• Journal of Sensor Science and Technology
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• v.23 no.5
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• pp.291-294
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• 2014

In this study, a chemiresistive sensor based on one-dimensional $WO_3$ nanostructures is presented for application in non-invasive medical diagnostics. $WO_3$ nanostructures were used as an active gas sensing layer and were deposited onto a $SiO_2/Si$substrate using Pt interdigitated electrodes (IDEs). The IDE spacing was $5{\mu}m$ and deposition was performed using RF sputter with glancing angle deposition mode. Pt IDEs fabricated by photolithography and dry etching. In comparison with thin film sensor, sensing performance of nanostructure sensor showed an enhanced response of more than 20 times when exposed to 50 ppm acetone at $400^{\circ}C$. Such a remarkable faster response can pave the way for a new generation of exhaled breath analyzers based on chemiresistive sensors which are less expensive, more reliable, and less complicated to be manufactured. Moreover, presented sensor technology has the potential of being used as a personalized medical diagnostics tool in the near future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.174-174
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• 2010

In this article, the dry etching mechanism of ZnO thin films in $N_2/Cl_2$/Ar gas chemistry was investigated. The ZnO thin films were deposited on Si substrate using Atomic layer deposition. The etching experiments were performed by inductively coupled plasma system. The maximum etch rate was104.5 nm/min and the highest selectivity of ZnO over $SiO_2$ was 3.3. Etching rate was measured by surface profiler. And the chemical reaction on the surface of the etched ZnO thin films was investigated by x-ray photo electrons pectroscopy. As a result of XPS, $Zn2p_{3/2}$ peak shifted toward a higher binding energy and the O-O and N-O bond were obtained from the sample of ZnO thin film which after plasma treatment.

• Proceedings of the Korea Water Resources Association Conference
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• 2015.05a
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• pp.211-211
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• 2015

Mekong River is the world's $10^{th}$ longest river and runs through China's Yunnan province, Burma, Thailand, Laos, Cambodia and Vietnam. And Tonle Sap Lake, the largest fresh water body in Southeast Asia and the heart of Mekong River system, covers an area $2,500-3,000Km^2$ in dry season and $10,000-16,000Km^2$ in wet season. As previously noted, the water within Sap river flows from the Mekong River to Tonle Sap Lake in flood season (between June and October) and backward to Mekong River in dry season. Recently the flow regime of Sap River might be significantly affected by the development of large dams in upstream region of Mekong River. This paper aims at basic study about the large scale flood inundation of Cambodia using by CAESAR-Lisflood. CAESAR-Lisflood is a geomorphologic / Landscape evolution model that combines the Lisflood-FP 2d hydrodynamic flow model (Bates et al, 2010) with the CAESAR geomorphic model to simulate flow hydrograph and erosion/deposition in river catchments and reaches over time scales from hours to 1000's of years. This model is based on the simplified full Saint-Venant Equation so that it can simulate the interacted flow of between Mekong River and Tonle Sap Lake especially focusing on the flow direction change of Sap River by season.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.27-27
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• 1998

