• 설비공학논문집
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• 제21권2호
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• pp.94-102
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• 2009

Conceptual design of scroll expander and scroll compressor for 10kW-class Stirling engine utilizing solar energy as heat source has been carried out to estimate the applicability of scroll mechanism for Stirling cycle. CO2 was chosen as working fluid, since it has lower expansion index and higher density among probably usable gases. Gas temperature at the expander inlet was set at $700^{\circ}C$, and that at the compressor inlet was at $40^{\circ}C$. System efficiency reached maximum at the pressure ratio of about 2.5, and the peak efficiency increased with increasing high side pressure. Due to safety concern, the pressure condition of 6 MPa/2.5 MPa was chosen as design condition. Orbiting scroll members for the expander and compressor were designed to have double-sided structure in order to reduce the overall scroll size and to cancel out the axial gas forces acting on the orbiting scroll base plate. By parametric study on the scroll profile, smaller possible size for the scroll members was obtained. With the shaft speed of 3600rpm, the shaft output of the designed scroll expander was calculated to be 45.4kW, while input power for the scroll compressor was 34.5kW, yielding 10.9kW for the output power of the Stirling engine. System efficiency was estimated to be about 7.3%, and overall efficiencies of the scroll expander and compressor were around 84.1% and 88.3%, respectively.

• 반도체디스플레이기술학회지
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• 제11권3호
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• pp.33-37
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• 2012

Simple and high efficiency blue organic light-emitting diodes with three organic layers of N, N'-diphenyl-N,N'-bis-[4-(phenyl-m-tolylamino)-phenyl]-biphenyl-4,4'-diamine[DNTPD]/1,1-bis-(di-4-polya-minophenyl)cyclohexane[TAPC]/electron transport material [ET-137] were fabricated and their electroluminescent characteristics were evaluated according to the TAPC thickness variation in a range of $50{\sim}300{\AA}$. Electroluminescence spectra of the devices with structure of DNTPD/TAPC/ET-137 showed all the same central emission wavelengths of 455 nm under an applied voltage of 7V, which were similar with that of the device with ET-137 only. On the other hand, the electroluminescence spectra of the device with structure of DNTPD/ET-137 without TAPC layer showed double emission peaks at the wavelengths of 455 nm and 561 nm under an applied voltage of 7V. In the devices with structure of DNTPD/TAPC/ET-137, single peak blue emission was not maintained in the device with $50{\AA}$-thick TAPC above 8V by the formation of exciplex. In the device with $300{\AA}$-thick TAPC, however, single peak blue emission was maintained until 10 V. According to the thickness increase of TAPC in the fabricated devices, the current density and luminance decreased, but the luminous efficiency and roll-off characteristics were improved.

• 한국재료학회지
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• 제11권3호
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• pp.191-196
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• 2001

사파이어 (0001) 기판의 활성화 이온빔 (RIB) 처리 후 MOCVD에서 성장한 GaN박막의 열처리를 통한 구조 변화를 살펴보고, 전기적 성질의 변화를 관찰하기 위하여 전기로를 이용하여 열처리를 하였다. 시편의 분석을 위하여 DCXRD, Hall, TEM을 사용하였다. 100$0^{\circ}C$에서 시간을 변화시키면서 열처리한 시편에서 DCXRD의 FWHM는 약 50 arc-sec 정도 감소하였고, Hall 이동도는 약 80$\textrm{cm}^2$/V.sec 정도 향상되었다. 가장 좋은 Hall 이동도를 보인 처리된 시편과 처리 전 시편의 TEM 비교 관찰에서 전위 밀도는 56~69% 정도 감소하였고 격자의 변형도 줄어들었다. 이것은 결정의 질과 전기적 성질 사이의 상관관계를 암시하며, 기판의 RIB 처리와 성장 후 적절한 열처리의 조합이 MOCVD로 성장시킨 GaN 박막의 특성을 개선시키는 것을 명확하게 보여준다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.167-170
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• 2001

The stochiometric mix of evaporating materials for the CdGa$_2$Se$_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdGa$_2$Se$_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 630$^{\circ}C$ and 420$^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CdGa$_2$Se$_4$ single crystal thin films measured from Hall erect by van der Pauw method are 8.27x10$\^$17/ cm$\^$-3/, 345 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the Photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on CdGa$_2$Se$_4$ single crystal thin film, we observed free excition (E$\_$X/) existing only high quality crystal and neutral bound exiciton (D$\^$0/,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excision were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV,

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.163-166
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• 2001

The stochiometric mix of evaporating materials for the ZnGa$_2$Se$_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, ZnGa$_2$Se$_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 61$0^{\circ}C$ and 45$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnGa$_2$Se$_4$ single crystal thin films measured from Hall effect by van der Pauw method are 9.63x10$^{17}$ cm$^{-3}$ , 296 $\textrm{cm}^2$/V.s at 293 K, respectively, From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the ZnGa$_2$Se$_4$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal field splitting $\Delta$Cr were 251.9 MeV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on ZnGa$_2$Se$_4$ single crystal thin film, we observed free excition (E$_{x}$) existing only high quality crystal and neutral bound excition (A$^{0}$ ,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.on energy of impurity was 122 meV.

