the results of a past study that formulated a mathematical model of the single mixed refrigerant(SMR) cycle, which consists of compressors, heat exchangers, seawater coolers, and valves, and by considering as well the tees, phase separators, and common headers. Finally, in this study, the optimal operating conditions from the formulated mathematical model was obtained using a hybrid optimization method that consists of the genetic algorithm(GA) and sequential quadratic programming(SQP). Moreover, the required power at the obtained conditions was decreased by 1.4% compared with the corresponding value from the past relevant study of Venkatarathnam.