• Korean Journal of Materials Research
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• v.5 no.4
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• pp.445-450
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• 1995

AIN 완충층을 이용하여 대기압 유기금속에피텍셜 (MOVPE)법으로 사파이어 기판위에 성장시킨 AlGaN/GaN 이중 이종접합구조(double heterostructure : DH)의 고밀도 광여기에 의한 자외선 영역에서의 단면모드 유도방출 특성에 대하여 조사하였다. 실온에서 여기광 밀도 200kW/$cm^{2}$에서 방출된 AlGaN/GaN DH의 유도방출 피크파장과 반치폭은 각각 369nm와 22.4meV이었으며, 80K의 온도에서는 각각 360.1nm와 13.4meV이었다. 고밀도 광여기에 의하여 단면모드 자외영역 유도방출을 얻기에 필요한 입사광 밀도의 임계치는 실온과 80K의 온도에서 각각 89kW/$cm^{2}$와 44kW/$cm^{2}$이었다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.4
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• pp.72-75
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• 1985

1.3$\mu$m double-heterostructure GaInAsP/InP wafers have been grown by LPE and broad contact laser diodes have been fabricated. Electrical and optical characteristics of these lasers under pulsed lasing operation at room temperature are described. Typical threshold currents are below 2 Amp. corresponding to threshold current densities of 3 - 6 KAmp./$\textrm{cm}^2$ and peak lasing wavelength is shown to be at 1.315 $\mu$m.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.1
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• pp.6-10
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• 2009

In this paper, a selective area growth (SAG) of a GaN/AlGaN double heterostructure (DH) has been performed on r-plane sapphire substrate by using the mixed-source hydride vapor phase epitaxy (HVPE) with multi-sliding boat system. The SAG-GaN/AlGaN DH consists of GaN buffer layer, Te-doped AlGaN n-cladding layer, GaN active layer, Mg-doped AlGaN p-cladding layer, and Mg-doped GaN p-capping layer. The electroluminescence (EL) characteristics show an emission peak of wavelength, 439 nm with a full width at half maximum (FWHM) of approximately 0.64 eV at 20 mA. The I-V measurements show that the turn-on voltage of the SAG-GaN/AlGaN DH is 3.4 V at room temperature. We found that the mixed-source HVPE method with a multi-sliding boat system was one of promising growth methods for III-Nitride LEDs.

• Korean Journal of Materials Research
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• v.5 no.4
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• pp.420-425
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• 1995

AlGaN/GaInN 이중이종접합구조(double heterostructure :DH)를 대기압 유기금속기상에 피텍셜(MOVPE)법으로 AIN 와충층을 이용하여 사파이어 기판위에 성장하고, 실온에서의 광여기법에 의한 청색영역의 단면모드 유도방출특성과 편광특성을 조사하였다. 여기광원의 광밀도가 증가함에 따라 청색 영역에서의 유도방출 피크는 낮은 에너지 쪽으로 이동하였고, 유도방출 피크파장은 여기광밀도가 200kW/$cm^{2}$일때 402nm 이었으며, 스펙트럼의 반치폭은 18meV 이었다. 또한 유도방출에 필요한 여기광밀도의 임계치는 130 kW/$cm^{2}$ 이었다. AlGaN/GaInN로부터 방출되는 유도방출 광은 임계치 이상에서 TE-mode로 편광 되었다.

