• Journal of the Korean Ceramic Society
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• v.40 no.12
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• pp.1165-1169
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• 2003

The Ta$_2$O$_{5}$ thin film was deposited on Si-(III) and glass substrate with the change of Ar:O$_2$ gas flow rate in the assist ion gun by the Dual ion-Beam Sputtering (DIBS). As the $O_2$ gas flow of the assist ion gun was decreased, the deposition rate of the thin films decreased. The refractive index was fixed (2.11, at 1550 nm) without regarding to $O_2$ gas flow of the range 3∼12 sccm in assist ion gun. The condition of Ar:O$_2$=3:12 was formatted stoichiometry composition of Ta$_2$O$_{5}$ and the ms roughness was small (0.183 nm).

• Journal of the Korean Ceramic Society
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• v.42 no.1
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• pp.28-32
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• 2005

The optical properties and intrinsic stress of $Ta_{2}O_{5}$ thin films deposited by Dual ion-Beam Sputtering: (DIBS) and Single ion-Beam Sputtering (SIBS) were studied as a function of the substrate temperature and assist ion beam voltage. The refractive index showed the maximum value (n = 2.144) at $150^{circ}C$ in the SIBS process. When the substrate temperature has above $150^{circ}C$ in the SIBS process the refractive index decreased. In the DIBS process, the increase of the substrate temperature affected the increase of the refractive index at a maximum value (n = 2.1117, at $200^{circ}C$). The low temperature process $(<100^{circ}C)$ can greatly reduce residual stress with the assist ion gun, but the high temperature process was unaffected. As the assist ion beam voltage increase from 250 to 350 V the refractive index increased to 2.185. However, the refractive index was decreased at the range of 350-650 V, As the assist ion beam voltage increased, the stress of the deposited film decreased to 0.1834 GPa at 650 V.

• Current Optics and Photonics
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• v.5 no.5
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• pp.576-582
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• 2021

Dichroic beam-splitter (DBS) with polarization-maintaining took an important role in the free space quantum telecommunication tests on the Micius satellite of China. In this presentation, we designed and prepared a 50 layer polarization-maintaining DBS coating by a dual ion beam sputtering deposition (Dual-IBS) method. In order to solve a stress problem, an 18 layer special anti-reflection (AR) coating with similar physical thickness ratio was deposited on the backside. By stress compensation, the surface flatness RMS value of the DBS sample decreased from 0.341 λ (@632.8 nm) to 0.103 λ while beam splitting and polarization maintaining properties were almost kept unchanged. Further, we discussed the mechanism of film stress and stress compensation by equation deduction and found that total stress had a strong relationship with the total physical thickness and the ratio of layer materials.

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.16-22
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• 1997

ion beam processing of materials for medical application has gained increasing interest in the last decade and the implantation of nitrogen into TI-6AI-4V to improve corrosive-wear performance is currently used for processing of total hip and knee joints. Oxides and nitrides of Ti, Zr, Al, Cr were deposited on TI-6AI-4V substrates by DC magnetron sputtering dual ion beam sputtering and ion beam assisted deposition. The cytotoxicity of these films were investigated by MTT method and showed comparable to untreated TI-6AI-4V Plasm-sprayed hydroxyapatite(HAp) coatings showed excellent cytotoxicity regardless of heat treatment. intermediate layer coatings of nitrides and oxides increased the bond strength of HAp to substrate by intrdducing chemical bond at interface. Heat treatment of HAp coatings also improved the chemical bond at interfaces and increased the bond strength of untreated TI-6AI-4V to 16.4 kg/$\textrm{cm}^2$ but still lower than 33.1 kg./$\textrm{cm}^2$ of ir oxide as a imtermediate layer caoting.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.147.1-147
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• 2003

• Journal of the Korean Society for Heat Treatment
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• v.21 no.5
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• pp.235-243
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• 2008

Ni-C composite films were prepared using a combination of microwave plasma CVD and ion beam sputtering deposition working in a codeposition way. The structure of these films was characterized by energy-dispersive X-ray diffraction (EDXRD), transmission electron microscopy (TEM) and Raman spectroscopy. It was found that a nickel carbide phase, $Ni_3C$ (hcp), formed as very fine crystallites over a wide temperature range when Ni-C films were deposited at low $CH_4$ flow rates. The thermal stability of this nonequilibrium carbide $Ni_3C$ was also studied. As a result, the $Ni_3C$ carbide was found to decompose into nickel and graphite at around $400^{\circ}C$. With high $CH_4$ flow rates (> 0.2 sccm), the structure of the Ni-C films became amorphous. The formation behavior of the carbide and amorphous Ni-C phases are discussed in relation to the electrical resistivity of the films.

