• Proceedings of the Korean Geotechical Society Conference
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• 2007.09a
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• pp.373-382
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• 2007

In the vertical drain method, discharge capacity is generally one of the most important factor which affect on the estimation of the drain efficiency. However, adopting the drain considering discharge capacity only is not sufficiently considered method so that systematic criteria for adoption is necessary to choose the most suitable drain. Therefore, this study represents the application method considering behavior of the ground and vertical drain which is coupled together and ground improvement efficiency analyzing various cases of discharge capacity test performed in the recent soft ground improvement projects. According to the analysis, most drains tend to satisfy the required discharge capacity. It presents that deformed shape of the drains and well resistance estimation along the ground settlement, improvement efficiency by water content ratio along the depth and shear strength obtained after ground improvement should be considered altogether with the discharge capacity to select the proper drain. Also, appropriate adoption of drain material considering the ground condition is vital through analyzing the field measured data and comparing the result of the discharge capacity test as various vertical drain materials are being constructed continuously.

• Proceedings of the Korean Geotechical Society Conference
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• 2006.03a
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• pp.1165-1172
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• 2006

In this study, an aspect of settlement, developed from different ground improvement method like suction drain method using vacuum pressure and vertical drain method using overburden pressure, was compared each other. In order to analyze settlement tendency of each method exactly, the finite element analysis program was used. The analyses of vertical settlement and lateral displacement for suction drain method and vertical drain method were conducted independently during the solving stage. The initial condition of drainage zone was fixed with 25m depth and 21m width. After the program analyses, the settlement condition had a different tendency with the ground improvement method. Especially, in the results of vertical drain method, the disparity of settlement between the middle of improved zone and unimproved zone. In the case of suction drain method, however, the difference of settlement was smaller than that of vertical drain method.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.77-87
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• 1993

PMOSFETs were studied on the effect of Hot-Carrier induced drain leakage current (Gate-Induced-Drain-Leakage). The result turned out that change in Vgl(drain voltage where 1pA/$\mu$m of drain leadage current flows) was largest in the Channel-Hot-Hole(CHH) injection condition and next was in dynamic stress and was smallest in electron trapping (Igmax) condition under various stress conditions. It was analyzed that if electron trapping occurrs in the overlap region of gate and drain(G/D), it reduces GIDL current due to increment of flat-band voltage(Vfb) and if CHH is injected, interface states(Nit) were generated and it increases GIDL current due to band-to-defect-tunneling(BTDT). Especially, under dynamic stress it was confirmed that increase in GIDL current will be high when electron injection was small and CHH injection was large. Therefore as applying to real circuit, low drain voltage GIDL(BTDT) was enhaced as large as CHH Region under various operating voltage, and it will affect the reliablity of the circuit.

• Proceedings of the Korean Geotechical Society Conference
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• 2006.03a
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• pp.1187-1194
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• 2006

This study analyzed characteristics of soft ground consolidation according to depths of vertical drain. As the result, when the depth ratio of vertical drains (L/D) were 0.5, 0.7, and 1.0, consolidation characteristics were similar up to 70% in consolidation degree under one-dimensional drain condition. However, above this degree, consolidation speed became slower as L/D became smaller. Two-dimensional drain condition also showed a similar tendency, but when L/D was 1.0, the consolidation speed was relatively higher.

• Proceedings of the Korea Society for Industrial Systems Conference
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• 1997.11a
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• pp.451-462
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• 1997

A 2-dimensional numerical analysis is presented for thermal-electron heat conduction effects upon the electron transport and the drain current-voltage characteristics of submicron GaAs MESFETs, based on the use of a nonstationary hydrodynamic transport model. It is shown that for submicron GaAs MESFETs, electron heat conduction effects are significant on their internal electronic properties and also drain current-voltage characteristics. Due to electron heat conduction effects, the electron energy is greatly one-djmensionalized over the entire device region. Also, the drain current decreases continuously with increasing thermal conductivity in the saturation region of large drain voltages above 1 V. However, the opposite trend is observed in the linear region of small drain voltages below 1 V. Accordingly, for a large thermal conductivity, negative differential resistance drain current characteristics are observed with a pronounced peak of current at the drain voltage of 1 V. On the contrary, for zero thermal conductivity, a Gunn oscillation characteristic is observed at drain voltages above 2 V under a zero gate bias condition.