• Electrical & Electronic Materials
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• v.8 no.3
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• pp.272-277
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• 1995

We report the properties of optically pumped stimulated emission at room temperature (RT) from column-III nitride semiconductors of GaN, AlGaN/GaN double heterostructure (DH) and AlGaN/GaInN DH which prepared on a sapphire substrate using an AIN buffer-layer by the nietalorganic vapor phase epitaxy (MOVPE) method. The peak wavelength of the stimulated emission at RT from AIGaN/GaN DH is 369nm and the threshold of excitation pumping power density (P$\_$th/) is about 84kW/cm$\^$2/, and they from AlGaN/GaInN DH are 402nm and 130kW/cm$\^$2/ at the pumping power density of 200kW/cm$\^$2/, respectively. The P$\_$th/ of AIGaN/GaN and AlGaN/GaInN DHs are lower than the single layers of GaN and GaInN due to optical confinement within the active layers of GaN and GaInN, respectively.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.11
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• pp.17-28
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• 1995

In this paper, we developed a two-dimensional numerical simulator which could analyze the stripe geometry semiconductor laser diodes by modifying the commercial semiconductor device simulator, MEDICI. In order to study the characteristics of semiconductor laser diodes, it is necessary to solve the Helmholtz wave equation and photon rate equation in addition to the basic semiconductor equations. Also the recombination rates due to the spontaneous and the stimulated emissions should be included, which are very important recombination mechanisms in semiconductor laser diodes. Therefore, we included the solution routines which analyzed the Helmholtz wave equation and the photon rate equation and two important recombination rates to simulate the semiconductor laser diodes. Then we simulated the gain-guiding and index-guiding DH(Double Heterostructure) semiconductor laser diodes to verify the validity of the implemented functions. The results obtained from simulation are well consistent with the previously published ones. This allows us to know the operating characteristics of DH laser diodes and is expected to use as a tool for optimum design.

• Journal of Ceramic Processing Research
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• v.13 no.spc1
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• pp.128-131
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• 2012

The selective area growth light emitting diode on GaN substrate was grown using mixed-source HVPE method with multi-sliding boat system. The GaN substrate was grown using mixed-source HVPE system. Te-doped AlGaN/AlGaN/Mg-doped AlGaN/Mg-doped GaN multi-layers were grown on the GaN substrate. The appearance of epi-layers and the thickness of the DH was evaluated by SEM measurement. The DH metallization was performed by e-beam evaporator. n-type metal and p-type metal were evaporated Ti/Al and Ni/Au, respectively. At the I-V measurement, the turn-on voltage is 3 V and the differential resistance is 13 Ω. It was found that the SAG-LED grown on GaN substrate using mixed-source HVPE method with multi-sliding boat system could be applied for developing high quality LEDs.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.2
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• pp.61-65
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• 2009

In this paper, we report on the growth and optical characteristics of white-LED without fluorescent material. The growth of DH(double heterostructure) with AlGaN active layer was performed on a n-GaN/(0001) $Al_{2}O_{3}$ by the mixed-source HVPE and multi-sliding boat. The CRI(color rendering index) of packaging device charged in the range 72-93 with CIE chromaticity coordinates(x=$0.26{\sim}0.34$, y=$0.31{\sim}0.40$). And CCT(correlated color temperature) values was measured $5126{\sim}10406K$ with increasing injection current. The CIE point of conventional phosphor white LED shifts blue region, but cm point of non-phosphor white LED shifts opposite direction. These results show the mixed-source HVPE can be possible to newly fabricate method of phosphor free white LED with high CRI value.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.1
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• pp.11-14
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• 2012

The AlGaN layer has direct wide bandgaps ranging from 3.4 to 6.2 eV. Nowadays, it is becoming more important to fabricate optical devices in an UV region for the many applications. The high quality AlGaN layer is necessary to establish the UV optical devices. However, the growth of AlGaN layer on GaN layer is difficult due to the lattice mismatch and difference thermal expansion coefficient between GaN layer and AlGaN layer. In this paper, we attempted to grow the LED structure on GaN template by mixed-source HVPE method with multi-sliding boat system. We tried to find the optical and lattice transition of active layer by control the Al content in mixed-source. For the growth of epi layer, the HCl and $NH_3$ gas were flowed over the mixed-source and the carrier gas was $N_2$. The temperature of source zone and growth zone was stabled at 900 and $1090^{\circ}C$, respectively. After the growth, we performed the x-ray diffraction (XRD) and electro luminescence (EL) measurement.