• 제목/요약/키워드: Double Cathode

검색결과 64건 처리시간 0.026초

유기 EL 소자의 전기-광학적 특성 (Electro-optical properties of organic EL device)

  • 김민수;박이순;박세광
    • 센서학회지
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    • 제6권4호
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    • pp.252-257
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    • 1997
  • ITO(indium-tin-oxide)/PPV(poly(p-phenylenevihylene))/음극 전극의 단층구조와 ITO /PVK(poly(N-vinylcarbazole))/PPV/음극전극의 이층구조를 가진 유기 EL(electroluminescence) 소자를 제작하였으며, 전기-광학적 특성을 측정하였다. 실험 결과, 단층구조에서는 PPV막의 열변환 온도를 $140^{\circ}C$에서 $260^{\circ}C$로 증가할수록 최대 휘도가 $118.8\;cd/m^{2}$(20V)에서 $21.14\;cd/m^{2}$(28V)으로 감소하였고, EL 스펙트럼의 최대 피크가 500nm에서 580nm로 이동하였다. 또한, 음극전극의 일함수가 낮을수록 소자의 발광휘도와 주입 전류는 증가되었다. 이층구조에서는 PVK막의 농도가 감소함에 따라 발광휘도가 $70.71\;cd/m^{2}$(32V)에서 $152.7\;cd/m^{2}$(26V)으로 증가하였다.

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High Luminous Efficacy and Low Driving Voltage PDP with SrO-MgO Double Protective Layer

  • Whang, Ki-Woong;Jung, Hae-Yoon;Lee, Tae-Ho;Cheong, Hee-Woon
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.173-176
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    • 2009
  • We suggest a new protective layer for PDP consists of SrO and MgO double layer. This double layer structure protects SrO layer from the contamination by $H_2O$ or $CO_2$ in the air and enable SrO to play as the main cathode material. It was confirmed that the high secondary electron emission characteristics of SrO by Xe ion can bring considerable driving voltage reduction and improvement of luminance and luminous efficacy in PDP.

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Spatio-temporal Charge Distribution in Electric Double Layer Capacitors observed by pulsed Electro Acoustic Method

  • Sung, Youl-Moon
    • Transactions on Electrical and Electronic Materials
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    • 제8권4호
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    • pp.182-187
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    • 2007
  • The use of the pulsed electro acoustic (PEA) method allowed us to perform the direct observations of spatio-temporal charge distributions in Electric double layer capacitors (EDLCs) based on polarizable nanoporous carbonaceous electrode. The negative charge density became the maximum, about $205C/m^3$ at the region where was near to collector layer in EDLCs for case $V_{DC}=2.5V$, while the positively charged density became the maximum, about $61.1C/m^3$ at the region where it was located around the cathode layer. The performance of the best sample was found to be better in terms of the charge density (Cs) and specific energy ($E_s$) with a maximum value of ${\sim}8.4F/g$ and 26 Wh/kg. The $C_s$ obtained from the PEA method agreed well with that from the energy conversion method. The PEA measurement used here is a very useful method to quantitively investigates the spatio-temporal charge distribution in EDLCs.

Electrochemical Frequency Modulation: Solution Resistance and Double Layer Capacitance Considerations

  • Lalvani, Shashi;Ullah, Sifat;Kerr, Lei
    • Corrosion Science and Technology
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    • 제20권5호
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    • pp.231-241
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    • 2021
  • The objective of this study was to evaluate total current under steady-state conditions for a material undergoing corrosion using the electrochemical frequency modulation (EFM) technique, taking into account the presence of solution resistance and double layer capacitance. The analysis involving linearization of the Tafel curve allowed for the estimation of corrosion parameters. Results showed that the output signal was dependent on fundamental frequencies and their multiples. In addition, the output signal almost manifested itself at frequencies that were sums of fundamental frequencies of the applied sinusoidal signal. The harmonics calculated showed a significant shift from the principal frequency of input signals. The investigation involved the influence of corrosion current and anode-to-cathode Tafel slope ratio on faradaic and non-faradaic currents (including the average and RMS). The model presented showed both qualitative and quantitative improvements over the previously developed EFM technique that ignored the influence of solution resistance and the double layer capacitance while assuming the applied DC potential corresponded to the corrosion potential of the corroding material.

(Ba0.5Sr0.5)0.99Co0.2Fe0.8O3-δ(BSCF)의 합성 및 BSCF/GDC(Buffer)/ScSZ의 전기화학적 특성 (Synthesis of (Ba0.5Sr0.5)0.99Co0.2Fe0.8O3-δ (BSCF) and the Electrochemical Performance of the BSCF/GDC(Buffer)/ScSZ)

  • 임용호;황해진;문지웅;박선민;최병현;이미재
    • 한국세라믹학회지
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    • 제43권6호
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    • pp.369-375
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    • 2006
  • [ $(Ba_{0.5}Sr_{0.5})_{0.99}Co_{x}Fe_{1-x}O_{3-{\delta}}$ ] [x=0.8, 0.2](BSCF) powders were synthesized by a Glycine-Nitrate Process (GNP) and the electrochemical performance of the BSCF cathode on a scandia stabilized zirconia, $[(Sc_{2}O_3)_{0.11}(ZrO_2)_{0.89}]-1Al_{2}O_3$ was investigated. In order to prevent unfavorable solid-state reactions between the cathode and zirconia electrolyte, a GDC ($Gd_{0.1}Ce_{0.9}O_{2-{delta}}$) buffer layer was applied on ScSZ. The BSCF (x = 0.8) cathode formed on GDC(Buffer)/ScSZ(Disk) showed poor electrochemical property, because the BSCF cathode layer peeled off after the heat-treatment. On the other hand, there were no delamination or peel off between the BSCF and GDC buffer layer, and the BSCF (x = 0.2) cathode exhibited fairly good electrochemical performances. It was considered that the observed phenomenon was associated with the thermal expansion mismatch between the cathode and buffer layer. The ohmic resistance of the double layer cathode was slightly lower than that of the single layer BSCF cathode due to the incorporation of platinum particle into the BSCF second layer.