진공기술의 응용과 진공환경의 이용은 더 이상 논하지 않더라도 산업 전반에 그 충요성이 점점 더 커가고 있다. 이러한 여건에도 불구하고 진공율 이용하는 system 개밟의 국산화는 수 입하는 system으$\mid$ 수에 비하여 절대적으로 부족하며, 또한 개발하는 system의 자동화는 거의 이 루어지지 않고 있으며, 자동화된 진공판련 system은 거의 대부분 수입에 의흔하고 있다. 실험 실 규모에서부터 System올 하나하나 개밭하고, 이톨 자동화하는 노력과 일이 진행됨다면 산업 응용에 있어서도 자연스럽게 자동화된 system으$\mid$ 개발이 이루어 질 것이다 .. system 자동화는 상 품수명의 단축과 이에 따른 다품종 소량을 요구하는 시장수요에 대응하고, 인력절감과 고풀짙 화로 생산성 향상의 요구에 대응하기 위하여 필요하다. 본 연 구에 서 는 e-beam evaporator로 evaporation하면 서 ion beam으로 assist하여 thin film율 제 작하는 IBAD vacuum system율 싫 계 및 제 작하고[1,2], PLC[3,떼톨 이 용하여 system 자동화톨 하였다 .. thin film 제작 process는 먼저 기본 진공상태로 만뚫고 난 뒤, e-beam evaporator로 e evaporation하면서 ion beam source로 assist하여 substrate 011 thin film율 제조한다 226;. thin film올 제 조하면서 thickness monitor로 sample의 thickness rate톨 control 하고, sample의 균얼성과 밀착 성을 고려하여 substrate톨 rotation 및 heating 할 수 있도록 싫계, 제작하였다. 양질의 박막올 제조하기 위해서 진공환경이 좋은 상태로 제공되어야 한다. 이톨 위하여 oil free operation 0 I 가 능한 dry pump와 turbo molecular pump로 고진공 배기 하였다. 진공도의 흑점은 thermal effect 툴 고려하여 cold cathode ion gauge률 사용하였고, intro chamber와 main chamber 사이에는 g gate valve톨 설치하여 벌도로 운용되도록 하였다. 이러한 process를 박막의 두께, 진공도, 시 간, 온도, 공정 동의 조건올 기훈으로 자동화한 것이다. 또한 정전과 단수에 대한 interlock 기능 도 고려하였다.하였다.

• Journal of the Korean Society for Precision Engineering
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• v.24 no.9
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• pp.103-109
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• 2007

LCD (Liquid Crystal Display) is widely used electronic product. It needs too many processes such as PECVD (Plasma Enhanced Vapor Deposition), Sputtering, Photo-lithography, Dry etch. Each process is important but inspection process is more important because most companies emphasis on the six sigma. Recently, LCD inspection system is composed with inlet, inspector, outlet air pads. LCD is inspected on air pad which is shooting air from air hole. This paper studies on pad design of air bearing for LCD inspection to minimize LCD fluctuation. This design is able to reduce fluctuation and then satisfies CCD inspectional range. Also inspection pad needs to adequate stable area.

• Journal of Electrochemical Science and Technology
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• v.3 no.4
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• pp.178-184
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• 2012

A porous nickel (P-Ni) substrate was prepared by selective leaching of zinc from pressed pellets containing powders of Ni & Zn in 4 M NaOH solution. Anodic deposition of manganese oxide onto the porous Ni substrate ($MnO_x$/P-Ni) formed nano-flakes of manganese oxide layers as revealed in SEM studies. Pseudocapacitance of this oxide electrode was evaluated by cyclic voltammetry (CV) and chronopotentiometry (CHP) in 2 M NaOH solution. The specific capacitance of the Mn oxide electrode was as high as 1515 F $g^{-1}$, which was ten times higher than Mn oxide deposited on a flat Ni-ribbon. 80% of capacity was retained after 200 charge/discharge cycles. The system showed no loss of activity in dry form over period of days. The impedance studies indicated highly conducting $MnO_x$/P-Ni substance and the obtained specific capacitance from impedance data showed good agreement with the charge/discharge measurements.

• Journal of Environmental Science International
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• v.19 no.3
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• pp.269-279
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• 2010

The relative contributions of physical and chemical processes to the production of ozone ($O_3$) were evaluated based on an integrated process rate (IPR) analysis using the MM5/CMAQ in a downtown (i.e., Yangsan_U) and suburban area (i.e., Ungsang) on high ozone days during spring and summer in 2006 (28 April and 8 August 2006). The IPR includes a horizontal advection (HADV) and diffusion (HDIF), a vertical advection (ZADV) and diffusion (VDlF), a dry deposition (DDEP), and a chemistry (CHEM). The VDIF in Yangsan_U was found to be the most dominant contributor (29.5% in spring and 32.1% in summer) to high $O_3$ concentrations, followed by the HADV and ZADV. In contrast, the contributions of the HADV (40.3% in spring and 32.3% in summer) in Ungsang were significantly higher than those of VDIF and ZADV. Moreover, $O_3$ production due to the chemical effect in the two areas (especially in Ungsang) during summer was found to be moderately higher than that during spring.