• 센서학회지
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• 제17권6호
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• pp.437-446
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• 2008

Single crystalline ${ZnIn_2}{Se_4}$ layers were grown on thoroughly etched semi-insulating GaAs (100) substrate at $400^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating ${ZnIn_2}{Se_4}$ source at $630^{\circ}C$. The crystalline structure of the single crystalline thick films was investigated by the photoluminescence (PL) and Double crystalline X-ray rocking curve (DCRC). The carrier density and mobility of ${ZnIn_2}{Se_4}$ single crystalline thick films measured from Hall effect by van der Pauw method are $9.41{\times}10^{16}cm^{-3}$ and $292cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ${ZnIn_2}{Se_4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=1.8622 eV-$(5.23{\times}10^{-4}eV/K)T^2$/(T+775.5 K). After the as-grown ${ZnIn_2}{Se_4}$ single crystalline thick films was annealed in Zn-, Se-, and In-atmospheres, the origin of point defects of ${ZnIn_2}{Se_4}$ single crystalline thick films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_{Se}$, $Zn_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted ${ZnIn_2}{Se_4}$ single crystalline thick films to an optical p-type. Also, we confirmed that In in ${ZnIn_2}{Se_4}$/GaAs did not form the native defects because In in ${ZnIn_2}{Se_4}$ single crystalline thick films existed in the form of stable bonds.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.719-720
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• 2007

Korea, for the first time in the world, constructed 765 kV double circuits transmission lines, which has 3 phases and 6 bundles with vertical arrangement using steel pipes in 1998. Also in 2002, we developed 765kV outdoor full GIS substation with self-developed technology. KEPCO accumulated a wealth of technologies for 765kV system construction and operation, and are listed 5th in technology field in the world. With this advanced technologies, we are developing oversea business. We started with a projects, 'Development Study on the Power System Network Analysis in Myanmar' in 2001, and continued the project to transmission design, consulting for transmission technology including the education of foreign trainees in south-east and middle east asia. Currently, 12 overseas businesses including 330kV transmission system consulting in Ghana, are in progress. In 2007, beginning with 750 kV transmission consulting in China, we are operating ATT(Advanced Transmission Technology) training program, which educate engineers of government and utilities company from China, Myanmar, Cambodia, Laos and Cambodia. However, for the successful development study on the power system, design of the power system and the training service, it is essential to standardize load design criteria in consideration of temperature, wind speed, air pressure and density, etc. of the other countries. Therefore, in this paper, standardized load design criteria for Cambodia, Laos, Myanmar is explained.

• 조명전기설비학회논문지
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• 제19권5호
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• pp.87-93
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• 2005

본 논문에서는 고농도$\cdot$고수율 오존발생기를 개발할 목적으로 망사형 내부전극과 무성방전의 중첩을 이용한 중첩방전형 오존발생기를 설계$\cdot$제작하였다. 중첩방전형 오존발생기는 방전공간에 3개의 전극(중심전극, 내부전극 및 외부전극)과 2개의 gap(중심전극과 내부전극 사이의 gap과 내부전극과 외부전극 사이의 gap)으로 구성되어있다. 중첩방전형 오존발생기의 중심전극을 공통접지하고 내부전극과 외부전극에 $180{[^\circ]}$의 위상차를 가진 역극성의 교류 고전압을 각각 인가하면 각각의 방전 gap에서 발생하는 무성방전이 중첩되면서 오존이 발생된다. 이때, 내부전극의 조밀도가 증가할수록 방전전극의 면적이 확대되고 방전공간의 전력밀도가 억제되어 오존생성특성이 상승하였다. 그 결과 최대 17,720[ppm], 5.4[g/h] 및 250[g/kwh]의 오존을 얻을 수 있었다.

• 전력전자학회논문지
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• 제12권3호
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• pp.267-275
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• 2007

본 논문은 현재 청정에너지의 개념으로 대두되고 있는 에너지원 가운데 기계적인 에너지로 저장하여 필요 시 꺼내어 사용할 수 있는 플라이휠 에너지 저장장치에 대한 에너지 입, 출력 모델링 및 PWM 인버터 시스템의 해석 및 제어에 관한 논문으로서, 플라이휠 저장장치 특성 및 시스템 모델링에 관해 논의한다. 재질에 따른 플라이휠의 특성과 플라이휠 에너지 저장장치의 속도 특성에 따른 전압과 전류의 변화량을 수식으로 간략화 하여 분석하고, 시뮬레이션을 통하여 플라이휠의 에너지 저장상태를 분석하였다. 또한, 부하측 전원의 이상유무에 관계없이 에너지를 공급할 수 있는 Online UPS로 사용하기 위해 PDFF 제어기법을 이용하여 전압제어 및 전류제어의 이중루프 제어로 구성된 단상 PW방식의 인버터 시스템 제작하였으며, 실험을 통하여 실제로 0.1[p.u], 1[p.u]에서의 제어되는 전압, 전류제어파형 및 THD 특성에 관하여 평가한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.179-180
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• 2007

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_2$ thin films measured with Hall effect by van der Pauw method are $4.05{\times}\;10^{16}/cm^3$, $139\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.9501\;eV\;-\;(8.79{\times}10^{-4}\;eV/K)T^2$/(T + 250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_2$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the phcitocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}So$ definitely exists in the $\Gamma_5$ states of the valence band of the $AgGaSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-, and $C_1$-exciton peaks for n = 1.