• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.47-49
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• 1995

We report the spectroscopic properties of column-III nitrifies of GaN, GaInN, and AlGaN. The column-III nitride semiconductors are promising materials to realize the current-injection-type blue-and ultraviolet (UV)-light-emitting devices with high performance. To acheive the lasing with low threshold, the devices are must constructed to double heterostructure by succesive epitaxial growth technique, and we must confine the carriers in the potential barrier and optical confinement in wave guide between barrier and active layers has different refractive index. The refractive index of column-III nitride semiconductors, however, are rarely reported. The measured refractive index was 2.9, and the observed characteristic peak near the enrgy gap was analysed using a dielectric function and may due to excitonic contribution.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.2
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• pp.218-223
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• 2004

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by Micro-lapping process. The sapphire crystalline wafers were characterized by double crystal X-ray diffraction. The sample quality of crystalline sapphire wafer at surface has a full width at half maximum of 250 arcsec. This value at the surface sapphire wafer surfaces indicated 0.12${mu}m$ sizes. Surfaces of sapphire wafers were mechanically affected by residual stress and surface default. As a result, the value of surface roughness of sapphire wafers measured by AFM(Atom Force Microscope) was 2.1nm.

• Transactions on Electrical and Electronic Materials
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• v.14 no.6
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• pp.291-294
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• 2013

When subjected to a change in dimensions, the device performance decreases. Multi-gate SOI devices, viz. the Double Gate MOSFET (DG-MOSFET), are expected to make inroads into integrated circuit applications previously dominated exclusively by planar MOSFETs. The primary focus of attention is how channel engineering (i.e. Graded Channel (GC)) and gate engineering (i.e. Dual Insulator (DI)) as gate oxide) creates an effect on the device performance, specifically, leakage current ($I_{off}$), on current ($I_{on}$), and DIBL. This study examines the performance of the devices, by virtue of a simulation analysis, in conjunction with N-channel DG-MOSFETs. The important parameters for improvement in circuit speed and power consumption are discussed. From the analysis, DG-DI MOSFET is the most suitable candidate for high speed switching application, simultaneously providing better performance as an amplifier.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.465-468
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• 2008

New green light emitting phosphorescent devices with host structure of TCTA[4,4',4"-tris(N-carbazolyl)-triphenylamine]/$TCTA_{0.5}TPBi_{0.5}$/TPBI[1,3,5-tris(N-phenylbenzimiazole-2-yl)benzene] were proposed and investigated according to the thickness combination of host layers and the doping level of $Ir(ppy)_3$[tris(2-phenylpyridine) iridium(III)].

• Proceedings of the KIEE Conference
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• 2001.05a
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• pp.313-315
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• 2001

The power system automation, especially the substation automation is a major issue. so it has been widely studied each country in the world. Since the substation system includes lots of measuring devices. a lot of data and system information are transmitted to operators. The measured values usually have the error that results from the communication process, and it can degrade the reliability of estimated values. So. the detection and correction of measured values at a substation are important factors for substation automation. In this paper, we study the detection and col of measured values at the domestic 154kV/2 distribution substation of double bus structure study will be useful for expected economic dispatch measuring device's inspection and corr management by SCADA system operation, substation automation.

• Journal of the Korean Institute of Telematics and Electronics
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• v.17 no.6
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• pp.17-23
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• 1980

The transmission and reception characteristics of surface acoustic wave devices are analyzed by introducing three different types of transducers. such as single-electrode transducer. double-electrode transducer and triple-electrode transducer. Utilizing an electromagletic field theory technique, the output signal has been derived theoretically. The basic analysis used here can be extended for other configurations. The surface acoustic devices have been shown promising as a means of improving the operation efficiency by modifying the Beometric configuration of transducer strips.

• The Transactions of the Korean Institute of Power Electronics
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• v.9 no.4
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• pp.326-333
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• 2004

This research proposes a high frequency resonant inverter for high power conversion apparatus, which is consist of two L-C linked full-bridge inverter using MOSFET in order to distribute voltage and current of the devices. As an output power control strategy, the time sharing control method is applied. From the computer simulation results, the inverters and devices can be shared properly voltage and current rating of the system. And also, theoretical characteristics of the proposed circuit are compared with experimental results.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.2
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• pp.285-295
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• 1994

Double Injection(DI) switching devices consist of PS0+T and nS0+T contact separated by a nearly intrinsic semiconductor region containing deep trap. The equation set for DI switching device simulation by FEM is proposed. The existance of deep trap requires the modification of conventional equation set. So recombination rate equation is modified and a new equation is included in the equation set which conventionally consists op Poisson equation and current continuity equation. Consequently, the modeling equation set, which is proposed in this paper, can be applied to other semiconductor devices with trap.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.683-686
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• 2007

We have developed the transparent passivation layer for transparent organic light-emitting devices (TOLEDs) using CsCl layer. The CsCl passivation layer improves the optical transmittance of Ca/Ag double layer which have used as a semitransparent cathode, resulting in substantial increase of the luminance by the enhanced light extraction out of the cathode surface of the TOLEDs.

• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.16-19
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• 2000

Power transistors to be used in Power Integrated Circuits(PIC) are required to have low on resistance, fast switching speed, and high breakdown voltage. The lateral IGBTs(LIGBTs)are promising power devices for high voltage PIC applications, because of its superior device characteristics. In this paper, dual cathode LIGBT(DCIGBT) for high voltage is presented. We have verified the effectiveness of high blocking voltage in the new device by using two dimensional devices simulator. We have analyzed the forward blocking characteristics , the latch up performance and turn off characteristics of the proposed structure. Specially, we have focused forward blocking of LIGBT. The forward blocking voltage of conventional LIGBT and the proposed LIGBT are 120V and 165V, respectively. . The forward blocking characteristics of the proposed LIGBT is better than that of the conventional LIGBT. This forward blocking comparison exhibits a 1.5 times improvement in the proposed LIGBT.