• Journal of the Semiconductor & Display Technology
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• v.23 no.1
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• pp.92-96
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• 2024

The application of the technology for forming Al₂O₃ thin films using ALD(atomic layer deposition) method is rapidly increasing in the semiconductor and display fields. In order to increase the efficiency of the ALD process in a mass production line, metallic by-products generated from the ALD process chamber must be effectively collected. By collecting by-products flowing out of the chamber with a cold trap device before they go to the vacuum pump, damage to the vacuum pump can be prevented and the work room can be maintained stably, resulting in increased process flow rate. In this study, a cold trap was installed between the ALD process chamber and the dry pump to measure and analyze by-products generated during the Al₂O₃ thin film deposition process. As a result, it was confirmed that Al and O elements were discharged, and the collection forms were two types: bulk and powder. And the binding energy peaked at 73.7 ~ 74.3 eV, the binding energy of Al 2p, and 530.7 eV, the binding energy of O 1s, indicating that the binding structure was Al-O.

• Fashion & Textile Research Journal
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• v.20 no.3
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• pp.353-359
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• 2018

In this study, fused deposition modellig(FDM) 3D printing technology has been applied directly to polyester voil fabric to produce 3D printed lace/voil composite fabrics. A stereolithograpy(STL) file with a lace type 3D modelling under the various thickness were prepared and transformed into a g-code file using a g-code generator. The extrusion conditions for FDM 3D printing were controlled by 50mm/s of nozzle speed, $235^{\circ}C$ of nozzle temperature, $40^{\circ}C$ of heating bed temperature. 3D printed lace/voil composite fabriscs manufactured by 3D printing based on FDM using a thermoplactic polyurethane(TPU) filaments were obtained. To evaluate the mechanical properties and washability of the fabricated 3D printed lace/voil composite fabric, KES-FB system test, washing fastness test and dry cleaning resistance test were conducted. As 3D printing thickness increased, KOSHI, NUMERI, and FUKURAMI of 3D printed lace/voil composite fabric increased. From the results of the primary hand value test, 3D printed lace/voil composite fabrics were confirmed to be applicable to women's summer garments. As a result of the washability and dry cleaning resistance test of the 3D printed lace/voil composite fabrics, all samples were graded 4-5.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.79-79
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• 1999

The varous techniques for fabrication of si or metal tip as a field emission electron source have been reported due to great potential capabilities of flat panel display application. In this report, 240nm thermal oxide was initially grown at the p-type (100) (5-25 ohm-cm) 4 inch Si wafer and 310nm Si3N4 thin layer was deposited using low pressure chemical vapor deposition technique(LPCVD). The 2 micron size dot array was photolithographically patterned. The KOH anisotropic etching of the silicon substrate was utilized to provide V-groove formation. After formation of the V-groove shape, dry oxidation at 100$0^{\circ}C$ for 600 minutes was followed. In this procedure, the orientation dependent oxide growth was performed to have a etch-mask for dry etching. The thicknesses of the grown oxides on the (111) surface and on the (100) etch stop surface were found to be ~330nm and ~90nm, respectively. The reactive ion etching by 100 watt, 9 mtorr, 40 sccm Cl2 feed gas using inductively coupled plasma (ICP) system was performed in order to etch ~90nm SiO layer on the bottom of the etch stop and to etch the Si layer on the bottom. The 300 watt RF power was connected to the substrate in order to supply ~(-500)eV. The negative ion energy would enhance the directional anisotropic etching of the Cl2 RIE. After etching, remaining thickness of the oxide on the (111) was measured to be ~130nm by scanning electron microscopy.