An Analytical Model for the Threshold Voltage of Short-Channel Double-Material-Gate (DMG) MOSFETs with a Strained-Silicon (s-Si) Channel on Silicon-Germanium (SiGe) Substrates

  • Bhushan, Shiv;Sarangi, Santunu;Gopi, Krishna Saramekala;Santra, Abirmoya;Dubey, Sarvesh;Tiwari, Pramod Kumar
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제13권4호
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    • pp.367-380
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    • 2013
  • In this paper, an analytical threshold voltage model is developed for a short-channel double-material-gate (DMG) strained-silicon (s-Si) on silicon-germanium ($Si_{1-X}Ge_X$) MOSFET structure. The proposed threshold voltage model is based on the so called virtual-cathode potential formulation. The virtual-cathode potential is taken as minimum channel potential along the transverse direction of the channel and is derived from two-dimensional (2D) potential distribution of channel region. The 2D channel potential is formulated by solving the 2D Poisson's equation with suitable boundary conditions in both the strained-Si layer and relaxed $Si_{1-X}Ge_X$ layer. The effects of a number of device parameters like the Ge mole fraction, Si film thickness and gate-length ratio have been considered on threshold voltage. Further, the drain induced barrier lowering (DIBL) has also been analyzed for gate-length ratio and amount of strain variations. The validity of the present 2D analytical model is verified with ATLAS$^{TM}$, a 2D device simulator from Silvaco Inc.

Structural Design of a Cathode-ray Tube (CRT) to Improve its Mechanical Shockproof Character

  • Park, Sang-Hu;Kim, Won-Jin
    • Journal of Mechanical Science and Technology
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    • 제20권9호
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    • pp.1361-1370
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    • 2006
  • An electronic beam mis-landing phenomenon on the RGB (red/green/blue) -fluorescent surface has been considered as one of serious problems to be solved in cathode-ray tube (CRT), which is generally caused by mechanical shock and vibration. In this work, structural design concepts on the major parts of the CRT, such as a frame, a shadow mask, and a spring, are studied to improve the mechanical shockproof character of a CRT by FEM-analyses and experimental approaches ; a frame is newly designed to have strength employing the double-corner-beads which reduces considerably the distortion of the frame and the shadow mask : the edge-bead of a shadow-mask is redesigned to maintain the wide curved surface of a shadow-mask after mechanical shock : finally, a spring supporting the frame and the shadow-mask is designed to have enough flexibility along drop-direction. As an example, a conventional type of a 15inch CRT was utilized to demonstrate the feasibility and usefulness of this work. Overall, some favorable information on the structural design of the CRT is achieved, and the mechanical shockproof character of a 15-inch CRT is improved in the degree of 3G $(1G=9.81m/s^2)$ as an average-value.

투명 금속 음극을 이용한 전면발광 적색 인광 OLEDs의 전기 및 광학적 특성 (Electrical and Optical Properties of Red Phosphorescent Top Emission OLEDs with Transparent Metal Cathodes)

  • 김소연;하미영;문대규;이찬재;한정인
    • 한국전기전자재료학회논문지
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    • 제20권9호
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    • pp.802-807
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    • 2007
  • We have developed red phosphorescent top emission organic light-emitting diodes with transparent metal cathodes deposited by using thermal evaporation technique. Phosphorescent guest molecule, BtpIr(acac), was doped in host CBP for the red phosphorescent emission, Ca/Ag, Ba/Ag, and Mg/Ag double layers were used as cathode materials of top emission devices, which were composed of glass/Ni/2TNATA(15 nm)/${\alpha}$-NPD(35 nm)/CBP:BtpIr(acac)(40 nm, 10%)/BCP(5 nm)/$Alq_3$(5 nm)/cathodes. The optical transparencies of these metal cathodes strongly depend on underlying Ca, Ba, and Mg layers. These layers also strongly affect the electrical conduction and emission properties of the red phosphorescent top emission devices.

A dense local block CNT-FEL BLU with common gate structure

  • Jeong, Jin-Woo;Kim, Dong-Il;Kang, Jun-Tae;Kim, Jae-Woo;Song, Yoon-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.148-150
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    • 2009
  • We have developed 15 inch, 130 blocks local dimming FEL using printed CNT emitters, in which multiple FE blocks were built with a common gate electrode. Cathode electrode formed by the double-metal technique, in which an insulator is interposed between the addressing bus and cathode electrode.

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Transparent organic light-emitting devices with CsCl passivation layer

  • Kim, So-Youn;Lee, Chan-Jae;Ha, Mi-Young;Moon, Dae-gyu;Han, Jeong-In
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.683-686
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    • 2007
  • We have developed the transparent passivation layer for transparent organic light-emitting devices (TOLEDs) using CsCl layer. The CsCl passivation layer improves the optical transmittance of Ca/Ag double layer which have used as a semitransparent cathode, resulting in substantial increase of the luminance by the enhanced light extraction out of the cathode surface of the TOLEDs.

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