• Geotechnical Engineering
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• v.1 no.2
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• pp.17-26
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• 1985

This study was carried out for the purpose of comparing in reference to sand drain in the next three different cases. First, The case of drain material (sand pile) has some rigidity during embankment and consolidation. Second, In usual case of no rigidity as a paper drain without permeability during embankment and consolidation Third, Check up clay behavior when above the two cases carried out respectively. This FEM analysis is consisted with Biot's consolidation equation when it is used for Christian Boehmer's numerical technique. The main results are obtained from above the Analysis When sand drain has some rigidity, the lateral and vertical deformation of clay foundation is restrained considerable amount and .exhibited bearing capacity of load as a pile According to the foundation in drained condition and untrained condition, the results are much variable in this analysis method. Also, The behaviors of stress path and pore water pressure met our expectation during , consolidation. This analysis should be considered to put into use of sand drain and design in future.

• Proceedings of the IEEK Conference
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• 2003.11c
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• pp.309-312
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• 2003

In this study, the electrical characteristic of Symmetric high voltage MOSFET (SHVMOSFET) for display driver IC were investigated. Measurement data are taken over range of temperature (300K-400K) and various extended drain length. In high temperature condition(>400K), drain current decreased over 20％, and specific on-resistance increased over 30％ in comparison with room temperature.

• Journal of the Korean Society of Industry Convergence
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• v.7 no.1
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• pp.83-89
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• 2004

The analysis about consolidation characteristic in soft clay has been depending one-dimension consolidation analysis. but, drain and undrain zone are explicated as homogeneous by consolidation behavior following consoli- dated settlementsoft in soft clay. 1) Established sand drain in soft clay in many types, and measured water content, unconfined compression strength, vertical stress, horizontal stress, vertical settlement, pore water pressure. 2) Arranged the result from the test and numerically explicated effective stress, total stress, and effective stress path at the drain and undrain zone. 3) We also analyzed and comparied elastic and elastic-plastic in soft clay using measured data. The result analyzed does not approach to a special theory, but, it is well in accord with the result of other investigator's study in the same condition.

• Journal of the Society of Disaster Information
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• v.13 no.4
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• pp.483-490
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• 2017

Recently, the demand for industrial and residental land are increasing with economic growth, but it is difficult to obtain the area for development with good ground condition. Various kinds of vertical drain technologies such as sand drain, sand compaction pile, packed drain, PVD are commercially available to improve the soft ground. Discharge capacity is the important factor of vertical drains. However, under field conditions, discharge capacity is changed with various reasons, such as soil condition, overburden pressure, and so on. In this paper, the experimental study was carried out to estimate the discharge capacity of four different types of PBD, PBD for double core PBD, deep type PBD, X type PBD, general type PBD. Characteristics of the discharge capacity for the surcharge load and hydraulic gradient were analysed. The double core PBD was excellent for discharge capacity in this study.

• Journal of information and communication convergence engineering
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• v.8 no.1
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• pp.107-111
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• 2010

This paper has presented the dependence of the threshold voltage on back gate bias and drain voltage for FinFET. The FinFET has three gates such as the front gate, side and back gate. Threshold voltage is defined as the front gate bias when drain current is 1 micro ampere as the onset of the turn-on condition. In this paper threshold voltage is investigated into the analytical potential model derived from three dimensional Poisson's equation with the variation of the back gate bias and drain voltage. The threshold voltage of a transistor is one of the key parameters in the design of CMOS circuits. The threshold voltage, which described the degree of short channel effects, has been extensively investigated. As known from the down scaling rules, the threshold voltage has been presented in the case that drain voltage is the 1.0V above, which is set as the maximum supply voltage, and the drain induced barrier lowing(DIBL), drain bias dependent threshold voltage, is obtained using this model.