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05a
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• pp.6-6
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• 1992

Ionized cluster beam deposition (ICBD) technique has been employed to fabricate high-purity crystalline polyimide (PI) film. The pyromellitic dianhydride (PMDA) and oxydianiline (ODA) were deposited using dual ICB sources, Fourier trans forminfraredspectroscopy (FT-IR), X-ray photoemission spectroscopy (XPS), and Transmission electron microscopy (TEM)study show that the bulk and surface chemical properties and the crystalline structure are very sensitive to the ICBD conditions such as cluster ion acceleration voltage and ionization voltage, At optimum ICBD conditions, the PI films have a maximum imidization, negligible impurities(∼1% isoimide), and a good crystalline structure probably due to the high surface migration energy and surface cleaning effect. These characteristics are superior to those of films deposited by other techniques such as colvent cast, vapowr deposition, or sputtering techniques.

• Korean Journal of Optics and Photonics
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• v.14 no.3
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• pp.331-337
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• 2003

This paper represents 50 ㎓ narrow band pass filters for fiber optical communication fabricated by dual ion beam sputtering method. We have analyzed the characteristics of the TA$_2$ $O_{5}$ and $SiO_2$ single layers in order to optimize the process conditions for the 50 ㎓ narrow band pass filters, and controlled the film thickness uniformity to less than 0.1 nm deviation by dual peak spike filter pre-deposition. We designed and fabricated 50 ㎓ narrow band pass filters that consist of 216 layers including 4 cavities based on quarter wave optical thickness. Class substrates with high thermal expansion coefficients were used to reduce the film stress. Anti-reflection coating at the rear side of the substrate was also needed to reduce the optical thickness errors of the Optical Monitoring System caused by multiple beam interference between the front side and the rear side of substrate. The optical characteristics of this 50 ㎓ narrow band pass filters are insertion loss of 0.40 ㏈, pass band ripple of 0.20 ㏈, and pass bandwidth at -0.5 ㏈ of 0.20 nm. and isolation bandwidth at -25 ㏈ of 0.6 nm, which satisfy specifications of dense WDM system in fiber optical communications.tions.

• Korean Journal of Materials Research
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• v.26 no.6
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• pp.293-297
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• 2016

Ni-C composite films were prepared by co-deposition using a combined technique of plasma CVD and ion beam sputtering deposition. Depending on the deposition conditions, Ni-C thin films manifested three kinds of microstructure: (1) nanocrystallites of non-equilibrium carbide of nickel, (2) amorphous Ni-C film, and (3) granular Ni-C film. The electrical resistivity was also found to vary from about $10^2{\mu}{\Omega}cm$ for the carbide films to about $10^4{\mu}{\Omega}cm$ for the amorphous Ni-C films. The Ni-C films deposited at ambient temperatures showed very low TCR values compared with that of metallic nickel film, and all the films showed ohmic characterization, even those in the amorphous state with very high resistivity. The TCR value decreased slightly with increasing of the flow rate of $CH_4$. For the films deposited at $200^{\circ}C$, TCR decreased with increasing $CH_4$ flow rate; especially, it changed sign from positive to negative at a $CH_4$ flow rate of 0.35 sccm. By increasing the $CH_4$ flow rate, the amorphous component in the film increased; thus, the portion of $Ni_3C$ grains separated from each other became larger, and the contribution to electrical conductivity due to thermally activated tunneling became dominant. This also accounts for the sign change of TCR when the filme was deposited at higher flow rate of $CH_4$. The microstructures of the Ni-C films deposited in these ways range from amorphous Ni-C alloy to granular structures with $Ni_3C$ nanocrystallites. These films are characterized by high resistivity and low TCR values; the electrical properties can be adjusted over a wide range by controlling the microstructures and compositions of the films.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.04a
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• pp.466-471
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• 2004

In focused-ion-beam (FIB) application of micromachining and device transplantation, four kinds of FIB processes, namely FIB sputtering, FIB-induced etching, redeposition, and FIB-induced deposition, are well utilized. As with FIB systems, scanning electron microscopes(SEMs) were extensively used in the semiconductor industry. They are the tools of choice for defect review and providing the image resolution needed for process monitoring. The enhanced capabilities of a dual-column on one chamber system are quickly becoming realized by the nano industry for performing a wide range of application.